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    • 1. 发明授权
    • Process of manufacturing a semiconductor device by filling a via hole in
an interlayered film of the device with wiring metal
    • 通过用布线金属填充器件的层间膜中的通孔来制造半导体器件的工艺
    • US5543357A
    • 1996-08-06
    • US351679
    • 1994-12-08
    • Yoshiaki YamadaNobukazu ItoKuniko MiyakawaMichiko Yamanaka
    • Yoshiaki YamadaNobukazu ItoKuniko MiyakawaMichiko Yamanaka
    • H01L21/28H01L21/3205H01L21/768H01L23/52
    • H01L21/76882Y10S438/913
    • The present invention discloses a process for manufacturing a semiconductor device in which characteristics of an aluminum alloy film are prevented from deteriorating, when a titanium film is used as an under film and the aluminum alloy film is heated to fill a via hole therewith. Interlayered insulating film is formed on a first aluminum wire, and after the formation of a via hole which reaches the first aluminum wire, a titanium film and an aluminum alloy film are formed in turn by a sputtering process. Next, a silicon substrate is heated up to 450.degree. to 500.degree. C. to melt the aluminum alloy film, thereby filling the via hole therewith. In this case, the thickness of the titanium film is set to 10% or less of the thickness of the aluminum alloy film and at most 25 nm. In particular, in the case of the aluminum alloy film containing no silicon, the thickness of the titanium film is set to 5% or less of the thickness of the aluminum alloy film, whereby the deterioration of characteristics of the aluminum alloy film by titanium can be minimized, and the via hole can be surely filled therewith.
    • 本发明公开了一种用于制造半导体器件的方法,其中当将钛膜用作底膜并且铝合金膜被加热以填充通孔时,防止铝合金膜的特性劣化。 在第一铝线上形成层间绝缘膜,在形成到达第一铝线的通孔后,通过溅射工艺依次形成钛膜和铝合金膜。 接着,将硅衬底加热至450℃至500℃以熔化铝合金膜,由此填充通孔。 在这种情况下,将钛膜的厚度设定为铝合金膜的厚度的10%以下,至多25nm。 特别地,在不含硅的铝合金膜的情况下,钛膜的厚度设定为铝合金膜的厚度的5%以下,由此钛合金膜的特性劣化 可以将通孔确定地填满。
    • 6. 发明申请
    • PATTERN FORMING METHOD AND APPARATUS
    • 图案形成方法和装置
    • US20080038671A1
    • 2008-02-14
    • US11782233
    • 2007-07-24
    • Taro YAMAMOTOHitoshi KosugiYoshiaki YamadaYasuhito Saiga
    • Taro YAMAMOTOHitoshi KosugiYoshiaki YamadaYasuhito Saiga
    • G03B27/42G03C5/00
    • G03F7/38G03F7/2041G03F7/70341
    • A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.
    • 图案形成方法包括在基板的表面上依次形成抗蚀剂膜或依次形成抗蚀剂膜和保护膜; 然后,在曝光期间进行浸渍曝光,其中包括将抗蚀剂膜或抗蚀剂膜和形成在基板上的保护膜浸入液体中,从而在抗蚀剂膜上形成预定的曝光图案; 并通过使用显影液进行曝光图案的显影处理,由此形成预定的抗蚀剂图案。 在浸没曝光之后和显影处理之前,该方法还包括进行将抗蚀剂膜或用作基板表面的保护膜的表面转动成亲水性的亲水处理,以允许基板表面被 开发液体整体。