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81. 发明申请

US20070228388A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070228388A1
公开(公告)日：2007-10-04
申请号：US11651023
申请日：2007-01-09
申请人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
发明人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

82. 发明授权

US07067401B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
公开(公告)号：US07067401B2
公开(公告)日：2006-06-27
申请号：US11235278
申请日：2005-09-27
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

83. 发明授权

US06818531B1 Method for manufacturing vertical GaN light emitting diodes 有权
标题翻译：制造垂直GaN发光二极管的方法
公开(公告)号：US06818531B1
公开(公告)日：2004-11-16
申请号：US10611898
申请日：2003-07-03
申请人： Seung Jin Yoo , In Eung Kim , Hun Joo Hahm , Young Ho Park , Jeong Seok Na
发明人： Seung Jin Yoo , In Eung Kim , Hun Joo Hahm , Young Ho Park , Jeong Seok Na
IPC分类号： H01L2130
CPC分类号： H01L33/0079 , Y10S438/977
摘要： A method for manufacturing vertical GaN light emitting diodes starts by forming a light emitting structure on a sapphire substrate, said light emitting structure including a first conductive GaN clad layer, an active layer and a second conductive GaN clad layer. The light emitting structure is divided into plural units so that the first conductive GaN clad layer of a thickness of at least approximately 100 Å remains. A conductive substrate is attached to the divided upper surface of the light emitting structures using a conductive adhesive layer. A lower surface of the sapphire substrate is irradiated by laser beam so that the sapphire substrate is removed from the unit light emitting structures. First and second contacts are formed respectively on the surfaces of the first conductive clad layer and the conductive substrate. Finally, the resulting structure is cut into plural unit light emitting diodes.
摘要翻译：通过在蓝宝石衬底上形成发光结构，开始制造垂直GaN发光二极管的方法，所述发光结构包括第一导电GaN覆层，有源层和第二导电GaN覆层。发光结构被分成多个单元，从而保留至少约100埃的厚度的第一导电GaN覆层。使用导电性粘合剂层将导电性基板附着到发光结构的分割的上表面。由激光束照射蓝宝石衬底的下表面，从而将蓝宝石衬底从单位发光结构中去除。分别在第一导电覆盖层和导电基板的表面上形成第一和第二触点。最后，将所得到的结构切成多个单位发光二极管。

84. 发明授权

US07160744B2 Fabrication method of light emitting diode incorporating substrate surface treatment by laser and light emitting diode fabricated thereby 有权
标题翻译：掺合了由其制造的激光和发光二极管的基板表面处理的发光二极管的制造方法
公开(公告)号：US07160744B2
公开(公告)日：2007-01-09
申请号：US10953815
申请日：2004-09-30
申请人： Young Ho Park , Hun Joo Hahm , Kun Yoo Ko , Hyo Kyong Cho
发明人： Young Ho Park , Hun Joo Hahm , Kun Yoo Ko , Hyo Kyong Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/02378 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , Y10S438/964
摘要： The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.
摘要翻译：本发明涉及一种LED的制造方法，其包括通过激光对基板进行表面处理的步骤以及通过这种制造方法制造的LED。与现有技术相比，本发明可以使用激光器来实现对LED基板的更精细的表面处理。结果，本发明可以提高LED的光提取效率，同时保护衬底免受现有技术的慢性问题，例如由化学蚀刻和/或物理抛光引起的应力或缺陷。

85. 发明授权

US07015512B2 High power flip chip LED 失效
标题翻译：大功率倒装芯片LED
公开(公告)号：US07015512B2
公开(公告)日：2006-03-21
申请号：US10852437
申请日：2004-05-25
申请人： Young Ho Park , Hun Joo Hahm , Seung Jin Yoo
发明人： Young Ho Park , Hun Joo Hahm , Seung Jin Yoo
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/08
摘要： A high power flip chip LED has an n-doped semiconductor layer formed on the sapphire substrate, with a plurality of first regions and a second region of intersecting lines for separating the first regions from each other. P-doped semiconductor layers are on the first regions of the n-doped semiconductor layer to form mesa structures. At least one pair of diagonal corners of the respective mesa structures are rounded inward to form first basins between adjacent inward-rounded corners. First metal layers are on the mesa structures in a same configuration. A second metal layer is on the second region of the n-doped semiconductor layer. First ohmic contacts are on the first metal layers. Second ohmic contacts are on the second metal layer in the first basins. The LED can prevent the current channeling to increase the luminous area while equalizing the current density area thereby generating high brightness light.
摘要翻译：高功率倒装芯片LED具有形成在蓝宝石衬底上的n掺杂半导体层，具有多个第一区域和用于将第一区域彼此分离的相交线的第二区域。 P掺杂半导体层在n掺杂半导体层的第一区上，以形成台面结构。相应台面结构的至少一对对角线向内倒圆，以在相邻的内圆角之间形成第一盆。第一金属层在相同构型的台面结构上。第二金属层位于n掺杂半导体层的第二区上。第一个欧姆接触位于第一个金属层上。第二个欧姆接触位于第一个盆地的第二个金属层上。 LED可以防止电流通道增加发光面积，同时均衡电流密度区域，从而产生高亮度光。

86. 发明授权

US06914262B2 White light emitting diode and method for manufacturing the same 失效
公开(公告)号：US06914262B2
公开(公告)日：2005-07-05
申请号：US10689630
申请日：2003-10-22
申请人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
发明人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
IPC分类号： H01L25/075 , H01L27/15 , H01L31/12 , H01L33/08 , H01L33/32 , H01L33/44 , H01L33/62
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , Y10S257/918 , H01L2924/00014
摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.

87. 发明授权

US07458703B2 Light emitting diode package having dual lens structure for lateral light emission 有权
标题翻译：具有用于横向发光的双透镜结构的发光二极管封装
公开(公告)号：US07458703B2
公开(公告)日：2008-12-02
申请号：US11488067
申请日：2006-07-18
申请人： Kyung Taeg Han , Myoung Soo Choi , Seon Goo Lee , Seong Yeon Han , Hun Joo Hahm , Chang Ho Song
发明人： Kyung Taeg Han , Myoung Soo Choi , Seon Goo Lee , Seong Yeon Han , Hun Joo Hahm , Chang Ho Song
IPC分类号： F21V7/00
CPC分类号： H01L33/58 , G02B19/0028 , G02B19/0061 , G02B19/0071 , H01L33/60 , H01L33/62 , H01L33/644 , H01L33/647 , H01L2224/48247 , H01L2924/3025 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： An LED package having a dual structure for lateral emission of light includes an LED chip, a lower structure, a lower lens and an upper lens. The lower structure includes a pair of electric connection parts, a package body, and a transparent encapsulant filled in the recess of the package body to seal the LED chip. The upper-hemispheric lower lens is fixed to an upper part of the lower structure with a bottom part thereof attached to an upper surface of the transparent encapsulant. The funnel-shaped upper lens is fixed to an upper end of the lower lens, and includes an axially symmetrical reflecting surface for laterally reflecting light from the lower lens, and an emitting surface for laterally emitting light reflected from the reflecting surface. The upper lens and the lower lens are separately molded and combined together to easily manufacture and efficiently install the LED package.
摘要翻译：具有用于光的横向发射的双重结构的LED封装包括LED芯片，下部结构，下部透镜和上部透镜。下部结构包括一对电连接部分，封装主体和填充在封装体的凹部中的透明密封剂，以密封LED芯片。上半球下透镜固定到下结构的上部，其下部附接到透明密封剂的上表面。漏斗状上透镜固定在下透镜的上端，并且包括用于横向反射来自下透镜的光的轴对称反射表面和用于横向发射从反射表面反射的光的发射表面。上透镜和下透镜分别模制并组合在一起以容易地制造和有效地安装LED封装。

88. 发明授权

US07091055B2 White light emitting diode and method for manufacturing the same 有权
标题翻译：白光发光二极管及其制造方法
公开(公告)号：US07091055B2
公开(公告)日：2006-08-15
申请号：US11087680
申请日：2005-03-24
申请人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
发明人： Hun Joo Hahm , In Eung Kim , Jeong Seok Na , Seung Jin Yoo , Young Ho Park , Soo Min Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/15 , H01L25/0753 , H01L27/153 , H01L33/44 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , Y10S257/918 , H01L2924/00014
摘要： Disclosed are a white light emitting diode and a method for manufacturing the white light emitting diode. The white light emitting diode comprises a conductive substrate with a light transmitting property having a surface divided into first and second areas; a first emitting unit including a first clad layer, a first active area, and a second clad layer at the first area of the conductive substrate; a second emitting unit including a third clad layer, a second active area emitting light with a wavelength to be combined with light emitted from the first active area into white light, and a fourth clad layer at the second area of the conductive substrate; and first, second and third electrodes, the first electrode connected to the second surface of the conductive substrate, the second electrode connected to the second clad layer, and the third electrode connected to the fourth clad layer.
摘要翻译：公开了一种白色发光二极管及其制造方法。白色发光二极管包括具有透光性的导电性基板，其表面被划分为第一和第二区域; 第一发光单元，其包括在导电基板的第一区域处的第一覆盖层，第一有源区和第二覆盖层; 第二发光单元，包括第三覆盖层，将具有与从第一有源区域发射的光合成的波长的光发射到白光的第二有源区，以及在导电基板的第二区域处的第四覆盖层; 以及第一，第二和第三电极，连接到导电衬底的第二表面的第一电极，连接到第二覆盖层的第二电极和连接到第四覆盖层的第三电极。

89. 发明授权

US06703687B2 Bipolar transistor and method for manufacturing the same 失效
标题翻译：双极晶体管及其制造方法
公开(公告)号：US06703687B2
公开(公告)日：2004-03-09
申请号：US10141113
申请日：2002-05-09
申请人： Hun Joo Hahm
发明人： Hun Joo Hahm
IPC分类号： H01L27082
CPC分类号： H01L29/735 , H01L29/732
摘要： A bipolar transistor and a method for manufacturing the bipolar transistor are provided. The bipolar transistor includes a collector region including a semiconductor substrate doped with a first conductive dopant, an intrinsic base region low-density doped with a second conductive dopant on the semiconductor substrate, the second conductive dopant being contrary to the first conductive dopant, an extrinsic base region high-density doped with the second conductive dopant on a first portion of the upper surface of the intrinsic base region and formed in a single well with at least two branched lower terminals, an emitter region doped with the first conductive dopant on a second portion of the upper surface of the intrinsic base region, the second portion spaced from the first portion by a designated interval, a collector electrode formed on the lower surface of the semiconductor substrate, an emitter electrode formed on the upper surface of the emitter region, and a base electrode formed on the upper surface of the extrinsic base region.
摘要翻译：提供了双极晶体管和制造双极晶体管的方法。所述双极晶体管包括集电极区域，所述集电极区域包括掺杂有第一导电掺杂剂的半导体衬底，在所述半导体衬底上掺杂有第二导电掺杂剂的低密度本征基极区域，所述第二导电掺杂物与所述第一导电掺杂剂相反，在所述本征基极区的上表面的第一部分上掺杂有所述第二导电掺杂剂的基底区域，并且形成在具有至少两个分支的下部末端的单个阱中，在第二导电掺杂剂上掺杂有所述第一导电掺杂剂的发射极区域本征基区的上表面的一部分，第二部分与第一部分隔开指定的间隔，形成在半导体衬底的下表面上的集电极，形成在发射极区的上表面上的发射电极，以及形成在外部基极区域的上表面上的基极。

90. 发明授权

US08105854B2 LED package 有权
标题翻译： LED封装
公开(公告)号：US08105854B2
公开(公告)日：2012-01-31
申请号：US12612334
申请日：2009-11-04
申请人： Seon Goo Lee , Hun Joo Hahm , Dae Yeon Kim
发明人： Seon Goo Lee , Hun Joo Hahm , Dae Yeon Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/62 , F21K9/00 , H01L33/60 , H01L2224/48091 , H01L2224/48227 , H01L2924/01078 , H01L2924/01079 , H05K1/021 , H05K3/244 , H05K2201/09827 , H05K2201/09981 , H05K2201/10106 , H05K2201/2054 , H01L2924/00014
摘要： A Chip on Board (COB) package which can reduce the manufacturing costs by using a general PCB as a substrate, increase a heat radiation effect from a light source, thereby realizing a high quality light source at low costs, and a manufacturing method thereof. The COB package includes a board-like substrate with a circuit printed on a surface thereof, the substrate having a through hole. The package also includes a light source positioned in the through hole and including a submount and a dome structure made of resin, covering and fixing the light source to the substrate. The invention allows a good heat radiation effect by using the general PCB as the substrate, enabling manufacture of a high quality COB package at low costs. This in turn improves emission efficiency of the light source, ultimately realizing a high quality light source.
摘要翻译：通过使用通用PCB作为基板可以降低制造成本的芯片上（COB）封装，增加了来自光源的散热效果，从而以低成本实现高质量的光源及其制造方法。 COB封装包括具有印刷在其表面上的电路的板状衬底，该衬底具有通孔。封装还包括位于通孔中的光源，并且包括底座和由树脂制成的圆顶结构，将光源覆盖并固定到基板。本发明通过使用通用PCB作为基板来实现良好的散热效果，能够以低成本制造高质量的COB封装。这又提高了光源的发光效率，最终实现了高质量的光源。

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