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1. 发明申请

US20070228388A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070228388A1
公开(公告)日：2007-10-04
申请号：US11651023
申请日：2007-01-09
申请人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
发明人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

2. 发明授权

US07531841B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US07531841B2
公开(公告)日：2009-05-12
申请号：US11651023
申请日：2007-01-09
申请人： Kun Yoo Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
发明人： Kun Yoo Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

3. 发明授权

US08110847B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08110847B2
公开(公告)日：2012-02-07
申请号：US12003276
申请日：2007-12-21
申请人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
发明人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
摘要翻译：提供一种包含基板的氮化物系半导体LED，形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

4. 发明申请

US20080210972A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20080210972A1
公开(公告)日：2008-09-04
申请号：US12003276
申请日：2007-12-21
申请人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyng Jin Park , Seok Min Hwang , Seung Wan Chae
发明人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyng Jin Park , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
摘要翻译：提供一种包含基板的氮化物系半导体LED，形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

5. 发明授权

US07872276B2 Vertical gallium nitride-based light emitting diode and method of manufacturing the same 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US07872276B2
公开(公告)日：2011-01-18
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
发明人： Su Yeol Lee , Bang Won Oh , Doo Go Baik , Tae Sung Jang , Jong Gun Woo , Seok Beom Choi , Sang Ho Yoon , Dong Woo Kim , In Tae Yeo
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

6. 发明授权

US09749666B2 Display apparatus 有权
公开(公告)号：US09749666B2
公开(公告)日：2017-08-29
申请号：US13204765
申请日：2011-08-08
申请人： Dong Woo Kim
发明人： Dong Woo Kim
IPC分类号： H04N21/235 , H04N21/236 , H04N21/2362 , H04N21/2365 , H04N21/2385 , H04N21/43 , H04N21/435 , H04N21/434 , H04N5/38 , H04N5/40 , H04N5/44 , H04N21/41 , H04N21/426
CPC分类号： H04N21/236 , H04N5/38 , H04N5/40 , H04N5/44 , H04N21/235 , H04N21/23614 , H04N21/2362 , H04N21/2365 , H04N21/2385 , H04N21/4122 , H04N21/42607 , H04N21/4263 , H04N21/43 , H04N21/4348
摘要： A display apparatus is provided, which includes a display panel, and a display driving apparatus mounted on the display panel and driving the display panel, which includes an RF modem having a first tuner for providing a broadcasting signal to the display panel.

7. 发明申请

US20130273466A1 TONER HAVING EXCELLENT ENVIRONMENTAL RESISTANCE, FLUDITY, AND CHARGEABILITY 审中-公开
标题翻译：具有良好的环境抵抗力，流动性和充电性
公开(公告)号：US20130273466A1
公开(公告)日：2013-10-17
申请号：US13996857
申请日：2011-12-21
申请人： Dae Woong Choi , Jae Bum Park , Dong Woo Kim , Young Jae Kwon
发明人： Dae Woong Choi , Jae Bum Park , Dong Woo Kim , Young Jae Kwon
IPC分类号： G03G9/00 , G03G15/08
CPC分类号： G03G9/0827 , G03G9/0819
摘要： Provided is a toner particle having excellent environmental resistance, fluidity, and chargeability for developing an electrostatic image. The toner particle comprises a coupling resin, a release agent, and a coloring agent, and satisfies Formula (1) below: 8.5≦SMF≦10.5 (1), wherein the surface morphology factor (SMF) of the formula can be represented by following Formula (2): SMF=−log(4/3×π×D3×RD×B×C) [m2/ea] (2).
摘要翻译：提供了一种具有优异的耐环境性，流动性和用于显影静电图像的带电性的调色剂颗粒。调色剂颗粒包括偶联树脂，脱模剂和着色剂，并且满足下式（1）：8.5 @ SMF @ 10.5（1），其中式的表面形态因子（SMF）可以由下式表示：公式（2）：SMF = -log（4/3×pi×D3×RD×B×C）[m2 / ea]（2）。

8. 发明申请

US20120136218A1 REMOTE HEALTHCARE SYSTEM AND HEALTHCARE METHOD USING THE SAME 审中-公开
标题翻译：远程医疗保健系统和使用它的医疗保健方法
公开(公告)号：US20120136218A1
公开(公告)日：2012-05-31
申请号：US13301439
申请日：2011-11-21
申请人： Sung Hwa Lee , Dong Woo Kim , Se Un Kim , Ji Eun Park , Ji Na Yoon
发明人： Sung Hwa Lee , Dong Woo Kim , Se Un Kim , Ji Eun Park , Ji Na Yoon
IPC分类号： A61B5/00
CPC分类号： G06F19/3418 , G16H15/00 , G16H50/20
摘要： A remote healthcare system and healthcare method using the same are provided. A healthcare method includes accessing a healthcare system, acquiring vital information of a user who accesses the healthcare system, and displaying a progress state of a healthcare service and a health of the user as an image based on the vital information.
摘要翻译：提供远程医疗保健系统和使用其的保健方法。医疗保健方法包括访问医疗保健系统，获取访问医疗保健系统的用户的重要信息，以及基于重要信息显示医疗保健服务的进展状态和用户的健康作为图像。

9. 发明授权

US07791100B2 Vertical gallium nitride based light emitting diode with multiple electrode branches 失效
标题翻译：具有多个电极分支的垂直氮化镓基发光二极管
公开(公告)号：US07791100B2
公开(公告)日：2010-09-07
申请号：US11602285
申请日：2006-11-21
申请人： Su Yeol Lee , Dong Woo Kim , Seok Beom Choi , Tae Jun Kim
发明人： Su Yeol Lee , Dong Woo Kim , Seok Beom Choi , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38
摘要： A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.
摘要翻译：垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

10. 发明申请

US20070122504A1 Grape seed extract having neuronal cell-protection activity and the composition comprising the same for preventing and treating degenerative brain disease 审中-公开
标题翻译：具有神经元细胞保护活性的葡萄籽提取物和包含其的组合物用于预防和治疗退行性脑病
公开(公告)号：US20070122504A1
公开(公告)日：2007-05-31
申请号：US10595665
申请日：2004-11-02
申请人： Won Kook Moon , Dong Woo Kim , Moo Ho Won , In Koo Hwang
发明人： Won Kook Moon , Dong Woo Kim , Moo Ho Won , In Koo Hwang
IPC分类号： A61K36/87
CPC分类号： A61K36/87
摘要： The present invention relates to a grape seed extract showing neuronal cell protecting activity and the composition comprising the same having neuronal cell protecting activity for preventing and treating degenerative brain disease. The grape seed extract shows potent inhibiting activity of neuronal cell apoptosis occurred in brain ischemia as well as no toxicity, therefore, it can be used as the therapeutics or health food for treating and preventing degenerative brain diseases.
摘要翻译：本发明涉及一种显示神经元细胞保护活性的葡萄籽提取物及其组合物，其具有用于预防和治疗退行性脑病的神经元细胞保护活性。葡萄籽提取物显示脑缺血发生的神经细胞凋亡的有效抑制活性以及无毒性，因此可用作治疗和预防退行性脑疾病的治疗剂或保健食品。

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