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    • 84. 发明申请
    • DIFFERENTIAL ETCH RATE CONTROL OF LAYERS DEPOSITED BY CHEMICAL VAPOR DEPOSITION
    • 通过化学蒸气沉积沉积的层的差异蚀刻速率控制
    • US20080190886A1
    • 2008-08-14
    • US12027964
    • 2008-02-07
    • Soo Young ChoiGaku Furuta
    • Soo Young ChoiGaku Furuta
    • C23F1/00
    • H01L21/31116C03C17/34C03C2218/33C23C16/308C23C16/345C23C16/401H01L21/31111
    • A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
    • 提供了一种方法和装置,用于通过在相同或不同的处理室中沉积差分蚀刻速率的第一和第二材料层来控制多层堆叠的蚀刻轮廓。 在本发明的一个实施例中,提供了一种用于蚀刻衬底材料的方法,包括:以第一流速从含氮前体沉积具有第一蚀刻速率的第一含硅材料层,并在第一流速下沉积含硅前体 在第一含硅材料层上以不同于第一流速的第二流量从含氮前体沉积具有与第一蚀刻速率不同的第二蚀刻速率的第二含硅材料层, 蚀刻第一含硅材料层和第二含硅材料层,并在第一含硅材料层和第二含硅材料层中形成锥形蚀刻轮廓。