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81. 发明授权

US6030746A Di- and triphenyl monoterpene hydrocarbon derivatives, dissolution inhibitors, and chemically amplified positive resist compositions 失效
标题翻译：二苯基和三苯基单萜烃衍生物，溶解抑制剂和化学增强正性抗蚀剂组合物
公开(公告)号：US6030746A
公开(公告)日：2000-02-29
申请号：US831749
申请日：1997-04-01
申请人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C43/205 , C07C43/30 , C07C43/303 , C07C43/315 , C07C43/32 , C07C69/28 , C07C69/30 , C07C69/712 , C07C69/96 , C07F7/06 , C07F7/08 , C07F7/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C07C43/303 , C07C69/96 , G03F7/0045 , C07C2101/14 , G03F7/039 , Y10S430/118
摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.
摘要翻译：式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体耐腐蚀性。

82. 发明授权

US08129099B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129099B2
公开(公告)日：2012-03-06
申请号：US12370901
申请日：2009-02-13
申请人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
IPC分类号： G03F7/24 , G03F7/40 , G03F7/039 , G03F7/075
CPC分类号： H01L21/0337 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/40 , H01L21/0338
摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.
摘要翻译：通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

83. 发明授权

US06274286B1 Resist compositions 失效
标题翻译：抗蚀剂组合物
公开(公告)号：US06274286B1
公开(公告)日：2001-08-14
申请号：US09105003
申请日：1998-06-26
申请人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
发明人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
摘要翻译：一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。

84. 发明授权

US6048661A Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
标题翻译：聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺
公开(公告)号：US6048661A
公开(公告)日：2000-04-11
申请号：US33147
申请日：1998-03-02
申请人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
摘要翻译：提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

85. 发明授权

US08921025B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US08921025B2
公开(公告)日：2014-12-30
申请号：US12793284
申请日：2010-06-03
申请人： Tatsushi Kaneko , Koji Hasegawa , Tsunehiro Nishi
发明人： Tatsushi Kaneko , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03F7/00 , G03F7/20 , G03F7/039 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041
摘要： A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. Resin component (A) is a polymer comprising recurring units of formula (1) wherein R1 is H, CH2 or CF3, R2 is an acid labile group, R3 is H or CO2CH3, X is O, S, CH2 or CH2CH2, 0.01≦a
摘要翻译：正型抗蚀剂组合物包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）酸产生剂。树脂组分（A）是包含式（1）的重复单元的聚合物，其中R 1是H，CH 2或CF 3，R 2是酸不稳定基团，R 3是H或CO 2 CH 3，X是O，S，CH 2或CH 2 CH 2，0.01＆ ; a <1和0.01＆nlE; b <1。当通过ArF光刻处理时，组合物形成具有令人满意的掩模保真度和最小LWR的图案。

86. 发明申请

US20050208424A1 Polymer, resist composition and patterning process 审中-公开
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050208424A1
公开(公告)日：2005-09-22
申请号：US11084997
申请日：2005-03-21
申请人： Koji Hasegawa , Tsunehiro Nishi , Seiichiro Tachibana
发明人： Koji Hasegawa , Tsunehiro Nishi , Seiichiro Tachibana
IPC分类号： G03F7/033 , C08F220/26 , C08F220/28 , G03C1/492 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising repeat units of formulae (1) to (3) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2 and R5 are H or CH3, R3 and R4 are H or OH, and X is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译：包含式（1）至（3）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2和R 5是H或CH 3，R 3 O， >和R 4是H或OH，X是具有金刚烷结构的叔烷基。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。

87. 发明授权

US07718342B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07718342B2
公开(公告)日：2010-05-18
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9和R 11为H或CH 3，Y为亚甲基或O，当Y为亚甲基时，R 2为CO 2 R 10，当Y为O时，R 2为H或CO 2 R 10，R 10为C 1 -C 15烷基由O分隔，R 5和R 6是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

88. 发明申请

US20070148594A1 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20070148594A1
公开(公告)日：2007-06-28
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9，和R 11是H或CH 3，Y是亚甲基或O，R 2是CO 2 R 2，当Y为O时，当Y为亚甲基且R 2为H或CO 2 R 10时，SUP> 10 > 10是C 1 -C 15烷基，其可以被O，R 5和R 6分开， / SUP>是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

89. 发明申请

US20050282083A1 Polymer, resist composition and patterning process 审中-公开
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050282083A1
公开(公告)日：2005-12-22
申请号：US11155837
申请日：2005-06-20
申请人： Kenji Funatsu , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： C08F220/26 , G03C1/492 , G03F7/039
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising recurring units having formulae (1) and (2) and having a weight average molecular weight of 1,000 to 50,000. In the formulae, R1 and R3 are H or CH3, R4 is alkylene, R2 is a lactone structure-containing substituent group selected from formulae (R2-1) to (R2-4) wherein Y is CH2 or O, R5 is CO2R7 when Y is CH2, or R5 is H or CO2R7 when Y is O, R6 is H or alkyl, and R7 is alkyl which may be separated by at least one oxygen atom. The polymer is used as a base resin to formulate a resist composition, especially a chemically amplified positive resist composition which has a high sensitivity, resolution and dry etch resistance and forms a resist pattern having good substrate adhesion and least roughened sidewalls.
摘要翻译：一种包含具有式（1）和（2）并且重均分子量为1,000至50,000的重复单元的聚合物。在式中，R 1和R 3是H或CH 3，R 4是亚烷基， SUP> 2 是含有内酯结构的取代基，其选自式（R 2-2-2）至（R 2-2），其中Y是CH 当Y是CH 2时，R 2是O，R 5是CO 2 R 7，当Y为O时，R 5为H或CO 2 R 7，R 6为H或烷基 R 7是可被至少一个氧原子分离的烷基。该聚合物用作基础树脂以配制抗蚀剂组合物，特别是具有高灵敏度，分辨率和耐干蚀刻性的化学放大的正性抗蚀剂组合物，并形成具有良好的底物粘附性和最小粗糙化侧壁的抗蚀剂图案。

90. 发明授权

US07727704B2 Positive resist compositions and patterning process 有权
标题翻译：正极抗蚀剂组成和图案化工艺
公开(公告)号：US07727704B2
公开(公告)日：2010-06-01
申请号：US11773706
申请日：2007-07-05
申请人： Ryosuke Taniguchi , Tsunehiro Nishi , Tomohiro Kobayashi
发明人： Ryosuke Taniguchi , Tsunehiro Nishi , Tomohiro Kobayashi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译：在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H，甲基或三氟甲基，R2和R3是烷基，R4是一价烃基，X1是O，S或CH2CH2，X2是O，S，CH2或CH2CH2，n是1或2，a1，a2，c，d1和d2 各自为0至小于1，b为0.01至小于1，a1 + a2 + b + c + d1 + d2 = 1。当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。

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