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1. 发明授权

US6030746A Di- and triphenyl monoterpene hydrocarbon derivatives, dissolution inhibitors, and chemically amplified positive resist compositions 失效
标题翻译：二苯基和三苯基单萜烃衍生物，溶解抑制剂和化学增强正性抗蚀剂组合物
公开(公告)号：US6030746A
公开(公告)日：2000-02-29
申请号：US831749
申请日：1997-04-01
申请人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C43/205 , C07C43/30 , C07C43/303 , C07C43/315 , C07C43/32 , C07C69/28 , C07C69/30 , C07C69/712 , C07C69/96 , C07F7/06 , C07F7/08 , C07F7/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C07C43/303 , C07C69/96 , G03F7/0045 , C07C2101/14 , G03F7/039 , Y10S430/118
摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.
摘要翻译：式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体耐腐蚀性。

2. 发明授权

US6048661A Polymeric compounds, chemically amplified positive type resist materials and process for pattern formation 失效
标题翻译：聚合化合物，化学放大正型抗蚀剂材料和图案形成工艺
公开(公告)号：US6048661A
公开(公告)日：2000-04-11
申请号：US33147
申请日：1998-03-02
申请人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： Provided are polymeric compounds which, when used as base resins in resist materials, can yield chemical resist materials having high sensitivity, high resolution, a high exposure latitude, and good process adaptability, exhibiting excellent resistance to plasma etching, and giving resist patterns having high thermal resistance, as well as chemically amplified positive type resist materials using such polymeric compounds as base resins. These chemically amplified positive type resist materials use a base resin comprising a polymeric compound having a weight-average molecular weight of 1,000 to 500,000 and having one or more hydroxyl and/or carboxyl groups in the molecule, part or all of the hydrogen atoms of the hydroxyl and/or carboxyl groups being replaced by groups of the following general formula ##STR1## and additionally contain an acid generator, a dissolution inhibitor, a basic compound, and an aromatic compound having a group of the formula .tbd.C--COOH.
摘要翻译：提供了当作为抗蚀剂材料中的基础树脂使用时，可以产生具有高灵敏度，高分辨率，高曝光宽容度和良好的工艺适应性的化学抗蚀剂材料，表现出优异的等离子体蚀刻性，并且具有高抗蚀剂图案的抗蚀剂图案耐热性以及使用这种聚合物作为基础树脂的化学放大正型抗蚀剂材料。这些化学放大正型抗蚀剂材料使用包含重均分子量为1,000至500,000并且在分子中具有一个或多个羟基和/或羧基的聚合化合物的基础树脂，部分或全部氢原子羟基和/或羧基被下列通式的基团取代，另外含有酸产生剂，溶解抑制剂，碱性化合物和具有式3BOND C-COOH基团的芳族化合物。

3. 发明授权

US06830866B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US06830866B2
公开(公告)日：2004-12-14
申请号：US10170345
申请日：2002-06-14
申请人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7038
CPC分类号： G03F7/0392 , C08G61/06 , G03F7/0395 , G03F7/0397
摘要： A resist composition comprising a hydrogenated product of ring-opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance, and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：包含开环易位聚合物和聚（甲基）丙烯酸衍生物作为基础树脂的氢化产物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于微图案化电子束或深紫外线。

4. 发明授权

US6027854A Polymers chemically amplified positive resist compositions, and patterning method 失效
标题翻译：聚合物化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US6027854A
公开(公告)日：2000-02-22
申请号：US31560
申请日：1998-02-27
申请人： Tsunehiro Nishi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。酸不稳定基团和交联基团的结合量平均为全部酚羟基，醇羟基和羧基的0摩尔％至80摩尔％以上。聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是可以具有杂原子的二价C1-C18烃基，R4和R5是H或可以具有杂原子的一价C1-C18烃基，x和 y是满足x + y <5的整数，x'，y'和z'是满足x'+ y'+ z'= 5的整数，p，q和r是满足0

5. 发明授权

US06274286B1 Resist compositions 失效
标题翻译：抗蚀剂组合物
公开(公告)号：US06274286B1
公开(公告)日：2001-08-14
申请号：US09105003
申请日：1998-06-26
申请人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
发明人： Jun Hatakeyama , Tsunehiro Nishi , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition comprising at least one basic compound of the following general formula (1) or (2): wherein R1, R2, R3, R7, and R8 are independently normal, branched or cyclic alkylene groups having 1 to 20 carbon atoms, R4, R5, R6, R9, and R10 are independently hydrogen, alkyl groups having 1 to 20 carbon atoms or amino groups, R4 and R5, R5 and R6, R4 and R6, or R8, R5 and R5, and R9 and R10, taken together, may form a ring, letters k, m and n are integers of 0 to 20, with the proviso that hydrogen is excluded from R4, R5, R6, R9 and R10 when k, m or n is equal to 0. The resist compositions of the present invention are effective for preventing resist films from thinning and for increasing the focus margin of an isolated pattern.
摘要翻译：一种化学放大正型抗蚀剂组合物，其包含至少一种下列通式（1）或（2）的碱性化合物：其中R 1，R 2，R 3，R 7和R 8独立地为具有1至20个碳的正，支链或环状亚烷基原子，R 4，R 5，R 6，R 9和R 10独立地是氢，具有1至20个碳原子的烷基或氨基，R 4和R 5，R 5和R 6，R 4和R 6，或R 8，R 5和R 5， R 10一起可以形成环，字母k，m和n是0至20的整数，条件是当k，m或n等于0时，从R4，R5，R6，R9和R10排除氢。本发明的抗蚀剂组合物对于防止抗蚀剂膜变薄和增加隔离图案的聚焦边缘是有效的。

6. 发明授权

US08129099B2 Double patterning process 有权
标题翻译：双重图案化工艺
公开(公告)号：US08129099B2
公开(公告)日：2012-03-06
申请号：US12370901
申请日：2009-02-13
申请人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
发明人： Katsuya Takemura , Jun Hatakeyama , Tsunehiro Nishi , Kazuhiro Katayama , Toshinobu Ishihara
IPC分类号： G03F7/24 , G03F7/40 , G03F7/039 , G03F7/075
CPC分类号： H01L21/0337 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/11 , G03F7/40 , H01L21/0338
摘要： Double patterns are formed by coating a first chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a first positive resist pattern, treating the first resist pattern to be alkali soluble and solvent resistant, coating a second resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a second positive resist pattern. The last development step includes dissolving away the reversed first resist pattern and achieving reversal transfer.
摘要翻译：通过涂布第一化学放大的正型抗蚀剂组合物形成双重图案，该组合物包含含酸不稳定基团的树脂和光酸产生剂，并且预烘烤以在可加工的基材上形成抗蚀剂膜，将抗蚀剂膜暴露于高能辐射，PEB和用碱性显影剂显影以形成第一正性抗蚀剂图案，将第一抗蚀剂图案处理为碱溶性和耐溶剂性，涂覆第二抗蚀剂组合物和预烘烤以形成反转膜，并将反转膜暴露于高能量辐射， PEB，并用碱性显影剂显影以形成第二正性抗蚀剂图案。最后的发展步骤包括将反转的第一抗蚀剂图案溶解并实现反转印。

7. 发明授权

US06605408B2 Resist composition and patterning process 有权
公开(公告)号：US06605408B2
公开(公告)日：2003-08-12
申请号：US09832919
申请日：2001-04-12
申请人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
发明人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
IPC分类号： C08F200
CPC分类号： G03F7/0395 , C08G61/06 , C08G61/08 , G03F7/0397
摘要： A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

8. 发明申请

US20050089796A1 Polymer, resist material and patterning processing 有权
标题翻译：聚合物，抗蚀材料和图案加工
公开(公告)号：US20050089796A1
公开(公告)日：2005-04-28
申请号：US10933013
申请日：2004-09-01
申请人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
发明人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
IPC分类号： C08F220/26 , C08F220/28 , G03C1/76 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26 , Y10S430/111
摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer.
摘要翻译：提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元，下面。还提供了包含聚合物的抗蚀剂材料。此外，提供了图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影。

9. 发明授权

US07157207B2 Polymer, resist material and patterning processing 有权
标题翻译：聚合物，抗蚀材料和图案加工
公开(公告)号：US07157207B2
公开(公告)日：2007-01-02
申请号：US10933013
申请日：2004-09-01
申请人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
发明人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
IPC分类号： G03F7/39 , G03F7/30 , C08F124/00 , C08F134/02 , C08F24/00
CPC分类号： G03F7/0397 , C08F220/26 , Y10S430/111
摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer
摘要翻译：提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元，下面。还提供了包含聚合物的抗蚀剂材料。此外，提供了一种图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影

10. 发明授权

US06703183B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06703183B2
公开(公告)日：2004-03-09
申请号：US10241530
申请日：2002-09-12
申请人： Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Satoshi Watanabe , Shigehiro Nagura
发明人： Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Satoshi Watanabe , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： C08F220/18 , G03F7/0397
摘要： A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：包含式（1）和（2）的重复单元的聚合物，其中R 1和R 3为H或甲基，R 2和R 4为C 1-15烷基，R 5为R 新颖的是H或R 5和R 7，并且R 6和R 8形成三亚甲基或1,3-亚环戊基并具有1,000-500,000的Mw。包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

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