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1. 发明授权

US07135270B2 Resist polymer, resist composition and patterning process 有权
标题翻译：抗蚀聚合物，抗蚀剂组成和图案化工艺
公开(公告)号：US07135270B2
公开(公告)日：2006-11-14
申请号：US10911676
申请日：2004-08-05
申请人： Takeru Watanabe , Tsunehiro Nishi , Junji Tsuchiya , Kenji Funatsu , Koji Hasegawa
发明人： Takeru Watanabe , Tsunehiro Nishi , Junji Tsuchiya , Kenji Funatsu , Koji Hasegawa
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30 , C08F124/00
CPC分类号： C08F220/18 , C08F220/26 , G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1–C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译：包含式（1），（2），（3）和（4）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2，R 3和R 6是H或CH 3 N >，R 4和R 5是H或OH，X是具有双环[2.2.1]庚烷骨架的叔外烷基，由式（X-1）至（X-4）：其中R 7为C 1 -C 10烷基，Y为叔烷基具有金刚烷结构的组。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。

2. 发明授权

US07718342B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07718342B2
公开(公告)日：2010-05-18
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9和R 11为H或CH 3，Y为亚甲基或O，当Y为亚甲基时，R 2为CO 2 R 10，当Y为O时，R 2为H或CO 2 R 10，R 10为C 1 -C 15烷基由O分隔，R 5和R 6是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

3. 发明申请

US20070148594A1 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20070148594A1
公开(公告)日：2007-06-28
申请号：US11645751
申请日：2006-12-27
申请人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Tomohiro Kobayashi , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F220/06 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , Y10S430/108 , Y10S430/111
摘要： A polymer is provided comprising recurring units having formulas (1), (2), (3), (4), (5), and (6) in amounts of 1-60 mol % (1), 1-60 mol % (2), 1-50 mol % (3), 0-60 mol % (4), 0-30 mol % (5), and 0-30 mol % (6), and having a Mw of 3,000-30,000 and a Mw/Mn of 1.5-2.5. R1, R3, R4, R7, R9, and R11 are H or CH3, Y is methylene or O, R2 is CO2R10 when Y is methylene and R2 is H or CO2R10 when Y is O, R10 is C1-C15 alkyl which may be separated by O, R5 and R6 are H or OH, R8 is a tertiary ester type acid-labile protective group, and R12 is OH-containing fluoroalkyl. A resist composition comprising the polymer has a high resolution and is improved in line edge roughness and I/G bias.
摘要翻译：提供的聚合物包含具有式（1），（2），（3），（4），（5）和（6）的重复单元，其含量为1-60mol％（1），1-60mol％（2），1-50mol％（3），0-60mol％（4），0-30mol％（5）和0-30mol％（6），Mw为3,000〜 Mw / Mn为1.5-2.5。 R 1，R 3，R 4，R 7，R 9，和R 11是H或CH 3，Y是亚甲基或O，R 2是CO 2 R 2，当Y为O时，当Y为亚甲基且R 2为H或CO 2 R 10时，SUP> 10 > 10是C 1 -C 15烷基，其可以被O，R 5和R 6分开， / SUP>是H或OH，R 8是叔酯型酸不稳定保护基，R 12是含OH的氟代烷基。包含聚合物的抗蚀剂组合物具有高分辨率并且在线边缘粗糙度和I / G偏压方面得到改善。

4. 发明申请

US20050282083A1 Polymer, resist composition and patterning process 审中-公开
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US20050282083A1
公开(公告)日：2005-12-22
申请号：US11155837
申请日：2005-06-20
申请人： Kenji Funatsu , Koji Hasegawa , Tsunehiro Nishi
发明人： Kenji Funatsu , Koji Hasegawa , Tsunehiro Nishi
IPC分类号： C08F220/26 , G03C1/492 , G03F7/039
CPC分类号： G03F7/0397 , C08F220/26
摘要： A polymer comprising recurring units having formulae (1) and (2) and having a weight average molecular weight of 1,000 to 50,000. In the formulae, R1 and R3 are H or CH3, R4 is alkylene, R2 is a lactone structure-containing substituent group selected from formulae (R2-1) to (R2-4) wherein Y is CH2 or O, R5 is CO2R7 when Y is CH2, or R5 is H or CO2R7 when Y is O, R6 is H or alkyl, and R7 is alkyl which may be separated by at least one oxygen atom. The polymer is used as a base resin to formulate a resist composition, especially a chemically amplified positive resist composition which has a high sensitivity, resolution and dry etch resistance and forms a resist pattern having good substrate adhesion and least roughened sidewalls.
摘要翻译：一种包含具有式（1）和（2）并且重均分子量为1,000至50,000的重复单元的聚合物。在式中，R 1和R 3是H或CH 3，R 4是亚烷基， SUP> 2 是含有内酯结构的取代基，其选自式（R 2-2-2）至（R 2-2），其中Y是CH 当Y是CH 2时，R 2是O，R 5是CO 2 R 7，当Y为O时，R 5为H或CO 2 R 7，R 6为H或烷基 R 7是可被至少一个氧原子分离的烷基。该聚合物用作基础树脂以配制抗蚀剂组合物，特别是具有高灵敏度，分辨率和耐干蚀刻性的化学放大的正性抗蚀剂组合物，并形成具有良好的底物粘附性和最小粗糙化侧壁的抗蚀剂图案。

5. 发明申请

US20050031989A1 Resist polymer, resist composition and patterning process 有权
标题翻译：抗蚀聚合物，抗蚀剂组成和图案化工艺
公开(公告)号：US20050031989A1
公开(公告)日：2005-02-10
申请号：US10911676
申请日：2004-08-05
申请人： Takeru Watanabe , Tsunehiro Nishi , Junji Tsuchiya , Kenji Funatsu , Koji Hasegawa
发明人： Takeru Watanabe , Tsunehiro Nishi , Junji Tsuchiya , Kenji Funatsu , Koji Hasegawa
IPC分类号： G03F7/004 , C08F220/18 , C08F220/26 , C08F220/28 , G03F7/039 , H01L21/027 , G03C1/76
CPC分类号： C08F220/18 , C08F220/26 , G03F7/0397 , Y10S430/111
摘要： A polymer comprising recurring units of formulae (1), (2), (3) and (4) increases a dissolution rate in an alkali developer under the action of an acid. R1, R2, R3 and R6 are H or CH3, R4 and R5 are H or OH, X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane framework, represented by any of formulae (X-1) to (X-4): wherein R7 is C1-C10 alkyl, and Y is a tertiary alkyl group having an adamantane structure. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized proximity bias and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
摘要翻译：包含式（1），（2），（3）和（4）的重复单元的聚合物在酸的作用下增加碱显影剂中的溶解速率。 R 1，R 2，R 3和R 6是H或CH 3，R 4和R 5是H或OH，X是具有双环[ 2.2.1]庚烷骨架，由式（X-1）至（X-4）中的任一个表示：其中R 7为C 1 -C 10烷基，Y为具有金刚烷结构的叔烷基。包含本发明聚合物的抗蚀剂组合物对高能量辐射具有敏感性，改进的分辨率和最小化的接近偏压，并且借助于用于VLSI制造的电子束或深UV的微图案化。

6. 发明授权

US06835525B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06835525B2
公开(公告)日：2004-12-28
申请号：US10073223
申请日：2002-02-13
申请人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Kenji Funatsu
发明人： Tsunehiro Nishi , Mutsuo Nakashima , Seiichiro Tachibana , Kenji Funatsu
IPC分类号： G03F7038
CPC分类号： C08F224/00 , C08F216/16 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/11 , Y10S430/111
摘要： A novel polymer is obtained by copolymerizing a (meth)acrylic acid derivative with a vinyl ether compound, an allyl ether compound and an oxygen-containing alicyclic olefin compound. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：通过使（甲基）丙烯酸衍生物与乙烯基醚化合物，烯丙基醚化合物和含氧脂环族烯烃化合物共聚得到新的聚合物。包含作为基础树脂的聚合物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率，耐腐蚀性和最小化的溶胀，并且使其自身具有电子束或深UV的微图形化。

7. 发明申请

US20110054133A1 RESIST POLYMER, PREPARING METHOD, RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
标题翻译：耐候聚合物，制备方法，耐蚀组合物和图案处理方法
公开(公告)号：US20110054133A1
公开(公告)日：2011-03-03
申请号：US12940511
申请日：2010-11-05
申请人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
发明人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
IPC分类号： C08F224/00
CPC分类号： G03F7/0397 , C08F2/38 , G03F7/0046
摘要： A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
摘要翻译：通过预先向反应器中加入含有链转移剂并保持在聚合温度的反应器，并连续地或不连续地向反应器中滴加含有单体和聚合引发剂的溶液进行自由基聚合来制备抗蚀剂用聚合物。聚合物具有基本上不溶性组分的最小化含量。使用该聚合物作为基础树脂的抗蚀剂组合物通过光刻处理产生最小数目的缺陷，并且可用于形成微观图案。

8. 发明申请

US20050089796A1 Polymer, resist material and patterning processing 有权
标题翻译：聚合物，抗蚀材料和图案加工
公开(公告)号：US20050089796A1
公开(公告)日：2005-04-28
申请号：US10933013
申请日：2004-09-01
申请人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
发明人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
IPC分类号： C08F220/26 , C08F220/28 , G03C1/76 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , C08F220/26 , Y10S430/111
摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer.
摘要翻译：提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元，下面。还提供了包含聚合物的抗蚀剂材料。此外，提供了图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影。

9. 发明授权

US07157207B2 Polymer, resist material and patterning processing 有权
标题翻译：聚合物，抗蚀材料和图案加工
公开(公告)号：US07157207B2
公开(公告)日：2007-01-02
申请号：US10933013
申请日：2004-09-01
申请人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
发明人： Kenji Funatsu , Tsunehiro Nishi , Shigehiro Nagura
IPC分类号： G03F7/39 , G03F7/30 , C08F124/00 , C08F134/02 , C08F24/00
CPC分类号： G03F7/0397 , C08F220/26 , Y10S430/111
摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer
摘要翻译：提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元，下面。还提供了包含聚合物的抗蚀剂材料。此外，提供了一种图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影

10. 发明申请

US20070264592A1 Resist polymer, preparing method, resist composition and patterning process 审中-公开
标题翻译：抗蚀聚合物，制备方法，抗蚀剂组成和图案化工艺
公开(公告)号：US20070264592A1
公开(公告)日：2007-11-15
申请号：US11797683
申请日：2007-05-07
申请人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
发明人： Seiichiro Tachibana , Kenji Funatsu , Takeshi Kinsho , Tsunehiro Nishi
IPC分类号： G03C1/00
CPC分类号： G03F7/0397 , C08F2/38 , G03F7/0046
摘要： A polymer for resist use is prepared by previously charging a reactor with a solution containing a chain transfer agent and holding at a polymerization temperature, and continuously or discontinuously adding dropwise a solution containing monomers and a polymerization initiator to the reactor for radical polymerization. The polymer has a minimized content of a substantially insoluble component. A resist composition using the polymer as a base resin produces a minimized number of defects when processed by photolithography and is useful in forming microscopic patterns.
摘要翻译：通过预先向反应器中加入含有链转移剂并保持在聚合温度的反应器，并连续地或不连续地向反应器中滴加含有单体和聚合引发剂的溶液进行自由基聚合来制备抗蚀剂用聚合物。聚合物具有基本上不溶性组分的最小化含量。使用该聚合物作为基础树脂的抗蚀剂组合物通过光刻处理产生最小数目的缺陷，并且可用于形成微观图案。

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