专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20120153727A1 INVERTER AND POWER CONVERTER HAVING INVERTER MOUNTED THEREIN 有权
标题翻译：具有逆变器的逆变器和电力转换器
公开(公告)号：US20120153727A1
公开(公告)日：2012-06-21
申请号：US13393344
申请日：2010-08-31
申请人： Yoh Takano , Tetsuya Yamamoto
发明人： Yoh Takano , Tetsuya Yamamoto
IPC分类号： H02M7/5387
CPC分类号： H02M7/483 , Y10T307/50 , Y10T307/675 , Y10T307/696 , Y10T307/858
摘要： Disclosed is an inverter having improved power conversion efficiency. The inverter (200) converts direct current power supplied from a plurality of direct current power supplies (V1, V2) having different voltages into alternating current power. The inverter (200) is provided with a control unit (20). The control unit (20) generates modified sine waves using a power supply voltage (E1) of the power supplied from the first direct current power supply (V1), a power supply voltage (E2) of the power supplied from the second direct current power supply (V2), and a potential difference (E1−E2) between the two power supply voltages. The control unit (20) generates the modified sine waves by controlling H bridge circuits provided for the direct current power supplies (V1, V2), respectively.
摘要翻译：公开了一种具有提高的功率转换效率的逆变器。逆变器（200）将从具有不同电压的多个直流电源（V1，V2）提供的直流电力转换成交流电力。逆变器（200）设置有控制单元（20）。控制单元（20）使用从第一直流电源（V1）供给的电力的电源电压（E1），从第二直流电力供给的电力的电源电压（E2）来生成修正正弦波电源（V2）和两个电源电压之间的电位差（E1-E2）。控制单元（20）分别通过控制为直流电源（V1，V2）提供的H桥电路来产生修正的正弦波。

82. 发明授权

US08197141B2 Fluid dynamic bearing device 有权
标题翻译：流体动力轴承装置
公开(公告)号：US08197141B2
公开(公告)日：2012-06-12
申请号：US12303867
申请日：2007-03-01
申请人： Tetsuya Yamamoto , Tetsuya Kurimura
发明人： Tetsuya Yamamoto , Tetsuya Kurimura
IPC分类号： F16C32/06
CPC分类号： F16C17/107 , F16C33/107 , F16C33/74 , F16C2370/12 , G11B19/2036
摘要： A lid member (10) is formed in a cup-like shape while having a plate portion (10a) and a cylindrical fixed portion (10b) axially protruding from an outer peripheral end of the plate portion (10a). An outer peripheral surface (10b1) of the fixed portion (10b), which serves as a fixation surface (B), is fixed to an inner peripheral surface (7a) of a housing (7) as an outer member (A). An axial dimension of the fixation surface (B) is larger than a thickness of the plate portion (10a), and hence it is possible to thinly-form the plate portion (10a) and to increase a fixing force between the lid member (10) and the housing (7). As a result, an axial dimension of a fluid dynamic bearing device can be reduced and durability thereof can be simultaneously increased.
摘要翻译：盖构件（10）形成为杯状，同时具有从板部（10a）的外周端部轴向突出的板部（10a）和圆筒形固定部（10b）。作为固定面（B）的固定部（10b）的外周面（10b1）固定在外壳（A）的壳体（7）的内周面（7a）上。固定面（B）的轴向尺寸大于板部（10a）的厚度，因此可以薄板地形成板部（10a），并且增加盖部件（10）之间的固定力）和壳体（7）。结果，能够降低流体动力轴承装置的轴向尺寸，同时可以提高耐久性。

83. 发明授权

US08194443B2 Memory device and memory 有权
标题翻译：内存设备和内存
公开(公告)号：US08194443B2
公开(公告)日：2012-06-05
申请号：US12796802
申请日：2010-06-09
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroshi Kano , Hiroyuki Ohmori , Minoru Ikarashi , Tetsuya Yamamoto , Kazuhiro Bessho , Yutaka Higo , Yuki Oishi , Shinichiro Kusunoki
IPC分类号： G11C11/14
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3277 , H01L43/08 , Y10S977/933 , Y10S977/935
摘要： A memory device includes: a memory layer that retains information based on a magnetization state of a magnetic material, a first intermediate layer and a second intermediate layer that are provided to sandwich the memory layer and are each formed of an insulator, a first fixed magnetic layer disposed on an opposite side of the first intermediate layer from the memory layer, a second fixed magnetic layer disposed on an opposite side of the second intermediate layer from the memory layer, and a nonmagnetic conductive layer provided between either the first intermediate layer or the second intermediate layer and the memory layer, the memory device being configured so that spin-polarized electrons are injected thereinto in a stacking direction to change the magnetization direction of the memory layer, thereby storing information in the memory layer.
摘要翻译：存储器件包括：存储层，其基于磁性材料的磁化状态保持信息，第一中间层和第二中间层，其被设置为夹持存储层，并且各自由绝缘体，第一固定磁体层，设置在与存储层相反的第一中间层的相对侧上;第二固定磁性层，设置在与存储层相反的第二中间层的相反侧;以及非磁性导电层，设置在第一中间层或第二中间层之间第二中间层和存储层，存储器件被配置为使得自旋极化电子在层叠方向上被注入到其中以改变存储层的磁化方向，从而将信息存储在存储层中。

84. 发明申请

US20120115340A1 FIXATION STRUCTURE FOR FIXING L-SHAPED PLATE TERMINAL TO INSULATING MEMBER 有权
标题翻译：用于固定L型板端子用于绝缘构件的固定结构
公开(公告)号：US20120115340A1
公开(公告)日：2012-05-10
申请号：US13292533
申请日：2011-11-09
申请人： Tetsuya Yamamoto
发明人： Tetsuya Yamamoto
IPC分类号： H01R12/71
CPC分类号： H01R12/721 , H01R12/58 , H01R13/41
摘要： There is provide a fixation structure for fixing a L-shaped plate terminal to a terminal fixation portion of an insulating member, in which the L-shaped plate terminal can be fixed with its shape kept in a L-shape, which can improve positioning of the L-shaped plate terminal. There are provided engagement portions formed at an insert portion of the terminal fixation portion of the insulating member and at a board connection portion of the L-shaped plate terminal. When the board connection portion is inserted into the insert portion, the engagement portions of the insert portion and the board connection portion engage each other, thereby fixing the insert portion and the board connection portion to each other. As a result, the positioning of the board connection portion is improved, while preventing looseness in the fixation of the board connection portion.
摘要翻译：提供了一种用于将L形板端子固定到绝缘构件的端子固定部分的固定结构，其中L形板端子可以以保持为L形的形状被固定，这可以改善 L形板端子。在绝缘构件的端子固定部分的插入部分和L形板端子的板连接部分处形成有接合部。当板连接部分插入到插入部分中时，插入部分和板连接部分的接合部分彼此接合，从而将插入部分和板连接部分彼此固定。结果，改善了板连接部的定位，同时防止了板连接部的固定松动。

85. 发明申请

US20110266660A1 INSULATING FILM FOR SEMICONDUCTOR DEVICE, PROCESS AND APPARATUS FOR PRODUCING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的绝缘膜，用于制造用于半导体器件的绝缘膜的方法和装置，半导体器件以及用于制造半导体器件的工艺
公开(公告)号：US20110266660A1
公开(公告)日：2011-11-03
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31 , C23C16/52 , C23C16/50 , H01L21/768 , H01L23/28
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译：本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性，以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。

86. 发明申请

US20110117147A1 COOLING SENSATION AGENT COMPOSITION AND SENSORY STIMULATION AGENT COMPOSITION 失效
标题翻译：冷却感觉剂组合物和感觉刺激剂组合物
公开(公告)号：US20110117147A1
公开(公告)日：2011-05-19
申请号：US12936160
申请日：2009-04-01
申请人： Kenya Ishida , Takashi Aida , Tetsuya Yamamoto
发明人： Kenya Ishida , Takashi Aida , Tetsuya Yamamoto
IPC分类号： A61K8/49 , A61K8/55 , A61Q11/00 , C07C69/96 , C07D317/22 , A61Q17/00 , A61K31/357
CPC分类号： C07D317/36 , A23L27/203 , A23L27/2052 , A61K8/0208 , A61K8/37 , A61K8/4973 , A61K2800/244 , A61Q5/02 , A61Q11/00 , A61Q13/00 , A61Q15/00 , A61Q19/00 , A61Q19/10 , C07C69/24 , C07C69/96 , C07C2601/14
摘要： The invention relates to a cooling sensation agent composition with a prolonged cool sensation effect comprising at least one compound selected from Formula (1) wherein each of A and B is a hydrogen atom or a hydrocarbon group which may have one or more substituents, in which A and B are not hydrogen atoms simultaneously, and the total number of carbon atoms in A and B is in the range of 6 to 18; and Formulae (2) to (4) wherein R1, R2, and R3 each represent a residue of an alcohol selected from 1-menthol, 1-isopulegol, 3-(1-menthoxy)propan-1,2-diol, 2-(1-menthoxy)ethan-1-ol, 3-(1-menthoxy)propan-1-ol, 2-methyl-3-(1-menthoxy)propan-1,2-diol and para-menthan-3,8-diol), and R4 represents a residue of a branched or straight-chain, cyclic or linear, or saturated or unsaturated alcohol having 6 to 18 carbon atoms that may have one or more aromatic rings that may have a condensed ring and substituent groups such as hydroxyl and ether groups; and R6 represents a hydrocarbon group having 11 to 19 carbon atoms that may be branched and contain one or more unsaturated bonds. The invention also relates to a sensory stimulation agent composition comprising the cooling sensation agent composition; a flavor or fragrance composition, a beverage or food product, a perfume or cosmetic product, a toiletry product, a daily utensil product or grocery, a fiber, a fiber product, a cloth or a medicine comprising the cooling sensation agent composition or the sensory stimulation agent composition; a production method thereof; a cooling processing method of a fiber, fiber product or a cloth, comprising compounding the cooling sensation agent composition or the sensory stimulation agent composition; and new compounds.
摘要翻译：本发明涉及具有延长的凉爽感觉效果的冷却感觉剂组合物，其包含至少一种选自式（1）的化合物，其中A和B各自为氢原子或可具有一个或多个取代基的烃基，其中 A和B不同时为氢原子，A和B中碳原子总数为6〜18; 和式（2）至（4）其中R 1，R 2和R 3各自表示选自1-薄荷醇，1-异胡耳醇，3-（1-薄荷氧基）丙-1,2-二醇，2- （1-薄荷氧基）乙-1-醇，3-（1-薄荷氧基）丙-1-醇，2-甲基-3-（1-薄荷氧基）丙-1,2-二醇和对 - 薄荷烷-3,8 - 二醇），R4代表具有6-18个碳原子的支链或直链，环状或直链或饱和或不饱和醇的残基，其可具有一个或多个可具有稠环的芳环和取代基如作为羟基和醚基团; R6表示可以具有支链并含有一个以上的不饱和键的碳原子数为11〜19的烃基。本发明还涉及包含冷却感觉剂组合物的感觉刺激剂组合物; 香料或香料组合物，饮料或食品，香水或化妆品，化妆品，日常用品或杂货，纤维，纤维制品，布或包含该冷却感觉组合物或感官的药物刺激剂组成; 其制造方法; 纤维，纤维制品或布的冷却处理方法，其包括将冷却感觉剂组合物或感觉刺激剂组合物混合; 和新化合物。

87. 发明授权

US07944037B2 Semiconductor device and semiconductor memory device 有权
标题翻译：半导体器件和半导体存储器件
公开(公告)号：US07944037B2
公开(公告)日：2011-05-17
申请号：US12762401
申请日：2010-04-19
申请人： Taku Nishiyama , Tetsuya Yamamoto , Kiyokazu Okada
发明人： Taku Nishiyama , Tetsuya Yamamoto , Kiyokazu Okada
IPC分类号： H01L23/02
CPC分类号： H01L25/18 , H01L23/3121 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48145 , H01L2224/48147 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2225/06506 , H01L2225/0651 , H01L2225/06562 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01043 , H01L2924/0105 , H01L2924/01052 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A plurality of semiconductor elements configuring a first element group are stacked in a step-like shape on a wiring board. A plurality of semiconductor elements configuring a second element group are stacked in a step-like shape on the first element group toward a direction opposite to the stepped direction of the first element group. The semiconductor elements are electrically connected to connection pads of the wiring board through metallic wires. Among the plurality of semiconductor elements configuring the second element group, the lowermost semiconductor element has a thickness larger than those of the other semiconductor elements.
摘要翻译：构成第一元件组的多个半导体元件在布线板上以阶梯状形式堆叠。构成第二元件组的多个半导体元件朝向与第一元件组的阶梯方向相反的方向在第一元件组上以阶梯状形状堆叠。半导体元件通过金属线电连接到布线板的连接焊盘。在构成第二元件组的多个半导体元件中，最下半导体元件的厚度大于其它半导体元件的厚度。

88. 发明申请

US20110077309A1 HUMECTANT COMPOSITION 审中-公开
标题翻译：成分组成
公开(公告)号：US20110077309A1
公开(公告)日：2011-03-31
申请号：US12959670
申请日：2010-12-03
申请人： Tetsuya Yamamoto , Kenya Ishida
发明人： Tetsuya Yamamoto , Kenya Ishida
IPC分类号： A61K47/42 , A61K47/10 , A61K47/14 , A61K47/22 , A61K47/36 , A61K47/46 , A61Q5/12 , A61Q19/00 , A61P17/00 , A61K8/33 , A61Q13/00
CPC分类号： A61K8/345 , A61Q5/00 , A61Q5/02 , A61Q5/12 , A61Q13/00 , A61Q19/00 , A61Q19/10
摘要： The present invention relates to a humectant composition containing, as component (A), at least one member selected from a menthol derivative represented by the following formula (1) and p-menthane-3,8-diol: in which R is an alkylene group having 2 to 5 carbon atoms which may be substituted with at least one member selected from the group consisting of a methyl group and a hydroxyl group, and n is an integer of 1 to 3. The humectant composition of the present invention provides an excellent moisture-retention effect.
摘要翻译：本发明涉及作为组分（A）的至少一种选自由下式（1）表示的薄荷醇衍生物和对 - 薄荷烷-3,8-二醇中的至少一种的组合物：其中R是亚烷基具有2至5个碳原子的基团，其可以被选自甲基和羟基中的至少一种取代，n是1至3的整数。本发明的保湿组合物提供优异的保湿效果。

89. 发明授权

US07898813B2 Semiconductor memory device and semiconductor memory card using the same 有权
标题翻译：半导体存储器件和使用其的半导体存储卡
公开(公告)号：US07898813B2
公开(公告)日：2011-03-01
申请号：US11767801
申请日：2007-06-25
申请人： Taku Nishiyama , Kiyokazu Okada , Yoriyasu Ando , Tetsuya Yamamoto , Naohisa Okumura
发明人： Taku Nishiyama , Kiyokazu Okada , Yoriyasu Ando , Tetsuya Yamamoto , Naohisa Okumura
IPC分类号： H05K1/14
CPC分类号： H01L27/105 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L25/18 , H01L27/11517 , H01L2224/05554 , H01L2224/05599 , H01L2224/32145 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48464 , H01L2224/49113 , H01L2224/73265 , H01L2224/85399 , H01L2225/0651 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/181 , H01L2924/00012 , H01L2224/32225 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor memory device is provided with a wiring board which includes an element mounting portion and connection pads. Plural semiconductor memory elements are stacked on the element mounting portion of the wiring board. The semiconductor memory element of a lower side has a thickness greater than that of the semiconductor memory element of an upper side. The semiconductor memory elements are electrically connected to the connection pads of the wiring board via metal wires.
摘要翻译：半导体存储器件设置有包括元件安装部分和连接焊盘的布线板。多个半导体存储元件堆叠在布线板的元件安装部分上。下侧的半导体存储元件的厚度大于上侧的半导体存储元件的厚度。半导体存储元件通过金属线电连接到布线板的连接焊盘。

90. 发明授权

US07869272B2 Memory device and memory for retaining information based on amagnetization state of a magnetic material 有权
标题翻译：基于磁性材料的磁化状态来保存信息的存储器件和存储器
公开(公告)号：US07869272B2
公开(公告)日：2011-01-11
申请号：US12506637
申请日：2009-07-21
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Tetsuya Yamamoto , Yutaka Higo , Yuki Oishi , Hiroshi Kano
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659
摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.
摘要翻译：提供存储器件。存储器件包括存储层和固定磁化层。存储层基于磁性材料的磁化状态保留信息。通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式