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1. 发明申请

US20110266660A1 INSULATING FILM FOR SEMICONDUCTOR DEVICE, PROCESS AND APPARATUS FOR PRODUCING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE 有权
标题翻译：用于半导体器件的绝缘膜，用于制造用于半导体器件的绝缘膜的方法和装置，半导体器件以及用于制造半导体器件的工艺
公开(公告)号：US20110266660A1
公开(公告)日：2011-11-03
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31 , C23C16/52 , C23C16/50 , H01L21/768 , H01L23/28
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译：本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性，以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。

2. 发明授权

US08288294B2 Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor device 有权
标题翻译：半导体装置用绝缘膜，半导体装置用绝缘膜的制造方法及装置，半导体装置及半导体装置的制造方法
公开(公告)号：US08288294B2
公开(公告)日：2012-10-16
申请号：US13001256
申请日：2009-06-25
申请人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
发明人： Hidetaka Kafuku , Toshihito Fujiwara , Toshihiko Nishimori , Tadashi Shimazu , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Takuya Kamiyama , Tetsuya Yamamoto , Shinya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/318 , C23C16/342 , C23C16/507 , H01L21/02112 , H01L21/02274 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber (2); an electromagnetic wave is introduced into the chamber (2) using with an inductive coupling type plasma generation mechanism (4, 5, 6) to convert the gas into a plasma; a substrate (8) is placed in a plasma diffusion region of the plasma; gas-phase polymerization is performed with borazine skeletal molecules, as a fundamental unit, dissociated from the alkylborazine compound by the plasma so as to form the insulating film for semiconductor devices on the substrate (8).
摘要翻译：本发明的目的是提供具有低介电常数，低漏电流和高机械强度特性的半导体器件用绝缘膜，随着时间的推移，这些特性的变化变小，具有优异的耐水性，以及提供用于制造用于半导体器件的绝缘膜，半导体器件和用于制造半导体器件的工艺的工艺和设备。在室（2）内供给含有气化了规定的烷基
硼氮化合物的原料气体的气体。使用电感耦合型等离子体产生机构（4,5,6）将电磁波引入腔室（2），以将气体转换成等离子体; 将衬底（8）放置在等离子体的等离子体扩散区域中; 用作为基本单元的环硼烷骨架分子进行气相聚合，通过等离子体与烷基硼氮化合物离解，从而在基板（8）上形成用于半导体器件的绝缘膜。

3. 发明申请

US20100181654A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING APPARATUS OF THE SAME 审中-公开
标题翻译：半导体器件的制造方法，半导体器件的绝缘膜及其制造装置
公开(公告)号：US20100181654A1
公开(公告)日：2010-07-22
申请号：US12664605
申请日：2009-06-13
申请人： Toshihito Fujiwara , Toshihiko Nishimori , Toshiya Watanabe , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Chiho Mizushima , Takuya Kamiyama , Tetsuya Yamamoto
发明人： Toshihito Fujiwara , Toshihiko Nishimori , Toshiya Watanabe , Naoki Yasuda , Hideharu Nobutoki , Teruhiko Kumada , Chiho Mizushima , Takuya Kamiyama , Tetsuya Yamamoto
IPC分类号： H01L23/58 , H01L21/471
CPC分类号： H01L21/02118 , C23C16/342 , C23C16/505 , H01L21/02274 , H01L21/02348 , H01L21/02351 , H01L21/312 , H01L21/76801
摘要： An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas.
摘要翻译：提供具有低介电常数，低泄漏电流和高机械强度特性的半导体器件绝缘膜的目的是经历这些特性的小的时间依赖性变化，并且具有优异的耐水性，并且提供制造以及使用该绝缘膜的半导体器件的制造方法。制造方法包括：将含有载气的混合气体和作为具有环硼氮烷骨架分子的气化材料的原料气体供给到室中的成膜工序，使混合气体处于等离子体状态，偏置于放置在室内的基板上，通过使用环硼氮烷骨架分子作为基本单元进行气相聚合，以在基板上形成绝缘膜; 以及反应促进步骤，在成膜步骤之后，使得施加到基板上的偏压与成膜步骤中的偏压大小不同，供给混合气体，同时逐渐减少气化的原料气体具有环硼烷骨架分子的材料，以主要包含载气的等离子体处理绝缘膜。

4. 发明申请

US20090232987A1 Composition for Chemical Vapor Deposition Film-Formation and Method for Production of Low Dielectric Constant Film 有权
标题翻译：化学气相沉积薄膜形成的组成和低介电常数薄膜的制造方法
公开(公告)号：US20090232987A1
公开(公告)日：2009-09-17
申请号：US12084568
申请日：2006-11-15
申请人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Tetsuya Yamamoto , Yasutaka Nakatani , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Tetsuya Yamamoto , Yasutaka Nakatani , Takuya Kamiyama
IPC分类号： C23C16/00 , C09D5/00
CPC分类号： C23C16/342 , C07F5/02 , C23C16/30 , H01L21/314 , H01L21/318
摘要： The present invention provides a composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group. By using the composition, physical properties such as low dielectric constant property and mechanical strength of the thin film produced from a borazine-ring-containing compound can be improved.
摘要翻译：本发明提供一种化学气相沉积膜形成用组合物，其含有化学式1表示的环硼氮烷化合物，其满足以下条件中的至少一种：组合物中的各卤素原子的含量为100ppb以下，组合物中的每种金属元素为100ppb以下。在化学式1中，R 1可以相同或不同，为氢原子，烷基，链烯基或炔基，其中至少一个为氢原子; R2可以相同或不同，为氢原子，烷基，烯基或炔基，其中至少一个为烷基，烯基或炔基。通过使用该组合物，可以提高由含有环硼氮烷的化合物制造的薄膜的低介电常数性能和机械强度等物理性能。

5. 发明授权

US08846148B2 Composition for chemical vapor deposition film-formation and method for production of low dielectric constant film 有权
标题翻译：用于化学气相沉积膜形成的组合物和用于制备低介电常数膜的方法
公开(公告)号：US08846148B2
公开(公告)日：2014-09-30
申请号：US12084568
申请日：2006-11-15
申请人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Tetsuya Yamamoto , Yasutaka Nakatani , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Naoki Yasuda , Tetsuya Yamamoto , Yasutaka Nakatani , Takuya Kamiyama
IPC分类号： C23C16/00 , C07F5/02 , C23C16/30 , H01L21/314 , C23C16/34 , H01L21/318
CPC分类号： C23C16/342 , C07F5/02 , C23C16/30 , H01L21/314 , H01L21/318
摘要： A composition for chemical vapor deposition film-formation comprising a borazine compound represented by the Chemical Formula 1 satisfying at least one of a condition that content of each halogen atom in the composition is 100 ppb or less or a condition that content of each metal element in the composition is 100 ppb or less. In the Chemical Formula 1, R1 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is hydrogen atom; R2 may be the same or different, and is hydrogen atom, alkyl group, alkenyl group or alkynyl group, and at least one thereof is alkyl group, alkenyl group or alkynyl group.
摘要翻译：一种用于化学气相沉积膜形成的组合物，其包含由化学式1表示的环硼氮烷化合物，其满足组合物中每个卤素原子的含量为100ppb以下的条件中的至少一种或每种金属元素的含量组合物为100ppb以下。在化学式1中，R 1可以相同或不同，为氢原子，烷基，链烯基或炔基，其中至少一个为氢原子; R2可以相同或不同，为氢原子，烷基，烯基或炔基，其中至少一个为烷基，烯基或炔基。

6. 发明申请

US20090090274A1 COMPOSITION FOR LOW DIELECTRIC MATERIAL, LOW DIELECTRIC MATERIAL AND METHOD FOR PRODUCTION THEREOF 失效
标题翻译：低介电材料的组合物，低介电材料及其生产方法
公开(公告)号：US20090090274A1
公开(公告)日：2009-04-09
申请号：US12327117
申请日：2008-12-03
申请人： Teruhiko KUMADA , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
发明人： Teruhiko KUMADA , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： H01B3/18 , H01B3/30 , H01L21/312
CPC分类号： H01L21/02112 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/312 , H01L21/318 , Y10T428/31504
摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
摘要翻译：通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料在200〜600℃下为0.1vol％以下。在下式中，Ra和Rc独立地表示烷基或酰基。 Rb表示氢原子或烷基; n表示1〜5的整数。

7. 发明申请

US20050282015A1 Composition for low dielectric material, low dielectric material and method for production thereof 审中-公开
标题翻译：用于低介电材料，低介电材料的组合物及其制备方法
公开(公告)号：US20050282015A1
公开(公告)日：2005-12-22
申请号：US11000567
申请日：2004-12-01
申请人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： B05D3/12 , B32B9/00 , C09K3/00 , H01L21/312 , H01L21/318
CPC分类号： H01L21/02112 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/312 , H01L21/318 , Y10T428/31504
摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
摘要翻译：通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料在200至600℃下为0.1vol％以下。在下式中，R a和R c独立地表示烷基或酰基; R b表示氢原子或烷基; n表示1〜5的整数。

8. 发明授权

US07824784B2 Composition for low dielectric material, low dielectric material and method for production thereof 失效
标题翻译：用于低介电材料，低介电材料的组合物及其制备方法
公开(公告)号：US07824784B2
公开(公告)日：2010-11-02
申请号：US12327117
申请日：2008-12-03
申请人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
发明人： Teruhiko Kumada , Hideharu Nobutoki , Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： B05D1/00 , B32B9/00
CPC分类号： H01L21/02112 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/312 , H01L21/318 , Y10T428/31504
摘要： A low dielectric material is produced by using a composition including a borazine ring-containing compound and a compound represented by the following formula as a solvent, and/or by annealing a composition comprising a borazine ring-containing compound under atmosphere of oxygen concentration not higher than 0.1 vol % at 200 to 600° C. In the following formula, Ra and Rc independently represent alkyl group or acyl group; Rb represents hydrogen atom or alkyl group; and n represents an integer of 1 to 5.
摘要翻译：通过使用包含含环硼氮环的化合物和下式表示的化合物作为溶剂的组合物和/或通过在氧浓度不高的气氛下退火含有环硼氮烷环化合物的组合物来制备低介电材料在200〜600℃下为0.1vol％以下。在下式中，Ra和Rc独立地表示烷基或酰基。 Rb表示氢原子或烷基; n表示1〜5的整数。

9. 发明申请

US20060178535A1 Method for producing borazine compound 失效
标题翻译：环硼氮烷化合物的制备方法
公开(公告)号：US20060178535A1
公开(公告)日：2006-08-10
申请号：US11346545
申请日：2006-02-02
申请人： Tetsuya Yamamoto , Takuya Kamiyama
发明人： Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： C07F5/02 , C07F9/02
CPC分类号： C07F5/022
摘要： In a synthesis of a borazine compound by a reaction of an alkali boron hydride represented by ABH4 (A represents lithium atom, sodium atom or potassium atom) and an amine salt represented by (RNH3)nX (R represents a hydrogen atom or an alkyl group, X represents a sulfate group or a halogen atom, and n is 1 or 2), or b) diborane (B2H6) and an amine represented by RNH2 (R represents a hydrogen atom or an alkyl group), a water content of raw material is controlled below a prescribed value; mixed solvents containing solvents each having a prescribed boiling point are used as a solvent for reaction; or a raw material is gradually fed to a reactor in a reaction. Or, a borazine compound is subjected to distillation purification treatment and filtration treatment. By such a method, a high purity of borazine compound can be produced safely and in a high yield.
摘要翻译：在由ABH 4（A表示锂原子，钠原子或钾原子）表示的碱金属硼氢化物与（RNH 3）表示的胺盐的反应合成环硼氮烷化合物时， X（R表示氢原子或烷基，X表示硫酸基或卤素原子，n为1或2），或b）乙硼烷（B < （R 2表示氢原子或烷基）表示的胺，原料的水分含量为控制在规定值以下; 使用含有各自具有规定沸点的溶剂的混合溶剂作为反应用溶剂; 或者原料在反应中逐渐进料到反应器中。或者，将环硼氮烷化合物进行蒸馏纯化处理和过滤处理。通过这种方法，可以安全地且高产率地制备高纯度的环硼氮烷化合物。

10. 发明授权

US07786324B2 Method for producing borazine compound 有权
标题翻译：环硼氮烷化合物的制备方法
公开(公告)号：US07786324B2
公开(公告)日：2010-08-31
申请号：US11845322
申请日：2007-08-27
申请人： Tetsuya Yamamoto , Takuya Kamiyama
发明人： Tetsuya Yamamoto , Takuya Kamiyama
IPC分类号： C07F5/02
CPC分类号： C07F5/022
摘要： In a synthesis of a borazine compound by a reaction of an alkali boron hydride represented by ABH4 (A represents lithium atom, sodium atom or potassium atom) and an amine salt represented by (RNH3)nX (R represents a hydrogen atom or an alkyl group, X represents a sulfate group or a halogen atom, and n is 1 or 2), or b) diborane (B2H6) and an amine represented by RNH2 (R represents a hydrogen atom or an alkyl group), a water content of raw material is controlled below a prescribed value; mixed solvents containing solvents each having a prescribed boiling point are used as a solvent for reaction; or a raw material is gradually fed to a reactor in a reaction. Or, a borazine compound is subjected to distillation purification treatment and filtration treatment. By such a method, a high purity of borazine compound can be produced safely and in a high yield.
摘要翻译：在由ABH4（A表示锂原子，钠原子或钾原子）和由（RNH3）nX表示的胺盐（R表示氢原子或烷基）表示的碱金属硼氢化物的反应中合成环硼氮烷化合物，X表示硫酸基或卤素原子，n为1或2），或b）乙硼烷（B2H6）和由RNH2（R表示氢原子或烷基）表示的胺，原料的水分被控制在规定值以下; 使用含有各自具有规定沸点的溶剂的混合溶剂作为反应用溶剂; 或者原料在反应中逐渐进料到反应器中。或者，将环硼氮烷化合物进行蒸馏纯化处理和过滤处理。通过这种方法，可以安全地且高产率地制备高纯度的环硼氮烷化合物。

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