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81. 发明授权

US07767595B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07767595B2
公开(公告)日：2010-08-03
申请号：US11876981
申请日：2007-10-23
申请人： Koichiro Tanaka , Shunpei Yamazaki
发明人： Koichiro Tanaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L21/76802 , B23K26/0613 , B23K26/40 , B23K2103/172 , H01L27/124 , H01L27/1288
摘要： In a manufacturing process of a semiconductor device, a manufacturing technique of a semiconductor device by which a lithography step that uses a photoresist is simplified is provided. A manufacturing cost is reduced and throughput is improved. An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening.
摘要翻译：在半导体器件的制造工艺中，提供了简化使用光致抗蚀剂的光刻步骤的半导体器件的制造技术。制造成本降低，生产量提高。通过依次层叠第一材料层和第二材料层，在基板上形成照射物体。照射物体被被第一材料层吸收的第一激光束和被第二材料层吸收的激光束重叠的第二激光束照射。用激光束的重叠部分照射的部分或全部区域被烧蚀以形成开口。

82. 发明授权

US07736964B2 Semiconductor device, and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07736964B2
公开(公告)日：2010-06-15
申请号：US11274904
申请日：2005-11-16
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

83. 发明授权

US07582162B2 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US07582162B2
公开(公告)日：2009-09-01
申请号：US11600833
申请日：2006-11-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： C30B11/00 , C30B15/26 , H01L21/335
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

84. 发明授权

US07528079B2 Method of changing an energy attenuation factor of a linear light in order to crystallize a semiconductor film 失效
标题翻译：改变线性光的能量衰减因子以使半导体膜结晶的方法
公开(公告)号：US07528079B2
公开(公告)日：2009-05-05
申请号：US10917454
申请日：2004-08-13
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： B23K26/0732 , B23K26/702
摘要： The illumination energy of an excimer laser is measured and adjusted to always effect illumination at constant energy. A laser beam output from an optics is reflected by a mirror, and applied to a sample. A beam profiler is disposed behind the mirror to measure the energy of an illumination laser beam. An energy attenuating device disposed between another mirror and the optics is operated based on the measurement value so that the energy of the laser beam applied to the sample is kept constant.
摘要翻译：对准分子激光器的照明能量进行测量和调整，从而始终以恒定能量照射。从光学器件输出的激光束被反射镜反射并施加到样品上。光束轮廓仪设置在反射镜的后面，以测量照明激光束的能量。基于测量值操作设置在另一反射镜和光学器件之间的能量衰减装置，使得施加到样品的激光束的能量保持恒定。

85. 发明授权

US07524712B2 Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus 有权
标题翻译：半导体装置的制造方法及激光照射方法及激光照射装置
公开(公告)号：US07524712B2
公开(公告)日：2009-04-28
申请号：US10792797
申请日：2004-03-05
申请人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
发明人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
IPC分类号： H01L21/8238
CPC分类号： H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the excimer-like crystal grain region formed over the semiconductor film as small as possible.In the present invention, a fundamental wave having a wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a harmonic emitted from a CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the harmonic with a large amount of energy. Thus it becomes possible to form the long crystal grain region in the semiconductor film while suppressing the formation of the excimer-like crystal grain region.
摘要翻译：当CW激光器用于退火半导体膜时，可以期望具有高特性的器件。另一方面，当在半导体膜上扫描成为椭圆形的光束时，受激准体样晶粒区域的比例变大，这是高集成度的问题。本发明是使半导体膜上形成的准分子状晶粒区域尽可能地小。在本发明中，与从CW激光器发出的谐波同时，将作为照射面的半导体膜附加照射波长约1μm的基波。此外，用大量的能量照射到由谐波照射的区域，以大量的能量照射基波，并且将基波以少量的能量照射到具有大的谐波的照射区域能量的数量。因此，可以在抑制准分子样晶粒区域的形成的同时，在半导体膜中形成长晶粒区域。

86. 发明申请

US20090047771A1 Manufacturing method and manufacturing apparatus of semiconductor device 有权
标题翻译：半导体器件的制造方法和制造装置
公开(公告)号：US20090047771A1
公开(公告)日：2009-02-19
申请号：US12222546
申请日：2008-08-12
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/18 , H01L21/67
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1229 , H01L27/3244 , Y10T29/41
摘要： To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.
摘要翻译：为了提供使用SOI衬底的半导体器件的制造方法，可以提高移动性。使用多个接合基板（半导体基板）形成的多个半导体膜被接合到一个基板（支撑基板）。多个接合基板中的至少一个具有不同于其它接合基板的晶面取向。因此，形成在一个基底基板上的多个半导体膜中的至少一个具有不同于其它半导体膜的晶面取向。根据使用半导体膜形成的半导体元件的极性来确定半导体膜的晶面取向。例如，使用具有面{100}的半导体膜，使用具有面{110}的半导体膜形成空穴为多数载流子的p沟道元件，形成电子为多数载流子的n沟道元件 }。

87. 发明授权

US07485586B2 Laser irradiating apparatus and method of manufacturing semiconductor apparatus 有权
公开(公告)号：US07485586B2
公开(公告)日：2009-02-03
申请号：US11595921
申请日：2006-11-13
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/26
CPC分类号： H01L21/02686 , B23K26/034 , B23K26/123 , B23K26/1435 , B23K26/1436 , B23K26/147 , H01L21/2026 , H01L21/268 , H01L21/3226 , H01L29/66757 , Y10S438/935
摘要： First laser light is irradiated (energy density of 400 to 500 mj/cm2) to a semiconductor film 102 in an atmosphere containing oxygen in order to obtain a semiconductor film 102b having large depressions and projections on the surface. Then, an oxidized film 105a formed by the irradiation of the first laser light is removed. After that, an inert gas with an oxygen density of 10 ppm or below is blown thereto, and, at the same time, second laser light is irradiated thereto (the energy density is higher than that of the irradiation of the first laser light). Thus, the surface of the semiconductor film 102b is flattened, and a semiconductor film 102c having fewer depressions and projections on the surface can be obtained.

88. 发明申请

US20080299744A1 Manufacturing method of semiconductor substrate and semiconductor device 有权
标题翻译：半导体衬底和半导体器件的制造方法
公开(公告)号：US20080299744A1
公开(公告)日：2008-12-04
申请号：US12155053
申请日：2008-05-29
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/18
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： It is an object of the present invention to obtain a large-sized SOI substrate by providing a single-crystal silicon layer over a large-sized glass substrate in a large area. After a plurality of rectangular single-crystal semiconductor substrates each provided with a separation layer are aligned over a dummy substrate and both of the substrates are fixed with a low-temperature coagulant, the plurality of single-crystal semiconductor substrates are bonded to a support substrate; the temperature is raised up to a temperature, at which the low-temperature coagulant does not to have a bonding effect, so as to isolate the dummy substrate and the single-crystal semiconductor substrates; heat treatment is performed to separate part of the single-crystal semiconductor substrates, along a boundary of the respective separation layers; and single-crystal semiconductor layers are provided over the support substrate.
摘要翻译：本发明的目的是通过在大面积的大尺寸玻璃基板上设置单晶硅层来获得大尺寸的SOI衬底。在分别设置有分离层的多个矩形单晶半导体基板之后，在虚拟基板上排列两个基板，并用低温凝结剂固定，将多个单晶半导体基板接合到支撑基板 ; 将温度升高到低温凝结剂不具有接合效果的温度，以隔离虚设基板和单晶半导体基板; 执行热处理以沿着各个分离层的边界分离部分单晶半导体衬底; 并且在支撑衬底上设置单晶半导体层。

89. 发明授权

US07362784B2 Laser irradiation method, laser irradiation apparatus, and semiconductor device 有权
标题翻译：激光照射方法，激光照射装置和半导体装置
公开(公告)号：US07362784B2
公开(公告)日：2008-04-22
申请号：US11504575
申请日：2006-08-15
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01S3/13
CPC分类号： H01L21/02422 , G02B19/0014 , G02B19/0052 , G02B27/0911 , G02B27/0955 , G02B27/0961 , G02B27/0966 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L21/02686 , H01L21/02691 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/78627
摘要： An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.
摘要翻译：本发明的目的是通过改善半导体膜的照射变化来获得具有均匀特性的半导体膜。在用脉冲发射的线性激光束照射时由于扫描而产生照射变化。在用激光照射半导体膜的激光结晶步骤中，使用连续发光准分子激光发射装置作为激光源。例如，在制造有源矩阵型液晶显示装置的方法中，将连续发光准分子激光束照射到被处理为直线形状的半导体膜上，同时沿着与直线方向垂直的方向扫描。因此，通过常规的脉冲激光可以避免照射痕迹，因此可以进行更均匀的结晶。

90. 发明授权

US07304005B2 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US07304005B2
公开(公告)日：2007-12-04
申请号：US10799626
申请日：2004-03-15
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/073
摘要： A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to a semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.
摘要翻译：将连续波振荡的第二激光照射到由具有谐波的脉冲振荡的第一激光熔化的区域中。具体而言，第一激光的波长不比可见光的波长（830nm，优选为780nm以下）。由于半导体膜被第一激光熔化，因此第二激光对半导体膜的吸收系数显着增加，因此第二激光容易被半导体膜吸收。

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