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1. 发明授权

US07916987B2 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：光束均化器，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07916987B2
公开(公告)日：2011-03-29
申请号：US12149969
申请日：2008-05-12
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： G02B6/12 , G02B6/26
CPC分类号： H01L21/02617 , G02B6/001 , G02B6/0048 , G02B6/0055 , G02B6/262 , G02B27/0927 , G02B27/095 , G02B27/0977 , G02B27/0994
摘要： The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.
摘要翻译：本发明提供一种光束均化器，激光照射装置和半导体装置的制造方法，其能够抑制激光束的损失，并且在照射面上不间断地形成具有均匀的能量分布的束斑而不受影响通过激光束的光束参数。在用于使从激光振荡器发射的激光束均匀化的光波导或光管的入口处设置偏转器。偏转器的一对反射面被设置为具有与激光束的光轴的倾斜角，从而扩大了光波导或光管的入射。因此，可以抑制激光束的损失。此外，通过向偏转器设置角度调节机构，可以在光波导的出口处形成具有均匀能量分布的束斑。

2. 发明申请

US20070184590A1 Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus 有权
标题翻译：半导体装置的制造方法及激光照射方法及激光照射装置
公开(公告)号：US20070184590A1
公开(公告)日：2007-08-09
申请号：US10792797
申请日：2004-03-05
申请人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
发明人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： [Object]When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the excimer-like crystal grain region formed over the semiconductor film as small as possible. [Solution]In the present invention, a fundamental wave having a wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a harmonic emitted from a CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the harmonic with a large amount of energy. Thus it becomes possible to form the long crystal grain region in the semiconductor film while suppressing the formation of the excimer-like crystal grain region.
摘要翻译： [对象]当使用CW激光来退火半导体膜时，可以期望具有高特性的器件。另一方面，当在半导体膜上扫描成为椭圆形的光束时，受激准体样晶粒区域的比例变大，这是高集成度的问题。本发明是使半导体膜上形成的准分子状晶粒区域尽可能地小。在本发明中，与从CW激光发出的谐波同时地，将照射表面的半导体膜附加地照射波长约1μm的基波。此外，用大量的能量照射到由谐波照射的区域，以大量的能量照射基波，并且将基波以少量的能量照射到具有大的谐波的照射区域能量的数量。因此，可以在抑制准分子样晶粒区域的形成的同时，在半导体膜中形成长晶粒区域。

3. 发明申请

US20070138151A1 Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20070138151A1
公开(公告)日：2007-06-21
申请号：US11636596
申请日：2006-12-11
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： B23K26/00 , B23K26/06 , H01L21/268
CPC分类号： H01L21/268 , B23K26/066 , B23K26/082 , H01L21/0237 , H01L21/0268 , H01L21/02691
摘要： To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-θ lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with the incidence angle of a laser beam, is used. The slit is disposed between the f-θ lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface by a projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.
摘要翻译：为了提供一种激光照射装置和激光照射方法，其中通过在使用偏转器的光学系统中设置狭缝来减少在激光束照射的区域中形成微晶的区域，并且可以有利地对半导体膜进行激光加工。此外，提供使用上述激光照射装置的半导体制造装置和激光照射方法。在光学系统中，使用具有图像空间远心特性的f-theta透镜或其形状根据激光束的入射角而改变的狭缝。狭缝设置在f-theta透镜和照射面之间，并且通过投影透镜将狭缝开口部分的图像投影到照射表面上。通过上述结构，可以将激光照射均匀地传导到用激光束扫描的整个区域。

4. 发明授权

US08891170B2 Laser irradiation apparatus and manufacturing method of semiconductor device 有权
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US08891170B2
公开(公告)日：2014-11-18
申请号：US13172443
申请日：2011-06-29
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： G02B27/10 , G02B27/09 , B23K26/073 , B23K26/06 , H01L21/20 , B23K26/067 , G02B19/00 , G02B26/10 , H01L27/12
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0676 , B23K26/0738 , G02B19/0014 , G02B19/0052 , G02B26/101 , G02B27/0961 , G02B27/0966 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S359/90
摘要： A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.
摘要翻译：将从激光振荡器发射的激光束偏转的偏转镜，转印透镜，将穿过转印透镜的激光束分割为多个激光束的柱面透镜阵列，以及将形成的激光束叠合的聚光透镜包括柱面透镜阵列。满足以下公式：1 / f = 1 /（a + b）+ 1 / c，当：“a”是激光振荡器的发射开口与偏转镜之间的距离; “b”是偏转镜与转印透镜之间的距离; “c”是转印透镜与柱面透镜阵列的入射面之间的距离; “f”是转印透镜的焦距。

5. 发明授权

US08580700B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08580700B2
公开(公告)日：2013-11-12
申请号：US11702082
申请日：2007-02-05
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： H01L21/00
CPC分类号： B23K26/067 , B23K2101/40 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L51/0017
摘要： To provide a method for manufacturing a semiconductor device using a method in which a desired position is rapidly subjected to laser irradiation while switching laser irradiation patterns. With respect to an organic memory element having a structure in which an organic compound layer is interposed between a pair of conductive layers, data is written to the organic memory element by laser irradiation using a laser irradiation apparatus. Further, a laser beam emitted from a laser oscillator is split by a diffractive optical element into a plurality of laser beams, thereby irradiating a plurality of portions on the organic compound layer with laser beams by single irradiation.
摘要翻译：为了提供使用在切换激光照射图案时期望位置快速进行激光照射的方法制造半导体器件的方法。对于具有有机化合物层插入在一对导电层之间的结构的有机存储元件，通过使用激光照射装置的激光照射将数据写入有机存储元件。此外，从激光振荡器发射的激光束被衍射光学元件分裂成多个激光束，从而通过单次照射用激光束照射有机化合物层上的多个部分。

6. 发明授权

US08512917B2 Photomask 有权
标题翻译：光掩模
公开(公告)号：US08512917B2
公开(公告)日：2013-08-20
申请号：US13093974
申请日：2011-04-26
申请人： Hideaki Shishido , Yuto Yakubo , Hirotada Oishi
发明人： Hideaki Shishido , Yuto Yakubo , Hirotada Oishi
IPC分类号： G03F1/26 , G03F1/36
CPC分类号： G03F1/36
摘要： A photomask is provided, with which the roundness of a corner portion of a resist mask can be reduced in a photolithography step. Further, a method for manufacturing a semiconductor device with less variation is provided. A photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and (k+1) sides (k is a natural number of 3 or more) form k obtuse angles in the auxiliary pattern. Alternatively, a photomask includes an auxiliary pattern at a corner portion of a light-blocking portion, and the auxiliary pattern includes a zigzag curve.
摘要翻译：提供了一种光掩模，利用该光掩模可以在光刻步骤中减小抗蚀剂掩模的角部的圆度。此外，提供了一种具有较小变化的半导体器件的制造方法。光掩模在遮光部分的角部包括辅助图案，并且辅助图案中的（k + 1）边（k是3以上的自然数）形成k个钝角。或者，光掩模在遮光部分的角部包括辅助图案，并且辅助图案包括锯齿形曲线。

7. 发明授权

US08455790B2 Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device 有权
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US08455790B2
公开(公告)日：2013-06-04
申请号：US11636596
申请日：2006-12-11
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： H01L21/428 , H01L21/426
CPC分类号： H01L21/268 , B23K26/066 , B23K26/082 , H01L21/0237 , H01L21/0268 , H01L21/02691
摘要： To provide a laser irradiation apparatus and a laser irradiation method in which a region formed with microcrystals in a region irradiated with laser beams is decreased by disposing a slit in an optical system using a deflector, and laser processing can be favorably conducted to a semiconductor film. Further to provide a semiconductor manufacturing apparatus using the above-described laser irradiation apparatus and the laser irradiation method. In the optical system, an f-θ lens having an image space telecentric characteristic or a slit the shape of which is changed in accordance with the incidence angle of a laser beam, is used. The slit is disposed between the f-θ lens and an irradiation surface, and an image at a slit opening portion is projected onto the irradiation surface by a projection lens. By the above-described structure, laser irradiation can be uniformly conducted to a whole region scanned with laser beams.
摘要翻译：为了提供一种激光照射装置和激光照射方法，其中通过在使用偏转器的光学系统中设置狭缝来减少在激光束照射的区域中形成微晶的区域，并且可以有利地对半导体膜进行激光加工。此外，提供使用上述激光照射装置的半导体制造装置和激光照射方法。在光学系统中，使用具有图像空间远心特性的f-theta透镜或其形状根据激光束的入射角而改变的狭缝。狭缝设置在f-theta透镜和照射面之间，并且通过投影透镜将狭缝开口部分的图像投影到照射表面上。通过上述结构，可以将激光照射均匀地传导到用激光束扫描的整个区域。

8. 发明申请

US20110255172A1 LASER IRRADIATION APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：激光雷射装置和半导体器件的制造方法
公开(公告)号：US20110255172A1
公开(公告)日：2011-10-20
申请号：US13172443
申请日：2011-06-29
申请人： Koichiro TANAKA , Hirotada OISHI
发明人： Koichiro TANAKA , Hirotada OISHI
IPC分类号： G02B27/12 , H01L21/26
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0676 , B23K26/0738 , G02B19/0014 , G02B19/0052 , G02B26/101 , G02B27/0961 , G02B27/0966 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S359/90
摘要： A deflecting mirror which deflects a laser beam emitted from a laser oscillator, a transfer lens, a cylindrical lens array which divides the laser beam having passed through the transfer lens into a plurality of laser beams, and a condensing lens which superposes the laser beams formed in the cylindrical lens array are included. The following formula is satisfied: 1/f=1/(a+b)+1/c, when: “a” is a distance between an emission opening of the laser oscillator and the deflecting mirror; “b” is a distance between the deflecting mirror and the transfer lens; “c” is a distance between the transfer lens and an incidence plane of the cylindrical lens array; and “f” is a focal length of the transfer lens.
摘要翻译：将从激光振荡器发射的激光束偏转的偏转镜，转印透镜，将穿过转印透镜的激光束分割为多个激光束的柱面透镜阵列，以及将形成的激光束叠合的聚光透镜包括柱面透镜阵列。满足以下公式：1 / f = 1 /（a + b）+ 1 / c，当：“a”是激光振荡器的发射开口与偏转镜之间的距离; “b”是偏转镜与转印透镜之间的距离; “c”是转印透镜与柱面透镜阵列的入射面之间的距离; “f”是转印透镜的焦距。

9. 发明申请

US20100301026A1 Manufacturing Method of Semiconductor Device and Laser Processing Apparatus 有权
标题翻译：半导体器件和激光加工设备的制造方法
公开(公告)号：US20100301026A1
公开(公告)日：2010-12-02
申请号：US12793229
申请日：2010-06-03
申请人： Hirotada Oishi , Koichiro Tanaka
发明人： Hirotada Oishi , Koichiro Tanaka
IPC分类号： B23K26/00
CPC分类号： H01L21/31105 , B23K26/0613 , B23K26/0676 , B23K26/382 , B23K26/389 , B23K26/40 , B23K2101/40 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/172 , B23K2103/26 , B23K2103/50 , B23K2103/52 , G02F1/133707 , G02F1/13452 , G02F1/13454 , G02F1/136227 , G02F1/1368 , G02F1/167 , G02F2001/133622 , G02F2001/136231 , H01L21/02675 , H01L21/31127 , H01L27/124
摘要： In a manufacturing process of a semiconductor device, a manufacturing technique and a manufacturing apparatus of a semiconductor device which simplify a lithography step using a photoresist is provided, so that the manufacturing cost is reduced, and the throughput is improved. An irradiated object, in which a light absorbing layer and an insulating layer are stacked over a substrate, is irradiated with a multi-mode laser beam and a single-mode laser beam so that both the laser beams overlap with each other, and an opening is formed by ablation in part of the irradiated object the irradiation of which is performed so that both the laser beams overlap with each other.
摘要翻译：在半导体器件的制造工艺中，提供了使用光刻胶简化光刻步骤的半导体器件的制造技术和制造装置，从而降低了制造成本，提高了生产量。用多模激光束和单模激光束照射在基板上堆积光吸收层和绝缘层的被照射物体，使得激光束彼此重叠，并且开口是通过在被照射物体的一部分进行烧蚀而形成的，其照射进行为使得激光束彼此重叠。

10. 发明申请

US20100048036A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND LASER IRRADIATION APPARATUS 有权
标题翻译：制造半导体器件和激光辐照装置的方法
公开(公告)号：US20100048036A1
公开(公告)日：2010-02-25
申请号：US12611990
申请日：2009-11-04
申请人： Koichiro TANAKA , Hirotada OISHI
发明人： Koichiro TANAKA , Hirotada OISHI
IPC分类号： H01L21/268
CPC分类号： H01L21/02686 , B23K26/0006 , B23K26/0608 , B23K26/0624 , B23K26/067 , B23K26/0738 , B23K2101/40 , B23K2103/50 , H01L21/02678 , H01L21/2026 , H01L27/1266 , H01L27/1285 , H01L27/3244
摘要： It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.
摘要翻译：本发明的目的是使用紧凑型激光照射装置来实现无光学干涉的连续晶体生长。将一兆赫兹的激光束分离并组合以使半导体膜结晶。在这个时间点上，在分束之间提供光路差以减少光学干涉。光程差被设定为具有等于兆赫兹激光束的脉冲宽度的长度，或者多于等于脉冲重复间隔的长度; 因此，能够以非常短的光程差来抑制光学干涉。因此，可以连续有效地施加激光束而不会使能量劣化。

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