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1. 发明申请

US20070184590A1 Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus 有权
标题翻译：半导体装置的制造方法及激光照射方法及激光照射装置
公开(公告)号：US20070184590A1
公开(公告)日：2007-08-09
申请号：US10792797
申请日：2004-03-05
申请人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
发明人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： [Object]When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the excimer-like crystal grain region formed over the semiconductor film as small as possible. [Solution]In the present invention, a fundamental wave having a wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a harmonic emitted from a CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the harmonic with a large amount of energy. Thus it becomes possible to form the long crystal grain region in the semiconductor film while suppressing the formation of the excimer-like crystal grain region.
摘要翻译： [对象]当使用CW激光来退火半导体膜时，可以期望具有高特性的器件。另一方面，当在半导体膜上扫描成为椭圆形的光束时，受激准体样晶粒区域的比例变大，这是高集成度的问题。本发明是使半导体膜上形成的准分子状晶粒区域尽可能地小。在本发明中，与从CW激光发出的谐波同时地，将照射表面的半导体膜附加地照射波长约1μm的基波。此外，用大量的能量照射到由谐波照射的区域，以大量的能量照射基波，并且将基波以少量的能量照射到具有大的谐波的照射区域能量的数量。因此，可以在抑制准分子样晶粒区域的形成的同时，在半导体膜中形成长晶粒区域。

2. 发明申请

US20080227232A1 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US20080227232A1
公开(公告)日：2008-09-18
申请号：US11880948
申请日：2007-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
IPC分类号： H01L21/768 , H01L33/00
CPC分类号： G02F1/136286 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1248 , H01L51/5284 , H01L51/529 , H01L51/56 , H01L2227/323
摘要： An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供可以通过提高材料的使用效率和简化制造工艺来制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，去除绝缘层中的照射区域，以在绝缘层中形成开口并且在开口中形成导电膜以与光吸收层接触。导电膜形成在开口中以与被曝光的光吸收层接触，使得光吸收层和导电层可以与插入其间的绝缘层电连接。

3. 发明授权

US07807483B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07807483B2
公开(公告)日：2010-10-05
申请号：US11880948
申请日：2007-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
IPC分类号： H01L21/00
CPC分类号： G02F1/136286 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1248 , H01L51/5284 , H01L51/529 , H01L51/56 , H01L2227/323
摘要： An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供可以通过提高材料的使用效率和简化制造工艺来制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，去除绝缘层中的照射区域，以在绝缘层中形成开口并且在开口中形成导电膜以与光吸收层接触。导电膜形成在开口中以与被曝光的光吸收层接触，使得光吸收层和导电层可以与插入其间的绝缘层电连接。

4. 发明授权

US07524712B2 Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus 有权
标题翻译：半导体装置的制造方法及激光照射方法及激光照射装置
公开(公告)号：US07524712B2
公开(公告)日：2009-04-28
申请号：US10792797
申请日：2004-03-05
申请人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
发明人： Koichiro Tanaka , Hirotada Oishi , Shunpei Yamazaki
IPC分类号： H01L21/8238
CPC分类号： H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： When the CW laser is employed for annealing the semiconductor film, a device having a high characteristic can be expected. On the other hand, when the beam shaped to be elliptical is scanned on the semiconductor film, a proportion of excimer-like crystal grain region becomes large and this is a problem in point of high integration. The present invention is to make the excimer-like crystal grain region formed over the semiconductor film as small as possible.In the present invention, a fundamental wave having a wavelength of approximately 1 μm is irradiated supplementarily to the semiconductor film, which is the irradiated surface, simultaneously with a harmonic emitted from a CW laser. In addition, the fundamental wave is irradiated with a large amount of energy to a region irradiated by the harmonic with a small amount of energy, and the fundamental wave is irradiated with a small amount of energy to a region irradiated by the harmonic with a large amount of energy. Thus it becomes possible to form the long crystal grain region in the semiconductor film while suppressing the formation of the excimer-like crystal grain region.
摘要翻译：当CW激光器用于退火半导体膜时，可以期望具有高特性的器件。另一方面，当在半导体膜上扫描成为椭圆形的光束时，受激准体样晶粒区域的比例变大，这是高集成度的问题。本发明是使半导体膜上形成的准分子状晶粒区域尽可能地小。在本发明中，与从CW激光器发出的谐波同时，将作为照射面的半导体膜附加照射波长约1μm的基波。此外，用大量的能量照射到由谐波照射的区域，以大量的能量照射基波，并且将基波以少量的能量照射到具有大的谐波的照射区域能量的数量。因此，可以在抑制准分子样晶粒区域的形成的同时，在半导体膜中形成长晶粒区域。

5. 发明授权

US08802185B2 Deposition method and method for manufacturing light-emitting device 有权
标题翻译：沉积方法和制造发光器件的方法
公开(公告)号：US08802185B2
公开(公告)日：2014-08-12
申请号：US12472562
申请日：2009-05-27
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
IPC分类号： B05D5/12
CPC分类号： H01L51/0005 , H01L27/3211 , H01L51/56
摘要： An object is to provide a deposition method for smoothly obtaining desired pattern shapes of material layers and a method for manufacturing a light-emitting device while throughput is improved when a plurality of different material layers is stacked on a substrate. A material layer is selectively formed in advance in a position overlapped with a light absorption layer over a first substrate by pump feeding. Three kinds of light-emitting layers are deposited on one deposition substrate. This first substrate and a second substrate that is to be a deposition target substrate are arranged to face each other, and the light absorption layer is heated by being irradiated with light, whereby a film is deposited on the second substrate. Three kinds of light-emitting layers can be deposited with positional accuracy by performing only one position alignment before light irradiation.
摘要翻译：本发明的目的是提供一种用于平滑地获得材料层的期望图案形状的沉积方法，以及当多个不同的材料层堆叠在基底上时，提高生产能力的方法。预先在与第一基板上的光吸收层重叠的位置通过泵送来选择性地形成材料层。在一个沉积衬底上沉积三种发光层。该第一基板和作为沉积靶基板的第二基板被布置为彼此面对，并且通过照射光来加热光吸收层，由此在第二基板上沉积膜。可以通过在光照射之前仅进行一个位置对准来以位置精度沉积三种发光层。

6. 发明申请

US20120153333A1 Light-Emitting Device and Lighting Device 有权
标题翻译：发光装置和照明装置
公开(公告)号：US20120153333A1
公开(公告)日：2012-06-21
申请号：US13327047
申请日：2011-12-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L33/58 , H01L33/36
CPC分类号： H01L51/5246 , H01L51/50 , H01L51/5212 , H01L51/5237 , H01L51/524 , H01L51/525 , H01L51/5253 , H01L51/5256 , H01L51/5259 , H01L51/5275 , H01L2251/50 , H01L2251/53 , H01L2251/5307 , H01L2251/5323 , H01L2251/5338 , H01L2251/5361
摘要： A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μ and less than or equal to 100 μ. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.
摘要翻译：提供了包括有机EL元件并且重量轻的高度可靠的发光装置。发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。第一有机树脂层和第一玻璃层各具有透射可见光的性质。第一玻璃层的厚度和第二玻璃层的厚度独立地大于或等于25μ并且小于或等于100μ。发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

7. 发明申请

US20120126277A1 Light-Emitting Element, Manufacturing Method Thereof, and Lighting Device 有权
标题翻译：发光元件，其制造方法和照明装置
公开(公告)号：US20120126277A1
公开(公告)日：2012-05-24
申请号：US13303590
申请日：2011-11-23
申请人： Koichiro Tanaka , Hisao Ikeda , Shunpei Yamazaki
发明人： Koichiro Tanaka , Hisao Ikeda , Shunpei Yamazaki
IPC分类号： H01L33/02 , H01L33/40
CPC分类号： H01L51/50 , H01L2251/5361 , H01L2251/5392 , H01L2251/568
摘要： A light-emitting element includes a conductive layer functioning as a first electrode, an electroluminescent layer, and a conductive layer functioning as a second electrode, and further includes an insulating material filling a defect portion in the electroluminescent layer so that the defect portion is sealed. In the light-emitting element, the conductive layer functioning as a second electrode overlaps with the conductive layer functioning as a first electrode with the electroluminescent layer and the insulating material interposed therebetween and is in contact with a top surface of the electroluminescent layer.
摘要翻译：发光元件包括用作第一电极的导电层，电致发光层和用作第二电极的导电层，并且还包括填充电致发光层中的缺陷部分以使缺陷部分被密封的绝缘材料。在发光元件中，用作第二电极的导电层与用作第一电极的导电层重叠，其中电致发光层和绝缘材料介于其间并且与电致发光层的顶表面接触。

8. 发明授权

US08093593B2 Semiconductor device having multichannel transistor 有权
标题翻译：具有多通道晶体管的半导体器件
公开(公告)号：US08093593B2
公开(公告)日：2012-01-10
申请号：US11516616
申请日：2006-09-07
申请人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
发明人： Chiho Kokubo , Aiko Shiga , Shunpei Yamazaki , Hidekazu Miyairi , Koji Dairiki , Koichiro Tanaka
IPC分类号： H01L29/10
CPC分类号： H01L29/78675 , H01L27/1214 , H01L27/1222 , H01L27/127 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above region so as to crystallize the first shape of semiconductor region. A continuous wave laser beam condensed in one or plural lines is used for the laser beam. The first shape of semiconductor region is etched to form a second shape of semiconductor region in which a channel forming region and a source and drain region are formed. The second shape of semiconductor region is disposed so that a channel forming range would be formed on respective crystal regions extending from the plurality of convex end portions. A semiconductor region adjacent to the channel forming region is eliminated.
摘要翻译：首先形成在其一侧具有多个尖锐的凸顶部的半导体区域的第一形状，并且使用连续波激光束进行来自上述区域的辐射，以使半导体区域的第一形状结晶化。在一条或多条线路中聚光的连续波激光束用于激光束。蚀刻半导体区域的第一形状以形成其中形成沟道形成区域和源极和漏极区域的半导体区域的第二形状。半导体区域的第二形状被设置成在从多个凸起端部延伸的各个晶体区域上形成沟道形成范围。消除了与沟道形成区域相邻的半导体区域。

9. 发明授权

US08044372B2 Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
标题翻译：激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备
公开(公告)号：US08044372B2
公开(公告)日：2011-10-25
申请号：US11812557
申请日：2007-06-20
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hidekazu Miyairi , Aiko Shiga , Akihisa Shimomura , Mai Akiba
IPC分类号： G21G1/00
CPC分类号： H01L21/02683 , B23K26/0823 , B23K2101/40 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , Y10S438/973
摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.
摘要翻译：提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动。

10. 发明授权

US07981733B2 Laser irradiation method, laser irradiation apparatus, and semiconductor device 有权
标题翻译：激光照射方法，激光照射装置和半导体装置
公开(公告)号：US07981733B2
公开(公告)日：2011-07-19
申请号：US12106643
申请日：2008-04-21
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/02422 , G02B19/0014 , G02B19/0052 , G02B27/0911 , G02B27/0955 , G02B27/0961 , G02B27/0966 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02675 , H01L21/02686 , H01L21/02691 , H01L27/1277 , H01L27/1285 , H01L27/1296 , H01L29/78627
摘要： An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.
摘要翻译：本发明的目的是通过改善半导体膜的照射变化来获得具有均匀特性的半导体膜。在用脉冲发射的线性激光束照射时由于扫描而产生照射变化。在用激光照射半导体膜的激光结晶步骤中，使用连续发光准分子激光发射装置作为激光源。例如，在制造有源矩阵型液晶显示装置的方法中，将连续发光准分子激光束照射到被处理为直线形状的半导体膜上，同时沿着与直线方向垂直的方向扫描。因此，通过常规的脉冲激光可以避免照射痕迹，因此可以进行更均匀的结晶。

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