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81. 发明授权

US09076642B2 High-Throughput batch porous silicon manufacturing equipment design and processing methods 有权
标题翻译：高产量批量多孔硅制造设备的设计和加工方法
公开(公告)号：US09076642B2
公开(公告)日：2015-07-07
申请号：US13244466
申请日：2011-09-24
申请人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
发明人： Takao Yonehara , Subramanian Tamilmani , Karl-Josef Kramer , Jay Ashjaee , Mehrdad M. Moslehi , Yasuyoshi Miyaji , Noriyuki Hayashi , Takamitsu Inahara
IPC分类号： H01L21/02 , C25D11/32 , C25D11/00 , H01L21/67 , H01L31/18
CPC分类号： C25D11/005 , C25D11/32 , C25F3/12 , C25F7/02 , H01L21/0203 , H01L21/67086 , H01L21/67781 , H01L21/68721 , H01L21/68771 , H01L21/68785 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得可以高产率地制造多孔半导体层（由诸如多孔硅的单层或多层多孔半导体制成，包括单孔隙率或多孔隙率层）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

82. 发明授权

US08647923B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08647923B2
公开(公告)日：2014-02-11
申请号：US13262915
申请日：2010-04-02
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuo Kawase , Kenji Nakagawa
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuo Kawase , Kenji Nakagawa
IPC分类号： H01L21/00
CPC分类号： H01L25/0657 , H01L21/563 , H01L21/6835 , H01L21/78 , H01L24/12 , H01L24/16 , H01L24/90 , H01L24/94 , H01L24/97 , H01L25/50 , H01L2221/68318 , H01L2221/68363 , H01L2221/68377 , H01L2224/0554 , H01L2224/05573 , H01L2224/13025 , H01L2224/16145 , H01L2224/32145 , H01L2224/73203 , H01L2224/90 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/30105 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method of manufacturing a semiconductor device includes the steps of forming a plurality of first integrated circuits on the surface side of a first semiconductor substrate; forming a plurality of second integrated circuits in a semiconductor layer that is formed on a release layer provided on a second semiconductor substrate; bonding the two semiconductor substrates so that electrically bonding portions are bonded to each other to form a bonded structure; separating the second semiconductor substrate from the bonded structure at the release layer to transfer, to the first semiconductor substrate, the semiconductor layer in which the plurality of second integrated circuits are formed; and dicing the first semiconductor substrate to obtain stacked chips each including the first integrated circuit and the second integrated circuit.
摘要翻译：一种制造半导体器件的方法包括在第一半导体衬底的表面侧形成多个第一集成电路的步骤; 在形成在设置在第二半导体衬底上的剥离层上的半导体层中形成多个第二集成电路; 键合两个半导体基板，使得电接合部分彼此结合以形成接合结构; 在所述剥离层处将所述第二半导体衬底与所述接合结构分离，以将形成有所述多个第二集成电路的所述半导体层转移到所述第一半导体衬底; 以及切割第一半导体衬底以获得每个包括第一集成电路和第二集成电路的堆叠芯片。

83. 发明授权

US08420501B2 Transfer method of functional region, LED array, LED printer head, and LED printer 有权
标题翻译：功能区转移方式，LED阵列，LED打印头，LED打印机
公开(公告)号：US08420501B2
公开(公告)日：2013-04-16
申请号：US12611739
申请日：2009-11-03
申请人： Takao Yonehara , Yasuyoshi Takai
发明人： Takao Yonehara , Yasuyoshi Takai
IPC分类号： H01L21/52
CPC分类号： H01L33/0079 , B41J2/45 , H01L21/6835 , H01L25/167 , H01L27/153 , H01L2221/68322 , H01L2221/68368 , H01L2924/0002 , H01L2924/00
摘要： A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer.
摘要翻译：一种方法包括：在第一基板上的第一功能区域或第二基板上的区域上布置第一接合层，通过第一接合层将第一功能区域与第二基板接合，使第一释放层进行第一处理在第一释放层处将第一基板与第一功能区域分开，在第一基板上的第二功能区域或第三基板上的区域上布置第二接合层，将第二功能区域结合到第二或第三基板通过第二接合层，并且使第二剥离层进行第二工序，以将第一衬底与第二剥离层处的第二功能区分离。

84. 发明授权

US08415230B2 Method for transferring functional regions, LED array, LED printer head, and LED printer 有权
标题翻译：传输功能区域的方法，LED阵列，LED打印机头和LED打印机
公开(公告)号：US08415230B2
公开(公告)日：2013-04-09
申请号：US13254024
申请日：2010-03-01
申请人： Takao Yonehara , Yasuyoshi Takai
发明人： Takao Yonehara , Yasuyoshi Takai
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： B41J2/45 , H01L21/6835 , H01L24/83 , H01L33/0079 , H01L2221/68359 , H01L2924/14 , H01L2924/3025 , H01L2924/00
摘要： Provided is a method for transferring, onto a second substrate, at least one of functional regions arranged and joined to a first separation layer that is disposed on a first substrate and that becomes separable by a treatment, in which regions on the second substrate where the functional regions are to be transferred have a second separation layer that becomes separable by a treatment. The method includes a step of joining the first substrate to the second substrate by bonding such that the functional regions contact the second separation layer; a step of separating the functional regions from the first substrate at the first separation layer; and a step of, before or after the step of separation, forming separation grooves penetrating through the second substrate and the second separation layer from a surface of the second substrate, the surface being opposite to a surface having the second separation layer thereon.
摘要翻译：提供了一种用于将布置并连接到第一分离层的功能区域中的至少一个转移到第二基板上的方法，第一分离层设置在第一基板上并且通过处理可分离，其中第二基板上的区域要转移功能区域具有可通过处理分离的第二分离层。该方法包括通过接合将第一基板接合到第二基板的步骤，使得功能区域接触第二分离层; 在第一分离层处分离功能区域与第一基板的步骤; 以及在分离步骤之前或之后的步骤，从第二基板的表面形成穿过第二基板和第二分离层的分离槽，该表面与其上具有第二分离层的表面相对。

85. 发明授权

US08237761B2 Semiconductor member, semiconductor article manufacturing method, and LED array using the manufacturing method 有权
标题翻译：半导体元件，半导体制品制造方法和使用该制造方法的LED阵列
公开(公告)号：US08237761B2
公开(公告)日：2012-08-07
申请号：US12442902
申请日：2007-10-25
申请人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
发明人： Takao Yonehara , Kenji Yamagata , Yoshinobu Sekiguchi , Kojiro Nishi
IPC分类号： B41J2/45 , H01L21/30 , H01L21/46
CPC分类号： H01L27/153 , B41J2/45 , H01L21/7806 , H01L21/784 , H01L33/0079 , H01L33/0095 , H01L2924/0002 , H01L2924/00
摘要： A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (1010), a compound semiconductor multilayer film (1020), an insulating film (2010), and a semiconductor substrate (2000) on a compound semiconductor substrate (1000), and having a first groove (2005) which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove (1025) which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.
摘要翻译：提供了一种新颖的半导体制品制造方法等。制造具有形成在半导体衬底上的化合物半导体多层膜的半导体产品的方法包括：制备包括蚀刻牺牲层（1010），化合物半导体多层膜（1020），绝缘膜（2010）和半导体衬底（2000），并且具有通过半导体衬底和绝缘膜的第一沟槽（2005）以及设置在该化合物半导体衬底（1000）中的第二沟槽的半导体衬底沟槽（1025）半导体多层膜，以便连接到第一沟槽，并使蚀刻剂通过第一沟槽和第二沟槽与蚀刻牺牲层接触，然后蚀刻蚀刻牺牲层，以将化合物半导体衬底与构件分离。

86. 发明申请

US20120171866A1 SUBSTRATE STRUCTURE INCLUDING FUNCTIONAL REGION AND METHOD FOR TRANSFERRING FUNCTIONAL REGION 有权
标题翻译：基层结构，包括功能区域和转移功能区域的方法
公开(公告)号：US20120171866A1
公开(公告)日：2012-07-05
申请号：US13395202
申请日：2010-09-14
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/3105 , B32B3/00 , G03F7/11 , G03F7/20 , G03F7/004
CPC分类号： B41J2/45 , H01L21/187 , H01L33/0079 , H01L2924/00013 , H01L2924/01057 , H01L2924/3025 , Y10T428/24802 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599
摘要： According to a method for transferring a functional region, at least part of functional regions on separation layers arranged on a first substrate is transferred onto a second substrate, the separation layers being capable of being brought into a separable state by treatment. In a first bonding step, the first substrate is bonded to the second substrate with a dry film resist arranged between the second substrate and the at least part of the functional regions above the first substrate. In an exposure step, at least part of the dry film resist is exposed. In a patterning step, the exposed dry film resist is patterned.
摘要翻译：根据用于转移功能区域的方法，将布置在第一基板上的分离层上的功能区域的至少一部分转移到第二基板上，分离层能够通过处理进入分离状态。在第一接合步骤中，第一衬底与布置在第二衬底和第一衬底上的功能区域的至少部分之间的干膜抗蚀剂结合到第二衬底。在曝光步骤中，暴露干膜抗蚀剂的至少一部分。在图案化步骤中，将曝光的干膜抗蚀剂图案化。

87. 发明授权

US08035668B2 Exposure apparatus and device manufacturing method 有权
标题翻译：曝光装置和装置制造方法
公开(公告)号：US08035668B2
公开(公告)日：2011-10-11
申请号：US11336754
申请日：2006-01-19
申请人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
发明人： Mitsuro Sugita , Kazuaki Ohmi , Takao Yonehara , Toshihiko Tsuji , Takaaki Terashi , Tohru Kohda , Shinji Tsutsui
IPC分类号： G03G13/04
CPC分类号： G03F7/70275
摘要： An exposure apparatus which forms a pattern on an object. The apparatus includes an exposure head structure in which a plurality of elemental exposure units are arrayed, each elemental exposure unit including (i) at least one light source for emitting exposure light and (ii) an optical element which forms an image of the at least one light source on the object, for exposing the object. Positions of the images of the at least one light source in a direction perpendicular to a surface of the object include plural positions different from each other. A sensor detects a position of the surface of the object and produces a detection result. A controller receives the detection result and controls the exposure head structure such that a pattern is formed on the object by the exposure is selected to expose the object based on the detection result by the sensor.
摘要翻译：在物体上形成图案的曝光装置。该装置包括其中排列多个元素曝光单元的曝光头结构，每个元素曝光单元包括：（i）至少一个用于发射曝光光的光源;以及（ii）至少形成至少一个图像的光学元件对象上的一个光源，用于暴露对象。至少一个光源的图像在垂直于物体表面的方向上的位置包括彼此不同的多个位置。传感器检测物体表面的位置并产生检测结果。控制器接收检测结果并控制曝光头结构，使得通过曝光在物体上形成图案被选择以基于传感器的检测结果来曝光物体。

88. 发明授权

US07919381B2 Germanium substrate-type materials and approach therefor 有权
标题翻译：锗衬底型材料及其方法
公开(公告)号：US07919381B2
公开(公告)日：2011-04-05
申请号：US12719796
申请日：2010-03-08
申请人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
发明人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
IPC分类号： H01L21/76
CPC分类号： H01L29/518 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/2807 , H01L21/28255 , H01L29/16 , H01L29/165 , H01L29/513 , H01L29/66575 , H01L29/94
摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
摘要翻译：锗电路型结构方便。在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

89. 发明申请

US20110030610A1 HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：高效多孔半导体制造设备
公开(公告)号：US20110030610A1
公开(公告)日：2011-02-10
申请号：US12774667
申请日：2010-05-05
申请人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
发明人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
IPC分类号： C25F3/12 , C25F7/00 , C30B19/08 , C30B23/06 , C30B25/10
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

90. 发明授权

US07786495B2 Light-emitting element array and image forming apparatus 有权
标题翻译：发光元件阵列和图像形成装置
公开(公告)号：US07786495B2
公开(公告)日：2010-08-31
申请号：US12259420
申请日：2008-10-28
申请人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
发明人： Tetsuya Takeuchi , Makoto Koto , Kenji Yamagata , Yoshinobu Sekiguchi , Takao Yonehara
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , B41J2/45
摘要： A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks.
摘要翻译：可以在不分离金属反射层的情况下制造发光元件阵列。发光元件阵列包括设置在基板上的多个发光元件部，相邻的发光元件部之间的空间的至少一个空间彼此电分离，其中金属反射层设置在基板和多个发光元件部分之下，并且在多个发光元件部分和金属反射层之间设置用于在发光元件部分之间进行电气分离的电阻层。多个发光元件部分被分成多个块。每个块包括多个发光部分。发光部之间的电气分离可以在相邻的和不同的块之间的相邻的发光元件部分之间进行电分离。

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