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81. 发明授权

US07857462B2 Projection optical unit, projection-type image displaying apparatus and projection-type image displaying system 有权
标题翻译：投影光学单元，投影型图像显示装置和投影型图像显示系统
公开(公告)号：US07857462B2
公开(公告)日：2010-12-28
申请号：US12838915
申请日：2010-07-19
申请人： Takanori Hisada , Koji Hirata , Masahiko Yatsu
发明人： Takanori Hisada , Koji Hirata , Masahiko Yatsu
IPC分类号： G03B21/14 , G03B21/28
CPC分类号： G03B21/28
摘要： A projection optical unit for a projection display apparatus, which displays an image upon a projection surface, obliquely, includes a front lens group disposed in a direction from an image display element to a projection surface, a rear lens group, and a reflection mirror formed so that a curvature of a portion for reflecting a light beam incident upon a lower end portion of the projection surface is larger than a curvature of a portion for reflecting a light beam incident upon an upper end of the projection surface. An optical axis of the front lens group and the rear lens group is more inclined with respect to a direction of the portion of the reflection mirror for reflecting the light beam incident upon the lower end portion of the projection surface than a normal line direction of the image display element.
摘要翻译：一种用于投影显示设备的投影光学单元，其在投影表面上倾斜地显示图像，包括沿从图像显示元件到投影表面的方向设置的前透镜组，后透镜组和形成的反射镜使得入射到投影表面的下端部分上的反射光束的部分的曲率大于用于反射入射在投影表面的上端的光束的部分的曲率。前透镜组和后透镜组的光轴相对于反射镜的部分的方向更倾斜，用于反射入射在投影表面的下端部上的光束，而不是垂直方向图像显示元件。

82. 发明授权

US07708833B2 Crystal growing apparatus 有权
标题翻译：水晶生长装置
公开(公告)号：US07708833B2
公开(公告)日：2010-05-04
申请号：US12073904
申请日：2008-03-11
申请人： Shiro Yamazaki , Koji Hirata , Takayuki Sato , Seiji Nagai , Katsuhiro Imai , Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Koji Hirata , Takayuki Sato , Seiji Nagai , Katsuhiro Imai , Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.
摘要翻译：本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置用于控制填充其内部空间的氩（Ar）气体的状态。因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na），和管道。

83. 发明授权

US07701639B2 Projection type image display apparatus 有权
标题翻译：投影型图像显示装置
公开(公告)号：US07701639B2
公开(公告)日：2010-04-20
申请号：US11870646
申请日：2007-10-11
申请人： Takanori Hisada , Koji Hirata , Masahiko Yatsu
发明人： Takanori Hisada , Koji Hirata , Masahiko Yatsu
IPC分类号： G02B3/00 , G02B9/00 , G02B13/18 , G02B3/02
CPC分类号： G02B13/16 , G02B13/18 , G02B27/0068
摘要： A projection-type display apparatus, comprises a front lens group having a plural number of lenses, each having rotationally symmetric surface configuration, a rear lens group, being disposed in rear of the front lens group, including a refractive lens for diverting a light and having a rotationally symmetric surface configuration, and a plural number of free curved surface lenses, each having a rotationally asymmetric free curved surface configuration, and a reflection mirror, being disposed in rear of the rear lens group, having a convex configuration into a direction of reflection of light and a rotationally asymmetric free curved surface configuration, at least in a part thereof.
摘要翻译：一种投影式显示装置，包括具有旋转对称表面构造的多个透镜的前透镜组，设置在前透镜组后部的后透镜组，包括用于转向光的折射透镜和具有旋转对称表面构造的多个自由曲面透镜，以及多个具有旋转非对称自由曲面构造的自由曲面透镜，以及设置在后透镜组后部的反射镜，其具有朝向至少在其一部分中，光的反射和旋转不对称的自由曲面构型。

84. 发明授权

US07670007B2 Projection display, projection optical system and transmission lens or free curved lens 有权
标题翻译：投影显示，投影光学系统和透镜或自由曲面透镜
公开(公告)号：US07670007B2
公开(公告)日：2010-03-02
申请号：US11473087
申请日：2006-06-23
申请人： Takanori Hisada , Hiroki Yoshikawa , Tetsu Ohishi , Koji Hirata , Naoyuki Ogura
发明人： Takanori Hisada , Hiroki Yoshikawa , Tetsu Ohishi , Koji Hirata , Naoyuki Ogura
IPC分类号： G03B21/14 , G03B21/28 , G02B7/02
CPC分类号： G03B21/10 , G02B3/02 , G02B13/16 , G02B13/18 , G02B27/0025 , G03B21/147 , G03B21/28
摘要： A projection display is capable of suppressing both the trapezoidal distortion of an enlarged image projected on a screen by oblique projection and aberrations resulting from oblique projection and includes a projection optical system provided with lenses that can be easily manufactured and assembled. The projection optical system for obliquely projecting an image formed by a display device on the screen includes a free curved lens having a rotationally asymmetric free curved surface. The free curved lens has fringing parts having outlines of a shape coinciding with an arc of a circle having the center on the optical axis of the free curved lens.
摘要翻译：投影显示器能够通过倾斜投影和由倾斜投影产生的像差来抑制投影在屏幕上的放大图像的梯形失真，并且包括具有容易制造和组装的透镜的投影光学系统。用于将由显示装置形成的图像倾斜投影在屏幕上的投影光学系统包括具有旋转非对称自由曲面的自由曲面透镜。自由弯曲透镜具有边缘部分，其具有与具有在自由曲面透镜的光轴上的中心的圆弧重合的形状轮廓。

85. 发明申请

US20090237627A1 Display Apparatus Using Micro Mirror Unit, and Method for Controlling Micro Mirror Unit 失效
标题翻译：微镜单元显示装置及微镜单元控制方法
公开(公告)号：US20090237627A1
公开(公告)日：2009-09-24
申请号：US12367662
申请日：2009-02-09
申请人： Tomoki KOBORI , Satoshi Ouchi , Koji Hirata , Hidehiro Ikeda , Kazuo Shikita
发明人： Tomoki KOBORI , Satoshi Ouchi , Koji Hirata , Hidehiro Ikeda , Kazuo Shikita
IPC分类号： G03B21/28 , G02B26/10
CPC分类号： G02B26/101 , G02B26/0833 , H04N9/312 , Y10S359/90
摘要： In a method for driving a micro mirror such as MEMS mirror and a display apparatus using the method, there are provided a mirror driving unit for driving the micro mirror which operates in a resonant mode and a nonresonant mode, a driving-condition setting unit for setting a mirror driving condition, a switching unit for switching on/off a mirror driving signal in the nonresonant mode, and a look-up table for indicating the relationship of a mirror response with respect to the driving condition already known in advance. The switching unit controls the transmission of the nonresonant-mode mirror driving signal while grasping the mirror response state with respect to the mirror driving signal, thereby finely increasing and decreasing a driving torque for the micro mirror. This fine increase and decrease allows the micro mirror to be fluctuated stably, and a further enhancement in the fluctuation rate.
摘要翻译：在使用该MEMS方法的微反射镜的驱动方法和使用该方法的显示装置中，设置有用于驱动以谐振模式和非共振模式工作的微反射镜的反射镜驱动单元，驱动条件设定单元，设置反射镜驱动条件，用于在非共振模式下接通/关闭镜驱动信号的切换单元，以及用于指示镜响应相对于预先已知的驾驶状态的关系的查找表。开关单元控制非谐振模式反射镜驱动信号的传输，同时掌握相对于反射镜驱动信号的反射镜响应状态，从而微调微型反射镜的驱动转矩。这种微小的增减使微镜稳定地波动，波动率进一步提高。

86. 发明授权

US07572652B2 Light emitting element and production method thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07572652B2
公开(公告)日：2009-08-11
申请号：US11708683
申请日：2007-02-21
申请人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
发明人： Yuhei Ikemoto , Koji Hirata , Kazuhiro Ito , Yu Uchida , Susumu Tsukimoto , Masanori Murakami
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007
摘要： A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.
摘要翻译：一种发光元件，具有由III族氮化物系化合物半导体形成并具有发光层的发光元件部。发光元件部分是通过在发光元件部分在衬底上生长之后通过湿法蚀刻来剥离衬底而形成的。发光元件部分具有剥离表面，其在将发光元件部分生长在基板上时形成为基本保持不变。

87. 发明申请

US20090173969A1 Semiconductor Device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20090173969A1
公开(公告)日：2009-07-09
申请号：US12225580
申请日：2007-05-30
申请人： Junjiro Kikawa , Akira Suzuki , Masayoshi Kosaki , Koji Hirata
发明人： Junjiro Kikawa , Akira Suzuki , Masayoshi Kosaki , Koji Hirata
IPC分类号： H01L29/778 , H01L33/00
CPC分类号： H01L29/7786 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L29/2003
摘要： A semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer and a GaN layer which device exhibits no changes over time in sheet resistance.As shown in FIG. 1, in a semiconductor device having an AlGaN—GaN heterojunction structure including an AlGaN layer 1 and a GaN layer 2, when the Al molar fraction of AlGaN (x %) and the thickness of the AlGaN layer (y nm) satisfy the relations: x+y
摘要翻译：具有包括AlGaN层和GaN层的AlGaN-GaN异质结结构的半导体器件，该器件在薄层电阻上随时间呈现不变化。如图所示。如图1所示，在具有包括AlGaN层1和GaN层2的AlGaN-GaN异质结结构的半导体器件中，当AlGaN的Al摩尔分数（x％）和AlGaN层的厚度（ynm）满足以下关系时： x + y <55，25 <= x <= 40，y> = 10，y小于临界厚度，从而在AlGaN层中不产生裂纹。因此，本发明提供一种半导体器件，尽管Al摩尔分数高，实际上其表面电阻几乎没有随时间变化。

88. 发明申请

US20090110943A1 Thermoplastic Resin Composition and Composite Molded Product 有权
标题翻译：热塑性树脂组合物和复合模制品
公开(公告)号：US20090110943A1
公开(公告)日：2009-04-30
申请号：US12227064
申请日：2007-05-08
申请人： Kazuo Nishimoto , Katsuya Furushige , Koji Hirata , Yoshito Nagao
发明人： Kazuo Nishimoto , Katsuya Furushige , Koji Hirata , Yoshito Nagao
IPC分类号： B32B27/08 , C08L33/20 , C08L51/00 , C08L33/10 , C08L53/00
CPC分类号： C08L55/02 , C08F279/02 , C08F279/04 , C08L25/12 , C08L33/20 , C08L51/003 , C08L51/04 , C08L53/00 , C08L2205/02 , C08L2205/03 , Y10T428/31909 , C08L2666/24 , C08L2666/04 , C08L2666/06 , C08L2666/02
摘要： A thermoplastic resin composition that has high chemical resistance, excellent appearance of a molded product thereof, and, as a surface layer material, good adhesion to a base material resin, particularly a PS resin or its waste resin, and that can provide a composite molded product having excellent processibility (for example, chipping resistance) and high durability (for example, heat-cycle resistance), and a composite molded product including the thermoplastic resin composition as a surface layer material. A thermoplastic resin composition that includes 100 parts by mass of a first vinyl (co)polymer (I) that is produced by (co)polymerization of at least one monomer component selected from the group consisting of aromatic vinyl compounds, vinyl cyanide compounds, and other vinyl monomers copolymerizable with these compounds, and 1 to 100 parts by mass of a vinyl copolymer (II) that is produced by copolymerization of a vinyl cyanide compound and another vinyl monomer copolymerizable with the vinyl cyanide compound and in which the content of the vinyl cyanide compound component in an acetone soluble fraction of the copolymer ranges from 0.1% to 15% by mass.
摘要翻译：具有高耐化学性，优异外观的成型体以及表层材料与基材树脂，特别是PS树脂或其废树脂的良好粘附性的热塑性树脂组合物，并且可以提供复合成型具有优异的加工性（例如耐崩裂性）和高耐久性（例如耐热循环性）的产品，以及包含作为表层材料的热塑性树脂组合物的复合成型体。一种热塑性树脂组合物，其包含100质量份的第一乙烯基（共）聚合物（I），其通过选自由芳族乙烯基化合物，乙烯基氰化合物和可与这些化合物共聚的其它乙烯基单体和1〜100质量份的乙烯基共聚物（II），其通过乙烯基氰化合物与可与乙烯基氰化合物共聚的其它乙烯基单体共聚而制备，其中乙烯基共聚物丙酮可溶部分中的氰化物化合物成分的含量为0.1〜15质量％。

89. 发明申请

US20090106959A1 Group III nitride semiconductor manufacturing system 有权
标题翻译： III族氮化物半导体制造系统
公开(公告)号：US20090106959A1
公开(公告)日：2009-04-30
申请号：US12289257
申请日：2008-10-23
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： H01L21/67
CPC分类号： C30B29/403 , C30B9/10 , Y10T29/41 , Y10T117/10
摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
摘要翻译：本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器，设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚，支撑坩埚的保持单元，旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖，其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分，旋转驱动单元，设置在所述反应容器的外部并调节所述旋转轴;以及供给管，其连接到所述旋转轴盖，并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中，其中，气体和熔体反应以生长III族氮化物半导体晶体。

90. 发明授权

US07524741B2 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device 有权
标题翻译：形成低温生长缓冲层的方法，发光元件及其制造方法以及发光器件
公开(公告)号：US07524741B2
公开(公告)日：2009-04-28
申请号：US11393808
申请日：2006-03-31
申请人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
发明人： Yasuhisa Ushida , Daisuke Shinoda , Daisuke Yamazaki , Koji Hirata , Yuhei Ikemoto , Naoki Shibata , Kazuo Aoki , Encarnacion Antonia Garcia Villora , Kiyoshi Shimamura
IPC分类号： H01L21/36 , H01L21/20
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/02414 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/007 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/00014 , H01L2924/00
摘要： A method of forming a low temperature-grown buffer layer having the steps of: placing a Ga2O3 substrate in a MOCVD apparatus; providing a H2 atmosphere in the MOCVD apparatus and setting a buffer layer growth condition having an atmosphere temperature of 350° C. to 550° C.; and supplying a source gas having two or more of TMG, TMA and NH3 onto the Ga2O3 substrate in the buffer layer growth condition to form the low temperature-grown buffer layer on the Ga2O3 substrate.
摘要翻译：一种形成低温生长缓冲层的方法，具有以下步骤：将Ga 2 O 3衬底放置在MOCVD装置中; 在MOCVD装置中提供H 2气氛，并设定气氛温度为350℃至550℃的缓冲层生长条件。并在缓冲层生长条件下将具有TMG，TMA和NH3两种以上的源气体供给到Ga 2 O 3衬底上，以在Ga 2 O 3衬底上形成低温生长缓冲层。

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