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    • 81. 发明授权
    • Projection optical unit, projection-type image displaying apparatus and projection-type image displaying system
    • 投影光学单元,投影型图像显示装置和投影型图像显示系统
    • US07857462B2
    • 2010-12-28
    • US12838915
    • 2010-07-19
    • Takanori HisadaKoji HirataMasahiko Yatsu
    • Takanori HisadaKoji HirataMasahiko Yatsu
    • G03B21/14G03B21/28
    • G03B21/28
    • A projection optical unit for a projection display apparatus, which displays an image upon a projection surface, obliquely, includes a front lens group disposed in a direction from an image display element to a projection surface, a rear lens group, and a reflection mirror formed so that a curvature of a portion for reflecting a light beam incident upon a lower end portion of the projection surface is larger than a curvature of a portion for reflecting a light beam incident upon an upper end of the projection surface. An optical axis of the front lens group and the rear lens group is more inclined with respect to a direction of the portion of the reflection mirror for reflecting the light beam incident upon the lower end portion of the projection surface than a normal line direction of the image display element.
    • 一种用于投影显示设备的投影光学单元,其在投影表面上倾斜地显示图像,包括沿从图像显示元件到投影表面的方向设置的前透镜组,后透镜组和形成的反射镜 使得入射到投影表面的下端部分上的反射光束的部分的曲率大于用于反射入射在投影表面的上端的光束的部分的曲率。 前透镜组和后透镜组的光轴相对于反射镜的部分的方向更倾斜,用于反射入射在投影表面的下端部上的光束,而不是垂直方向 图像显示元件。
    • 88. 发明申请
    • Thermoplastic Resin Composition and Composite Molded Product
    • 热塑性树脂组合物和复合模制品
    • US20090110943A1
    • 2009-04-30
    • US12227064
    • 2007-05-08
    • Kazuo NishimotoKatsuya FurushigeKoji HirataYoshito Nagao
    • Kazuo NishimotoKatsuya FurushigeKoji HirataYoshito Nagao
    • B32B27/08C08L33/20C08L51/00C08L33/10C08L53/00
    • C08L55/02C08F279/02C08F279/04C08L25/12C08L33/20C08L51/003C08L51/04C08L53/00C08L2205/02C08L2205/03Y10T428/31909C08L2666/24C08L2666/04C08L2666/06C08L2666/02
    • A thermoplastic resin composition that has high chemical resistance, excellent appearance of a molded product thereof, and, as a surface layer material, good adhesion to a base material resin, particularly a PS resin or its waste resin, and that can provide a composite molded product having excellent processibility (for example, chipping resistance) and high durability (for example, heat-cycle resistance), and a composite molded product including the thermoplastic resin composition as a surface layer material. A thermoplastic resin composition that includes 100 parts by mass of a first vinyl (co)polymer (I) that is produced by (co)polymerization of at least one monomer component selected from the group consisting of aromatic vinyl compounds, vinyl cyanide compounds, and other vinyl monomers copolymerizable with these compounds, and 1 to 100 parts by mass of a vinyl copolymer (II) that is produced by copolymerization of a vinyl cyanide compound and another vinyl monomer copolymerizable with the vinyl cyanide compound and in which the content of the vinyl cyanide compound component in an acetone soluble fraction of the copolymer ranges from 0.1% to 15% by mass.
    • 具有高耐化学性,优异外观的成型体以及表层材料与基材树脂,特别是PS树脂或其废树脂的良好粘附性的热塑性树脂组合物,并且可以提供复合成型 具有优异的加工性(例如耐崩裂性)和高耐久性(例如耐热循环性)的产品,以及包含作为表层材料的热塑性树脂组合物的复合成型体。 一种热塑性树脂组合物,其包含100质量份的第一乙烯基(共)聚合物(I),其通过选自由芳族乙烯基化合物,乙烯基氰化合物和 可与这些化合物共聚的其它乙烯基单体和1〜100质量份的乙烯基共聚物(II),其通过乙烯基氰化合物与可与乙烯基氰化合物共聚的其它乙烯基单体共聚而制备,其中乙烯基 共聚物丙酮可溶部分中的氰化物化合物成分的含量为0.1〜15质量%。
    • 89. 发明申请
    • Group III nitride semiconductor manufacturing system
    • III族氮化物半导体制造系统
    • US20090106959A1
    • 2009-04-30
    • US12289257
    • 2008-10-23
    • Shiro YamazakiKoji Hirata
    • Shiro YamazakiKoji Hirata
    • H01L21/67
    • C30B29/403C30B9/10Y10T29/41Y10T117/10
    • The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
    • 本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器,设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚,支撑坩埚的保持单元, 旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖,其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分, 旋转驱动单元,设置在所述反应容器的外部并调节所述旋转轴;以及供给管,其连接到所述旋转轴盖,并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中,其中, 气体和熔体反应以生长III族氮化物半导体晶体。