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81. 发明申请

US20100009298A1 FORMING SUB-LITHOGRAPHIC PATTERNS USING DOUBLE EXPOSURE 失效
标题翻译：使用双重曝光形成亚光刻图案
公开(公告)号：US20100009298A1
公开(公告)日：2010-01-14
申请号：US12170722
申请日：2008-07-10
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/20
CPC分类号： G03F7/2024
摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.
摘要翻译：提出了使用双重曝光形成亚光刻图案的方法。一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界; 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。

82. 发明申请

US20090311490A1 CHEMICAL TRIM OF PHOTORESIST LINES BY MEANS OF A TUNED OVERCOAT MATERIAL 有权
标题翻译：通过调谐过滤材料的化学品线的化学研究
公开(公告)号：US20090311490A1
公开(公告)日：2009-12-17
申请号：US12137743
申请日：2008-06-12
申请人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
发明人： Sean David Burns , Matthew E. Colburn , Steven John Holmes , Wu-Song Huang
IPC分类号： B32B3/00 , G03F7/20
CPC分类号： G03F7/40 , Y10T428/24802
摘要： A new lithographic process comprises reducing the linewidth of an image while maintaining the lithographic process window, and using this process to fabricate pitch split structures comprising nm order (e.g., about 22 nm) node semiconductor devices. The process comprises applying a lithographic resist layer on a surface of a substrate and patterning and developing the lithographic resist layer to form a nm order node image having an initial line width. Overcoating the nm order node image with an acidic polymer produces an acidic polymer coated image. Heating the acidic polymer coated image gives a heat treated coating on the image, the heating being conducted at a temperature and for a time sufficient to reduce the initial linewidth to a subsequent narrowed linewidth. Developing the heated treated coating removes it from the image resulting in a free-standing trimmed lithographic feature on the substrate. Optionally repeating the foregoing steps further reduces the linewidth of the narrowed line. The invention also comprises a product produced by this process.
摘要翻译：新的光刻工艺包括在保持光刻工艺窗口的同时降低图像的线宽，并且使用该工艺来制造包括nm阶（例如约22nm）的节点半导体器件的间距分裂结构。该方法包括在基片的表面上施加平版印刷抗蚀剂层，并对平版印刷抗蚀剂层进行图形化和显影，以形成具有初始线宽的nm阶节点图像。用酸性聚合物覆盖nm阶节点图像产生酸性聚合物涂层图像。加热酸性聚合物涂覆的图像给图像上的热处理涂层，加热在足以将初始线宽降低到随后变窄的线宽的温度和时间内进行。显影加热处理的涂层将其从图像中去除，从而在基底上产生独立的修整光刻特征。可选地，重复前述步骤进一步减小了变窄线的线宽。本发明还包括通过该方法生产的产品。

83. 发明申请

US20090286180A1 FUSED AROMATIC STRUCTURES AND METHODS FOR PHOTOLITHOGRAPHIC APPLICATIONS 有权
标题翻译：用于光刻应用的熔融芳构结构和方法
公开(公告)号：US20090286180A1
公开(公告)日：2009-11-19
申请号：US12508652
申请日：2009-07-24
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

84. 发明授权

US07566527B2 Fused aromatic structures and methods for photolithographic applications 失效
标题翻译：熔融芳族结构和光刻应用的方法
公开(公告)号：US07566527B2
公开(公告)日：2009-07-28
申请号：US11769089
申请日：2007-06-27
申请人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
发明人： James J. Bucchignano , Wu-Song Huang , Pushkara R. Varanasi , Roy R. Yu
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36 , G03F7/38
CPC分类号： G03F7/0045 , G03F7/0392 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition and a method for forming a patterned feature on a substrate. The composition comprises a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, and a photosensitive acid generator. The method includes providing a composition including a photosensitive acid generator and a molecular glass having at least one fused polycyclic moiety and at least one base soluble functional group protected with an acid labile protecting group, forming a film of the composition on the substrate, patternwise imaging the film, wherein at least one region of the film is exposed to radiation or a beam of particles, resulting in production of an acid catalyst in the exposed region, baking the film, developing the film, resulting in removal of base-soluble exposed regions, wherein a patterned feature from the film remains following the removal.
摘要翻译：抗蚀剂组合物和在基材上形成图案化特征的方法。该组合物包含具有至少一个稠合多环部分和至少一个被酸不稳定保护基团保护的碱溶性官能团的分子玻璃和光敏酸产生剂。该方法包括提供包含光敏酸产生剂和具有至少一个稠合多环部分的分子玻璃和至少一个被酸不稳定保护基团保护的碱可溶官能团的组合物，在该基质上形成该组合物的膜，图案成像所述膜，其中所述膜的至少一个区域暴露于辐射或颗粒束，导致在所述暴露区域中产生酸催化剂，烘烤所述膜，显影所述膜，导致去除可溶于碱的暴露区域，其中来自膜的图案化特征在去除之后保持不变。

85. 发明授权

US07560222B2 Si-containing polymers for nano-pattern device fabrication 失效
标题翻译：用于纳米图案器件制造的含Si聚合物
公开(公告)号：US07560222B2
公开(公告)日：2009-07-14
申请号：US11554877
申请日：2006-10-31
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Yi-Hsiung S. Lin
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Yi-Hsiung S. Lin
IPC分类号： G03F7/36 , G03F7/34
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
摘要翻译：提供具有位于其中的纳米级图案的抗蚀剂聚合物，其为沿与其主表面（顶部和底部）基本垂直的方向取向的亚光刻中空孔（或开口）的形式。具有纳米尺度图案的这种抗蚀剂聚合物被用作将纳米尺度图案转移到诸如介电材料的下层基底的蚀刻掩模。在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级空隙（或开口）。电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述两个单体单元（A和B）具有不同的蚀刻速率。

86. 发明申请

US20090176174A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSTIONS 有权
标题翻译：多次曝光光刻方法和光电复合材料
公开(公告)号：US20090176174A1
公开(公告)日：2009-07-09
申请号：US11970761
申请日：2008-01-08
申请人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Ranee Wai-Ling Kwong , Sen Liu , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：方法和组成。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

87. 发明申请

US20090155718A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
公开(公告)号：US20090155718A1
公开(公告)日：2009-06-18
申请号：US11955451
申请日：2007-12-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

88. 发明申请

US20070087285A1 Top antireflective coating composition with low refractive index at 193nm radiation wavelength 有权
$Top antireflective coating composition with low refractive index at 193nm radiation wavelength$
标题翻译：顶部抗反射涂层组合物，在193nm辐射波长下具有低折射率
公开(公告)号：US20070087285A1
公开(公告)日：2007-04-19
申请号：US11249693
申请日：2005-10-13
申请人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
发明人： Wu-Song Huang , William Heath , Kaushal Patel , Pushkara Varanasi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193 nm have been found which are especially useful as top antireflective coatings in 193 nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193 nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳族部分和折射率值n小于1.5的水溶性基团可溶性聚合物的组合物，其特别用作193nm干法光刻中的顶部抗反射涂层过程。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时通过其在含水碱性显影剂溶液中的溶解度而提供易于使用。

89. 发明授权

US09449822B2 Method of forming semiconductor structures with contact holes 有权
标题翻译：形成具有接触孔的半导体结构的方法
公开(公告)号：US09449822B2
公开(公告)日：2016-09-20
申请号：US12846020
申请日：2010-07-29
申请人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
发明人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
摘要翻译：本发明的实施例提供一种形成半导体结构的方法。该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。

90. 发明授权

US09316916B2 Method to mitigate resist pattern critical dimension variation in a double-exposure process 有权
标题翻译：减轻双曝光过程中抗蚀剂图案临界尺寸变化的方法
公开(公告)号：US09316916B2
公开(公告)日：2016-04-19
申请号：US12419403
申请日：2009-04-07
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/207 , G03F7/40 , G03F7/00 , G03F7/20 , G03F7/38
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/2024 , G03F7/203 , G03F7/2041 , G03F7/38
摘要： A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.
摘要翻译：减轻双曝光工艺中抗蚀剂图案临界尺寸（CD）变化的方法通常包括在衬底上形成光致抗蚀剂层; 将光致抗蚀剂层暴露于第一辐射; 显影光致抗蚀剂层以在光致抗蚀剂层中形成第一图案; 在光致抗蚀剂层上形成顶涂层; 将顶涂层和光致抗蚀剂层暴露于第二辐射; 去除顶涂层; 并且在光致抗蚀剂层中显影光致抗蚀剂层以形成第二图案。

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