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81. 发明授权

US08637368B2 Fabrication of MOS device with varying trench depth 有权
标题翻译：具有不同沟槽深度的MOS器件的制造
公开(公告)号：US08637368B2
公开(公告)日：2014-01-28
申请号：US13559975
申请日：2012-07-27
申请人： Anup Bhalla , Xiaobin Wang
发明人： Anup Bhalla , Xiaobin Wang
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/1095 , H01L29/165 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： Fabricating a semiconductor device includes: forming a gate trench in an epitaxial layer overlaying a semiconductor substrate; disposing gate material in the gate trench; forming a body in the epitaxial layer; forming a source in the body; forming an active region contact trench that has a varying trench depth; and disposing a contact electrode within the active region contact trench. Forming the active region contact trench includes performing a first etch to form a first contact trench depth associated with a first region, and performing a second etch to form a second contact trench depth associated with a second region. The first contact trench depth is substantially different from the second contact trench depth.
摘要翻译：制造半导体器件包括：在覆盖半导体衬底的外延层中形成栅极沟槽; 在门沟中设置栅极材料; 在外延层中形成主体; 在身体中形成一个来源; 形成具有变化的沟槽深度的有源区接触沟槽; 以及将接触电极设置在有源区接触沟槽内。形成有源区接触沟槽包括执行第一蚀刻以形成与第一区域相关联的第一接触沟槽深度，以及执行第二蚀刻以形成与第二区域相关联的第二接触沟槽深度。第一接触沟槽深度与第二接触沟槽深度基本不同。

82. 发明授权

US08481181B2 Exchange coupled magnetic elements 有权
标题翻译：交换耦合磁性元件
公开(公告)号：US08481181B2
公开(公告)日：2013-07-09
申请号：US13077946
申请日：2011-03-31
申请人： Xiaobin Wang , Kaizhong Gao
发明人： Xiaobin Wang , Kaizhong Gao
IPC分类号： G11B5/65
CPC分类号： G11B5/66 , Y10T428/115
摘要： Approaches to reduce switching field distribution in energy assisted magnetic storage devices involve first and second exchange coupled magnetic elements. The first magnetic elements have anisotropy, Hk1, volume, V1 and the second magnetic elements are magnetically exchange coupled to the first magnetic elements and have anisotropy Hk2, and volume V2. The thermal stability of the exchange coupled magnetic elements is greater than about 60 kBT at a storage temperature of about 300 K. The magnetic switching field distribution, SFD, of the exchange coupled magnetic elements is less than about 200% at a predetermined magnetic switching field and a predetermined assisting switching energy.
摘要翻译：降低能量辅助磁存储装置中的开关场分布的方法包括第一和第二交换耦合磁性元件。第一磁性元件具有各向异性Hk1，体积V1，第二磁性元件磁耦合到第一磁性元件并具有各向异性Hk2和体积V2。在约300K的存储温度下，交换耦合磁性元件的热稳定性大于约60kBT。交换耦合磁性元件的磁开关场分布SFD在预定的磁切换场下小于约200％和预定的辅助切换能量。

83. 发明授权

US08354316B2 Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection 有权
公开(公告)号：US08354316B2
公开(公告)日：2013-01-15
申请号：US12925820
申请日：2010-10-29
申请人： Anup Bhalla , Xiaobin Wang , Wei Wang , Yi Su , Daniel Ng
发明人： Anup Bhalla , Xiaobin Wang , Wei Wang , Yi Su , Daniel Ng
IPC分类号： H01L21/8234
CPC分类号： H01L29/7811 , H01L27/0255 , H01L29/0619 , H01L29/0696 , H01L29/404 , H01L29/66734 , H01L29/7808 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor power device supported on a semiconductor substrate includes an electrostatic discharge (ESD) protection circuit disposed on a first portion of patterned ESD polysilicon layer on top of the semiconductor substrate. The semiconductor power device further includes a second portion of the patterned ESD polysilicon layer constituting a body implant ion block layer for blocking implanting body ions to enter into the semiconductor substrate below the body implant ion block layer. In an exemplary embodiment, the electrostatic discharge (ESD) polysilicon layer on top of the semiconductor substrate further covering a scribe line on an edge of the semiconductor device whereby a passivation layer is no longer required manufacturing the semiconductor device for reducing a mask required for patterning the passivation layer.

84. 发明授权

US08289758B2 Magnetic tunnel junction with electronically reflective insulative spacer 有权
标题翻译：磁性隧道结与电子反射绝缘垫片
公开(公告)号：US08289758B2
公开(公告)日：2012-10-16
申请号：US12943979
申请日：2010-11-11
申请人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
发明人： Yuankai Zheng , Dimitar V. Dimitrov , Wei Tian , Dexin Wang , Zheng Gao , Xiaobin Wang
IPC分类号： G11C11/16
CPC分类号： G11C11/161
摘要： Magnetic tunnel junctions having a specular insulative spacer are disclosed. The magnetic tunnel junction includes a free magnetic layer, a reference magnetic layer, an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the reference magnetic layer, and an electrically insulating and electronically reflective layer positioned to reflect at least a portion of electrons back into the free magnetic layer.
摘要翻译：公开了具有镜面绝缘间隔物的磁隧道结。磁性隧道结包括自由磁性层，参考磁性层，将自由磁性层与参考磁性层分离的电绝缘和非磁性隧道势垒层，以及电绝缘和电子反射层，其被定位成反射至少一个部分电子返回自由磁性层。

85. 发明授权

US08253192B2 MOS device with varying trench depth 有权
标题翻译：具有不同沟槽深度的MOS器件
公开(公告)号：US08253192B2
公开(公告)日：2012-08-28
申请号：US13088275
申请日：2011-04-15
申请人： Anup Bhalla , Xiaobin Wang
发明人： Anup Bhalla , Xiaobin Wang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0623 , H01L29/1095 , H01L29/165 , H01L29/41766 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： A semiconductor device includes a drain region comprising an epitaxial layer, a body disposed in the epitaxial layer, a source embedded in the body, a gate trench extending into the epitaxial layer, a gate disposed in the gate trench, an active region contact trench extending through the source, and an active region contact electrode disposed within the active region contact trench. The active region contact trench has a first width associated with a first region that is in proximity to a bottom portion of the body and a second width associated with a second region that is in proximity to a bottom portion of the source. The first width is substantially different from the second width.
摘要翻译：半导体器件包括：漏区，包括外延层，设置在外延层中的主体，嵌入在主体中的源极，延伸到外延层中的栅极沟槽，设置在栅极沟槽中的栅极，有源区域接触沟槽延伸通过源极，以及设置在有源区接触沟槽内的有源区接触电极。有源区接触沟槽具有与位于本体底部附近的第一区域相关联的第一宽度和与源极底部附近的第二区域相关联的第二宽度。第一宽度与第二宽度大致不同。

86. 发明授权

US08247329B2 Nanotube semiconductor devices 有权
标题翻译：纳米管半导体器件
公开(公告)号：US08247329B2
公开(公告)日：2012-08-21
申请号：US13024256
申请日：2011-02-09
申请人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
发明人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
IPC分类号： H01L21/311
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0692 , H01L29/1095 , H01L29/6609 , H01L29/66143 , H01L29/66348 , H01L29/66666 , H01L29/7397 , H01L29/861 , H01L29/872
摘要： A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.
摘要翻译：形成半导体器件的方法包括：使用形成在半导体本体中的沟槽的侧壁上的薄外延层来形成纳米管区域。薄的外延层具有均匀的掺杂浓度。在另一个实施例中，在半导体主体中的沟槽的侧壁上形成与半导体本体相同的导电类型的第一薄外延层，并且在第一外延层上形成相反导电类型的第二薄外延层。第一和第二外延层具有均匀的掺杂浓度。选择第一和第二外延层和半导体本体的厚度和掺杂浓度以实现电荷平衡。在一个实施例中，半导体本体是轻掺杂的P型衬底。可以使用相同的N-Epi / P-Epi纳米管结构来形成垂直沟槽MOSFET，IGBT，肖特基二极管和P-N结二极管。

87. 发明申请

US20110198605A1 Termination Structure with Multiple Embedded Potential Spreading Capacitive Structures for Trench MOSFET and Method 有权
标题翻译：具有多个嵌入式电位扩展结构的端接结构，用于沟槽MOSFET和方法
公开(公告)号：US20110198605A1
公开(公告)日：2011-08-18
申请号：US12704528
申请日：2010-02-12
申请人： Xiaobin Wang , Anup Bhalla , Hamza Yilmaz , Daniel Ng
发明人： Xiaobin Wang , Anup Bhalla , Hamza Yilmaz , Daniel Ng
IPC分类号： H01L29/94 , H01L21/02
CPC分类号： H01L29/407 , H01L21/76205 , H01L29/04 , H01L29/0619 , H01L29/0638 , H01L29/0649 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW.
摘要翻译：公开了具有多个嵌入式电位扩展电容结构（TSMEC）和方法的端接结构，用于在具有底部漏电极的体半导体层（BSL）的顶部端接邻近的沟槽MOSFET。 BSL具有支持漏极 - 源极电压（DSV）的近端体半导体壁（PBSW），并将TSMEC与沟槽MOSFET分离。 TSMEC具有由PBSW和远端体半导体壁（DBSW）界定的氧化物填充的大深沟槽（OFLDT）。 OFLDT包括位于大深度氧化物沟槽内部以及PBSW和DBSW之间的BSL中的大型深层氧化物沟槽和嵌入式电容结构（EBCS），用于在其间空间扩展DSV。在一个实施例中，EBCS包含OFLDT的交错导电嵌入式多晶半导体区域（EPSR）和氧化物柱（OXC），与PBSW相邻的近端EPSR连接到活动上部源区域，并且与DBSW相邻的远端EPSR被连接到星展集团

88. 发明授权

US07910486B2 Method for forming nanotube semiconductor devices 有权
标题翻译：形成纳米管半导体器件的方法
公开(公告)号：US07910486B2
公开(公告)日：2011-03-22
申请号：US12484166
申请日：2009-06-12
申请人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
发明人： Hamza Yilmaz , Xiaobin Wang , Anup Bhalla , John Chen , Hong Chang
IPC分类号： H01L21/311
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0692 , H01L29/1095 , H01L29/6609 , H01L29/66143 , H01L29/66348 , H01L29/66666 , H01L29/7397 , H01L29/861 , H01L29/872
摘要： A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.
摘要翻译：形成半导体器件的方法包括：使用形成在半导体本体中的沟槽的侧壁上的薄外延层来形成纳米管区域。薄的外延层具有均匀的掺杂浓度。在另一个实施例中，在半导体主体中的沟槽的侧壁上形成与半导体本体相同的导电类型的第一薄外延层，并且在第一外延层上形成相反导电类型的第二薄外延层。第一和第二外延层具有均匀的掺杂浓度。选择第一和第二外延层和半导体本体的厚度和掺杂浓度以实现电荷平衡。在一个实施例中，半导体本体是轻掺杂的P型衬底。可以使用相同的N-Epi / P-Epi纳米管结构形成垂直沟槽MOSFET，IGBT，肖特基二极管和P-N结二极管。

89. 发明授权

US07884454B2 Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package 有权
公开(公告)号：US07884454B2
公开(公告)日：2011-02-08
申请号：US12209106
申请日：2008-09-11
申请人： Jun Lu , Anup Bhalla , Xiaobin Wang , Allen Chang , Man Sheng Hu , Xiaotian Zhang
发明人： Jun Lu , Anup Bhalla , Xiaobin Wang , Allen Chang , Man Sheng Hu , Xiaotian Zhang
IPC分类号： H01L23/495
CPC分类号： H01L21/823487 , H01L23/4952 , H01L23/49524 , H01L23/49531 , H01L23/49562 , H01L23/49575 , H01L23/58 , H01L24/37 , H01L24/39 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/85 , H01L24/91 , H01L25/071 , H01L25/074 , H01L25/18 , H01L27/088 , H01L2224/05552 , H01L2224/0603 , H01L2224/32145 , H01L2224/32245 , H01L2224/37124 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2224/48145 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49112 , H01L2224/4917 , H01L2224/49171 , H01L2224/49431 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/85 , H01L2225/06562 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H02J7/0031 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
摘要： A semiconductor package assembly may include a lead frame having a die bonding pad and plurality of leads coupled to the first die bonding pad. A vertical semiconductor device may be bonded to the die bonding pad. The device may have a conductive pad electrically connected to one lead through a first bond wire. An electrically isolated conductive trace may be formed from a layer of conductive material of the first semiconductor device. The conductive trace provides an electrically conductive path between the first bond wire and a second bond wire. The conductive path may either pass underneath a third bond wire thereby avoiding the third bond wire crossing another bond wire, or the conductive path may result in a reduced length for the first and second bond wires that is less than a predetermined maximum length.

90. 发明申请

US20100321986A1 MULTI-BIT STRAM MEMORY CELLS 有权
公开(公告)号：US20100321986A1
公开(公告)日：2010-12-23
申请号：US12869950
申请日：2010-08-27
申请人： Dimitar V. Dimitrov , Zheng Gao , Xiaobin Wang
发明人： Dimitar V. Dimitrov , Zheng Gao , Xiaobin Wang
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/161 , G11C11/1659 , G11C11/1675
摘要： A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided.

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