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    • 1. 发明授权
    • Nanotube semiconductor devices
    • 纳米管半导体器件
    • US08247329B2
    • 2012-08-21
    • US13024256
    • 2011-02-09
    • Hamza YilmazXiaobin WangAnup BhallaJohn ChenHong Chang
    • Hamza YilmazXiaobin WangAnup BhallaJohn ChenHong Chang
    • H01L21/311
    • H01L29/0665B82Y10/00H01L29/0692H01L29/1095H01L29/6609H01L29/66143H01L29/66348H01L29/66666H01L29/7397H01L29/861H01L29/872
    • A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.
    • 形成半导体器件的方法包括:使用形成在半导体本体中的沟槽的侧壁上的薄外延层来形成纳米管区域。 薄的外延层具有均匀的掺杂浓度。 在另一个实施例中,在半导体主体中的沟槽的侧壁上形成与半导体本体相同的导电类型的第一薄外延层,并且在第一外延层上形成相反导电类型的第二薄外延层。 第一和第二外延层具有均匀的掺杂浓度。 选择第一和第二外延层和半导体本体的厚度和掺杂浓度以实现电荷平衡。 在一个实施例中,半导体本体是轻掺杂的P型衬底。 可以使用相同的N-Epi / P-Epi纳米管结构来形成垂直沟槽MOSFET,IGBT,肖特基二极管和P-N结二极管。
    • 2. 发明授权
    • Method for forming nanotube semiconductor devices
    • 形成纳米管半导体器件的方法
    • US07910486B2
    • 2011-03-22
    • US12484166
    • 2009-06-12
    • Hamza YilmazXiaobin WangAnup BhallaJohn ChenHong Chang
    • Hamza YilmazXiaobin WangAnup BhallaJohn ChenHong Chang
    • H01L21/311
    • H01L29/0665B82Y10/00H01L29/0692H01L29/1095H01L29/6609H01L29/66143H01L29/66348H01L29/66666H01L29/7397H01L29/861H01L29/872
    • A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.
    • 形成半导体器件的方法包括:使用形成在半导体本体中的沟槽的侧壁上的薄外延层来形成纳米管区域。 薄的外延层具有均匀的掺杂浓度。 在另一个实施例中,在半导体主体中的沟槽的侧壁上形成与半导体本体相同的导电类型的第一薄外延层,并且在第一外延层上形成相反导电类型的第二薄外延层。 第一和第二外延层具有均匀的掺杂浓度。 选择第一和第二外延层和半导体本体的厚度和掺杂浓度以实现电荷平衡。 在一个实施例中,半导体本体是轻掺杂的P型衬底。 可以使用相同的N-Epi / P-Epi纳米管结构形成垂直沟槽MOSFET,IGBT,肖特基二极管和P-N结二极管。
    • 6. 发明申请
    • Nanotube Semiconductor Devices
    • 纳米管半导体器件
    • US20110140167A1
    • 2011-06-16
    • US13024256
    • 2011-02-09
    • Hamza YilmazXiaobin WangAnup BhallaJohn ChenHong Chang
    • Hamza YilmazXiaobin WangAnup BhallaJohn ChenHong Chang
    • H01L29/739H01L21/331
    • H01L29/0665B82Y10/00H01L29/0692H01L29/1095H01L29/6609H01L29/66143H01L29/66348H01L29/66666H01L29/7397H01L29/861H01L29/872
    • A method for forming a semiconductor device includes forming a nanotube region using a thin epitaxial layer formed on the sidewall of a trench in the semiconductor body. The thin epitaxial layer has uniform doping concentration. In another embodiment, a first thin epitaxial layer of the same conductivity type as the semiconductor body is formed on the sidewall of a trench in the semiconductor body and a second thin epitaxial layer of the opposite conductivity type is formed on the first epitaxial layer. The first and second epitaxial layers have uniform doping concentration. The thickness and doping concentrations of the first and second epitaxial layers and the semiconductor body are selected to achieve charge balance. In one embodiment, the semiconductor body is a lightly doped P-type substrate. A vertical trench MOSFET, an IGBT, a Schottky diode and a P-N junction diode can be formed using the same N-Epi/P-Epi nanotube structure.
    • 形成半导体器件的方法包括:使用形成在半导体本体中的沟槽的侧壁上的薄外延层来形成纳米管区域。 薄的外延层具有均匀的掺杂浓度。 在另一个实施例中,在半导体主体中的沟槽的侧壁上形成与半导体本体相同的导电类型的第一薄外延层,并且在第一外延层上形成相反导电类型的第二薄外延层。 第一和第二外延层具有均匀的掺杂浓度。 选择第一和第二外延层和半导体本体的厚度和掺杂浓度以实现电荷平衡。 在一个实施例中,半导体本体是轻掺杂的P型衬底。 可以使用相同的N-Epi / P-Epi纳米管结构形成垂直沟槽MOSFET,IGBT,肖特基二极管和P-N结二极管。