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81. 发明申请

US20060237330A1 Algorithm for real-time process control of electro-polishing 失效
公开(公告)号：US20060237330A1
公开(公告)日：2006-10-26
申请号：US11475583
申请日：2006-06-27
申请人： Antoine Manens , Alain Duboust , Siew Neo , Liang-Yuh Chen
发明人： Antoine Manens , Alain Duboust , Siew Neo , Liang-Yuh Chen
IPC分类号： B23H7/00
CPC分类号： B24B49/04 , B23H5/06 , B23H5/08 , B24B37/013 , B24B37/042 , B24B37/046 , B24B49/16 , C25F3/02 , C25F7/00 , G05B2219/45232 , G05B2219/49085 , H04N1/00
摘要： Method and apparatus for process control of electro-processes. The method includes electro-processing a wafer by the application of two or more biases and determining an amount of charge removed as a result of each bias, separately. In one embodiment, an endpoint is determined for each bias when the amount of charge removed for a bias substantially equals a respective target charge calculated for the bias.

82. 发明申请

US20120258649A1 Method of Making and Apparatus Having Windowless Polishing Pad and Protected Fiber 有权
标题翻译：具有无窗抛光垫和保护纤维的制造方法和装置
公开(公告)号：US20120258649A1
公开(公告)日：2012-10-11
申请号：US13448299
申请日：2012-04-16
申请人： Jimin Zhang , Alain Duboust , Doyle E. Bennett
发明人： Jimin Zhang , Alain Duboust , Doyle E. Bennett
IPC分类号： B24B49/00
CPC分类号： B24B37/205 , B24B37/013 , B24B49/12
摘要： A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.
摘要翻译：抛光系统包括具有延伸穿过抛光垫的所有层的孔的抛光垫和位于光学监控系统的发光或光导元件顶部的透光膜。

83. 发明申请

US20060217049A1 Perforation and grooving for polishing articles 审中-公开
标题翻译：用于抛光物品的穿孔和开槽
公开(公告)号：US20060217049A1
公开(公告)日：2006-09-28
申请号：US11418557
申请日：2006-05-06
申请人： Shijian Li , Liang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Liang-Yuh Chen , Alain Duboust
IPC分类号： H01L21/306 , B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing and planarizing one or more layers of material on a substrate, or combinations thereof, are disclosed. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of perforations formed in at least a portion of the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.
摘要翻译：提供了方法，制品和装置，用于沉积和平坦化衬底上的一层或多层材料，或其组合。在一个实施例中，提供了用于抛光衬底的制品，其包括具有抛光表面的抛光制品，在抛光制品的至少一部分中形成的用于材料流动的多个穿孔，以及多个槽，在抛光面上。制造物品可以用于处理基材的方法，包括将基底定位在含有抛光制品的电解质溶液中，任选地通过电化学沉积方法将材料沉积在基底上，并用抛光制品抛光基底。

84. 发明申请

US20060148381A1 Pad assembly for electrochemical mechanical processing 有权
标题翻译：焊接组件用于电化学机械加工
公开(公告)号：US20060148381A1
公开(公告)日：2006-07-06
申请号：US11369065
申请日：2006-03-06
申请人： Shou-Sung Chang , Stan Tsai , Donald Olgado , Liang-Yuh Chen , Alain Duboust , Ralph Wadensweiler
发明人： Shou-Sung Chang , Stan Tsai , Donald Olgado , Liang-Yuh Chen , Alain Duboust , Ralph Wadensweiler
IPC分类号： B24B51/00
CPC分类号： B24B37/22 , B23H5/06 , B23H5/08 , B23H5/10 , B24B37/046 , B24B37/11 , B24B37/24 , B24B37/26 , B24B49/16 , B24B53/017 , C25D17/10 , H01L21/32125
摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a processing layer having a working surface adapted to process a substrate, a lower layer coupled to and disposed below the processing layer, and an electrode having an upper surface disposed above the lower layer and below the working surface of the processing layer. The upper surface of the electrode is at least partially exposed to the working surface to provide an electrolyte pathway between the upper surface of the electrode and the working surface.
摘要翻译：提供了用于处理基板的垫组件的实施例。焊盘组件包括处理层，其具有适于处理衬底的工作表面，耦合到处理层的下层并设置在处理层下方的电极，以及具有设置在处理层的工作表面下方和下方的上表面的电极。电极的上表面至少部分地暴露于工作表面，以在电极的上表面和工作表面之间提供电解质通路。

85. 发明授权

US07059948B2 Articles for polishing semiconductor substrates 失效
公开(公告)号：US07059948B2
公开(公告)日：2006-06-13
申请号：US10026854
申请日：2001-12-20
申请人： Shijian Li , Llang-Yuh Chen , Alain Duboust
发明人： Shijian Li , Llang-Yuh Chen , Alain Duboust
IPC分类号： B24D11/00
CPC分类号： B24B37/24 , B23H5/08 , B24B57/02
摘要： Methods, articles of manufacture, and apparatus are provided for depositing a layer, planarizing a layer, or combinations thereof, a material layer on a substrate. In one embodiment, an article of manufacture is provided for polishing a substrate, comprising a polishing article having a polishing surface, a plurality of passages formed through the polishing article for flow of material therethrough, and a plurality of grooves disposed in the polishing surface. The article of manufacture may be used in a processing system. The article of manufacture may be used in a method for processing a substrate, comprising positioning the substrate in an electrolyte solution containing a polishing article, optionally depositing a material on the substrate by an electrochemical deposition method, and polishing the substrate with the polishing article.

86. 发明申请

US20050161341A1 Edge bead removal by an electro polishing process 有权
标题翻译：通过电抛光工艺去除边缘珠
公开(公告)号：US20050161341A1
公开(公告)日：2005-07-28
申请号：US11087878
申请日：2005-03-22
申请人： Alain Duboust , Antoine Manens , Liang-Yuh Chen
发明人： Alain Duboust , Antoine Manens , Liang-Yuh Chen
IPC分类号： B23H5/02 , B23H5/08 , B24B37/04
CPC分类号： B24B37/042 , B23H5/08 , B24B37/046
摘要： A method and apparatus for the removal of a deposited conductive layer along an edge of a substrate using an electrode configured to electro polish a substrate edge are disclosed. The electro polishing of the substrate edge may occur simultaneously during electrochemical mechanical processing (Ecmp) of a substrate face. In one embodiment, a power source applies a bias between the substrate and at least two electrodes. The electrodes form a first electrode zone proximate the substrate edge at a sufficient potential to electro polish the substrate edge, thereby removing the conductive layer from the substrate edge. A second electrode zone with a lower potential than the first electrode zone is aligned proximate the substrate face during processing to enable Ecmp of the substrate face.
摘要翻译：公开了一种用于使用构造成电抛光衬底边缘的电极沿着衬底的边缘去除沉积的导电层的方法和装置。基板边缘的电抛光可以在基板表面的电化学机械处理（Ecmp）期间同时发生。在一个实施例中，电源在衬底和至少两个电极之间施加偏压。电极以足够的电位形成靠近衬底边缘的第一电极区域，以电抛光衬底边缘，从而从衬底边缘去除导电层。具有比第一电极区域低的电位的第二电极区在处理期间靠近衬底面对准以使得衬底面的Ecmp能够被抑制。

87. 发明授权

US06841057B2 Method and apparatus for substrate polishing 失效
标题翻译：用于基板抛光的方法和装置
公开(公告)号：US06841057B2
公开(公告)日：2005-01-11
申请号：US10098796
申请日：2002-03-13
申请人： Ralph Wadensweiler , Alain Duboust , Liang-Yuh Chen , Manoocher Birang , Ratson Morad , Paul D. Butterfield
发明人： Ralph Wadensweiler , Alain Duboust , Liang-Yuh Chen , Manoocher Birang , Ratson Morad , Paul D. Butterfield
IPC分类号： B23H5/08 , C25F7/00 , C25F3/00 , C25C7/04 , C25D17/00
CPC分类号： B23H5/08 , C25F7/00
摘要： A method and apparatus are provided for polishing a substrate surface. In one aspect, an apparatus for polishing a substrate includes a conductive polishing pad and an electrode having a membrane disposed therebetween. The membrane is orientated relative the conductive pad in a manner that facilitates removal of entrained gas from electrolyte flowing towards the conductive pad. The apparatus may be part of an electro-chemical polishing station that may optionally be part of a system that includes chemical mechanical polishing stations.
摘要翻译：提供了一种用于抛光衬底表面的方法和装置。一方面，用于抛光衬底的装置包括导电抛光垫和在其间设置有膜的电极。膜以相对于导电垫的方向定向，以便于从电解液中流出的夹带气体去除导电垫。该设备可以是电化学抛光站的一部分，其可以可选地是包括化学机械抛光站的系统的一部分。

88. 发明授权

US06773507B2 Apparatus and method for fast-cycle atomic layer deposition 有权
标题翻译：用于快速循环原子层沉积的装置和方法
公开(公告)号：US06773507B2
公开(公告)日：2004-08-10
申请号：US10215068
申请日：2002-08-07
申请人： Ravi Jallepally , Shih-Hung Li , Alain Duboust , Jun Zhao , Liang-Yuh Chen , Daniel A. Carl
发明人： Ravi Jallepally , Shih-Hung Li , Alain Duboust , Jun Zhao , Liang-Yuh Chen , Daniel A. Carl
IPC分类号： C30B2504
CPC分类号： C30B25/14 , C23C16/45521 , C23C16/45544 , C23C16/45565 , Y10T117/1008
摘要： Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.
摘要翻译：用于通过原子层沉积沉积层的方法和装置。在基板支撑件和室之间建立虚拟浴帘，以使反应物分布的体积最小化。可以使用喷头来使衬底更靠近放置，进一步减小反应体积。零静态空间体积阀具有紧密放置在室盖和快速循环时间，也提高了工艺的循环时间。

89. 发明授权

US08694144B2 Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing 失效
标题翻译：在化学机械抛光中在同一台板上对不同厚度的多个基板进行端点控制
公开(公告)号：US08694144B2
公开(公告)日：2014-04-08
申请号：US12871714
申请日：2010-08-30
申请人： Alain Duboust , Stephen Jew , David H. Mai , Huyen Tran , Wen-Chiang Tu , Shih-Haur Shen , Jimin Zhang , Ingemar Carlsson , Boguslaw A. Swedek , Zhihong Wang
发明人： Alain Duboust , Stephen Jew , David H. Mai , Huyen Tran , Wen-Chiang Tu , Shih-Haur Shen , Jimin Zhang , Ingemar Carlsson , Boguslaw A. Swedek , Zhihong Wang
IPC分类号： G06F19/00
CPC分类号： B24B37/013 , B24B37/042 , B65B1/366 , G06F17/5086 , H01L21/30625 , H01L22/12 , H01L22/20 , H01L22/26
摘要： A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.
摘要翻译：第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力更大的预期需要的抛光时间。在初始周期之后，对第一基板和第二基板施加压力。

90. 发明申请

US20120118224A1 TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD 有权
标题翻译：用于改进设备输出的转换室规格
公开(公告)号：US20120118224A1
公开(公告)日：2012-05-17
申请号：US13230573
申请日：2011-09-12
申请人： David P. Bour , Alain Duboust , Alexey Goder
发明人： David P. Bour , Alain Duboust , Alexey Goder
IPC分类号： C30B25/16 , C30B25/08 , C30B25/10 , C23C16/06 , C23C16/52
CPC分类号： H01L33/0075 , C30B25/16 , C30B29/40 , G01K11/20 , G01K2217/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/67196 , H01L21/67248 , H01L22/12 , H01L22/26 , H01L33/0025 , H01L33/007 , H01L33/06 , H01L33/32 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.
摘要翻译：用于控制外延生长参数的设备和方法，例如在制造发光二极管（LED）期间。实施例包括生长后的III-V族薄膜的PL测量，而在高温下的基底处于多腔聚集工具的转移室中。在其它实施例中，在衬底设置在传送室中的同时，执行膜厚度测量，非接触电阻率测量以及颗粒和/或粗糙度测量。通过基于从设置在III-V族III膜以下的GaN基底层的发射来估计升高的温度，在传送室中执行的一个或多个测量值被温度校正到室温。在其他实施例中，温度校正基于由所收集的白光反射光谱确定的GaN基底层的吸收带边缘。然后使用温度校正计量来控制生长过程。

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