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81. 发明授权

US06361644B1 Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode 失效
标题翻译：平行板电极反应器具有通过平行板电极的感应天线耦合功率
公开(公告)号：US06361644B1
公开(公告)日：2002-03-26
申请号：US08936028
申请日：1997-09-23
申请人： Kenneth S. Collins
发明人： Kenneth S. Collins
IPC分类号： H01L2100
CPC分类号： H01J37/32458 , H01J37/321 , H01J37/32165 , H01J37/32467 , H01J37/32522 , H01J37/32871 , H01J2237/3345 , H01J2237/3346 , H01L21/6831
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor window, a base within the chamber for supporting the workpiece during processing thereof, a gas inlet system for admitting a plasma precursor gas into the chamber, and an inductive antenna adjacent a side of the semiconductor window opposite the base for coupling power into the interior of the chamber through the semiconductor window electrode.
摘要翻译：本发明由用于处理工件的等离子体反应器实现，包括限定处理室的反应器壳体，半导体窗口，用于在其处理期间支撑工件的室内的基座，用于将等离子体前体气体引入的气体入口系统所述腔室和靠近所述半导体窗口的与所述基座相对的一侧的感应天线，用于通过所述半导体窗口电极将功率耦合到所述腔室的内部。

82. 发明授权

US06193836B1 Center gas feed apparatus for a high density plasma reactor 失效
标题翻译：用于高密度等离子体反应器的中心供气装置
公开(公告)号：US06193836B1
公开(公告)日：2001-02-27
申请号：US09480313
申请日：2000-01-10
申请人： Jon Mohn , Mei Chang , Raymond Hung , Kenneth S. Collins , Ru-Liang Lee
发明人： Jon Mohn , Mei Chang , Raymond Hung , Kenneth S. Collins , Ru-Liang Lee
IPC分类号： H05H100
CPC分类号： H01J37/32449 , H01J37/321 , H01J37/3211 , H01J37/3222 , H01J37/32467 , Y10S156/914
摘要： The invention is embodied by a plasma reactor for processing a workpiece, including a reactor enclosure defining a processing chamber, a semiconductor ceiling window, a base within the chamber for supporting the workpiece during processing thereof, the semiconductor ceiling including a gas inlet system for admitting a plasma precursor gas into the chamber through the ceiling, and apparatus for coupling plasma source power into the chamber.
摘要翻译：本发明通过用于加工工件的等离子体反应器来实现，该等离子体反应器包括限定处理室的反应器壳体，半导体天花板窗，用于在其处理期间支撑工件的室内的基座，半导体天花板包括用于进入的气体入口系统通过天花板进入腔室的等离子体前体气体，以及用于将等离子体源功率耦合到腔室中的装置。

83. 发明授权

US6095083A Vacuum processing chamber having multi-mode access 失效
标题翻译：真空处理室具有多模式存取
公开(公告)号：US6095083A
公开(公告)日：2000-08-01
申请号：US892300
申请日：1997-07-14
申请人： Michael Rice , Eric Askarinam , Gerhard Schneider , Kenneth S. Collins
发明人： Michael Rice , Eric Askarinam , Gerhard Schneider , Kenneth S. Collins
IPC分类号： H01J37/32 , H01L21/311 , H01L21/683 , C23C16/00 , H05H1/00
CPC分类号： H01L21/31116 , C23C16/517 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/6831 , H01F2029/143 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346
摘要： The case of maintainability and component replacement for a vacuum processing chamber is enhanced by providing a vacuum chamber roof assembly whose connection to the vacuum chamber body is through a clamped connection. Accessories needed for the roof assembly, e.g. cooling, heating, RF power, are separately supported and terminated to an accessories supporting cold plate, which is separately mounted such it is easily movable, for example by hinging from the chamber body. The roof of the chamber can then easily be separated from the chamber body and replaced. In an further mode the chamber roof can be easily raised to provide easy access to modular components inside the processing chamber. All components exposed to the plasma in the chamber can be easily accessed and replaced. Moreover, such access is provided without the need to disconnect utilities or instrumentation, since the release of a latch and pivoting the cold plate assembly away from the chamber body upwards is all that is needed to gain access to either the top of the roof of the processing chamber or the inside of the chamber. Chamber roof cooling is provided through a separable connection which is spring clamped to provide a high confidence that uniform thermal conductivity across a clamped joint is maintained.
摘要翻译：通过提供真空室顶部组件来增强真空处理室的可维护性和部件更换的情况，真空室顶部组件与真空室主体的连接通过夹紧连接。屋顶组件所需的配件，例如冷却，加热，RF功率分别被支撑并终止于支撑冷板的附件，其被单独安装，例如通过从室主体铰接而易于移动。然后，室的屋顶可以容易地与室主体分离并被更换。在另外的模式中，可以容易地升高室顶，以便容易地进入处理室内的模块化部件。暴露于腔室中的等离子体的所有组件都可以轻松访问和更换。此外，由于释放闩锁并将冷板组件向上远离室体转动，因此提供了这种接入，而不需要断开连接器的使用或仪器，因为所有这些都需要进入屋顶的顶部处理室或室内。室顶冷却是通过弹簧夹紧的可分离连接来提供的，以提供保持夹紧接头两端的均匀热导率的高置信度。

84. 发明授权

US5849136A High frequency semiconductor wafer processing apparatus and method 失效
标题翻译：高频半导体晶片加工设备及方法
公开(公告)号：US5849136A
公开(公告)日：1998-12-15
申请号：US754833
申请日：1996-11-22
申请人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
发明人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
摘要翻译：能够显着地高于13.56MHz的等离子体处理装置可以产生被动电极的自偏置电压降低，以使得不会损害在高速和高密度集成电路中越来越普遍的薄层的较软工艺。使用非常规匹配网络来消除这些较高频率处的反射。匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

85. 发明授权

US5792562A Electrostatic chuck with polymeric impregnation and method of making 失效
公开(公告)号：US5792562A
公开(公告)日：1998-08-11
申请号：US372177
申请日：1995-01-12
申请人： Kenneth S. Collins , Joshua Chiu-Wing Tsui , Douglas Buchberger
发明人： Kenneth S. Collins , Joshua Chiu-Wing Tsui , Douglas Buchberger
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00 , B32B15/08
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00 , Y10S156/914 , Y10T279/23 , Y10T428/249955 , Y10T428/249956 , Y10T428/31699
摘要： An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

86. 发明授权

US5707486A Plasma reactor using UHF/VHF and RF triode source, and process 失效
标题翻译：使用UHF / VHF和RF三极管源的等离子体反应器和工艺
公开(公告)号：US5707486A
公开(公告)日：1998-01-13
申请号：US683125
申请日：1996-07-16
申请人： Kenneth S. Collins
发明人： Kenneth S. Collins
IPC分类号： H01J37/32 , B44C1/22 , C03C15/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32165
摘要： A plasma reactor preferably uses a split electrode which surrounds a plasma dome region of the reactor, is driven by high frequency energy selected from VHF and UHF and produces an electric field inside the electrode, parallel to the wafer support electrode. A static axial magnetic field may be used which is perpendicular to the electric field. The above apparatus generates a high density, low energy plasma inside a vacuum chamber for etching metals, dielectrics and semiconductor materials. Relatively lower frequency, preferably RF frequency, auxiliary bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various etch processes, deposition processes and combined etch/deposition processes (for example, sputter/facet deposition) are disclosed. The triode (VHF/UHF split electrode plus RF wafer support electrode) provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
摘要翻译：等离子体反应器优选使用围绕电抗器的等离子体圆顶区域的分离电极，其由选自VHF和UHF的高频能量驱动，并且在电极内部平行于晶片支撑电极产生电场。可以使用垂直于电场的静态轴向磁场。上述装置在用于蚀刻金属，电介质和半导体材料的真空室内产生高密度，低能量的等离子体。相对较低的频率，优选RF频率，施加到晶片支撑阴极的辅助偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺（例如，溅射/刻面沉积）。三极管（VHF / UHF分离电极加RF晶片支撑电极）提供敏感器件的处理，而不会损坏和无需微载物，从而提高产量。

87. 发明授权

US5684669A Method for dechucking a workpiece from an electrostatic chuck 失效
标题翻译：从静电卡盘上取出工件的方法
公开(公告)号：US5684669A
公开(公告)日：1997-11-04
申请号：US475368
申请日：1995-06-07
申请人： Kenneth S. Collins , Douglas Buchberger
发明人： Kenneth S. Collins , Douglas Buchberger
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00
摘要： A method of dechucking a workpiece from an electrostatic chuck. The method adaptively produces a dechucking voltage for canceling any unpredictable residual electrostatic fields between a workpiece and the electrostatic chuck. The method contains the steps of (a) applying a lifting force to the workpiece; (b) altering the chucking voltage; (c) measuring the lifting force; (d) comparing the measured lifting force to a threshold level; and, depending on the result of the comparison, either (e) maintaining the chucking voltage at its present level for a predefined period of time and physically dechucking the workpiece or (f) repeating steps (b), (c), (d) and (e).
摘要翻译：一种从静电吸盘去除工件的方法。该方法自适应地产生用于消除工件和静电卡盘之间的任何不可预测的残余静电场的解扣电压。该方法包括以下步骤：（a）将提升力施加到工件; （b）改变夹紧电压; （c）测量提升力; （d）将测量的提升力与阈值水平进行比较; （e）根据比较结果，（e）将夹持电压保持在其当前水平一段预定的时间段，并将工件物理地脱扣，或（f）重复步骤（b），（c），（d）和（e）。

88. 发明授权

US5618382A High-frequency semiconductor wafer processing apparatus and method 失效
标题翻译：高频半导体晶片加工装置及方法
公开(公告)号：US5618382A
公开(公告)日：1997-04-08
申请号：US83750
申请日：1993-06-25
申请人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
发明人： Donald M. Mintz , Hiroji Hanawa , Sasson Somekh , Dan Maydan , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/46 , H05H1/00
CPC分类号： H01J37/32174 , H01J37/32082 , H05H1/46 , Y10S148/051
摘要： A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
摘要翻译：等离子体处理装置的电容器操作明显高于13.56MHz可以产生被动电极的自偏压降低，以使得不会损坏在高速和高密度集成电路中越来越普遍的薄层的较软工艺。使用非常规匹配网络来消除这些较高频率处的反射。匹配网络组件的自动控制使得可以调整射频频率以点燃等离子体，然后以选定的可变频率工作，以最小化处理时间，而不会对集成电路造成显着损害。

89. 发明授权

US5574410A Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits 失效
公开(公告)号：US5574410A
公开(公告)日：1996-11-12
申请号：US336873
申请日：1994-11-09
申请人： Kenneth S. Collins , John Trow , Craig A. Roderick , Jay D. Pinson, II , Douglas A. Buchberger, II , Robert P. Hartlage , Viktor Shel
发明人： Kenneth S. Collins , John Trow , Craig A. Roderick , Jay D. Pinson, II , Douglas A. Buchberger, II , Robert P. Hartlage , Viktor Shel
IPC分类号： H01F21/02 , H01F29/14 , H01J37/32 , H01L21/311 , H03H7/38 , H03H7/40 , H03H11/30 , H03J3/22 , H05H1/46
CPC分类号： H01J37/32183 , H01F29/146 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J37/32871 , H01L21/31116 , H03H11/30 , H03H7/40 , H05H1/46 , H01F2029/143
摘要： The disclosure discusses impedance matching circuits based on parallel-resonant L-C tank circuits, and describes a low-loss design for an adjustable inductance element suitable for use in these parallel tank circuits. The application of an impedance matching circuit to a plasma process is also disclosed; in this context, a local impedance transformation circuit is used to improve power transfer to the plasma source antenna.

90. 发明申请

US20180374684A1 PROCESSING TOOL WITH ELECTRICALLY SWITCHED ELECTRODE ASSEMBLY 审中-公开
公开(公告)号：US20180374684A1
公开(公告)日：2018-12-27
申请号：US16015074
申请日：2018-06-21
申请人： Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice , Yue Guo
发明人： Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , Kallol Bera , James D. Carducci , Michael R. Rice , Yue Guo
IPC分类号： H01J37/32 , H01L21/02 , C23C16/455
摘要： A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.

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