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81. 发明授权

US08080280B1 Nanostructure templating using low temperature atomic layer deposition 有权
标题翻译：使用低温原子层沉积的纳米结构模板
公开(公告)号：US08080280B1
公开(公告)日：2011-12-20
申请号：US11872749
申请日：2007-10-16
申请人： Robert K. Grubbs , Gregory R. Bogart , John A. Rogers
发明人： Robert K. Grubbs , Gregory R. Bogart , John A. Rogers
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/45525
摘要： Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.
摘要翻译：描述了用于制备在所需高温下机械，化学和热稳定的纳米结构的方法，所述纳米结构具有的稳定性温度低于所需升高的温度。所述方法包括通过使用渐变温度沉积方案的模板将在期望的高温下稳定的原子层沉积（ALD）结构层沉积到模板上。至少一个结构层在小于或等于模板的稳定温度的初始温度下沉积，随后在逐渐增加的沉积温度下进行沉积，直至实现所需的高温稳定性。纳米结构模板包括通过接近场纳米图案（PnP）方法制造的具有大约100nm的特征的三维（3D）聚合物模板。

82. 发明授权

US07982296B2 Methods and devices for fabricating and assembling printable semiconductor elements 有权
标题翻译：用于制造和组装可印刷半导体元件的方法和装置
公开(公告)号：US07982296B2
公开(公告)日：2011-07-19
申请号：US12564566
申请日：2009-09-22
申请人： Ralph G. Nuzzo , John A. Rogers , Etienne Menard , Keon Jae Lee , Dahl-Young Khang , Yugang Sun , Matthew Meitl , Zhengtao Zhu
发明人： Ralph G. Nuzzo , John A. Rogers , Etienne Menard , Keon Jae Lee , Dahl-Young Khang , Yugang Sun , Matthew Meitl , Zhengtao Zhu
IPC分类号： H01L23/02
CPC分类号： H01L29/76 , B81C2201/0185 , B82Y10/00 , H01L21/02521 , H01L21/02603 , H01L21/02628 , H01L21/308 , H01L21/322 , H01L21/6835 , H01L23/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/80 , H01L24/83 , H01L24/94 , H01L24/97 , H01L25/0753 , H01L27/1285 , H01L27/1292 , H01L29/04 , H01L29/06 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/78603 , H01L29/78681 , H01L29/78696 , H01L31/0392 , H01L31/03926 , H01L31/1804 , H01L31/1864 , H01L31/1896 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L2221/68368 , H01L2221/68381 , H01L2224/03 , H01L2224/0332 , H01L2224/0345 , H01L2224/03614 , H01L2224/0362 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05644 , H01L2224/05666 , H01L2224/08225 , H01L2224/2919 , H01L2224/32225 , H01L2224/80 , H01L2224/80006 , H01L2224/80121 , H01L2224/80862 , H01L2224/80895 , H01L2224/83 , H01L2224/83005 , H01L2224/83121 , H01L2224/83192 , H01L2224/83193 , H01L2224/8385 , H01L2224/83862 , H01L2224/9202 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2924/00012 , H01L2924/01032 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15159 , H01L2924/15162 , H01L2924/15788 , H01L2924/1579 , Y02E10/547 , Y02P70/521 , Y10S977/707 , Y10S977/724 , H01L2924/00014 , H01L2924/00
摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
摘要翻译：本发明提供了用于制造可印刷半导体元件并将可印刷半导体元件组装到衬底表面上的方法和装置。本发明的方法，装置和装置部件能够在包含聚合物材料的基底上产生宽范围的灵活的电子和光电器件和器件阵列。本发明还提供了拉伸配置中能够具有良好性能的可拉伸半导体结构和可拉伸电子器件。

83. 发明授权

US07919172B2 Polymeric component bonding 有权
标题翻译：高分子结合
公开(公告)号：US07919172B2
公开(公告)日：2011-04-05
申请号：US10824331
申请日：2004-04-14
申请人： Olivier J. A. Schueller , David C. Duffy , John A. Rogers , Scott T. Brittain , George M. Whitesides
发明人： Olivier J. A. Schueller , David C. Duffy , John A. Rogers , Scott T. Brittain , George M. Whitesides
IPC分类号： B32B3/00 , B32B3/28 , B32B3/30 , B32B3/20 , B32B9/04
CPC分类号： B01L3/5027 , B01L3/502707 , B01L3/502715 , B01L2200/0689 , B01L2300/0654 , B01L2300/0861 , B01L2300/123 , B01L2400/0418 , G01N21/45 , G01N21/4788 , Y10T428/24562 , Y10T428/2457 , Y10T428/24744 , Y10T428/31663
摘要： A system is provided for positioning separate portions of a sample in elongate, parallel channels of a sample chamber and for irradiating a sample in the chamber to create a diffraction pattern where the sample and chamber differ in refractive index. The system also can measure absorption of electromagnetic radiation by a sample in the chamber, and can measure the absorption simultaneously with measurement of diffraction by the sample.
摘要翻译：提供了一种用于将样品的分离部分定位在样品室的细长平行通道中并用于在室中照射样品以产生样品和室的折射率不同的衍射图案的系统。该系统还可以测量室内样品对电磁辐射的吸收，并可以通过样品的衍射测量同时测量吸收。

84. 发明授权

US06975664B1 Article comprising a two-dimensional photonic crystal coupler and method of making the same 有权
标题翻译：本发明涉及一种二维光子晶体耦合器及其制造方法
公开(公告)号：US06975664B1
公开(公告)日：2005-12-13
申请号：US09480409
申请日：2000-01-11
申请人： Ananth Dodabalapur , Attila Mekis , John A. Rogers , Richart Elliott Slusher
发明人： Ananth Dodabalapur , Attila Mekis , John A. Rogers , Richart Elliott Slusher
IPC分类号： H01L33/00 , H01S3/06 , H01S3/0933 , H01S3/17 , H01S5/10 , H01S3/08 , G02B6/02
CPC分类号： H01S3/0933 , H01S3/17 , H01S3/178 , H01S5/105
摘要： A two-dimensional photonic crystal coupler is disclosed, together with a cross-coupled laser structure that is based on a two-dimensional photonic crystal coupler stage. Unlike traditional grating couplers, this two-dimensional photonic crystal coupler can couple light into a single or a plurality of discrete directions in the far-field, i.e., the output light may be unidirectional or discrete. The coupler can be integrated with one-dimensional lasers, a distributed feedback laser, a distributed Bragg reflector laser, and integrated on the same waveguide as the lasers. A resonant cavity coupler design improves the coupling efficiency of two-dimensional photonic crystal-based couplers.
摘要翻译：公开了一种二维光子晶体耦合器以及基于二维光子晶体耦合器级的交叉耦合激光器结构。与传统光栅耦合器不同，该二维光子晶体耦合器可将光耦合到远场中的单个或多个离散方向，即，输出光可以是单向的或离散的。耦合器可以与一维激光器，分布式反馈激光器，分布式布拉格反射器激光器集成在一起，并集成在与激光器相同的波导上。谐振腔耦合器设计提高了基于二维光子晶体的耦合器的耦合效率。

85. 发明授权

US06719868B1 Methods for fabricating microfluidic structures 有权
标题翻译：微流体结构的制造方法
公开(公告)号：US06719868B1
公开(公告)日：2004-04-13
申请号：US09425787
申请日：1999-10-22
申请人： Olivier J. A. Schueller , David C. Duffy , John A. Rogers , Scott T. Brittain , George M. Whitesides
发明人： Olivier J. A. Schueller , David C. Duffy , John A. Rogers , Scott T. Brittain , George M. Whitesides
IPC分类号： B32B3112
CPC分类号： B01L3/5027 , B01L3/502707 , B01L3/502715 , B01L2200/0689 , B01L2300/0654 , B01L2300/0861 , B01L2300/123 , B01L2400/0418 , G01N21/45 , G01N21/4788 , Y10T428/24562 , Y10T428/2457 , Y10T428/24744 , Y10T428/31663
摘要： A system is provided for positioning separate portions of a sample in elongate, parallel channels of a sample chamber and to irradiate a sample in the chamber to create a diffraction pattern where the sample and chamber differ in refractive index. The system also can measure absorption of electromagnetic radiation by a sample in the chamber, and can measure the absorption simultaneously with measurement of diffraction by the sample.
摘要翻译：提供了一种系统，用于将样品的分离部分定位在样品室的细长的平行通道中，并且在室中照射样品以产生样品和室的折射率不同的衍射图案。该系统还可以测量室内样品对电磁辐射的吸收，并可以通过样品的衍射测量同时测量吸收。

86. 发明授权

US06348967B1 Method and device for measuring the thickness of opaque and transparent films 失效
标题翻译：用于测量不透明和透明膜厚度的方法和装置
公开(公告)号：US06348967B1
公开(公告)日：2002-02-19
申请号：US09568931
申请日：2000-05-11
申请人： Keith A. Nelson , John A. Rogers , Matthew J. Banet , John Hanselman , Martin Fuchs
发明人： Keith A. Nelson , John A. Rogers , Matthew J. Banet , John Hanselman , Martin Fuchs
IPC分类号： G01N2100
CPC分类号： G01N21/1702 , G01B11/0666 , G01N21/636 , G01N29/2418 , G01N29/449 , G01N33/44 , G01N2291/0423
摘要： A method for determining the thickness of a thin sample is described. The method includes the step of exciting time-dependent acoustic waveguide modes in the sample with an excitation radiation field. The acoustic waveguide modes are detected by diffracting probe radiation off a ripple morphology induced on the sample's surface by the acoustic waveguide modes. The diffracted probe radiation is then analyzed to measure phase velocities or frequencies of the acoustic waveguide modes. A thickness of the thin sample is determined by comparing the measured phase velocities or frequencies to the phase velocities or frequencies calculated from a mathematical model.
摘要翻译：描述了用于确定薄样品的厚度的方法。该方法包括利用激发辐射场激发样品中与时间相关的声波导模式的步骤。通过声波导模式将探针辐射从样品表面感应出的波纹形态衍射出来，来检测声波导模式。然后分析衍射探针辐射以测量声波导模式的相速度或频率。通过将测量的相速度或频率与从数学模型计算的相速度或频率进行比较来确定薄样品的厚度。

87. 发明授权

US06256100B1 Method and device for measuring the thickness of thin films near a sample's edge and in a damascene-type structure 失效
标题翻译：用于测量样品边缘和镶嵌型结构附近薄膜厚度的方法和装置
公开(公告)号：US06256100B1
公开(公告)日：2001-07-03
申请号：US09067411
申请日：1998-04-27
申请人： Matthew J. Banet , Martin Fuchs , John A. Rogers
发明人： Matthew J. Banet , Martin Fuchs , John A. Rogers
IPC分类号： G01N2184
CPC分类号： G01B11/0666
摘要： A method for measuring a structure that contains overlying and underlying films in a region where the overlying film's thickness rapidly decreases until the underlying film is exposed (e.g., an edge-exclusion structure). The method includes the steps of: (1) exciting acoustic modes in a first portion of the region with at least one excitation laser beam; (2) detecting the acoustic modes with a probe laser beam that is either reflected or diffracted to generate a signal beam; (3) analyzing the signal beam to determine a property of the structure (e.g., the thickness of the overlying layer) in the first portion of the region; (4) translating the structure or the excitation and probe laser beams; and (5) repeating the exciting, detecting, and analyzing steps to determine a property of the structure in a second portion of the region.
摘要翻译：一种用于测量在覆盖膜的厚度迅速减小直到底层膜暴露的区域（例如，边缘排除结构）中的覆盖和下层膜的结构的测量方法。该方法包括以下步骤：（1）利用至少一个激发激光束激发该区域的第一部分中的声模; （2）用反射或衍射的探针激光束检测声学模式以产生信号光束; （3）分析信号光束以确定该区域的第一部分中的结构的性质（例如，上覆层的厚度）; （4）平移结构或激发和探测激光束; 和（5）重复激励，检测和分析步骤以确定该区域的第二部分中的结构的属性。

88. 发明授权

US06252253B1 Patterned light emitting diode devices 失效
标题翻译：图案化的发光二极管器件
公开(公告)号：US06252253B1
公开(公告)日：2001-06-26
申请号：US09095236
申请日：1998-06-10
申请人： Zhenan Bao , John A. Rogers
发明人： Zhenan Bao , John A. Rogers
IPC分类号： H01L3300
CPC分类号： H01L51/5036 , H01L27/3239 , H01L51/0003 , H01L51/5225 , H01L51/5281 , H01L51/56
摘要： An LED device that emits light in a pattern is disclosed. The LED device is a layer of active material that is sandwiched between a transparent substrate with an anode formed thereon and a cathode. The active material has a layer of light emitting material that emits light when electron/hole recombination is induced in the material. The patterned emission is defined by a patterned layer in the active material of the LED device. The patterned layer has at least a first thickness and a second thickness. When the device is on, the portion of the device associated with the first thickness of the patterned layer is visually distinct from the portion of the device that is associated with the second thickness of the patterned layer.
摘要翻译：公开了以图案发光的LED装置。 LED装置是夹在其上形成有阳极的透明基板和阴极之间的活性材料层。活性材料具有在材料中诱发电子/空穴复合时发光的发光材料层。图案化发射由LED器件的活性材料中的图案化层限定。图案化层具有至少第一厚度和第二厚度。当器件接通时，与图案化层的第一厚度相关联的器件的部分在视觉上不同于与图案化层的第二厚度相关联的器件的部分。

89. 发明授权

US6118533A Method and apparatus for measuring the concentration of ions implanted in semiconductor materials 失效
标题翻译：测量注入半导体材料的离子浓度的方法和装置
公开(公告)号：US6118533A
公开(公告)日：2000-09-12
申请号：US926850
申请日：1997-09-10
申请人： Matthew J. Banet , John A. Rogers , Martin Fuchs
发明人： Matthew J. Banet , John A. Rogers , Martin Fuchs
IPC分类号： G01N29/00 , G01B9/02 , G01N21/00 , G01N21/17 , G01N21/45 , H01L21/66
CPC分类号： G01N21/1717 , G01N21/17
摘要： A method and apparatus that determines a concentration of ions implanted in a material is described. The method includes the steps of: 1) generating at least two excitation laser sub-pulses and a probe pulse from a single pulse emitted from a laser; 2) irradiating a region of the material with a grating pattern formed by overlapping at least two excitation laser sub-pulses to initiate a time-dependent response in the region; 3) diffracting a probe laser pulse off the region to generate at least one time-dependent signal beam; 4) detecting at least one time-dependent signal beam to generate a signal waveform; and 5) processing the signal waveform to determine the concentration of ions implanted in the material.
摘要翻译：描述了确定植入材料中的离子的浓度的方法和装置。该方法包括以下步骤：1）从激光器发射的单个脉冲产生至少两个激发激光子脉冲和探针脉冲; 2）用通过重叠至少两个激发激光子脉冲形成的光栅图案来照射材料的区域以在该区域中引发时间依赖性响应; 3）将探测激光脉冲衍射出该区域以产生至少一个时间依赖信号光束; 4）检测至少一个时间相关的信号波束以产生信号波形; 和5）处理信号波形以确定植入材料中的离子的浓度。

90. 发明授权

US06081330A Method and device for measuring the thickness of opaque and transparent films 失效
公开(公告)号：US06081330A
公开(公告)日：2000-06-27
申请号：US157005
申请日：1998-09-18
申请人： Keith A. Nelson , John A. Rogers , Matthew J. Banet , John Hanselman , Martin Fuchs
发明人： Keith A. Nelson , John A. Rogers , Matthew J. Banet , John Hanselman , Martin Fuchs
IPC分类号： B82B1/00 , G01B11/06 , G01N21/17 , G01N21/63 , G01N29/24 , G01N33/44 , G01J3/30
CPC分类号： G01N21/1702 , G01B11/0666 , G01N21/636 , G01N29/2418 , G01N29/449 , G01N2291/0423 , G01N33/44
摘要： A method for determining the thickness of a thin sample is described. The method includes the step of exciting time-dependent acoustic waveguide modes in the sample with an excitation radiation field. The acoustic waveguide modes are detected by diffracting probe radiation off a ripple morphology induced on the sample's surface by the acoustic waveguide modes. The diffracted probe radiation is then analyzed to measure phase velocities or frequencies of the acoustic waveguide modes. A thickness of the thin sample is determined by comparing the measured phase velocities or frequencies to the phase velocities or frequencies calculated from a mathematical model.

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