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    • 3. 发明授权
    • Method and device for measuring the thickness of thin films near a sample's edge and in a damascene-type structure
    • 用于测量样品边缘和镶嵌型结构附近薄膜厚度的方法和装置
    • US06734982B2
    • 2004-05-11
    • US09795015
    • 2001-02-28
    • Matthew J. BanetMartin FuchsJohn A. Rogers
    • Matthew J. BanetMartin FuchsJohn A. Rogers
    • G01B1106
    • G01B11/0666
    • A method for measuring a structure that contains overlying and underlying films in a region where the overlying film's thickness rapidly decreases until the underlying film is exposed (e.g., an edge-exclusion structure). The method includes the steps of: (1) exciting acoustic modes in a first portion of the region with at least one excitation laser beam; (2) detecting the acoustic modes with a probe laser beam that is either reflected or diffracted to generate a signal beam; (3) analyzing the signal beam to determine a property of the structure (e.g., the thickness of the overlying layer) in the first portion of the region; (4) translating the structure or the excitation and probe laser beams; and (5) repeating the exciting, detecting, and analyzing steps to determine a property of the structure in a second portion of the region.
    • 一种用于测量在覆盖膜的厚度迅速减小直到底层膜暴露的区域(例如,边缘排除结构)中的覆盖和下层膜的结构的测量方法。 该方法包括以下步骤:(1)利用至少一个激发激光束激发该区域的第一部分中的声模; (2)用反射或衍射的探针激光束检测声学模式以产生信号光束; (3)分析信号光束以确定该区域的第一部分中的结构的性质(例如,上覆层的厚度); (4)平移结构或激发和探测激光束; 和(5)重复激励,检测和分析步骤以确定该区域的第二部分中的结构的属性。
    • 4. 发明授权
    • Method and apparatus for measuring material properties using transient-grating spectroscopy
    • 使用瞬态光栅光谱测量材料性质的方法和装置
    • US06175421B1
    • 2001-01-16
    • US09318323
    • 1999-05-25
    • Martin FuchsJohn A. RogersMatthew J. Banet
    • Martin FuchsJohn A. RogersMatthew J. Banet
    • G01B1102
    • G01B11/0666G01B11/06G01B21/085G01N21/1717G01N21/636
    • The invention provides an apparatus for measuring a property of a sample (using, e.g., ISTS) that includes: 1) an excitation laser that generates an excitation laser beam; 2) an optical system aligned along an optical axis that separates the excitation laser beam into at least three sub-beams; 3) an imaging system aligned along the optical axis that collects the sub-beams and focuses them onto the sample to form an optical interference pattern that generates a time-dependent response in the sample; 4) a probe laser that generates a probe laser beam that diffracts off the time-dependent response to form a signal beam; 5) a detector that detects the signal beam and in response generates a radiation-induced electronic response; and 6) a processor that processes the radiation-induced electronic response to determine the property of the sample.
    • 本发明提供一种用于测量样品(使用例如ISTS)的性质的装置,其包括:1)产生激发激光束的激发激光; 2)沿着光轴对准的光学系统,其将激发激光束分离成至少三个子光束; 3)沿着光轴对准的成像系统,其收集子光束并将它们聚焦到样品上以形成在样品中产生时间依赖性响应的光学干涉图案; 4)探测激光器,其产生衍射时间依赖响应以形成信号光束的探测激光束; 5)检测信号光束并作为响应的检测器产生辐射诱发的电子响应; 以及6)处理器,其处理辐射诱导的电子响应以确定样品的性质。
    • 5. 发明授权
    • Method and apparatus for measuring the concentration of ions implanted
in semiconductor materials
    • 测量注入半导体材料的离子浓度的方法和装置
    • US6052185A
    • 2000-04-18
    • US885786
    • 1997-06-30
    • Matthew J. BanetJohn A. RogersMartin Fuchs
    • Matthew J. BanetJohn A. RogersMartin Fuchs
    • G01N29/00G01B9/02G01N21/00G01N21/17G01N21/45H01L21/66
    • G01N21/1717G01N21/17
    • A method and apparatus that determines a concentration of ions implanted in a material is described. The method includes the steps of: (1) passing an excitation pulse through a diffracting mask (e.g., a phase or amplitude mask) to generate at least two excitation laser sub-pulses; (2) irradiating a region of the material with a grating pattern, formed by overlapping two excitation laser sub-pulses in time and space to initiate a time-dependent response (e.g., a change in refractive index) in the region; (3) diffracting a probe laser pulse having a duration that is at least long as the time-dependent response off the region to generate a time-dependent signal beam; (4) detecting the time-dependent signal beam to generate a signal waveform; and (5) processing the signal waveform to determine the concentration of ions implanted in the material.
    • 描述了确定植入材料中的离子的浓度的方法和装置。 该方法包括以下步骤:(1)使激发脉冲通过衍射掩模(例如,相位或幅度掩模)以产生至少两个激发激光子脉冲; (2)通过在时间和空间上重叠两个激发激光子脉冲而形成的光栅图案照射材料的区域以引发该区域中的时间依赖性响应(例如,折射率的变化); (3)将具有至少长度的持续时间的探针激光脉冲衍射出所述区域的时间依赖性响应以产生时间相关信号光束; (4)检测时间依赖信号光束以产生信号波形; 和(5)处理信号波形以确定植入材料中的离子的浓度。
    • 7. 发明授权
    • Method and device for measuring the thickness of thin films near a sample's edge and in a damascene-type structure
    • 用于测量样品边缘和镶嵌型结构附近薄膜厚度的方法和装置
    • US06256100B1
    • 2001-07-03
    • US09067411
    • 1998-04-27
    • Matthew J. BanetMartin FuchsJohn A. Rogers
    • Matthew J. BanetMartin FuchsJohn A. Rogers
    • G01N2184
    • G01B11/0666
    • A method for measuring a structure that contains overlying and underlying films in a region where the overlying film's thickness rapidly decreases until the underlying film is exposed (e.g., an edge-exclusion structure). The method includes the steps of: (1) exciting acoustic modes in a first portion of the region with at least one excitation laser beam; (2) detecting the acoustic modes with a probe laser beam that is either reflected or diffracted to generate a signal beam; (3) analyzing the signal beam to determine a property of the structure (e.g., the thickness of the overlying layer) in the first portion of the region; (4) translating the structure or the excitation and probe laser beams; and (5) repeating the exciting, detecting, and analyzing steps to determine a property of the structure in a second portion of the region.
    • 一种用于测量在覆盖膜的厚度迅速减小直到底层膜暴露的区域(例如,边缘排除结构)中的覆盖和下层膜的结构的测量方法。 该方法包括以下步骤:(1)利用至少一个激发激光束激发该区域的第一部分中的声模; (2)用反射或衍射的探针激光束检测声学模式以产生信号光束; (3)分析信号光束以确定该区域的第一部分中的结构的性质(例如,上覆层的厚度); (4)平移结构或激发和探测激光束; 和(5)重复激励,检测和分析步骤以确定该区域的第二部分中的结构的属性。
    • 10. 发明授权
    • Method and device for measuring thin films and semiconductor substrates using reflection mode geometry
    • 使用反射模式几何测量薄膜和半导体衬底的方法和装置
    • US06795198B1
    • 2004-09-21
    • US09087141
    • 1998-05-28
    • Martin FuchsMatthew J. BanetKeith A. NelsonJohn A. Rogers
    • Martin FuchsMatthew J. BanetKeith A. NelsonJohn A. Rogers
    • G01B902
    • G01N21/1717G01B11/0666G01N29/2418G01N2291/0423
    • The invention provides both a method and apparatus that measures a property of a structure that includes at least one layer. The apparatus features a laser (e.g., a microchip laser, described below) that generates an optical pulse, and a diffractive mask that receives the optical pulse and diffracts it to generate at least two excitation pulses. An optical system, (e.g., an achromat lens pair) receives the optical pulses and spatially and temporally overlaps them on or in the structure to form an excitation pattern that launches an acoustic wave. The acoustic wave modulates a property of the structure, e.g., it generates a time-dependent “surface ripple” or modulates an optical property such as the sample's refractive index or absorption coefficient. Surface ripple is defined as a time-dependent change in the morphology of the surface; its peak-to-null amplitude is typically a few angstroms or less. The apparatus also includes a light source that produces a probe beam that reflects off the modulated property to generate a signal beam. An optical detection system receives the reflected signal beam and in response generates a light-induced electrical signal. An analyzer analyzes the signal to measure the property of the structure.
    • 本发明提供了一种测量包括至少一层的结构的性质的方法和装置。 该装置具有产生光脉冲的激光器(例如,下面描述的微芯片激光器),以及接收光脉冲并衍射以产生至少两个激励脉冲的衍射掩模。 光学系统(例如,消色差透镜对)接收光学脉冲,并且在结构中或结构中空间和时间上重叠它们以形成发射声波的激发图案。 声波调制结构的性质,例如,其产生时间依赖性的“表面纹波”或调制光学特性,例如样品的折射率或吸收系数。 表面波纹定义为表面形态的时间依赖性变化; 其峰到零幅度通常为几埃或更小。 该装置还包括产生探测光束的光源,其反射出调制的特性以产生信号光束。 光学检测系统接收反射的信号光束,并且响应于产生光诱导的电信号。 分析仪分析信号以测量结构的性质。