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    • 72. 发明申请
    • DEVICE AND METHOD FOR CRYSTALLIZING INORGANIC OR ORGANIC SUBSTANCES
    • 用于结晶无机或有机物质的装置和方法
    • US20130199439A1
    • 2013-08-08
    • US13821053
    • 2011-09-15
    • Monika Spano
    • Monika Spano
    • C30B7/08
    • C30B7/08C30B7/00C30B29/54C30B29/58Y10T117/1004
    • A device for crystallising a molecule to be crystallised, which includes: at least one crystallisation cell that includes a crystallisation chamber for receiving a first solution S1 containing the molecule to be crystallised and the crystal seeds thereof, a dialysis membrane, and a container to be filled with a second solution S2 that contains constituents selected from the group containing crystallisation agents, additives and buffers; and at least one image acquisition means. The crystallisation device is characterized in that it includes: at least one addition means arranged to add, to the container, constituents selected from the group containing crystallisation agents, additives and buffers of solution S2; and/or at least one sampling means arranged to collect, from the container, all or a portion of solution S2. The invention also relates to a crystallisation method.
    • 一种用于使待结晶的分子结晶的装置,其包括:至少一个结晶池,其包括用于接收含有待结晶分子的第一溶液S1和其晶体种子的结晶室,透析膜和容器 填充含有选自含有结晶剂,添加剂和缓冲剂的组分的成分的第二溶液S2; 和至少一个图像获取装置。 结晶装置的特征在于其包括:至少一个添加装置,其被设置成向容器中添加选自含有结晶剂的组的组分,溶液S2的添加剂和缓冲剂; 和/或至少一个采样装置,其布置成从容器收集溶液S2的全部或一部分。 本发明还涉及一种结晶方法。
    • 74. 发明申请
    • Device for crystal growth at intermediate temperatures using controlled semi-active cooling
    • 使用受控半主动冷却在中间温度下晶体生长的装置
    • US20110203515A1
    • 2011-08-25
    • US12931288
    • 2011-01-29
    • Michael Krautter
    • Michael Krautter
    • C30B7/08C30B35/00B01F13/08
    • C30B7/08B01F13/0827B01F13/0872C30B29/14C30B35/00Y10T117/1008
    • A crystal growing cell which has computerized temperature control and agitation means to inhibit crystal nucleation. The temperature is controlled semi-actively, i.e., by monitoring the temperature with a thermistor and balancing ambient heat loss with heat added to the system by heating resistors or heating elements. When the chemical is completely dissolved by heating the mixture to a temperature above the saturation temperature, the temperature is lowered. At the saturation temperature the temperature is initially reduced slowly to avoid crystal nucleation. The saturation temperature of the initial solution is selected to be at an intermediate temperature which is high enough that the amount of dissolved material is large enough to produce a large crystal or large crystal clusters, yet not so high that the solubility curve has a large slope and therefore requires a high degree of temperature control to avoid crystal nucleation in the solution. Use of the cell with a variety of chemical solutions, each having the same saturation temperature, facilitates optimization while maintaining a simple, low cost design.
    • 具有计算机化的温度控制和搅拌的晶体生长池意味着抑制晶体成核。 半主动地控制温度,即通过用热敏电阻监测温度,并通过加热电阻或加热元件平衡环境热损失与加入系统的热量。 当化学品通过将混合物加热至高于饱和温度的温度完全溶解时,温度降低。 在饱和温度下,温度最初缓慢降低以避免晶体成核。 初始溶液的饱和温度选择为足够高的中间温度,使得溶解的材料的量足够大以产生大的晶体或大的晶体簇,但不太高,使得溶解度曲线具有大的斜率 因此需要高度的温度控制以避免溶液中的晶体成核。 使用具有各种具有相同饱和温度的各种化学溶液的电池便于优化,同时保持简单,低成本的设计。
    • 75. 发明申请
    • CRYSTAL GROWTH IN SOLUTION UNDER STATIC CONDITIONS
    • 在静态条件下的解决方案中的晶体生长
    • US20110142741A1
    • 2011-06-16
    • US12517928
    • 2007-12-03
    • Alain Jean Theodore IbanezJulien Raphael Zaccaro
    • Alain Jean Theodore IbanezJulien Raphael Zaccaro
    • C30B7/08C01B25/30
    • C30B7/08C30B29/14C30B35/00Y10T117/1024
    • A method for growing crystals in solution is suitable for the rapid, controlled and effective preparation of crystals of large dimensions from a solution supersaturated with a compound. The crystal growth is carried out under static conditions. To do this: the growth is performed in a crystallisation chamber kept at a constant temperature Tc, which chamber is in fluid communication with a saturation chamber at a temperature Ts, similarly constant and different from Tc, with solubility of the compound at the temperature Ts greater than the solubility of the compound at the temperature Tc. A continuous circulation of the solution between the crystallisation and saturation chambers is established, thus maintaining a constant supersaturation rate within the crystallisation chamber. Furthermore, the circulating solution is subjected to a treatment for eliminating and inhibiting the formation of aggregates, enabling the nucleation of parasitic crystallites to be inhibited.
    • 在溶液中生长晶体的方法适用于从化合物过饱和的溶液中快速,有控制和有效地制备大尺寸晶体。 晶体生长在静态条件下进行。 为了做到这一点:在保持恒温Tc的结晶室中进行生长,该室与饱和室在温度Ts下流动连通,温度Ts类似地恒定且不同于Tc,化合物在温度Ts下的溶解度 大于化合物在温度Tc下的溶解度。 建立溶液在结晶室和饱和室之间的连续循环,从而在结晶室内维持恒定的过饱和速率。 此外,对循环溶液进行消除和抑制聚集体形成的处理,能够抑制寄生微晶的成核。
    • 79. 发明授权
    • Synthesis of colloidal nanocrystals
    • 胶体纳米晶体的合成
    • US06872249B2
    • 2005-03-29
    • US09971780
    • 2001-10-04
    • Xiaogang PengZuoyan PengLianhua Qu
    • Xiaogang PengZuoyan PengLianhua Qu
    • C01B19/04C01B19/00C30B5/00C30B7/00H01L33/00H01L33/08H01L33/28C30B7/08
    • H01L33/08B82Y30/00C01B19/007C01P2002/84C01P2004/04C01P2004/64C30B5/00C30B7/00C30B29/605H01L33/0087H01L33/28
    • A method of synthesizing colloidal nanocrystals is disclosed using metal oxides or metal salts as a precursor. The metal oxides or metal salts are combined with a ligand and then heated in combination with a coordinating solvent. Upon heating, the metal oxides or salts are converted to stable soluble metal complexes. The metal complexes are formed by cationic species combining with the ligands and/or with the coordinating solvent. Finally, an elemental chalcogenic precursor, for example, Se, Te, or S, is introduced into the soluble metal complex to complete the formation of the nanocrystals at a controllable rate. High-quality CdSe, CdTe, and CdS nanocrystals are produced when CdO is used as the cadmium precursor. With the present method, the size, size distribution, and shape (dots or rods) of the resulting nanocrystals can be controlled during growth. For example, the resulting nanocrystals are nearly monodisperse without any size separation. Further, the method represents a major step towards a green chemistry approach for synthesizing high-quality semiconductor nanocrystals.
    • 公开了使用金属氧化物或金属盐作为前体的合成胶态纳米晶体的方法。 将金属氧化物或金属盐与配体结合,然后与配位溶剂组合加热。 加热时,金属氧化物或盐转化为稳定的可溶性金属配合物。 金属络合物由与配体和/或配位溶剂结合的阳离子物质形成。 最后,将元素硫属前体,例如Se,Te或S引入到可溶性金属络合物中,以可控速率完成纳米晶体的形成。 当CdO用作镉前体时,产生了高质量的CdSe,CdTe和CdS纳米晶体。 使用本方法,可以在生长期间控制所得纳米晶体的尺寸,尺寸分布和形状(点或棒)。 例如,所得到的纳米晶体几乎是单分散的,没有任何尺寸的分离。 此外,该方法代表了用于合成高质量半导体纳米晶体的绿色化学方法的主要步骤。