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    • 9. 发明授权
    • Magnetoresistive read transducer
    • 磁阻读取传感器
    • US5958612A
    • 1999-09-28
    • US972924
    • 1997-11-18
    • Mikiko SaitoHiroyuki Sato
    • Mikiko SaitoHiroyuki Sato
    • G11B5/31G11B5/39G11B5/40G11B5/66
    • G11B5/3903G11B5/3133G11B5/40Y10S428/90Y10T428/1107Y10T428/1143Y10T428/265
    • For providing a magnetoresistive read transducer capable of increasing the output by the increase of current, reduced with noises and having a durability, a magnetoresistive read transducer comprising a substrate and laminated thereon, a lower shield, a first gap layer, a thin film magnetoresistive element portion, a longitudinal bias layer, an electrode portion and an upper shield, each in a predetermined pattern successively, in which the entire resistance value of the electric conduction including the contact resistance of the electrode portion 7 is set within 1.2 times of a theoretical resistance value calculated based on the specific resistivity of the layer, in which a polysilicon layer is laminated between the magneto resistive film and the longitudinal bias layer.
    • 为了提供能够通过增加电流而增加输出的磁阻读取传感器,减少噪声并具有耐用性,包括基板并层压在其上的磁阻读取换能器,下屏蔽,第一间隙层,薄膜磁阻元件 部分,纵向偏置层,电极部分和上屏蔽层,每个以预定图案连续,其中包括电极部分7的接触电阻的导电的整个电阻值被设置在理论电阻的1.2倍内 基于层的比电阻率计算出的值,其中在电阻膜和纵向偏置层之间层叠多晶硅层。