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71. 发明申请

US20100092175A1 REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL SIGNAL PROCESSING METHOD USING THE SAME 有权
标题翻译：使用它的反射半导体光放大器和光信号处理方法
公开(公告)号：US20100092175A1
公开(公告)日：2010-04-15
申请号：US12367431
申请日：2009-02-06
申请人： Hyun Soo KIM , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
发明人： Hyun Soo KIM , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
IPC分类号： H04J14/02 , H01S3/16
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06258 , H01S5/1014 , H01S5/509
摘要： Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.
摘要翻译：提供了一种半导体光放大器和使用其的光信号处理方法。反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

72. 发明申请

US20090245298A1 HYBRID SILICON LASER-QUANTUM WELL INTERMIXING WAFER BONDED INTEGRATION PLATFORM FOR ADVANCED PHOTONIC CIRCUITS WITH ELECTROABSORPTION MODULATORS 有权
标题翻译：混合硅激光器与电解质调制器相结合的先进光电子电路
公开(公告)号：US20090245298A1
公开(公告)日：2009-10-01
申请号：US12355628
申请日：2009-01-16
申请人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
发明人： Matthew N. Sysak , John E. Bowers , Alexander W. Fang , Hyundai Park
IPC分类号： H01S5/026 , H01L33/00 , H01S3/10
CPC分类号： H01S5/0265 , B82Y20/00 , H01S5/021 , H01S5/0215 , H01S5/0217 , H01S5/026 , H01S5/06256 , H01S5/1014 , H01S5/1032 , H01S5/1209 , H01S5/3414
摘要： Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.
摘要翻译：公开了硅上的光子集成电路。通过将作为有源区的化合物半导体材料的晶片结合到硅并去除衬底，可以使用硅衬底上的标准光刻技术来处理激光器，放大器，调制器和其它器件。根据本发明的一个或多个实施例的硅激光器混合集成器件包括绝缘体上硅衬底，其包括顶表面中的至少一个波导，以及包括增益层的化合物半导体衬底，化合物半导体衬底进行量子阱混合处理，其中化合物半导体衬底的上表面结合到绝缘体上硅衬底的顶表面上。

73. 发明申请

US20090225801A1 SEMICONDUCTOR OPTICAL ELEMENT AND EXTERNAL CAVITY LASER HAVING THE SEMICONDUCTOR OPTICAL ELEMENT 失效
标题翻译：具有半导体光学元件的半导体光学元件和外部光圈激光
公开(公告)号：US20090225801A1
公开(公告)日：2009-09-10
申请号：US12067601
申请日：2006-09-27
申请人： Hiroshi Mori , Atsushi Yamada , Takahiro Samejima
发明人： Hiroshi Mori , Atsushi Yamada , Takahiro Samejima
IPC分类号： H01S3/13 , G02B6/12
CPC分类号： H01S5/227 , H01L33/0045 , H01S5/02284 , H01S5/101 , H01S5/1014 , H01S5/1032 , H01S5/1085 , H01S5/14 , H01S5/141 , H01S5/142 , H01S5/143 , H01S5/146
摘要： The present invention provides a semiconductor optical element applicable to an EC-LD or an SLD, and an external cavity laser having the semiconductor optical element. The semiconductor optical element has a pair of cleavage surfaces, and comprises a semiconductor substrate 11 having a base surface and a planer structure provided on the base surface and provided with a waveguide 1G having an active layer. The waveguide 1G has an end surface with low reflectivity and another end surface with certain reflectivity. The waveguide 1G includes an end portion having a first optical axis in the vicinity of the first end surface 1TL and an end portion having a second optical axis in the vicinity of the second end surface 1TH, the first optical axis being inclined at a first angle ΦL other than zero degree with respect to a normal to the first end surface 1TL, the second optical axis being inclined at a second angle ΦH other than zero degree with respect to a normal to the second end surface 1TH, the first angle ΦL being different from the second angle ΦH. The end portion of the waveguide 1G is different in width from the other end portion of the waveguide 1G.
摘要翻译：本发明提供一种适用于EC-LD或SLD的半导体光学元件和具有该半导体光学元件的外部空腔激光器。半导体光学元件具有一对解理面，并且包括具有基面的半导体基板11和设置在基面上的平面结构，并设置有具有有源层的波导管1G。波导1G具有低反射率的端面和具有一定反射率的另一端面。波导管1G包括在第一端面1TL附近具有第一光轴的端部和在第二端面1TH附近具有第二光轴的端部，第一光轴以第一角度倾斜 PhiL相对于第一端面1TL的法线为零度以外，第二光轴相对于第二端面1TH的法线倾斜成零度以外的第二角度PhiH，第一角度PhiL不同从第二角度PhiH。波导1G的端部宽度与波导管1G的另一端部不同。

74. 发明授权

US07561608B2 Semiconductor laser element 失效
标题翻译：半导体激光元件
公开(公告)号：US07561608B2
公开(公告)日：2009-07-14
申请号：US11515825
申请日：2006-09-06
申请人： Tadashi Takase
发明人： Tadashi Takase
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/1014 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/209 , H01S5/22 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/3211 , H01S5/3421 , H01S5/3432 , H01S5/34326 , H01S5/3436 , H01S2301/185
摘要： A semiconductor laser element including a ridge extending along a laser output direction of the laser element. The ridge has a central portion, two peripheral portions sandwiching the central portion, and two transitional portions. Window regions that are non-gain regions are located in corresponding peripheral portions. A difference in an equivalent refractive index between the central portion of the ridge and the peripheral portions on both sides is larger than a difference in an equivalent refractive index between the central portion of the ridge and transitional portions on both sides of the central portion in a gain region.
摘要翻译：一种半导体激光元件，包括沿激光元件的激光输出方向延伸的脊。脊具有中心部分，夹在中心部分的两个周边部分和两个过渡部分。作为非增益区域的窗口区域位于相应的外围部分中。脊的中心部分和两侧的周边部分之间的等效折射率的差异大于脊的中心部分与中心部分两侧的过渡部分之间的等效折射率之差增益区域。

75. 发明授权

US07558306B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07558306B2
公开(公告)日：2009-07-07
申请号：US11134519
申请日：2005-05-23
申请人： Masanori Watanabe , Shinichi Kawato , Mitsuhiro Matsumoto
发明人： Masanori Watanabe , Shinichi Kawato , Mitsuhiro Matsumoto
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/1014 , H01S5/1039 , H01S5/162 , H01S5/168 , H01S5/2022 , H01S5/2214 , H01S5/2219 , H01S5/3211 , H01S5/34326 , H01S5/3436 , H01S2301/18
摘要： In a semiconductor laser device of the invention, a ridge portion 150 forms a waveguide, and guided light goes along the ridge portion 150. A tail of the guided layer is present also at first side portions 151, while second side portions 152 are regions which the tail of the guided light does not reach. Meanwhile, scattered light generated from the ridge portion 150 goes through the first side portions 15, spreading into the second side portions 152. In the second side portions 152, a light absorption layer 127 serving as a light absorber is formed on the first upper clad layer 108, where the scattered light is absorbed. As a result of the absorption of scattered light in the second side portions 152, ripples of radiation light are reduced. Also since the light absorption layer 127 is in electrical contact with a p-side ohmic electrode 125, the problem of charge accumulation to the light absorption layer 127 can be avoided.
摘要翻译：在本发明的半导体激光装置中，脊部150形成波导管，导光部沿着脊部150延伸。被引导层的尾部也存在于第一侧部151，而第二侧部152是引导灯的尾巴没有达到。同时，从脊部150产生的散射光穿过第一侧部15，扩展到第二侧部152.在第二侧部152中，作为光吸收体的光吸收层127形成在第一上部包层层108，其中散射的光被吸收。作为第二侧部152中散射光的吸收的结果，辐射光的波纹减小。此外，由于光吸收层127与p侧欧姆电极125电接触，因此可以避免对光吸收层127的电荷积聚的问题。

76. 发明授权

US07466736B2 Semiconductor laser diode, semiconductor optical amplifier, and optical communication device 失效
标题翻译：半导体激光二极管，半导体光放大器和光通讯器件
公开(公告)号：US07466736B2
公开(公告)日：2008-12-16
申请号：US11573625
申请日：2005-06-29
申请人： Kiichi Hamamoto , Jan De Merlier
发明人： Kiichi Hamamoto , Jan De Merlier
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/028 , H01S5/0655 , H01S5/1003 , H01S5/1014 , H01S5/1039 , H01S5/1064 , H01S5/2206 , H01S5/2222 , H01S5/34306 , H01S5/50
摘要： To provide a semiconductor laser diode and a semiconductor optical amplifier and an optical communication device incorporating the semiconductor laser diode or the semiconductor optical amplifier which enable low power consumption and high optical output. A semiconductor laser diode according to an embodiment of the present invention is a semiconductor laser diode 100 comprised of an active waveguide, the active waveguide including a first waveguide 11a that supplies a plurality of modes including a fundamental mode; and a second waveguide 12a that is wider than the first waveguide 11a and supplies a multimode, wherein the fundamental mode is provided as an oscillation light oscillated from the active waveguide.
摘要翻译：提供半导体激光二极管和半导体光放大器以及结合半导体激光二极管或半导体光放大器的光通信装置，其能够实现低功耗和高光输出。根据本发明的实施例的半导体激光二极管是由有源波导构成的半导体激光二极管100，该有源波导包括提供包括基本模式在内的多个模式的第一波导11a; 以及比第一波导11a宽的第二波导12a，并且提供多模，其中基模作为从有源波导振荡的振荡光提供。

77. 发明授权

US07394841B1 Light emitting device for visual applications 有权
标题翻译：用于视觉应用的发光装置
公开(公告)号：US07394841B1
公开(公告)日：2008-07-01
申请号：US11654557
申请日：2007-01-18
申请人： Janne Konttinen , Pietari Tuomisto , Tomi Jouhti
发明人： Janne Konttinen , Pietari Tuomisto , Tomi Jouhti
IPC分类号： H01S5/00
CPC分类号： H01S5/026 , G02F1/3501 , G02F1/37 , G02F2001/3503 , G03B21/2013 , G03B21/204 , G03B21/208 , H01S3/109 , H01S5/005 , H01S5/0071 , H01S5/0092 , H01S5/02292 , H01S5/0267 , H01S5/0604 , H01S5/06256 , H01S5/065 , H01S5/1014 , H01S5/1085 , H01S5/141 , H01S5/18 , H01S5/4012 , H01S5/42 , H04N9/3161
摘要： A light emitting device comprises a waveguide having an electrically pumped gain region, a nonlinear medium, and an inclined mirror. Light pulses emitted from the gain region are reflected by the inclined mirror into the nonlinear medium in order to generate frequency-doubled light pulses. The gain region and the inclined mirror are implemented on the same substrate. The resulting structure is stable and compact, and allows on-wafer testing of produced emitters. The folded structure allows easy alignment of the nonlinear crystal.
摘要翻译：发光器件包括具有电泵浦增益区域，非线性介质和倾斜镜的波导。从增益区发射的光脉冲被倾斜镜反射到非线性介质中，以便产生倍频的光脉冲。增益区域和倾斜反射镜被实施在相同的基板上。所得到的结构是稳定和紧凑的，并允许对生产的发射体进行片上测试。折叠结构允许非线性晶体的容易对准。

78. 发明申请

US20080037605A1 OPTICAL WAVEGUIDE, SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT, AND METHODS FOR MANUFACTURING THE SAME 有权
标题翻译：光波导，半导体光学集成元件及其制造方法
公开(公告)号：US20080037605A1
公开(公告)日：2008-02-14
申请号：US11775928
申请日：2007-07-11
申请人： Takeshi Yamatoya , Yasunori Miyazaki , Toshitaka Aoyagi
发明人： Takeshi Yamatoya , Yasunori Miyazaki , Toshitaka Aoyagi
IPC分类号： H01S5/026
CPC分类号： H01S5/026 , B82Y20/00 , H01S5/0265 , H01S5/1014 , H01S5/1032 , H01S5/22 , H01S5/3211 , H01S5/34306
摘要： An optical waveguide has a semiconductor laser section, an intermediate section, and an optical modulator section on a surface of a substrate. The distance of a surface extending outwardly from and transverse to both sides of a mesa stripe in the semiconductor laser section from the surface of the substrate is larger than the distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the optical modulator section from the surface of the substrate. The distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the intermediate section from the surface of the substrate decreases from the semiconductor laser section toward the optical modulator section.
摘要翻译：光波导在基板的表面上具有半导体激光部，中间部和光调制部。从半导体激光器部分的基板的台面条的两侧向外延伸的表面与基板的表面之间的距离大于沿着基板的台面条的两侧向外延伸的横截面的距离光学调制器部分。从中间部分的台阶条的两侧向外延伸的表面与基板的表面之间的距离从半导体激光部朝向光调制器部分减小。

79. 发明授权

US07301979B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07301979B2
公开(公告)日：2007-11-27
申请号：US10825407
申请日：2004-04-14
申请人： Keiji Ito , Isao Kidoguchi , Toru Takayama , Osamu Imafuji
发明人： Keiji Ito , Isao Kidoguchi , Toru Takayama , Osamu Imafuji
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0655 , H01S5/1014 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2301/18 , H01S2304/04
摘要： A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level. As a result, the semiconductor laser device can be provided so that stable laser oscillation in the fundamental transverse mode can be realized up to the time of a high optical output operation.
摘要翻译：本发明的半导体激光器件包括：第一导电型包覆层; 活性层和第二导电型包覆层。半导体激光装置还包括用于在其中注入载体的条纹结构。在发射激光的谐振器的前端面上的宽度比位于前端面相对侧的后端面宽，并且前端面的反射率较低比后端面的反射率高。利用这种配置，可以根据沿着半导体激光器内的谐振器方向的光强度分布来控制载流子进入有源层，从而实现阈值电流的降低，斜率效率的提高和扭结水平结果，可以提供半导体激光器件，使得可以在高光输出操作时实现在基本横向模式下的稳定的激光振荡。

80. 发明申请

US20070223549A1 High-Power Optoelectronic Device with Improved Beam Quality Incorporating A Lateral Mode Filtering Section 审中-公开
标题翻译：具有改进的光束质量的大功率光电子器件结合横向模式滤波部分
公开(公告)号：US20070223549A1
公开(公告)日：2007-09-27
申请号：US11277268
申请日：2006-03-23
申请人： Daniil Livshits , Alexey Kovsh , Alexey Zhukov
发明人： Daniil Livshits , Alexey Kovsh , Alexey Zhukov
IPC分类号： H01S5/00
CPC分类号： H01S5/026 , G02B6/1228 , H01S5/0265 , H01S5/028 , H01S5/0425 , H01S5/0625 , H01S5/0655 , H01S5/0657 , H01S5/1014 , H01S5/16 , H01S5/22 , H01S5/50 , H01S2301/18
摘要： An optoelectronic device includes a planar active element, a vertical waveguide surrounding the active element in the vertical direction, and a lateral waveguide comprising at least one active section and at least one filter section following each other in the longitudinal direction. At least part of the active element within the active section generates optical gain in response to above-threshold pumping. The broad lateral waveguide in the active section can localize multiple lateral optical modes. In the filter section, no lateral confinement is provided for the lateral optical modes. The device further comprises means to ensure low absorption loss in the filter section and, therefore, ensure high efficiency. In one embodiment low absorption loss is achieved by pumping of at least part of the active element within the filter section. In another embodiment, the active element has small overlap with the vertical optical modes.
摘要翻译：光电子器件包括平面有源元件，在垂直方向上围绕有源元件的垂直波导，以及横向波导，其包括至少一个有源部分和至少一个在纵向方向上相互依次的滤光器部分。有源部分内的有源元件的至少一部分响应于高于阈值的泵浦而产生光增益。有源部分中的宽横向波导可以定位多个横向光学模式。在滤波器部分中，没有为侧向光学模式提供侧向约束。该装置还包括确保过滤器部分中的低吸收损失并因此确保高效率的装置。在一个实施例中，通过泵送过滤器部分内的有源元件的至少一部分来实现低吸收损耗。在另一个实施例中，有源元件与垂直光学模式具有小的重叠。

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