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1. 发明授权

US07301979B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US07301979B2
公开(公告)日：2007-11-27
申请号：US10825407
申请日：2004-04-14
申请人： Keiji Ito , Isao Kidoguchi , Toru Takayama , Osamu Imafuji
发明人： Keiji Ito , Isao Kidoguchi , Toru Takayama , Osamu Imafuji
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0655 , H01S5/1014 , H01S5/2214 , H01S5/2231 , H01S5/34333 , H01S2301/18 , H01S2304/04
摘要： A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level. As a result, the semiconductor laser device can be provided so that stable laser oscillation in the fundamental transverse mode can be realized up to the time of a high optical output operation.
摘要翻译：本发明的半导体激光器件包括：第一导电型包覆层; 活性层和第二导电型包覆层。半导体激光装置还包括用于在其中注入载体的条纹结构。在发射激光的谐振器的前端面上的宽度比位于前端面相对侧的后端面宽，并且前端面的反射率较低比后端面的反射率高。利用这种配置，可以根据沿着半导体激光器内的谐振器方向的光强度分布来控制载流子进入有源层，从而实现阈值电流的降低，斜率效率的提高和扭结水平结果，可以提供半导体激光器件，使得可以在高光输出操作时实现在基本横向模式下的稳定的激光振荡。

2. 发明申请

US20100309941A1 SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20100309941A1
公开(公告)日：2010-12-09
申请号：US12715125
申请日：2010-03-01
申请人： Keiji Ito , Isao Kidoguchi , Toru Takayama
发明人： Keiji Ito , Isao Kidoguchi , Toru Takayama
IPC分类号： H01S5/343 , H01S5/40 , H01S5/34
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/1039 , H01S5/168 , H01S5/22 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element different in oscillation wavelength from the first semiconductor laser element, both formed on a substrate. The first and second semiconductor laser elements have a cavity length of 1500 μm or more, and each have an n-type cladding layer made of Iny(Ga1-x1Alx1)1-yP (0
摘要翻译：半导体激光装置包括形成在基板上的第一半导体激光元件和与第一半导体激光元件不同的振荡波长的第二半导体激光元件。第一半导体激光元件和第二半导体激光元件的空洞长度为1500μm以上，各自具有由Iny（Ga1-x1Alx1）1-yP（0

3. 发明申请

US20090074022A1 DUAL-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME 失效
标题翻译：双波长半导体激光器件及其制造方法
公开(公告)号：US20090074022A1
公开(公告)日：2009-03-19
申请号：US12166703
申请日：2008-07-02
申请人： Masahiro Kume , Toru Takayama , Shouichi Takasuka , Isao Kidoguchi
发明人： Masahiro Kume , Toru Takayama , Shouichi Takasuka , Isao Kidoguchi
IPC分类号： H01S5/026
CPC分类号： H01S5/4031 , H01S5/162 , H01S5/209 , H01S5/22 , H01S5/4087
摘要： In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.
摘要翻译：在其中将第一半导体激光元件和第二半导体激光元件集成到由化合物半导体制成的基板上的双波长半导体激光器中，第一半导体激光元件的蚀刻阻挡层的构成材料是允许扩散的材料的杂质比第二半导体激光元件的蚀刻停止体的构成材料容易。

4. 发明申请

US20070147457A1 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070147457A1
公开(公告)日：2007-06-28
申请号：US11510638
申请日：2006-08-28
申请人： Toru Takayama , Satoshi Murasawa , Yasuhiro Fujimoto , Hisashi Nakayama , Isao Kidoguchi
发明人： Toru Takayama , Satoshi Murasawa , Yasuhiro Fujimoto , Hisashi Nakayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译：在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。设置在有源层顶部的包层之一是具有台面脊部的上包层。用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。蚀刻阻挡层的厚度在发光元件之间变化。

5. 发明申请

US20070064752A1 Multi-wavelength semiconductor laser 有权
标题翻译：多波长半导体激光器
公开(公告)号：US20070064752A1
公开(公告)日：2007-03-22
申请号：US11501064
申请日：2006-08-09
申请人： Toru Takayama , Isao Kidoguchi , Takayuki Kashima
发明人： Toru Takayama , Isao Kidoguchi , Takayuki Kashima
IPC分类号： H01S3/10
CPC分类号： H01S5/40 , H01S5/162 , H01S5/22 , H01S5/4087
摘要： Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.
摘要翻译：用于各波长的半导体激光器具有不同长度的窗口区域，以获得用于各个波长的发射光的最佳FFP，因此对波长的依赖性可以相等于波长，从而有助于光学系统的设计。

6. 发明授权

US07860139B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07860139B2
公开(公告)日：2010-12-28
申请号：US12405656
申请日：2009-03-17
申请人： Toru Takayama , Koichi Hayakawa , Tomoya Satoh , Masatoshi Sasaki , Isao Kidoguchi
发明人： Toru Takayama , Koichi Hayakawa , Tomoya Satoh , Masatoshi Sasaki , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1064 , H01S5/34313 , H01S5/34326 , H01S5/4031 , H01S5/4087 , H01S2301/14
摘要： A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.
摘要翻译：半导体激光器件包括n型覆层，有源层和具有脊和翼区的p型覆盖层。翼部区域设置有在脊的一侧上存在的第一沟槽和在其另一侧上设置的第二沟槽。谐振器的前端面的反射率Rf，谐振器的后端面的反射率Rr，与前端面相邻的区域中的第一沟槽的宽度的最小值W1，最小值W2 在与前端面相邻的区域中的第二沟槽的宽度，后端面处的第一沟槽的宽度W3和后端面处的第二沟槽的宽度W4满足Rf Wr。脊部包括宽度随着从前端侧向后端侧的距离而减小的区域。

7. 发明授权

US07653104B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US07653104B2
公开(公告)日：2010-01-26
申请号：US12246859
申请日：2008-10-07
申请人： Yasuhiro Fujimoto , Tougo Nakatani , Toru Takayama , Isao Kidoguchi
发明人： Yasuhiro Fujimoto , Tougo Nakatani , Toru Takayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/3406 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/173
摘要： A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb
摘要翻译：红色激光部分和红外激光部分集成在n型GaAs衬底上。在红外激光部中由p型AlGaInP构成的p型覆层和在红外线激光部中由p型AlGaInP构成的p型覆层具有具有发光点的脊条部。在每个脊条部分的两侧形成由SiNx形成的电流阻挡层，并且在当前阻挡层上的每个脊条区域的外侧选择性地形成由ZrO 2制成的应变缓和层。假设Tc是p型覆层的热膨胀系数，Tb是当前阻挡层的热膨胀系数，Ts是应变缓和层的热膨胀系数，Tb

8. 发明授权

US07561609B2 Semiconductor laser device and method of fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07561609B2
公开(公告)日：2009-07-14
申请号：US11907016
申请日：2007-10-09
申请人： Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
发明人： Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/222 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.
摘要翻译：半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。第一腔包括第一缓冲层和包括第一有源层的第一半导体层，第二腔包括第二缓冲层和包括第二有源层的第二半导体层。在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。第一缓冲层的带隙大于第一缓冲层的带隙，第二缓冲层的带隙大于第二有源层的带隙。

9. 发明授权

US07433380B2 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07433380B2
公开(公告)日：2008-10-07
申请号：US11510638
申请日：2006-08-28
申请人： Toru Takayama , Satoshi Murasawa , Yasuhiro Fujimoto , Hisashi Nakayama , Isao Kidoguchi
发明人： Toru Takayama , Satoshi Murasawa , Yasuhiro Fujimoto , Hisashi Nakayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要： In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译：在半导体激光器件中，将发射不同波长的光的多个发光元件集成在基板上。每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。设置在有源层顶部的包层之一是具有台面脊部的上包层。用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。蚀刻阻挡层的厚度在发光元件之间变化。

10. 发明授权

US06909733B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06909733B2
公开(公告)日：2005-06-21
申请号：US09968942
申请日：2001-10-03
申请人： Katsuya Samonji , Toru Takayama , Osamu Imafuji , Masaaki Yuri
发明人： Katsuya Samonji , Toru Takayama , Osamu Imafuji , Masaaki Yuri
IPC分类号： H01S5/30 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/00
CPC分类号： H01S5/32308 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2206 , H01S5/221 , H01S5/2231 , H01S5/3213
摘要： A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1−x1As and a p-type cladding layer of (AlxGa1−x)yIn1−yP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.
摘要翻译：半导体激光器件包括在有源层的顶部上形成具有Al x 1 Ga 1-x As As的n型包覆层和（用于限定势垒高度的第1 -Y-P层中的至少一个。用于限定势垒高度的p型包覆层包含比n型包覆层更多的组成元素。用于限定势垒高度的p型覆层的导带边缘与有源层之间的电位差大于n型覆层和有源层的导带边缘之间的电位差。有源层中的载流子被阻止溢出到p型包覆层中，并且具有高导热性的材料用于n型包覆层以防止热饱和现象，从而提供改善的光输出。

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