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71. 发明授权

US07431838B2 Gas/ion species selective membrane support by multi-stage nano-hole array metal structure 失效
标题翻译：气/离子种选择性膜支持多级纳米孔阵列金属结构
公开(公告)号：US07431838B2
公开(公告)日：2008-10-07
申请号：US11502140
申请日：2006-08-09
申请人： Sangkyun Kang , Yong-Il Park , Friedrich B. Prinz , Suk-Won Cha , Yuji Saito , Ali Farvid , Pei-Chen Su
发明人： Sangkyun Kang , Yong-Il Park , Friedrich B. Prinz , Suk-Won Cha , Yuji Saito , Ali Farvid , Pei-Chen Su
IPC分类号： B01D39/00 , B01D17/00 , B01D24/00 , B01D63/00 , B32B15/00
CPC分类号： B01D53/228 , B01D67/0062 , B01D69/02 , B01D69/10 , B01D71/022 , B01D71/024 , B01D2325/02 , B01D2325/04 , H01M4/861 , H01M4/8657 , H01M4/92 , H01M8/1226 , Y10T428/12028 , Y10T428/2944 , Y10T428/31678
摘要： An improved two-step replication process for fabrication of porous metallic membranes is provided. A negative of a porous non-metallic template is made by infiltration of a liquid precursor into the template, curing the precursor to form a solid negative, and removing the template to expose the negative. Metal is deposited to surround the exposed negative. Removal of the negative provides a porous metallic membrane having pores which replicate the pores of the original template membrane. The negative is kept immersed in a liquid at all times between removing the template and depositing the metal. This immersion eliminates damage to the negative that would be incurred in drying the negative out between these processing steps. Another aspect of the invention is metallic membranes prepared according to the preceding method. For example, metallic membranes having pores smaller on one side than on the other side of the membrane are provided.
摘要翻译：提供了用于制造多孔金属膜的改进的两步复制方法。通过将液体前体渗透到模板中，固化前体以形成固体阴极，并除去模板以暴露阴性，从而制备多孔非金属模板的阴性。金属沉积环绕暴露的负极。去除阴性提供了具有复制原始模板膜的孔的孔的多孔金属膜。在除去模板和沉积金属之前，将负片始终浸入液体中。这种浸没消除了在这些处理步骤之间干燥负极时将产生的负面损坏。本发明的另一方面是根据前述方法制备的金属膜。例如，提供在一侧的孔比膜的另一侧更小的金属膜。

72. 发明申请

US20080224145A1 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 有权
公开(公告)号：US20080224145A1
公开(公告)日：2008-09-18
申请号：US11907348
申请日：2007-10-11
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L29/04 , H01L29/788 , H01L29/78 , H01L27/12 , H01L21/316 , H01L21/762
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.

73. 发明申请

US20070189296A1 Data transmission circuit and method for controlling the data transmission circuit 有权
标题翻译：数据传输电路及数据传输电路的控制方法
公开(公告)号：US20070189296A1
公开(公告)日：2007-08-16
申请号：US11704245
申请日：2007-02-09
申请人： Yuji Saito
发明人： Yuji Saito
IPC分类号： H04L12/56
CPC分类号： H04L49/9094 , H04L47/10 , H04L49/90
摘要： A circuit connected to a data transmission path, said circuit comprising, a merge element which generates merged data by merging a plurality of incoming data; and a controller which transmits said merged data through said data transmission path when said data transmission path comes open.
摘要翻译：连接到数据传输路径的电路，所述电路包括：合并元件，其通过合并多个输入数据产生合并的数据; 以及当所述数据传输路径打开时通过所述数据传输路径发送所述合并的数据的控制器。

74. 发明授权

US07195833B2 Solid oxide electrolyte with ion conductivity enhancement by dislocation 有权
标题翻译：固体氧化物电解质，通过位错提高离子电导率
公开(公告)号：US07195833B2
公开(公告)日：2007-03-27
申请号：US10449709
申请日：2003-05-29
申请人： Yuji Saito , Friedrich B. Prinz , Yong-Il Park , Ryan O'Hayre
发明人： Yuji Saito , Friedrich B. Prinz , Yong-Il Park , Ryan O'Hayre
IPC分类号： H01M8/10
CPC分类号： H01M8/124 , C04B35/486 , C04B35/50 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2111/00801 , C04B2111/00853 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , G01N27/4073 , H01M4/9025 , H01M8/1226 , H01M8/1231 , H01M8/1246 , H01M8/1253 , H01M8/126 , H01M2008/1293 , H01M2300/0074 , Y02E60/525 , Y02P70/56 , Y10T29/49115 , C04B41/5042 , C04B41/5045 , C04B41/522 , C04B41/0027 , C04B41/0072 , C04B41/5116 , C04B41/5122 , C04B35/48
摘要： Dislocations are fabricated into electrolyte membrane films to increase ion conductivity. Ion and/or electron irradiation causes the growth of vacancy clusters within the thin film and collapsing into Frank dislocation loops that exhibit high ion conductivity. Maximum ion conductivity is accomplished by spatially reorienting the Frank dislocation loops during a following heat-treatment of the membrane. Thereby the dislocation loops form surface-to-surface continuous dislocations along which ions may propagate between membrane surfaces with minimal activation energies. Dislocation densities in the range of 108˜1014 cm/cm3 may be fabricated with conventional irradiation techniques into ceramics such as, for example yttria stabilized zirconia and doped ceria.
摘要翻译：将位错制成电解质膜膜以提高离子电导率。离子和/或电子辐射导致薄膜内空位簇的生长并且折叠成显示出高离子电导率的Frank位错环。通过在膜的随后热处理中空间调整Frank位错环来实现最大离子传导性。因此，位错环形成表面到表面的连续位错，离子可以沿着该位移以最小的活化能在膜表面之间传播。可以用常规照射技术将10×10〜14cm / cm 3范围内的位错密度制成陶瓷，例如氧化钇稳定氧化锆和掺杂二氧化铈。

75. 发明申请

US20060273004A1 Gas/ion species selective membrane support by multi-stage nano-hole array metal structure 失效
标题翻译：气/离子种选择性膜支持多级纳米孔阵列金属结构
公开(公告)号：US20060273004A1
公开(公告)日：2006-12-07
申请号：US11502140
申请日：2006-08-09
申请人： Sangkyun Kang , Young-Il Park , Friedrich Prinz , Suk-Won Cha , Yuji Saito , Ali Farvid , Pei-Chen Su
发明人： Sangkyun Kang , Young-Il Park , Friedrich Prinz , Suk-Won Cha , Yuji Saito , Ali Farvid , Pei-Chen Su
IPC分类号： B01D39/00
CPC分类号： B01D53/228 , B01D67/0062 , B01D69/02 , B01D69/10 , B01D71/022 , B01D71/024 , B01D2325/02 , B01D2325/04 , H01M4/861 , H01M4/8657 , H01M4/92 , H01M8/1226 , Y10T428/12028 , Y10T428/2944 , Y10T428/31678
摘要： An improved two-step replication process for fabrication of porous metallic membranes is provided. A negative of a porous non-metallic template is made by infiltration of a liquid precursor into the template, curing the precursor to form a solid negative, and removing the template to expose the negative. Metal is deposited to surround the exposed negative. Removal of the negative provides a porous metallic membrane having pores which replicate the pores of the original template membrane. The negative is kept immersed in a liquid at all times between removing the template and depositing the metal. This immersion eliminates damage to the negative that would be incurred in drying the negative out between these processing steps. Another aspect of the invention is metallic membranes prepared according to the preceding method. For example, metallic membranes having pores smaller on one side than on the other side of the membrane are provided.
摘要翻译：提供了用于制造多孔金属膜的改进的两步复制方法。通过将液体前体渗透到模板中，固化前体以形成固体阴极，并除去模板以暴露阴性，从而制备多孔非金属模板的阴性。金属沉积环绕暴露的负极。去除阴性提供了具有复制原始模板膜的孔的孔的多孔金属膜。在除去模板和沉积金属之前，将负片始终浸入液体中。这种浸没消除了在这些处理步骤之间干燥负极时将产生的负面损坏。本发明的另一方面是根据前述方法制备的金属膜。例如，提供在一侧的孔比膜的另一侧更小的金属膜。

76. 发明授权

US07012311B2 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof 失效
标题翻译：在Si晶体的（111）表面上形成的半导体器件及其制造方法
公开(公告)号：US07012311B2
公开(公告)日：2006-03-14
申请号：US09866576
申请日：2001-05-29
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Katsuyuki Sekine , Yuji Saito
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , G11C11/16 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/28291 , H01L27/11521 , H01L27/11585 , H01L27/1159 , H01L27/1203 , H01L29/045 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66825 , H01L29/7833 , H01L29/78603 , H01L29/78612 , H01L29/7883
摘要： A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
摘要翻译：半导体器件包括在（111）表面附近具有晶体表面的Si晶体和形成在所述晶体表面上的绝缘膜，所述绝缘膜的至少一部分包括含有Kr或Si氮化物的Si氧化物膜含Ar或Kr的薄膜。

77. 发明申请

US20060029851A1 Fuel cell with electroosmotic pump 有权
标题翻译：带电渗泵的燃料电池
公开(公告)号：US20060029851A1
公开(公告)日：2006-02-09
申请号：US10912527
申请日：2004-08-04
申请人： Juan Santiago , Jonathan Posner , Friedrich Prinz , Tibor Fabian , John Eaton , Suk-Won Cha , Cullen Buie , Daejoogn Kim , Hideaki Tsuru , Jun Sasahara , Tadahiro Kubota , Yuji Saito
发明人： Juan Santiago , Jonathan Posner , Friedrich Prinz , Tibor Fabian , John Eaton , Suk-Won Cha , Cullen Buie , Daejoogn Kim , Hideaki Tsuru , Jun Sasahara , Tadahiro Kubota , Yuji Saito
IPC分类号： H01M8/04 , H01M8/10
CPC分类号： H01M8/04164 , F04B17/00 , H01M8/04126 , H01M8/04186 , H01M8/04291 , H01M8/04447 , H01M8/04559 , H01M8/04589 , H01M8/04798 , H01M8/04917 , H01M8/1011 , Y02E60/523
摘要： Water flooding at the cathode of a fuel cell is a common problem in fuel cells. By integrating an electroosmotic (EO) pump to remove product water from the cathode area, fuel cell power can be increased. Integration of EO pumps transforms the designs of air channel and air breathing cathodes, reducing air pumping power loads and increasing oxidant transport. Hydration of gas streams, management of liquid reactants, and oxidant delivery can also be accomplished with integrated electroosmotic pumps. Electroosmotic pumps have no moving parts, can be integrated as a layer of the fuel cell, and scale with centimeter to micron scale fuel cells.
摘要翻译：在燃料电池的阴极处的水驱是在燃料电池中的常见问题。通过集成电渗（EO）泵以从阴极区域去除产物水，可以增加燃料电池的功率。 EO泵的整合改变了空气通道和空气呼吸阴极的设计，减少了空气泵送功率负荷和增加了氧化剂运输。气流的水化，液体反应物的管理和氧化剂输送也可以用集成的电渗泵完成。电渗泵没有移动部件，可以作为燃料电池的一层集成，并用厘米到微米级的燃料电池进行刻度。

78. 发明授权

US06734727B2 Feedforward amplifier, feedforward amplification method 有权
标题翻译：前馈放大器，前馈放大法
公开(公告)号：US06734727B2
公开(公告)日：2004-05-11
申请号：US10225222
申请日：2002-08-21
申请人： Kaoru Ishida , Naoki Takachi , Yuji Saito
发明人： Kaoru Ishida , Naoki Takachi , Yuji Saito
IPC分类号： H03F366
CPC分类号： H03F1/3229 , H03F1/3235 , H03F2201/3212
摘要： A feedforward amplifier includes a main amplifier for amplifying an input signal, a control circuit for generating a predetermined pilot signal based on the output of a local oscillator and a frequency divider included in the control circuit, and a coupler for combining the input signal or the amplified signal with the pilot signal to generate a combined signal. A first coupler and a second coupler are provided for extracting any distortion component from the combined signal. A vector adjuster, an error amplifier, and a third coupler are provided for removing the extracted distortion component from the combined signal to generate an output signal. An orthogonal detector is provided for using any one of the pilot signal, or the output of the local oscillator, the frequency divider, and the combination of the vector adjuster, error amplifier, and the third coupler to make an adjustment for removing the distortion component.
摘要翻译：前馈放大器包括用于放大输入信号的主放大器，用于基于本地振荡器的输出和包括在控制电路中的分频器产生预定导频信号的控制电路，以及用于将输入信号或放大信号与导频信号产生组合信号。提供第一耦合器和第二耦合器用于从组合信号中提取任何失真分量。提供矢量调节器，误差放大器和第三耦合器，用于从组合信号中去除提取的失真分量以产生输出信号。提供正交检测器，用于使用导频信号，本地振荡器的输出，分频器以及矢量调节器，误差放大器和第三耦合器的组合中的任何一个来进行调整以去除失真分量。

79. 发明授权

US06508736B2 Shift control apparatus for automatic transmission 有权
公开(公告)号：US06508736B2
公开(公告)日：2003-01-21
申请号：US09953967
申请日：2001-09-18
申请人： Yuji Saito
发明人： Yuji Saito
IPC分类号： F16H3100
CPC分类号： F16H61/08 , F16H61/061 , Y10T477/636
摘要： In a replacement gear shift effected by engagement of a first friction engagement element by increasing a first fluid pressure and instead by disengagement of a second friction engagement element by decreasing a second fluid pressure, a shift control apparatus forcibly increases the first fluid pressure at a gradual rate to prevent an undesired shift shock if the inertia phase does not end within a predetermined time.

80. 发明授权

US6085830A Heat sink, and process and apparatus for manufacturing the same 失效
标题翻译：散热器及其制造方法及装置
公开(公告)号：US6085830A
公开(公告)日：2000-07-11
申请号：US971688
申请日：1997-11-17
申请人： Koichi Mashiko , Masataka Mochizuki , Kazuhiko Goto , Yuji Saito , Yoshihiro Nagaki
发明人： Koichi Mashiko , Masataka Mochizuki , Kazuhiko Goto , Yuji Saito , Yoshihiro Nagaki
IPC分类号： B22D17/24 , B22D19/00 , H01L21/48 , H01L23/367 , H01L23/427 , H05K7/20
CPC分类号： B22D17/24 , B22D19/00 , F28D15/0233 , F28D15/0275 , F28F3/02 , H01L21/4871 , H01L23/3672 , H01L23/427 , H01L2924/0002 , Y10T29/4935
摘要： A process for manufacturing a heat sink, in which a plate-shaped base portion is formed by the diecasting method integrally with the one-end portions of a plurality of fills arrayed at a constant pitch and in parallel with each other.
摘要翻译：一种用于制造散热器的方法，其中，通过以与恒定间距排列并且彼此平行排列的多个填料的一端部的压铸方法一体地形成板状基部。

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