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71. 发明授权

US06667118B1 Texture-induced magnetic anisotropy of soft underlayers for perpendicular recording media 失效
标题翻译：用于垂直记录介质的软底层的纹理感应磁各向异性
公开(公告)号：US06667118B1
公开(公告)日：2003-12-23
申请号：US09911738
申请日：2001-07-25
申请人： Chung-Hee Chang , Rajiv Yadav Ranjan
发明人： Chung-Hee Chang , Rajiv Yadav Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/667 , G11B5/656 , G11B5/7315 , G11B5/8404 , Y10S428/90 , Y10T428/24975 , Y10T428/265
摘要： Perpendicular magnetic recording media having no, or substantially reduced, Barkhausen noise are manufactured by a method comprising steps of: (a) providing a non-magnetic substrate having a surface; (b) providing the surface of the substrate with a unidirectional texture pattern; (c) forming an underlayer of a soft magnetic material over the unidirectional texture pattern, the layer of soft magnetic material having positive magnetostriction and uniaxial magnetic anisotropy and including a multiplicity of magnetic domains; and (d) forming a magnetic recording layer of a hard magnetic material over the underlayer; wherein the uniaxial magnetic anisotropy of the underlayer of soft magnetic material is sufficiently large to orient the magnetic domains thereof along the axis of the uniaxial magnetic anisotropy and thereby restrict domain wall formation and/or movement, whereby generation of Barkhausen noise in the soft underlayer is suppressed.
摘要翻译：通过包括以下步骤的方法制造没有或基本上减少的巴克豪森噪声的垂直磁记录介质：（a）提供具有表面的非磁性基板;（b）为基板的表面提供单向纹理图案; （c）在单向纹理图案上形成软磁材料的底层，所述软磁材料层具有正的磁致伸缩和单轴磁各向异性并且包括多个磁畴; 以及（d）在所述底层上形成硬磁性材料的磁记录层;其中，所述软磁性材料的底层的单轴磁各向异性足够大以使其沿着所述单轴磁各向异性轴的方向取向，畴壁形成和/或移动，从而抑制软底层中的巴克豪森噪声的产生。

72. 发明授权

US06641936B1 Magnetic media with high Cr content, non-magnetic CoCrPt intermediate layers 失效
标题翻译：具有高Cr含量的磁性介质，非磁性CoCrPt中间层
公开(公告)号：US06641936B1
公开(公告)日：2003-11-04
申请号：US10020847
申请日：2001-12-18
申请人： Qixu Chen , Shanghsien Rou , Samuel D. Harkness, IV , Rajiv Yadav Ranjan
发明人： Qixu Chen , Shanghsien Rou , Samuel D. Harkness, IV , Rajiv Yadav Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/732 , G11B5/656 , G11B5/7325 , G11B5/851 , Y10S428/90 , Y10T428/12465 , Y10T428/12854 , Y10T428/265
摘要： A magnetic recording medium comprises, in overlying sequence from a surface of a non-magnetic substrate: at least one Cr-containing or B2-structured underlayer; a substantially non-magnetic CoCrPt alloy intermediate layer; and at least one CoCrPtB ferromagnetic alloy recording layer; wherein the intermediate layer of substantially non-magnetic CoCrPt alloy has a composition which facilitates Co (11.0) or (10.0) crystallographic orientation of the at least one CoCrPtB ferromagnetic alloy recording layer.
摘要翻译：磁记录介质以非磁性基板的表面叠层：至少一个含Cr或B2结构的底层;基本上非磁性的CoCrPt合金中间层; 和至少一个CoCrPtB铁磁合金记录层;其中基本上非磁性的CoCrPt合金的中间层具有促进至少一种CoCrPtB铁磁性合金记录层的Co（11.0）或（10.0）晶体取向的组成。

73. 发明授权

US06562488B1 CoCrPtTaNbB alloy for magnetic recording medium 失效
标题翻译： CoCrPtTaNbB合金用于磁记录介质
公开(公告)号：US06562488B1
公开(公告)日：2003-05-13
申请号：US09496340
申请日：2000-02-02
申请人： Qixu (David) Chen , Samuel Dacke Harkness, IV , Zhong (Stella) Wu , Lin Huang , Rajiv Yadav Ranjan , Charles Leu
发明人： Qixu (David) Chen , Samuel Dacke Harkness, IV , Zhong (Stella) Wu , Lin Huang , Rajiv Yadav Ranjan , Charles Leu
IPC分类号： G11B566
CPC分类号： G11B5/732 , G11B5/656 , G11B5/7325 , Y10S428/90 , Y10T428/12465 , Y10T428/12854 , Y10T428/265
摘要： A magnetic recording medium on glass or Al substrates with film structures of CrV/NiAl/CrMo/CoCrTa/CoCrPtTaNbB and CrMo/CoCrTa/CoCrPtTaNbB exhibit high coercivity and high signal-to-medium noise ratio. The medium can be used for high-density longitudinal magnetic recording. Embodiments include forming a sub-seed layer on a NiP-plated aluminum substrate, and sequentially depositing a seed layer, an underlayer, an intermediate layer and a magnetic layer on the substrate. The magnetic layer contains at least six elements, including Co, Cr and B.
摘要翻译：具有CrV / NiAl / CrMo / CoCrTa / CoCrPtTaNbB和CrMo / CoCrTa / CoCrPtTaNbB的膜结构的玻璃或Al衬底上的磁记录介质具有高的矫顽力和高的信噪比。该介质可用于高密度纵向磁记录。实施例包括在NiP镀铝基板上形成子种子层，并在基板上依次沉积种子层，底层，中间层和磁性层。磁性层含有至少六个元素，包括Co，Cr和B.

74. 发明授权

US06482301B1 Target shields for improved magnetic properties of a recording medium 有权
标题翻译：用于提高记录介质的磁性能的目标屏蔽
公开(公告)号：US06482301B1
公开(公告)日：2002-11-19
申请号：US09326245
申请日：1999-06-04
申请人： Qixu Chen , Charles Leu , Mark Anthony Shows , Paul Stephen McLeod , Rajiv Yadav Ranjan
发明人： Qixu Chen , Charles Leu , Mark Anthony Shows , Paul Stephen McLeod , Rajiv Yadav Ranjan
IPC分类号： C23C1432
CPC分类号： G11B5/851 , C23C14/34 , H01J37/34 , H01J37/3447
摘要： A collimator system is disclosed for use in an in-line pass-by sputtering system during the fabrication of recording media to improve the data storage density and read/write performance characteristics of the media. The collimator system includes a collimator shield and a collimator honeycomb. The shield includes a rectangular tube having a flange and a frame at inner and outer ends, respectively. The various components of the shield in part serve to prevent possible contamination of substrates due to target atom accumulation on the chamber walls during the sputtering process. The collimator honeycomb is provided for blocking target atoms from contacting the substrate at low incident angles. The collimator honeycomb is comprised of a plurality of collimators which are identical to each other. In a preferred embodiment, the collimators have a hexagonal cross-section taken from a perspective perpendicular to the substrate. The collimators may also have other geometric shapes. It is also contemplated that more than one collimator honeycomb level be used in alternative embodiments.
摘要翻译：在制造记录介质期间公开了一种用于在线传递溅射系统的准直器系统，以改善数据存储密度和读/写性能特性。准直仪系统包括准直器屏蔽和准直器蜂窝。护罩包括分别在内端和外端具有凸缘和框架的矩形管。屏蔽件的各种部件部分地用于防止在溅射过程期间由于靶室原子在室壁上的积聚而引起的基板的可能污染。提供准直器蜂窝用于阻止目标原子以低入射角接触基板。准直器蜂窝体由多个彼此相同的准直器构成。在优选实施例中，准直器具有垂直于衬底的透视图的六边形截面。准直器也可以具有其他几何形状。还可以想到，在替代实施例中可以使用多于一个准直器蜂窝等级。

75. 发明授权

US06348276B1 Magnetic recording media with a surface-oxidized nial sub-seedlayer 失效
标题翻译：具有表面氧化的Nial子种子层的磁记录介质
公开(公告)号：US06348276B1
公开(公告)日：2002-02-19
申请号：US09382581
申请日：1999-08-25
申请人： Qixu Chen , Zhong Wu , Samuel Dacke Harkness, IV , Charles Leu , Rajiv Yadav Ranjan
发明人： Qixu Chen , Zhong Wu , Samuel Dacke Harkness, IV , Charles Leu , Rajiv Yadav Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/732 , C23C14/025 , G11B5/66 , G11B5/7325 , G11B5/8404
摘要： Magnetic recording media with high coercivity and low noise, suitable for high density longitudinal recording, are formed with a surface oxidized sub-seedlayer between a non-magnetic substrate and seedlayer. Embodiments include depositing a NiAl sub-seedlayer on a glass or glass-ceramic substrate, oxidizing the surface of the NiAl sub-seedlayer, and then sequentially depositing a NiAl seedlayer, Cr or Cr alloy underlayer, e.g., CrMo, an optional intermediate CoCrTa alloy layer, a magnetic layer, e.g., a Co-alloy magnetic layer, and a protective overcoat, e.g., a carbon-containing protective overcoat.
摘要翻译：在非磁性基材和籽晶层之间形成表面氧化亚子层，适用于高密度纵向记录的具有高矫顽力和低噪声的磁记录介质。实施例包括在玻璃或玻璃陶瓷基片上沉积NiAl亚子层，氧化NiAl亚子层的表面，然后依次沉积NiAl种子层，Cr或Cr合金底层，例如CrMo，任选的中间CoCrTa合金层，磁性层，例如Co合金磁性层和保护性外涂层，例如含碳保护性外涂层。

76. 发明授权

US6117570A Thin film medium with surface-oxidized NiAl seed layer 有权
标题翻译：具有表面氧化的NiAl种子层的薄膜介质
公开(公告)号：US6117570A
公开(公告)日：2000-09-12
申请号：US152326
申请日：1998-09-14
申请人： Qixu David Chen , Liji Huang , Charles Leu , Rajiv Yadav Ranjan
发明人： Qixu David Chen , Liji Huang , Charles Leu , Rajiv Yadav Ranjan
IPC分类号： G11B5/73 , G11B5/84 , G11B5/66
CPC分类号： G11B5/732 , G11B5/8404 , Y10S428/90 , Y10T428/265
摘要： High areal density magnetic recording media exhibiting low noise are formed with a surface oxidized NiAl seed layer. Embodiments include forming the surface oxidized NiAl seed layer on a glass or glass-ceramic substrate, and sequentially depositing a Cr or Cr-alloy, such as CrV, an intermediate CoCrTa layer and a CoCrPtTa magnetic layer.
摘要翻译：利用表面氧化的NiAl种子层形成表现出低噪声的高密度磁性记录介质。实施例包括在玻璃或玻璃陶瓷衬底上形成表面氧化的NiAl种子层，并依次沉积Cr或Cr合金，例如CrV，中间CoCrTa层和CoCrPtTa磁性层。

77. 发明授权

US5840394A Method of manufacturing a thin film magnetic recording medium having low MrT value and high coercivity 失效
标题翻译：制造具有低MrT值和高矫顽力的薄膜磁记录介质的方法
公开(公告)号：US5840394A
公开(公告)日：1998-11-24
申请号：US829995
申请日：1997-04-02
申请人： Rajiv Yadav Ranjan , Miaogen Lu
发明人： Rajiv Yadav Ranjan , Miaogen Lu
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , Y10S428/90 , Y10T428/12465 , Y10T428/12861 , Y10T428/12896 , Y10T428/12903 , Y10T428/265
摘要： A method for manufacturing a magnetic disk includes the step of providing first and second magnetic layers on a substrate. The first magnetic layer comprises Co. The portion of the first magnetic layer comprising Cr, Ta, Ti, W, Zr or Hf, if any, is less than 7.5 atomic % of the first magnetic layer (and preferably less than 5 atomic %). The second magnetic layer also comprises Co, and more than 7.5 atomic % of the second layer is Cr, Ta, Ti, W, Zr or Hf (and preferably more than 10 atomic %). We have discovered that the first and second magnetic layers can be made very thin without having a great reduction in coercivity.
摘要翻译：一种制造磁盘的方法包括在衬底上提供第一和第二磁性层的步骤。第一磁性层包括Co。如果有的话，包含Cr，Ta，Ti，W，Zr或Hf的第一磁性层的部分小于第一磁性层的7.5原子％（优选小于5原子％），。第二磁性层还包含Co，并且第二层的大于7.5原子％的Cr，Ta，Ti，W，Zr或Hf（优选大于10原子％）。我们已经发现，第一和第二磁性层可以制成非常薄，而不会大大降低矫顽力。

78. 发明授权

US5658659A Magnetic alloy and method for manufacturing same 失效
标题翻译：磁性合金及其制造方法
公开(公告)号：US5658659A
公开(公告)日：1997-08-19
申请号：US286653
申请日：1994-08-05
申请人： Tu Chen , Rajiv Yadav Ranjan , Tsutomu Tom Yamashita , Miaogen Lu , Keith Kadokura , John Ko-Jen Chen , Ting Joseph Yuen
发明人： Tu Chen , Rajiv Yadav Ranjan , Tsutomu Tom Yamashita , Miaogen Lu , Keith Kadokura , John Ko-Jen Chen , Ting Joseph Yuen
IPC分类号： G11B5/66 , C23C14/06 , C23C14/50 , C23C14/56 , G11B5/64 , G11B5/65 , G11B5/73 , G11B5/738 , G11B5/85 , G11B5/851 , H01F10/00 , H01F10/14 , H01F41/18 , H01F41/30 , B32B5/16 , C23C14/00
CPC分类号： B82Y25/00 , B82Y40/00 , C23C14/06 , C23C14/50 , C23C14/568 , G11B5/656 , G11B5/7325 , G11B5/851 , H01F1/068 , H01F10/007 , H01F10/265 , H01F41/18 , H01F41/301 , Y02T50/67 , Y10S428/90 , Y10T428/12736 , Y10T428/12819 , Y10T428/12847 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： Media according to the present invention is comprised of individual magnetic grains as small as 300 .ANG. or smaller in diameter, which are uniformly spaced apart by a distance between 5 and 50 .ANG. by a solid segregant. This media will typically exhibit coercivity and remanent coercivity squareness of at least 0.8 each, a switching field distribution of less than 0.2, and a coercivity of at least 1500 Oe (with a minimum required Pt content), while simultaneously providing the lowest media jitter noise for optimum magnetic performance. The media is deposited at a low partial pressure of water and in the presence of an optimum amount of contributant gas on a doped nucleation layer for grain growth control.
摘要翻译：根据本发明的介质由直径小于300埃或更小的单个磁性颗粒组成，它们通过固体分离器均匀间隔5到50埃的范围。该介质通常将表现出至少0.8的矫顽力和残余矫顽力矩形度，小于0.2的切换场分布和至少1500Oe的矫顽力（具有最小所需的Pt含量），同时提供最低的介质抖动噪声以获得最佳的磁性能。介质以低分压的水分沉积，并且在最佳量的贡献气体存在下，在掺杂成核层上沉积用于晶粒生长控制。

79. 发明授权

US08310020B2 Non-volatile magnetic memory with low switching current and high thermal stability 有权
标题翻译：具有低开关电流和高热稳定性的非易失性磁存储器
公开(公告)号：US08310020B2
公开(公告)日：2012-11-13
申请号：US13455888
申请日：2012-04-25
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/10 , B82Y10/00 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.
摘要翻译：非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

80. 发明申请

US20120212998A1 Non-Volatile Perpendicular Magnetic Memory with Low Switching Current and High Thermal Stability 有权
标题翻译：具有低开关电流和高热稳定性的非易失性垂直磁存储器
公开(公告)号：US20120212998A1
公开(公告)日：2012-08-23
申请号：US13453940
申请日：2012-04-23
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： G11C11/16 , H01L43/10
CPC分类号： H01L43/10 , B82Y10/00 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The non-volatile current-switching magnetic memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer with a perpendicular anisotropy that is formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer, and a top electrode formed on top of the cap layer.
摘要翻译：非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。非易失性电流切换磁存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的具有垂直各向异性的第一自由层，形成在隧道层顶部的粒状膜层自由层，形成在所述粒状膜层的顶部上的第二自由层，形成在所述第二层的顶部上的盖层，以及形成在所述盖层的顶部上的顶部电极。

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