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    • 76. 发明授权
    • Bipolar MOS logic circuit and semiconductor integrated circuit
    • 双极MOS逻辑电路和半导体集成电路
    • US5057713A
    • 1991-10-15
    • US486419
    • 1990-02-28
    • Masahiro IwamuraAkira Ide
    • Masahiro IwamuraAkira Ide
    • H03K17/04H03K17/567H03K19/00H03K19/013H03K19/08H03K19/0944
    • H03K19/09448H03K19/001H03K19/0136
    • An invention is disclosed, which is suitable for operating a bipolar-MOS logic circuit, and in particular Bi-CMOS logic circuit with a low power supply voltage below 5V, e.g. around 3V. According to the present logic circuit, since the base current of a second NPN transistor is supplied from a power supply through a PMOS transistor (first current switching means), the impedance of which is lowered previously by a logic inverting means and an NMOS logic circuit (second current switching means), which is on/off controlled by an input signal, in a transient logic level transition period where the output is switched from the level "1" to "0" (i.e. it falls), it is possible to supply a sufficient base current to the second NPN. In this way, it is possible to turn-on the second NPN with a high speed and to pull down to the level "0" with high speed. Further, since the PMOS is switched off owing to the action of the logic inverting means just after having allowed a sufficient base current flow therethrough, the current path, through which the base current of the second NPN is supplied, is stopped and thus DC power consumption is elimated.
    • 公开了一种适用于操作双极MOS逻辑电路的发明,特别是具有低于5V的低电源电压的Bi-CMOS逻辑电路,例如, 3V左右 根据本逻辑电路,由于第二NPN晶体管的基极电流通过PMOS晶体管(第一电流开关装置)从电源提供,其阻抗先前由逻辑反相装置和NMOS逻辑电路 (第二电流切换装置),其在输出从电平“1”切换到“0”的瞬态逻辑电平转换周期(即,其下降)中,其由输入信号控制的开/关控制, 向第二NPN提供足够的基极电流。 以这种方式,可以高速打开第二个NPN并以高速下拉到“0”电平。 此外,由于刚刚在允许足够的基极电流流动之后由于逻辑反相装置的作用使PMOS截止,所以提供第二NPN的基极电流的电流通路被停止,因此直流电力 消费被淘汰。
    • 80. 发明授权
    • Bi-MOS buffer circuit
    • Bi-MOS缓冲电路
    • US4694202A
    • 1987-09-15
    • US682197
    • 1984-12-17
    • Masahiro IwamuraIkuro Masuda
    • Masahiro IwamuraIkuro Masuda
    • H03K19/08H03K19/0175H03K19/094H03K19/0944H03K19/092H03K3/01H03K19/02H03K19/20
    • H03K19/09448H03K19/09429
    • An improved buffer circuit is provided having an output stage for driving a load and a driver stage for driving said output stage. The output stage is constituted by a first MOS transistor to avoid problems found in bipolar output transistors which result from the amplitude of the output stage being influenced by the voltage V.sub.be of such output bipolar transistors. The driver stage, on the other hand, is formed of a bipolar transistor-MOS transistor composite logic cirucit. This driver stage includes an output circuit having a bipolar transistor for driving said first MOS transistor, and an input circuit including a second MOS transistor responsive to a predetermined input for rendering said bipolar transistor in the on or off state. The channel size of said first MOS transistor is larger than that of said second MOS transistor to give a device having an improved high operating speed.
    • 提供了一种改进的缓冲电路,具有用于驱动负载的输出级和用于驱动所述输出级的驱动级。 输出级由第一MOS晶体管构成,以避免由输出级的振幅受到这种输出双极晶体管的电压Vbe的影响而产生的双极性输出晶体管中的问题。 另一方面,驱动器级由双极晶体管MOS晶体管复合逻辑电路形成。 该驱动器级包括具有用于驱动所述第一MOS晶体管的双极晶体管的输出电路和响应于预定输入的第二MOS晶体管的输入电路,用于使所述双极晶体管处于导通或截止状态。 所述第一MOS晶体管的沟道尺寸大于所述第二MOS晶体管的沟道尺寸,以给出具有改善的高工作速度的器件。