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71. 发明授权

US08633720B2 Method and apparatus for measuring magnetic parameters of magnetic thin film structures 有权
标题翻译：用于测量磁性薄膜结构磁参数的方法和装置
公开(公告)号：US08633720B2
公开(公告)日：2014-01-21
申请号：US13134925
申请日：2011-06-21
申请人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
发明人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： G01R27/08
CPC分类号： G01R33/093
摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.
摘要翻译：高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。薄膜样品可以无图案化。探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个磁膜堆中的层改变方向。可以从不同电流频率的电压确定测得的谐振曲线。通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

72. 发明申请

US20130267042A1 MRAM Fabrication Method with Sidewall Cleaning 有权
标题翻译： MRAM制造方法与侧壁清洁
公开(公告)号：US20130267042A1
公开(公告)日：2013-10-10
申请号：US13443818
申请日：2012-04-10
申请人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L21/02
CPC分类号： H01L27/222 , H01L43/12
摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.
摘要翻译：描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。本发明的各种实施方案包括增强或优化方法的方法。如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

73. 发明授权

US08553452B2 Method for magnetic screening of arrays of magnetic memories 有权
标题翻译：磁记录阵列的磁屏蔽方法
公开(公告)号：US08553452B2
公开(公告)日：2013-10-08
申请号：US13314470
申请日：2011-12-08
申请人： Yuchen Zhou , Ebrahim Abedifard , Yiming Huai
发明人： Yuchen Zhou , Ebrahim Abedifard , Yiming Huai
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C11/165
摘要： A testing method is described that applies a sequence external magnetic fields of varying strength to MRAM cells (such as those with MTJ memory elements) in chips or wafers to selectively screen out cells with low or high thermal stability factor. The coercivity (Hc) is used as a proxy for thermal stability factor (delta). In the various embodiments the sequence, direction and strength of the external magnetic fields is used to determine the high coercivity cells that are not switched by a normal field and the low coercivity cells that are switched by a selected low field. In some embodiment the MRAM's standard internal electric current can be used to switch the cells. Standard circuit-based resistance read operations can be used to determine the response of each cell to these magnetic fields and identify the abnormal high and low coercivity cells.
摘要翻译：描述了一种测试方法，其将具有不同强度的序列外部磁场施加到芯片或晶片中的MRAM单元（例如具有MTJ存储元件的那些），以选择性地筛选具有低或高热稳定性因子的单元。矫顽力（Hc）用作热稳定因子（delta）的代表。在各种实施例中，外部磁场的顺序，方向和强度用于确定不被正常场切换的高矫顽力单元以及通过选定的低场切换的低矫顽力单元。在一些实施例中，MRAM的标准内部电流可用于切换电池。可以使用标准的基于电路的电阻读取操作来确定每个单元对这些磁场的响应并识别异常的高和低矫顽力单元。

74. 发明授权

US08546151B2 Method for manufacturing magnetic storage device and magnetic storage device 有权
标题翻译：磁存储装置和磁存储装置的制造方法
公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

75. 发明授权

US08519496B2 Spin-transfer torque magnetic random access memory with multi-layered storage layer 有权
标题翻译：具有多层存储层的自旋转矩磁性随机存取存储器
公开(公告)号：US08519496B2
公开(公告)日：2013-08-27
申请号：US13035857
申请日：2011-02-25
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01F10/123 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element is configured to store a state when electrical current is applied thereto. The STTMRAM element includes first and second free layers, each of which having an associated direction of magnetization defining the state of the STTMRAM element. Prior to the application of electrical current to the STTMRAM element, the direction of the magnetization of the first and second free layers each is in-plane and after the application of electrical current to the STTMRAM element, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译：自旋转移磁力随机存取存储器（STTMRAM）元件被配置为存储当电流被施加到其上时的状态。 STTMRAM元件包括第一和第二自由层，每个自由层具有定义STTMRAM元件的状态的相关联的磁化方向。在向STTMRAM元件施加电流之前，第一和第二自由层的磁化方向各自在平面内，并且在向STTMRAM元件施加电流之后，第二自由层的磁化方向变得基本上标题为平面外和第一自由层开关的磁化方向。在断电的情况下，第二自由层的磁化方向保持在与第一自由层基本相反的方向。

76. 发明授权

US08476723B2 Magnetic element having low saturation magnetization 有权
标题翻译：具有低饱和磁化强度的磁性元件
公开(公告)号：US08476723B2
公开(公告)日：2013-07-02
申请号：US13160438
申请日：2011-06-14
申请人： Hide Nagai , Zhitao Diao , Yiming Huai
发明人： Hide Nagai , Zhitao Diao , Yiming Huai
IPC分类号： H01L29/82 , H01L43/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
摘要翻译：描述包括磁性元件的磁性装置。磁性元件包括具有固定层磁化的固定层，非磁性的间隔层和具有自由层磁化的自由层。当超过阈值的写入电流通过第一自由层时，由于自旋转移，自由层是可变的。自由层包括低饱和磁化材料。

77. 发明申请

US20130052752A1 Mram etching processes 有权
标题翻译：摩擦蚀刻工艺
公开(公告)号：US20130052752A1
公开(公告)日：2013-02-28
申请号：US13199490
申请日：2011-08-30
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Parviz Keshtbod , Roger K. Malmhall
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Parviz Keshtbod , Roger K. Malmhall
IPC分类号： H01L21/8246
CPC分类号： H01L43/12 , H01L29/00
摘要： Various embodiments of the invention relate to etching processes used in fabrication of MTJ cells in an MRAM device. The various embodiments can be used in combination with each other. The first embodiment adds a hard mask buffer layer between a hard mask and a top electrode. The second embodiment uses a multilayered etching hard mask. The third embodiment uses a multilayered top electrode structure including a first Cu layer under a second layer such as Ta. The fourth embodiment is a two-phase etching process used for the bottom electrode to remove re-deposited material while maintaining a more vertical sidewall etching profile. In the first phase the bottom electrode layer is removed using carbonaceous reactive ion etching until the endpoint. In the second phase an inert gas and/or oxygen plasma is used to remove the polymer that was deposited during the previous etching processes.
摘要翻译：本发明的各种实施例涉及用于制造MRAM装置中的MTJ电池的蚀刻工艺。各种实施例可以彼此组合使用。第一实施例在硬掩模和顶电极之间添加硬掩模缓冲层。第二实施例使用多层蚀刻硬掩模。第三实施例使用包括第二层如Ta之下的第一Cu层的多层顶电极结构。第四实施例是用于底部电极去除再沉积材料同时保持更垂直侧壁蚀刻轮廓的两相蚀刻工艺。在第一阶段中，使用碳质反应离子蚀刻去除底部电极层直到端点。在第二阶段中，使用惰性气体和/或氧等离子体去除在先前蚀刻工艺期间沉积的聚合物。

78. 发明申请

US20130032907A1 MRAM with sidewall protection and method of fabrication 有权
公开(公告)号：US20130032907A1
公开(公告)日：2013-02-07
申请号：US13136454
申请日：2011-08-01
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Ebrahim Abedifard
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang , Ebrahim Abedifard
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L27/222 , H01L27/2436 , H01L43/08 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1675
摘要： BEOL memory cells are described that include one or more sidewall protection layers on the memory device (including, for example, an MTJ element) deposited prior to interconnect via etching to prevent the formation of electrical shorts between layers. One embodiment uses a single layer sidewall protection sleeve that is deposited after the memory device has been patterned. The layer material is vertically etched down to expose the upper surface of the top electrode while leaving a residual layer of protective material surrounding the rest of the memory device. The material for the protection layer is selected to resist the etchant used to remove the first dielectric material from the via in the subsequent interconnect process. A second embodiment uses dual-layer sidewall protection in which the first layer covers the memory element is preferably an oxygen-free dielectric and the second layer protects the first layer during via etching.

79. 发明申请

US20120306033A1 VIALESS MEMORY STRUCTURE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：无限记忆结构及其制造方法
公开(公告)号：US20120306033A1
公开(公告)日：2012-12-06
申请号：US13154346
申请日：2011-06-06
申请人： Kimihiro Satoh , Yiming Huai , Jing Zhang
发明人： Kimihiro Satoh , Yiming Huai , Jing Zhang
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L27/222 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.
摘要翻译：包括磁性隧道结（MTJ）的磁性存储单元的制造方法包括使用氮化硅层和氧化硅层形成用于沉积铜的沟槽，用于将MTJ连接到其它电路而不使用通孔。

80. 发明申请

US20120280339A1 PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYER 有权
标题翻译：具有平面磁静力切换增强层的全磁性隧道结（pMTJ）
公开(公告)号：US20120280339A1
公开(公告)日：2012-11-08
申请号：US13161412
申请日：2011-06-15
申请人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
发明人： Jing Zhang , Yuchen Zhou , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： H01L29/82
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1675 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetic tunnel junction (MTJ) having a perpendicular magnetic orientation. The MTJ includes a barrier layer, a free layer formed on top of the barrier layer and having a magnetic orientation that is perpendicular and switchable relative to the magnetic orientation of the fixed layer. The magnetic orientation of the free layer switches when electrical current flows through the STTMRAM element. A switching-enhancing layer (SEL), separated from the free layer by a spacer layer, is formed on top of the free layer and has an in-plane magnetic orientation and generates magneto-static fields onto the free layer causing the magnetic moments of the outer edges of the free layer to tilt with an in-plane component while minimally disturbing the magnetic moment at the center of the free layer to ease the switching of the free layer and to reduce the threshold voltage/current.
摘要翻译： STTMRAM元件包括具有垂直磁方位的磁性隧道结（MTJ）。 MTJ包括阻挡层，形成在阻挡层顶部上并具有相对于固定层的磁性取向垂直和可切换的磁性取向的自由层。当电流流过STTMRAM元件时，自由层的磁方向切换。通过间隔层从自由层分离的开关增强层（SEL）形成在自由层的顶部上并且具有面内磁性取向，并且在自由层上产生磁静电场，导致磁矩自由层的外边缘与面内部件倾斜，同时最小程度地扰乱自由层中心的磁矩，以便自由层的切换和降低阈值电压/电流。

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