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1. 发明申请

US20190148622A9 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
公开(公告)号：US20190148622A9
公开(公告)日：2019-05-16
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L43/02
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

2. 发明授权

US09019758B2 Spin-transfer torque magnetic random access memory with perpendicular magnetic anisotropy multilayers 有权
标题翻译：具有垂直磁各向异性多层的自旋转矩磁性随机存取存储器
公开(公告)号：US09019758B2
公开(公告)日：2015-04-28
申请号：US13225338
申请日：2011-09-02
申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
IPC分类号： G11C11/15 , G11C11/16 , H01L43/08
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin transfer torque magnetic random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer. The magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization having a preferred direction perpendicular to film plane.
摘要翻译：自旋传递转矩磁随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层。复合自由层和固定层中的每一个的磁化方向基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调节在使磁化具有与膜平面垂直的优选方向的范围内的磁性层组成。

3. 发明授权

US11678586B2 Memory system having thermally stable perpendicular magneto tunnel junction (MTJ) and a method of manufacturing same 有权
公开(公告)号：US11678586B2
公开(公告)日：2023-06-13
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H10N50/80 , G11C11/16 , H10N50/01 , H10N50/10
CPC分类号： H10N50/80 , G11C11/161 , H10N50/01 , H10N50/10 , Y10T428/1107 , Y10T428/1114
摘要： A spin-transfer torque magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL. The second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.

4. 发明授权

US08633720B2 Method and apparatus for measuring magnetic parameters of magnetic thin film structures 有权
标题翻译：用于测量磁性薄膜结构磁参数的方法和装置
公开(公告)号：US08633720B2
公开(公告)日：2014-01-21
申请号：US13134925
申请日：2011-06-21
申请人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
发明人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： G01R27/08
CPC分类号： G01R33/093
摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.
摘要翻译：高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。薄膜样品可以无图案化。探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个磁膜堆中的层改变方向。可以从不同电流频率的电压确定测得的谐振曲线。通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

5. 发明申请

US20120326712A1 Method and apparatus for measuring magnetic parameters of magnetic thin film structures 有权
标题翻译：用于测量磁性薄膜结构磁参数的方法和装置
公开(公告)号：US20120326712A1
公开(公告)日：2012-12-27
申请号：US13134925
申请日：2011-06-21
申请人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
发明人： Ioan Tudosa , Yuchen Zhou , Jing Zhang , Rajiv Yadav Ranjan , Yiming Huai
IPC分类号： G01R33/02
CPC分类号： G01R33/093
摘要： High-frequency resonance method is used to measure magnetic parameters of magnetic thin film stacks that show magnetoresistance including MTJs and giant magnetoresistance spin valves. The thin film sample can be unpatterned. Probe tips are electrically connected to the surface of the film (or alternatively one probe tip can be punched into the thin film stack) and voltage measurements are taken while injecting high frequency oscillating current between them to cause a change in electrical resistance when one of the layers in the magnetic film stack changes direction. A measured resonance curve can be determined from voltages at different current frequencies. The damping, related to the width of the resonance curve peak, is determined through curve fitting. In embodiments of the invention a variable magnetic field is also applied to vary the resonance frequency and extract the magnetic anisotropy and/or magnetic saturation of the magnetic layers.
摘要翻译：高频共振法用于测量显示包括MTJs和巨磁阻自旋阀在内的磁阻的磁性薄膜叠层的磁参数。薄膜样品可以无图案化。探针尖端电连接到膜的表面（或者可选地，一个探针尖端可以冲压到薄膜堆叠中）并且在其间注入高频振荡电流时进行电压测量，以在其中的一个磁膜堆中的层改变方向。可以从不同电流频率的电压确定测得的谐振曲线。通过曲线拟合确定与共振曲线峰的宽度相关的阻尼。在本发明的实施例中，还应用可变磁场来改变谐振频率并提取磁性层的磁各向异性和/或磁饱和。

6. 发明申请

US20130119498A1 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法
公开(公告)号：US20130119498A1
公开(公告)日：2013-05-16
申请号：US13737897
申请日：2013-01-09
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
摘要翻译：用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL））。第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。

7. 发明申请

US20120146167A1 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法
公开(公告)号：US20120146167A1
公开(公告)日：2012-06-14
申请号：US13277187
申请日：2011-10-19
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L29/82 , B05D5/12
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
摘要翻译：用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL））。第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。

8. 发明申请

US20120063218A1 SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR MAGNETIC ANISOTROPY MULTILAYERS 有权
标题翻译：旋转转子扭矩磁性随机存取存储器，带有全息磁性多面体多层
公开(公告)号：US20120063218A1
公开(公告)日：2012-03-15
申请号：US13225338
申请日：2011-09-02
申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin-torque transfer memory random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer, the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization have a preferred direction perpendicular to film plane.
摘要翻译：自旋转矩传递存储器随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层，每个的复合自由层和固定层基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调整在使得磁化具有垂直于膜平面的优选方向的范围内的磁性层组成。

9. 发明授权

US08574928B2 MRAM fabrication method with sidewall cleaning 有权
标题翻译： MRAM制造方法与侧壁清洁
公开(公告)号：US08574928B2
公开(公告)日：2013-11-05
申请号：US13443818
申请日：2012-04-10
申请人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Kimihiro Satoh , Yiming Huai , Yuchen Zhou , Jing Zhang , Dong Ha Jung , Ebrahim Abedifard , Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/12
摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.
摘要翻译：描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。本发明的各种实施方案包括增强或优化方法的方法。如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

10. 发明授权

US08565010B2 Magnetic random access memory with field compensating layer and multi-level cell 有权
标题翻译：具有场补偿层和多级单元的磁随机存取存储器
公开(公告)号：US08565010B2
公开(公告)日：2013-10-22
申请号：US13099321
申请日：2011-05-02
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , H01L43/02
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

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