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71. 发明授权

US06993225B2 Tapered structure for providing coupling between external optical device and planar optical waveguide and method of forming the same 有权
标题翻译：用于在外部光学装置和平面光波导之间提供耦合的锥形结构及其形成方法
公开(公告)号：US06993225B2
公开(公告)日：2006-01-31
申请号：US10775872
申请日：2004-02-10
申请人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
发明人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
IPC分类号： G02B6/26 , H01L21/02
CPC分类号： G02B6/42 , G02B6/34 , G02B6/4214
摘要： Methods of forming a tapered evanescent coupling region for use with a relatively thin silicon optical waveguide formed with, for example, an SOI structure. A tapered evanescent coupling region is formed in a silicon substrate that is used as a coupling substrate, the coupling substrate thereafter joined to the SOI structure. A gray-scale photolithography process is used to define a tapered region in photoresist, the tapered pattern thereafter transferred into the silicon substrate. A material exhibiting a lower refractive index than the silicon optical waveguide layer (e.g., silicon dioxide) is then used to fill the tapered opening in the substrate. Advantageously, conventional silicon processing steps may be used to form coupling facets in the silicon substrate (i.e., angled surfaces, V-grooves) in an appropriate relation to the tapered evanescent coupling region. The coupling facets may be formed contiguous with the tapered evanescent coupling region, or formed through the opposing side of the silicon substrate.
摘要翻译：形成锥形渐逝耦合区域的方法，用于与例如SOI结构形成的相对薄的硅光波导一起使用。在用作耦合衬底的硅衬底中形成锥形渐逝耦合区，然后耦合衬底连接到SOI结构。使用灰度光刻工艺来限定光致抗蚀剂中的锥形区域，此后的锥形图案转移到硅衬底中。然后使用显示比硅光波导层（例如二氧化硅）低的折射率的材料来填充衬底中的锥形开口。有利地，可以使用常规的硅处理步骤以与锥形渐逝耦合区域适当的关系在硅衬底（即成角度的表面，V形槽）中形成耦合面。耦合面可以形成为与锥形渐逝耦合区域相邻，或者通过硅衬底的相对侧形成。

72. 发明申请

US20080089634A1 Segmented optical modulator 有权
标题翻译：分段光调制器
公开(公告)号：US20080089634A1
公开(公告)日：2008-04-17
申请号：US11973440
申请日：2007-10-09
申请人： Paulius Mosinskis , Robert Montgomery , Prakash Gothoskar
发明人： Paulius Mosinskis , Robert Montgomery , Prakash Gothoskar
IPC分类号： G02F1/035
CPC分类号： G02F1/2255 , G02F1/0121 , H04B10/5051 , H04B10/50575
摘要： An optical modulator is formed to include an adjustable drive arrangement for dynamically adjusting the effective length of the optical signals path(s) within the modulator. Each modulator arm is partitioned into a plurality of segments, with each segment coupled to a separate electrical signal driver. Therefore, the effective length of each modulator arm will be a function of the number of drivers that are activated for each arm at any given point in time. A feedback arrangement may be used with the plurality of drivers to dynamically adjust the operation of the modulator by measuring the extinction ratio as a function of optical power, turning “on” or “off” individual drivers accordingly.
摘要翻译：光学调制器被形成为包括可调驱动装置，用于动态地调节调制器内的光信号路径的有效长度。每个调制器臂被分割成多个段，每个段耦合到单独的电信号驱动器。因此，每个调制器臂的有效长度将是在任何给定时间点为每个臂激活的驱动器的数量的函数。反馈装置可以与多个驱动器一起使用，以通过测量作为光功率的函数的消光比来相应地“打开”或“关闭”个别驱动器来动态地调节调制器的操作。

73. 发明申请

US20070274630A1 Wideband optical coupling into thin SOI CMOS photonic integrated circuit 有权
标题翻译：宽带光耦合成薄SOI CMOS光子集成电路
公开(公告)号：US20070274630A1
公开(公告)日：2007-11-29
申请号：US11652348
申请日：2007-01-11
申请人： Margaret Ghiron , Prakash Gothoskar , John Fangman , Robert Montgomery , Mary Nadeau
发明人： Margaret Ghiron , Prakash Gothoskar , John Fangman , Robert Montgomery , Mary Nadeau
IPC分类号： G02B6/26
CPC分类号： G02B6/4231
摘要： An arrangement for providing optical coupling into and out of a relatively thin silicon waveguide formed in the SOI layer of an SOI structure includes a lensing element and a defined reference surface within the SOI structure for providing optical coupling in an efficient manner. The input to the waveguide may come from an optical fiber or an optical transmitting device (laser). A similar coupling arrangement may be used between a thin silicon waveguide and an output fiber (either single mode fiber or multimode fiber).
摘要翻译：用于在SOI结构的SOI层中形成的相对薄的硅波导提供光耦合的装置包括在SOI结构内的透镜元件和限定的参考表面，用于以有效的方式提供光耦合。波导的输入可以来自光纤或光发射装置（激光）。可以在薄硅波导和输出光纤（单模光纤或多模光纤）之间使用类似的耦合布置。

74. 发明授权

US07118682B2 Low loss SOI/CMOS compatible silicon waveguide and method of making the same 有权
标题翻译：低损耗SOI / CMOS兼容硅波导及其制造方法
公开(公告)号：US07118682B2
公开(公告)日：2006-10-10
申请号：US10806738
申请日：2004-03-23
申请人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
发明人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
IPC分类号： B29D11/00
CPC分类号： G02F1/025
摘要： A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.
摘要翻译：用于减少在绝缘体上硅（SOI）结构中形成的硅波导中的光信号损耗的方法和结构使用CMOS处理技术来沿着波导区域的范围舍入硅材料的边缘/角。一个示例性的工艺集合利用附加的牺牲硅层，其随后被蚀刻以沿着光波导形成硅侧壁圆角，因此圆角“波浪”了波导的边缘。或者，牺牲硅层可以被氧化以消耗下面的硅波导层的一部分，也是边缘的四周。代替使用牺牲硅层，可以在覆盖硅层上图案化抗氧化层，所述图案被限定为保护光波导区域。然后使用热氧化工艺将硅层的暴露部分转化成二氧化硅，在硅层的边缘处形成鸟的喙结构，从而限定硅波导结构的“圆形”边缘。

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