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1. 发明授权

US07499620B2 Low loss SOI/CMOS compatible silicon waveguide 有权
标题翻译：低损耗SOI / CMOS兼容硅波导
公开(公告)号：US07499620B2
公开(公告)日：2009-03-03
申请号：US11516217
申请日：2006-09-06
申请人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
发明人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
IPC分类号： G02B6/10
CPC分类号： G02F1/025
摘要： A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.
摘要翻译：用于减少在绝缘体上硅（SOI）结构中形成的硅波导中的光信号损耗的方法和结构使用CMOS处理技术来沿着波导区域的范围舍入硅材料的边缘/角。一个示例性的工艺集合利用附加的牺牲硅层，其随后被蚀刻以沿着光波导形成硅侧壁圆角，因此圆角“波浪”了波导的边缘。或者，牺牲硅层可以被氧化以消耗下面的硅波导层的一部分，也是边缘的四周。代替使用牺牲硅层，可以在覆盖硅层上图案化抗氧化层，所述图案被限定为保护光波导区域。然后使用热氧化工艺将硅层的暴露部分转化成二氧化硅，在硅层的边缘处形成鸟的喙结构，从而限定硅波导结构的“圆形”边缘。

2. 发明授权

US06993225B2 Tapered structure for providing coupling between external optical device and planar optical waveguide and method of forming the same 有权
标题翻译：用于在外部光学装置和平面光波导之间提供耦合的锥形结构及其形成方法
公开(公告)号：US06993225B2
公开(公告)日：2006-01-31
申请号：US10775872
申请日：2004-02-10
申请人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
发明人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
IPC分类号： G02B6/26 , H01L21/02
CPC分类号： G02B6/42 , G02B6/34 , G02B6/4214
摘要： Methods of forming a tapered evanescent coupling region for use with a relatively thin silicon optical waveguide formed with, for example, an SOI structure. A tapered evanescent coupling region is formed in a silicon substrate that is used as a coupling substrate, the coupling substrate thereafter joined to the SOI structure. A gray-scale photolithography process is used to define a tapered region in photoresist, the tapered pattern thereafter transferred into the silicon substrate. A material exhibiting a lower refractive index than the silicon optical waveguide layer (e.g., silicon dioxide) is then used to fill the tapered opening in the substrate. Advantageously, conventional silicon processing steps may be used to form coupling facets in the silicon substrate (i.e., angled surfaces, V-grooves) in an appropriate relation to the tapered evanescent coupling region. The coupling facets may be formed contiguous with the tapered evanescent coupling region, or formed through the opposing side of the silicon substrate.
摘要翻译：形成锥形渐逝耦合区域的方法，用于与例如SOI结构形成的相对薄的硅光波导一起使用。在用作耦合衬底的硅衬底中形成锥形渐逝耦合区，然后耦合衬底连接到SOI结构。使用灰度光刻工艺来限定光致抗蚀剂中的锥形区域，此后的锥形图案转移到硅衬底中。然后使用显示比硅光波导层（例如二氧化硅）低的折射率的材料来填充衬底中的锥形开口。有利地，可以使用常规的硅处理步骤以与锥形渐逝耦合区域适当的关系在硅衬底（即成角度的表面，V形槽）中形成耦合面。耦合面可以形成为与锥形渐逝耦合区域相邻，或者通过硅衬底的相对侧形成。

3. 发明授权

US07118682B2 Low loss SOI/CMOS compatible silicon waveguide and method of making the same 有权
标题翻译：低损耗SOI / CMOS兼容硅波导及其制造方法
公开(公告)号：US07118682B2
公开(公告)日：2006-10-10
申请号：US10806738
申请日：2004-03-23
申请人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
发明人： Vipulkumar Kantilal Patel , Prakash Gothoskar , Robert Keith Montgomery , Margaret Ghiron
IPC分类号： B29D11/00
CPC分类号： G02F1/025
摘要： A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.
摘要翻译：用于减少在绝缘体上硅（SOI）结构中形成的硅波导中的光信号损耗的方法和结构使用CMOS处理技术来沿着波导区域的范围舍入硅材料的边缘/角。一个示例性的工艺集合利用附加的牺牲硅层，其随后被蚀刻以沿着光波导形成硅侧壁圆角，因此圆角“波浪”了波导的边缘。或者，牺牲硅层可以被氧化以消耗下面的硅波导层的一部分，也是边缘的四周。代替使用牺牲硅层，可以在覆盖硅层上图案化抗氧化层，所述图案被限定为保护光波导区域。然后使用热氧化工艺将硅层的暴露部分转化成二氧化硅，在硅层的边缘处形成鸟的喙结构，从而限定硅波导结构的“圆形”边缘。

4. 发明授权

US07447395B2 Silicon modulator offset tuning arrangement 有权
标题翻译：硅调制器偏移调谐布置
公开(公告)号：US07447395B2
公开(公告)日：2008-11-04
申请号：US11810591
申请日：2007-06-06
申请人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
发明人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
IPC分类号： G02B6/12 , G02F1/295
CPC分类号： G02F1/025 , G02F1/0147 , G02F1/225 , G02F2201/126
摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index.
摘要翻译：基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。波导区域的局部温度的增加又将增加该区域中波导的折射率。施加的直流电压的控制导致控制折射率。

5. 发明授权

US07415184B2 Wideband optical coupling into thin SOI CMOS photonic integrated circuit 有权
标题翻译：宽带光耦合成薄SOI CMOS光子集成电路
公开(公告)号：US07415184B2
公开(公告)日：2008-08-19
申请号：US11652348
申请日：2007-01-11
申请人： Margaret Ghiron , Prakash Gothoskar , John Fangman , Robert Keith Montgomery , Mary Nadeau
发明人： Margaret Ghiron , Prakash Gothoskar , John Fangman , Robert Keith Montgomery , Mary Nadeau
IPC分类号： G02B6/10 , G02B6/12 , G02B6/32 , G02B6/26 , G02B6/30
CPC分类号： G02B6/4231
摘要： An arrangement for providing optical coupling into and out of a relatively thin silicon waveguide formed in the SOI layer of an SOI structure includes a lensing element and a defined reference surface within the SOI structure for providing optical coupling in an efficient manner. The input to the waveguide may come from an optical fiber or an optical transmitting device (laser). A similar coupling arrangement may be used between a thin silicon waveguide and an output fiber (either single mode fiber or multimode fiber).
摘要翻译：用于在SOI结构的SOI层中形成的相对薄的硅波导提供光耦合的装置包括在SOI结构内的透镜元件和限定的参考表面，用于以有效的方式提供光耦合。波导的输入可以来自光纤或光发射装置（激光）。可以在薄硅波导和输出光纤（单模光纤或多模光纤）之间使用类似的耦合布置。

6. 发明授权

US07003196B2 External grating structures for interfacing wavelength-division-multiplexed optical sources with thin optical waveguides 有权
标题翻译：用于将波分复用光源与薄光波导接口连接的外部光栅结构
公开(公告)号：US07003196B2
公开(公告)日：2006-02-21
申请号：US10935145
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/34
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/29311 , G02B6/34
摘要： A coupling arrangement for allowing multiple wavelengths to be coupled into and out of a relatively thin silicon optical waveguide layer utilizes a diffractive optical element, in the form of a volume phase grating, in combination with a prism coupling structure. The diffractive optical element is formed to comprise a predetermined modulation index sufficient to diffract the various wavelengths through angles associated with improving the coupling efficiency of each wavelength into the silicon waveguide. The diffractive optical element may be formed as a separate element, or formed as an integral part of the coupling facet of the prism coupler.
摘要翻译：用于允许多个波长耦合到相对薄的硅光波导层中的耦合布置利用体积相位光栅的形式的衍射光学元件与棱镜耦合结构组合。衍射光学元件被形成为包括足以将各种波长衍射成与提高每个波长到硅波导的耦合效率相关联的角度的预定调制指数。衍射光学元件可以形成为单独的元件，或者形成为棱镜耦合器的耦合面的整体部分。

7. 发明申请

US20080253713A1 Optical crossover in thin silicon 有权
标题翻译：薄硅光学交叉
公开(公告)号：US20080253713A1
公开(公告)日：2008-10-16
申请号：US12157630
申请日：2008-06-12
申请人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
发明人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/125 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12176 , G02B2006/12195
摘要： An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
摘要翻译：用于在基于SOI的结构中形成的波导之间提供光学交叉的装置利用SOI结构中的图案化几何形状，其被选择以减少信号重叠的区域中串扰的影响。优选地，光信号被固定以沿着正交方向（或不同波长）传播，以最小化串扰的影响。 SOI结构的几何形状被图案化以包括预定的锥形和/或反射表面以引导/形成传播的光学信号。光学交叉区域内的图案化波导区域可以形成为包括覆盖多晶硅段，以进一步使传播波束成形，并提高交叉布置的耦合效率。

8. 发明授权

US07587106B2 Optical crossover in thin silicon 有权
标题翻译：薄硅光学交叉
公开(公告)号：US07587106B2
公开(公告)日：2009-09-08
申请号：US12157630
申请日：2008-06-12
申请人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
发明人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/125 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12176 , G02B2006/12195
摘要： An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
摘要翻译：用于在基于SOI的结构中形成的波导之间提供光学交叉的装置利用SOI结构中的图案化几何形状，其被选择以减少信号重叠的区域中串扰的影响。优选地，光信号被固定以沿着正交方向（或不同波长）传播，以最小化串扰的影响。 SOI结构的几何形状被图案化以包括预定的锥形和/或反射表面以引导/形成传播的光学信号。光学交叉区域内的图案化波导区域可以形成为包括覆盖多晶硅段，以进一步使传播波束成形，并提高交叉布置的耦合效率。

9. 发明授权

US07440703B2 High-speed, silicon-based electro-optic modulator with feedback control 有权
标题翻译：具有反馈控制功能的高速硅基电光调制器
公开(公告)号：US07440703B2
公开(公告)日：2008-10-21
申请号：US11362305
申请日：2006-02-22
申请人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Keith Montgomery , Soham Pathak , Katherine A. Yanushefski
发明人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Keith Montgomery , Soham Pathak , Katherine A. Yanushefski
IPC分类号： H04B10/04 , G02B26/00 , G02B6/26
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
摘要翻译：用于实现大于1Gb / s的开关速度的电光调制器装置利用预加重脉冲来加速用于形成电光调制器的光波导的折射率变化。在一个实施例中，可以添加反馈回路以使用调制的光输出信号的一部分来调整预加重脉冲的幅度和持续时间以及用于调制的各种参考电平。对于基于硅的电光调制器的自由载体的电光调制器，预加重脉冲用于加速在输入信号数据值之间的转变处的自由载流子的移动。

10. 发明授权

US07298949B2 SOI-based photonic bandgap devices 有权
标题翻译：基于SOI的光子带隙器件
公开(公告)号：US07298949B2
公开(公告)日：2007-11-20
申请号：US11042774
申请日：2005-01-24
申请人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , David Piede , Kalpendu Shastri , Katherine A. Yanushefski
发明人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , David Piede , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/10 , G02B6/12
CPC分类号： G02F1/025 , G02F2202/32
摘要： An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance are also reduced as a consequence of using PBGs for lateral mode confinement.
摘要翻译：基于SOI的光子带隙（PBG）电光器件利用图案化的PBG结构来在SOI电光器件的有源波导区域内限定二维波导。在SOI结构中包含PBG柱状阵列导致在波导结构内提供光学模式的非常紧密的侧向约束，从而显着减少光学损耗。通过包括PBG结构，相关联的电触点可以放置在更接近有源区域而不影响光学性能，从而增加电光器件的切换速度。由于使用PBG用于横向模式限制，整个装置尺寸，电容和电阻也减小。

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