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1. 发明申请

US20070274630A1 Wideband optical coupling into thin SOI CMOS photonic integrated circuit 有权
标题翻译：宽带光耦合成薄SOI CMOS光子集成电路
公开(公告)号：US20070274630A1
公开(公告)日：2007-11-29
申请号：US11652348
申请日：2007-01-11
申请人： Margaret Ghiron , Prakash Gothoskar , John Fangman , Robert Montgomery , Mary Nadeau
发明人： Margaret Ghiron , Prakash Gothoskar , John Fangman , Robert Montgomery , Mary Nadeau
IPC分类号： G02B6/26
CPC分类号： G02B6/4231
摘要： An arrangement for providing optical coupling into and out of a relatively thin silicon waveguide formed in the SOI layer of an SOI structure includes a lensing element and a defined reference surface within the SOI structure for providing optical coupling in an efficient manner. The input to the waveguide may come from an optical fiber or an optical transmitting device (laser). A similar coupling arrangement may be used between a thin silicon waveguide and an output fiber (either single mode fiber or multimode fiber).
摘要翻译：用于在SOI结构的SOI层中形成的相对薄的硅波导提供光耦合的装置包括在SOI结构内的透镜元件和限定的参考表面，用于以有效的方式提供光耦合。波导的输入可以来自光纤或光发射装置（激光）。可以在薄硅波导和输出光纤（单模光纤或多模光纤）之间使用类似的耦合布置。

2. 发明申请

US20070000862A1 Low loss SOI/CMOS compatible silicon waveguide and method of making the same 有权
标题翻译：低损耗SOI / CMOS兼容硅波导及其制造方法
公开(公告)号：US20070000862A1
公开(公告)日：2007-01-04
申请号：US11516217
申请日：2006-09-06
申请人： Vipulkumar Patel , Prakash Gothoskar , Robert Montgomery , Margaret Ghiron
发明人： Vipulkumar Patel , Prakash Gothoskar , Robert Montgomery , Margaret Ghiron
IPC分类号： B29D11/00 , C23F1/00 , B44C1/22
CPC分类号： G02F1/025
摘要： A method and structure for reducing optical signal loss in a silicon waveguide formed within a silicon-on-insulator (SOI) structure uses CMOS processing techniques to round the edges/corners of the silicon material along the extent of the waveguiding region. One exemplary set of processes utilizes an additional, sacrificial silicon layer that is subsequently etched to form silicon sidewall fillets along the optical waveguide, the fillets thus “rounding” the edges of the waveguide. Alternatively, the sacrificial silicon layer can be oxidized to consume a portion of the underlying silicon waveguide layer, also rounding the edges. Instead of using a sacrificial silicon layer, an oxidation-resistant layer may be patterned over a blanket silicon layer, the pattern defined to protect the optical waveguiding region. A thermal oxidation process is then used to convert the exposed portion of the silicon layer into silicon dioxide, forming a bird's beak structure at the edges of the silicon layer, thus defining the “rounded” edges of the silicon waveguiding structure.
摘要翻译：用于减少在绝缘体上硅（SOI）结构中形成的硅波导中的光信号损耗的方法和结构使用CMOS处理技术来沿着波导区域的范围舍入硅材料的边缘/角。一个示例性的工艺集合利用附加的牺牲硅层，其随后被蚀刻以沿着光波导形成硅侧壁圆角，因此圆角“波浪”了波导的边缘。或者，牺牲硅层可以被氧化以消耗下面的硅波导层的一部分，也是边缘的四周。代替使用牺牲硅层，可以在覆盖硅层上图案化抗氧化层，所述图案被限定为保护光波导区域。然后使用热氧化工艺将硅层的暴露部分转化成二氧化硅，在硅层的边缘处形成鸟的喙结构，从而限定硅波导结构的“圆形”边缘。

3. 发明申请

US20050094939A1 Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling 有权
标题翻译：使用ev逝耦合将多个波长源连接到薄光波导上
公开(公告)号：US20050094939A1
公开(公告)日：2005-05-05
申请号：US10935146
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B20060101 , G02B6/34
CPC分类号： G02B6/12007 , G02B6/124 , G02B6/34
摘要： An arrangement for achieving and maintaining high efficiency coupling of light between a multi-wavelength optical signal and a relatively thin (e.g., sub-micron) silicon optical waveguide uses a prism coupler in association with an evanescent coupling layer. A grating structure having a period less than the wavelengths of transmission is formed in the coupling region (either formed in the silicon waveguide, evanescent coupling layer, prism coupler, or any combination thereof) so as to increase the effective refractive index “seen” by the multi-wavelength optical signal in the area where the beam exiting/entering the prism coupler intercepts the waveguide surface (referred to as the “prism coupling surface”). The period and/or duty cycle of the grating can be controlled to modify the effective refractive index profile in the direction away from the coupling region so as to reduce the effective refractive index from the relatively high value useful in multi-wavelength coupling to the lower value associated with maintaining confinement of the optical signals within the surface waveguide structure, thus reducing reflections along the transition region.
摘要翻译：用于实现和维持多波长光信号和较薄（例如亚微米）硅光波导之间的高效率耦合的布置使用与渐逝耦合层相关联的棱镜耦合器。在耦合区域（形成在硅波导，ev逝耦合层，棱镜耦合器或其任何组合中）形成具有小于透射波长的周期的光栅结构，以便通过“看到”来提高有效折射率离开/进入棱镜耦合器的光束截取波导表面（称为“棱镜耦合表面”）的区域中的多波长光信号。可以控制光栅的周期和/或占空比以在远离耦合区域的方向上改变有效折射率分布，以便将有效折射率从在多波长耦合中的有用折射率降低到较低的值与保持表面波导结构内的光信号的限制相关联的值，从而减少沿着过渡区域的反射。

4. 发明申请

US20050094938A1 External grating structures for interfacing wavelength-division-multiplexed optical sources with thin optical waveguides 有权
标题翻译：用于将波分复用光源与薄光波导接口连接的外部光栅结构
公开(公告)号：US20050094938A1
公开(公告)日：2005-05-05
申请号：US10935145
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B20060101 , G02B6/34
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/29311 , G02B6/34
摘要： A coupling arrangement for allowing multiple wavelengths to be coupled into and out of a relatively thin silicon optical waveguide layer utilizes a diffractive optical element, in the form of a volume phase grating, in combination with a prism coupling structure. The diffractive optical element is formed to comprise a predetermined modulation index sufficient to diffract the various wavelengths through angles associated with improving the coupling efficiency of each wavelength into the silicon waveguide. The diffractive optical element may be formed as a separate element, or formed as an integral part of the coupling facet of the prism coupler.
摘要翻译：用于允许多个波长耦合到相对薄的硅光波导层中的耦合布置利用体积相位光栅的形式的衍射光学元件与棱镜耦合结构组合。衍射光学元件被形成为包括足以将各种波长衍射成与提高每个波长到硅波导的耦合效率相关联的角度的预定调制指数。衍射光学元件可以形成为单独的元件，或者形成为棱镜耦合器的耦合面的整体部分。

5. 发明申请

US20050194990A1 Wafer-level opto-electronic testing apparatus and method 有权
标题翻译：晶圆级光电测试仪器及方法
公开(公告)号：US20050194990A1
公开(公告)日：2005-09-08
申请号：US11075430
申请日：2005-03-08
申请人： Prakash Gothoskar , Margaret Ghiron , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , David Piede , Katherine Yanushefski
发明人： Prakash Gothoskar , Margaret Ghiron , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , David Piede , Katherine Yanushefski
IPC分类号： G01R31/26
CPC分类号： G02B6/30 , G02B6/34 , G02B2006/12107
摘要： A wafer-level testing arrangement for opto-electronic devices formed in a silicon-on-insulator (SOI) wafer structure utilizes a single opto-electronic testing element to perform both optical and electrical testing. Beam steering optics may be formed on the testing element and used to facilitate the coupling between optical probe signals and optical coupling elements (e.g., prism couplers, gratings) formed on the top surface of the SOI structure. The optical test signals are thereafter directed into optical waveguides formed in the top layer of the SOI structure. The opto-electronic testing element also comprises a plurality of electrical test pins that are positioned to contact a plurality of bondpad test sites on the opto-electronic device and perform electrical testing operations. The optical test signal results may be converted into electrical representations within the SOI structure and thus returned to the testing element as electrical signals.
摘要翻译：用于在绝缘体上硅（SOI）晶片结构中形成的光电器件的晶片级测试装置利用单个光电测试元件执行光学和电学测试。光束转向光学元件可以形成在测试元件上，并且用于促进光学探针信号与形成在SOI结构的顶表面上的光耦合元件（例如，棱镜耦合器，光栅）之间的耦合。此后，光学测试信号被引导到形成在SOI结构的顶层中的光波导中。光电测试元件还包括多个电测试引脚，其被定位成接触光电器件上的多个接合焊盘测试点并执行电测试操作。光学测试信号结果可以转换为SOI结构内的电气表示，并因此作为电信号返回到测试元件。

6. 发明申请

US20050189591A1 Active manipulation of light in a silicon-on-insulator (SOI) structure 有权
标题翻译：主动操纵绝缘体上硅（SOI）结构中的光
公开(公告)号：US20050189591A1
公开(公告)日：2005-09-01
申请号：US11069852
申请日：2005-02-28
申请人： Prakash Gothoskar , Margaret Ghiron , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
发明人： Prakash Gothoskar , Margaret Ghiron , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
IPC分类号： G02B6/12 , H01L27/15
CPC分类号： G02B6/12004 , G02F1/025 , G02F1/292 , G02F2001/294
摘要： An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired “shaped” (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.
摘要翻译：用于主动地控制SOI基光学结构内的光的操纵的布置利用形成在SOI层内的掺杂区域和硅绝缘体 - 硅电容（SISCAP）结构的多晶硅层。这些区域相反地掺杂以形成有源器件，其中在相对掺杂区域之间施加电压电位用于改变受影响区域中的折射率并改变传播通过该区域的光信号的特性。可以有利地形成掺杂区域以呈现任何期望的“成形”（例如，透镜，棱镜，布拉格光栅等），以便根据这些器件的已知特性来操纵传播光束。本发明的一个或多个有源器件可以包括在形成SISCAP的SOI基光学元件（例如，诸如Mach-Zehnder干涉仪，环形谐振器，光学开关等）中，以形成活跃的，可调元素。

7. 发明申请

US20050135727A1 EMI-EMC shield for silicon-based optical transceiver 审中-公开
标题翻译：用于硅基光收发器的EMI-EMC屏蔽
公开(公告)号：US20050135727A1
公开(公告)日：2005-06-23
申请号：US11013722
申请日：2004-12-16
申请人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
发明人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski
IPC分类号： G02B6/42 , G02B6/12
CPC分类号： G02B6/4277 , G02B6/42 , G02B6/4246 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014
摘要： An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
摘要翻译：基于SOI的光电结构包括在单个SOI层内与其相关联的光学部件一起设置的各种电子部件，形成单片布置。通过在与SOI层相接的外部棱镜耦合器的表面上形成金属化的外层来提供EMI / EMC屏蔽，金属化层包括透明的孔，以允许光信号耦合到SOI层中。棱镜耦合器的相对表面也可以用金属材料涂覆以提供额外的屏蔽。此外，金属屏蔽板可以形成在SOI结构本身上，覆盖EMI敏感电子器件的位置。所有这些金属层最终被耦合到外部接地平面以隔离结构并提供必要的屏蔽。

8. 发明申请

US20050123232A1 Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure 失效
标题翻译：薄硅隔离器（SOI）结构中的平面波导光隔离器
公开(公告)号：US20050123232A1
公开(公告)日：2005-06-09
申请号：US11005286
申请日：2004-12-06
申请人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski , Harvey Wagner
发明人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine Yanushefski , Harvey Wagner
IPC分类号： G02B20060101 , G02B6/122 , G02B6/125 , G02B6/26 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/125 , G02B6/4207
摘要： A planar optical isolator is formed within the silicon surface layer of an SOI structure. A forward-directed signal is applied to an input waveguiding section of the isolator and thereafter propagates through a non-reciprocal waveguide coupling region into an output waveguide section. A rearward-directed signal enters via the output waveguide section and is thereafter coupled into the non-reciprocal waveguide structure, where the geometry of the structure functions to couple only a small amount of the reflected signal into the input waveguide section. In one embodiment, the non-reciprocal structure comprises an N-way directional coupler (with one output waveguide, one input waveguide and N-1 isolating waveguides). In another embodiment, the non-reciprocal structure comprises a waveguide expansion region including a tapered, mode-matching portion coupled to the output waveguide and an enlarged, non-mode matching portion coupled to the input waveguide such that a majority of a reflected signal will be mismatched with respect to the input waveguide section. By cascading a number of such planar SOI-based structures, increased isolation can be achieved—advantageously within a monolithic arrangement.
摘要翻译：在SOI结构的硅表面层内形成平面光隔离器。正向信号被施加到隔离器的输入波导部分，然后通过非互易波导耦合区域传播到输出波导部分中。后向信号经由输出波导部分进入，然后耦合到不可逆波导结构中，其中结构的几何结构仅将少量的反射信号耦合到输入波导部分中。在一个实施例中，非互易结构包括N路定向耦合器（具有一个输出波导，一个输入波导和N-1个隔离波导）。在另一个实施例中，不可逆结构包括波导扩展区域，其包括耦合到输出波导的锥形模式匹配部分和耦合到输入波导的放大的非模式匹配部分，使得反射信号的大部分将相对于输入波导部分不匹配。通过级联多个这种平面的基于SOI的结构，可以实现增加的隔离 - 有利地在单片布置中。

9. 发明申请

US20060140645A1 High-speed, silicon-based electro-optic modulator with feedback control 有权
标题翻译：具有反馈控制功能的高速硅基电光调制器
公开(公告)号：US20060140645A1
公开(公告)日：2006-06-29
申请号：US11362305
申请日：2006-02-22
申请人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Montgomery , Soham Pathak , Katherine Yanushefski
发明人： Kalpendu Shastri , Prakash Gothoskar , Margaret Ghiron , Vipulkumar Patel , Robert Montgomery , Soham Pathak , Katherine Yanushefski
IPC分类号： H04B10/04 , H04B10/12
CPC分类号： G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
摘要： An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
摘要翻译：用于实现大于1Gb / s的开关速度的电光调制器装置利用预加重脉冲来加速用于形成电光调制器的光波导的折射率变化。在一个实施例中，可以添加反馈回路以使用调制的光输出信号的一部分来调整预加重脉冲的幅度和持续时间以及用于调制的各种参考电平。对于基于硅的电光调制器的自由载体的电光调制器，预加重脉冲用于加速在输入信号数据值之间的转变处的自由载流子的移动。

10. 发明申请

US20070280326A1 External cavity laser in thin SOI with monolithic electronics 审中-公开
标题翻译：具有单片电子器件的薄SOI中的外腔激光器
公开(公告)号：US20070280326A1
公开(公告)日：2007-12-06
申请号：US11637979
申请日：2006-12-13
申请人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery
发明人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Montgomery
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： H01S5/141 , H01S5/06804 , H01S5/0687
摘要： An ECL laser structure utilizes an SOI-based grating structure coupled to the external gain medium to provide lasing activity. In contrast to conventional Bragg grating structures, the grating utilized in the ECL of the present invention is laterally displaced (i.e., offset) from the waveguide (in most cases, a rib or strip waveguide) comprising the laser cavity. The grating is formed in an area with higher contrast ratio between materials (silicon and oxide) and thus requires a lesser amount of optical energy to reflect the selected wavelength, and can easily be formed using well-known CMOS fabrication processes. The pitch of the grating (i.e., the spacing between adjacent grating elements) and the refractive index values of the grating materials determine the reflected wavelength (also referred to as the “center wavelength”). A thermally conductive strip is disposed alongside the grating to adjust/tune the center wavelength of the grating, where the application of an electric current to the thermally conductive strip will heat the strip and transfer this heat to the grating. The change of temperature of the grating will modify the refractive indexes of the grating materials and as a result change its center wavelength.
摘要翻译： ECL激光器结构利用耦合到外部增益介质的基于SOI的光栅结构来提供激光活动。与传统的布拉格光栅结构相比，在本发明的ECL中使用的光栅从包括激光腔的波导（大多数情况下是肋或条形波导）横向移位（即偏移）。光栅形成在材料（硅和氧化物）之间具有较高对比度的区域中，因此需要较少量的光能来反射所选择的波长，并且可以使用公知的CMOS制造工艺容易地形成。光栅的间距（即相邻光栅元件之间的间距）和光栅材料的折射率值决定了反射波长（也称为“中心波长”）。导热条沿光栅旁边设置以调整/调整光栅的中心波长，其中向导热带施加电流将加热带并将该热传递到光栅。光栅的温度变化会改变光栅材料的折射率，从而改变其中心波长。

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