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    • 74. 发明授权
    • Socket apparatus having improved contact system
    • 插座设备具有改进的接触系统
    • US5562473A
    • 1996-10-08
    • US294299
    • 1994-08-23
    • Kiyokaza IkeyaOsamu Yamazaki
    • Kiyokaza IkeyaOsamu Yamazaki
    • H01R33/76H01L23/32H01R13/24H05K7/10H01R13/62
    • H01R13/2442H05K7/1023
    • A socket (100) for the temporary mounting of an electric part such as an IC package (130) for burn-in testing and the like is shown in which a plurality of contact elements (10, 10') are mounted in the socket each having a stationary part (10a), a spring cantilever arm part (10b) and a contact edge part (10e). The contact elements (10, 10') are mounted so that the leads (130a) of an IC package (130) are each received on a respective contact edge part (10e). When the cover (102) of the socket is closed, wall member (105a) engages the top portion of the leads (130a) and exerts a generally vertical downward force on the contact edges (10e) causing them to be depressed to effect electrical connection between leads (130a) and respective contact elements (10, 10').
    • 示出了用于临时安装诸如用于老化测试的IC封装(130)的电气部件的插座(100)等,其中多个接触元件(10,10')安装在插座中 具有固定部分(10a),弹簧悬臂臂部分(10b)和接触边缘部分(10e)。 接触元件(10,10')被安装成使得IC封装(130)的引线(130a)各自容纳在相应的接触边缘部分(10e)上。 当插座的盖(102)关闭时,壁构件(105a)接合引线(130a)的顶部并且在接触边缘(10e)上施加大体上垂直的向下的力,使其被压下以实现电连接 引线(130a)和相应的接触元件(10,10')之间。
    • 75. 发明授权
    • Method for sputtering multi-component thin-film
    • 溅射多组分薄膜的方法
    • US4731172A
    • 1988-03-15
    • US856783
    • 1986-04-17
    • Hideaki AdachiHidetaka HigashinoTsuneo MitsuyuOsamu Yamazaki
    • Hideaki AdachiHidetaka HigashinoTsuneo MitsuyuOsamu Yamazaki
    • C23C14/02C23C14/08C23C14/22C23C14/35H01L21/314H01L21/316C23C14/34
    • C23C14/225C23C14/024C23C14/088C23C14/352H01L21/02197H01L21/02266H01L21/31691
    • A underlying layer of multi-component material of a first formula is deposited on a substrate by controlling the amounts of sputtering materials evaporated respectively from a plurality of sputtering sources. A transition layer of multi-component material is subsequently formed on the underlying layer by controlling the amounts of the sputtering materials so that the transition layer is given a second, variable formula varying in a range from the first formula at the boundary between the underlying layer and the transition layer to a third formula. An overlying layer of multi-component material of the third formula is subsequently formed on the transition layer by controlling the amounts of the sputtering materials. Specifically, the first formula is [Pb.sub.1-(x/100) La.sub.x/100 ][Zr.sub.y/100 Ti.sub.z/100 ].sub.w O.sub.3, in which 10.ltoreq.x.ltoreq.40, y.ltoreq.5, w=1-(x/400) and y+z=100, and the third formula is [Pb.sub.1-(X/100) La.sub.X/100 ] [Zr.sub.Y/100 Ti.sub.Z/100 ].sub.W O.sub.3, in which X.ltoreq.20, 40.ltoreq.Y.ltoreq.90, W=1-(X/400) and Y+Z=100.
    • 通过控制分别从多个溅射源蒸发的溅射材料的量,将第一配方的多组分材料的下层沉积在基板上。 随后通过控制溅射材料的量,在底层上形成多组分材料的过渡层,使得过渡层被赋予第二个可变公式,其变化范围从第一公式在下层 和过渡层到第三个公式。 随后通过控制溅射材料的量在过渡层上形成第三配方的多组分材料的上覆层。 具体地说,第一公式为[Pb1-(x / 100)Lax / 100] [Zry / 100Tiz / 100] wO3,其中10≤x≤40,y = 5,w = 1-( x / 400)和y + z = 100,第三式为[Pb1-(X / 100)LaX / 100] [ZrY / 100TiZ / 100] WO3,其中X = 20,40 <