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    • 73. 发明授权
    • Process for manufacturing a DRAM cell
    • 用于制造DRAM单元的工艺
    • US5043298A
    • 1991-08-27
    • US619666
    • 1990-11-28
    • Takashi YamadaFumio HoriguchiSatoshi InoueAkihiro NitayamaKazumasa Sunouchi
    • Takashi YamadaFumio HoriguchiSatoshi InoueAkihiro NitayamaKazumasa Sunouchi
    • H01L27/04H01L21/28H01L21/768H01L21/822H01L21/8242H01L27/10H01L27/108H01L29/417
    • H01L27/10808
    • When a semiconductor device having a multi-layered contact is fabaricated, the gate electrode is covered with a thick insulator film. A polycrystalline silicon film is formed in a state in which at least the gate electrode in the contact forming area is covered with a first oxidization-proof insulator film. An inter-layer insulator film is then formed in a state in which at least part of the polycrystalline silicon film is covered with a second oxidization-proof insulator film. A first contact hole is formed using the polycrystalline silicon film as an etching stopper, and the polycrystalline silicon film is then oxidized. Furthermore, a second contact hole is formed in the inter-layer insulator film on the upper surface of the second oxidization-proof insulator film using as the etching stopper the polycrystalline silicon film underlying the second oxidization-proof insulator film. Since the polycrystalline silicon film is formed under the inter-layer insulator film in the second contact forming area so as to cover the gate electrode, it acts as a stopper when the second contact is formed to thereby prevent a short circuit with the gate electrode even if there is no distance between the gate electrode and the second contact.
    • 当具有多层接触的半导体器件被制造时,栅电极被厚绝缘膜覆盖。 在至少形成接触形成区域中的栅电极被第一耐氧化绝缘膜覆盖的状态下形成多晶硅膜。 然后在至少部分多晶硅膜被第二防氧化绝缘膜覆盖的状态下形成层间绝缘膜。 使用多晶硅膜作为蚀刻阻挡层形成第一接触孔,然后将多晶硅膜氧化。 此外,在第二耐氧化绝缘膜的上表面上的层间绝缘膜中形成第二接触孔,使用作为蚀刻停止层的第二耐氧化绝缘膜的下面的多晶硅膜。 由于在第二接触形成区域中的层间绝缘体膜下方形成多晶硅膜以覆盖栅电极,所以当形成第二接触时,其作为阻挡体,从而防止栅电极的短路甚至 如果栅电极和第二触点之间没有距离。
    • 79. 发明授权
    • Portable electronic device
    • 便携式电子设备
    • US4250571A
    • 1981-02-10
    • US885732
    • 1978-03-13
    • Heihachiro EbiharaFukuo SekiyaTakashi Yamada
    • Heihachiro EbiharaFukuo SekiyaTakashi Yamada
    • G04G5/00G04G5/02G04G5/04G04B47/00G04C9/00G06F7/38
    • G04G5/04G04G5/041
    • A portable electronic device equipped with timekeeping circuit means for providing at least units of seconds and tens of seconds of time information, and display means for displaying said time information in digital form, which comprises first external control member for inputting numeric data signals, a control circuit for selecting at least said tens of seconds of said time data for correction, second external control member for inputting control signals to actuate said control circuit, first gate means for applying said numeric data signals to said timekeeping circuit means to effect correction of at least said tens of seconds of time information, second gate means for automatically resetting said units of seconds of time information to zero in response to correction of said tens of seconds of time information.
    • 一种装备有计时电路装置的便携式电子装置,用于提供至少单位为秒和数十秒的时间信息,以及用于显示数字形式的所述时间信息的显示装置,其包括用于输入数字数据信号的第一外部控制构件, 用于选择用于校正的所述时间数据的至少十几秒的电路,用于输入控制信号以致动所述控制电路的第二外部控制部件,用于将所述数字数据信号施加到所述计时电路装置的第一门装置, 所述数十秒的时间信息,响应于所述数十秒的时间信息的校正,将所述时间信息的所述单位自动重置为零的第二门装置。