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71. 发明申请

US20050245007A1 Method for manufacturing semiconductor device 有权
公开(公告)号：US20050245007A1
公开(公告)日：2005-11-03
申请号：US11159278
申请日：2005-06-23
申请人： Munehiro Azami , Chiho Kokubo , Aiko Shiga , Atsuo Isobe , Hiroshi Shibata , Shunpei Yamazaki
发明人： Munehiro Azami , Chiho Kokubo , Aiko Shiga , Atsuo Isobe , Hiroshi Shibata , Shunpei Yamazaki
IPC分类号： G02F1/1368 , G09F9/00 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/49 , H01L29/786 , H01L21/00 , H01L31/112 , H01L29/76 , H01L29/10 , H01L31/036
CPC分类号： H01L21/02678 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L27/12 , H01L27/1281 , H01L27/1285 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.

72. 发明申请

US20050161742A1 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US20050161742A1
公开(公告)日：2005-07-28
申请号：US11087652
申请日：2005-03-24
申请人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
发明人： Atsuo Isobe , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Shunpei Yamazaki , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L27/01 , H01L31/0392
CPC分类号： H01L21/02683 , H01L21/2022 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696
摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

73. 发明申请

US20050098784A1 Semiconductor device and semiconductor device production system 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20050098784A1
公开(公告)日：2005-05-12
申请号：US11013539
申请日：2004-12-17
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/00 , H01L29/76
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

74. 发明授权

US06645826B2 Semiconductor device and method of fabricating the same 有权
公开(公告)号：US06645826B2
公开(公告)日：2003-11-11
申请号：US10093313
申请日：2002-03-07
申请人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
发明人： Shunpei Yamazaki , Taketomi Asami , Toru Takayama , Ritsuko Kawasaki , Hiroki Adachi , Naoya Sakamoto , Masahiko Hayakawa , Hiroshi Shibata , Yasuyuki Arai
IPC分类号： H01L2126
CPC分类号： H01L29/7842 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/78621 , H01L29/78627 , H01L29/78636 , H01L29/78645 , H01L2029/7863
摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

75. 发明授权

US06591326B1 Method and information processing apparatus controlling information transfer among a plurality of processors 失效
标题翻译：控制多个处理器之间的信息传送的方法和信息处理装置
公开(公告)号：US06591326B1
公开(公告)日：2003-07-08
申请号：US09533068
申请日：2000-03-22
申请人： Teruaki Ichikawa , Hiroshi Shibata , Kazuyoshi Takayama , Akira Takakusagi , Hitoshi Kosokabe , Masayuki Shimizu , Hiroyuki Egawa
发明人： Teruaki Ichikawa , Hiroshi Shibata , Kazuyoshi Takayama , Akira Takakusagi , Hitoshi Kosokabe , Masayuki Shimizu , Hiroyuki Egawa
IPC分类号： G06F1300
CPC分类号： G06F15/16
摘要： A transfer control method includes a selecting step which selects one of a first route for making an asynchronous transfer to a request destination via a control block and a second route for making a synchronous transfer to the request destination by not passing the control block, with respect to a request from a request source.
摘要翻译：传输控制方法包括：选择步骤，其通过控制块选择用于进行到请求目的地的异步传送的第一路由和通过不通过控制块进行到请求目的地的同步传送的第二路由，相对于来自请求源的请求。

76. 发明授权

US06583472B1 Semiconductor device and method of manufacturing thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06583472B1
公开(公告)日：2003-06-24
申请号：US09653535
申请日：2000-08-31
申请人： Hiroshi Shibata , Atsuo Isobe
发明人： Hiroshi Shibata , Atsuo Isobe
IPC分类号： H01L2701
CPC分类号： H01L27/1255 , G02F1/133345 , G02F1/13454 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F1/136277 , G02F1/136286 , G02F1/1368 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3265 , H01L27/3276 , H01L29/4908 , H01L29/786 , H01L29/78633
摘要： To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.
摘要翻译：为了提供一种通过在确保足够的存储电容器（Cs）的同时获得高开口率而具有高质量显示的液晶显示装置，并且同时通过分散电容器布线的负载（像素写入电流）及时有效减轻负荷。扫描线形成在与栅电极不同的层上，电容布线与信号线平行。每个像素通过电介质连接到单独独立的电容器布线。因此，可以避免由相邻像素的写入电流引起的电容器布线的电位变化，从而获得令人满意的显示图像。

77. 发明授权

US06230094B1 Electronic control system and method having monitor program 失效
标题翻译：具有监控程序的电子控制系统和方法
公开(公告)号：US06230094B1
公开(公告)日：2001-05-08
申请号：US09262348
申请日：1999-03-04
申请人： Hideyuki Ohashi , Kuraji Kato , Hiroshi Shibata
发明人： Hideyuki Ohashi , Kuraji Kato , Hiroshi Shibata
IPC分类号： F02D4122
CPC分类号： F02D41/22 , F02D11/107 , F02D41/266 , F02D2041/227 , G05B19/0428
摘要： An electronic control system has an engine control computer and a throttle control computer. The engine control computer has a monitor program separate from an engine control program. The monitor program is for checking the operation of the throttle control computer and executed by the engine control computer as a timer interrupt routine. A watch dog timer is connected to the engine control computer to detect malfunction of the monitor program in response to a watch dog pulse produced during the execution of the monitor program. The watch dog timer disables an electronic throttle control by the throttle control computer upon detection of the malfunction of the monitor program. At the same time, the engine control mode is changed from a normal engine control to an engine power reduction control thereby to ensure a limp-home operation of the engine.
摘要翻译：电子控制系统具有发动机控制计算机和节气门控制计算机。发动机控制计算机具有与发动机控制程序分开的监视程序。监视程序用于检查节气门控制计算机的操作并由发动机控制计算机执行作为定时器中断程序。看门狗定时器被连接到发动机控制计算机，以响应在执行监视程序期间产生的看门狗脉冲来检测监视程序的故障。在检测到监视程序的故障时，看门狗定时器禁止由节气门控制计算机进行的电子节气门控制。同时，将发动机控制模式从正常的发动机控制改变为发动机功率降低控制，从而确保发动机的跛行回家操作。

78. 发明授权

US5805186A Ink jet head 失效
标题翻译：喷墨头
公开(公告)号：US5805186A
公开(公告)日：1998-09-08
申请号：US931260
申请日：1997-09-16
申请人： Naoto Yoshida , Hiroshi Shibata , Mitsuhide Matsuda , Takuma Takasu
发明人： Naoto Yoshida , Hiroshi Shibata , Mitsuhide Matsuda , Takuma Takasu
IPC分类号： B41J2/05 , B41J2/14 , B41J2/16
CPC分类号： B41J2/14129 , B41J2/1404 , B41J2/14096 , B41J2/1603 , B41J2/1623 , B41J2/1626 , B41J2/1631 , B41J2/1642 , B41J2/1646 , B41J2202/04
摘要： A pair of opposed electrodes are formed on a circuit substrate by photolithography, and an insulation film is formed on the circuit substrate to cover said electrodes therewith. An opening is formed through the insulation film in such a manner that areas of exposure of the pair of electrodes through the opening are substantially equal to each other. A nozzle fluid passage substrate, having a nozzle and a pressure chamber communicating with the nozzle, is placed on the circuit substrate through an adhesive layer in such a manner that the pressure chamber is disposed substantially coaxially with the opening. Then, the circuit substrate and the nozzle fluid passage substrate are bonded together through the adhesive layer by application of heat and pressure, thereby producing a ink jet head for a printer.
摘要翻译：通过光刻在电路基板上形成一对相对的电极，并且在电路基板上形成绝缘膜以覆盖所述电极。通过绝缘膜形成开口，使得一对电极通过开口的曝光面积基本相等。具有喷嘴和与喷嘴连通的压力室的喷嘴流体通道基板通过粘合剂层被放置在电路基板上，使得压力室与开口大致同轴地设置。然后，通过施加热和压力将电路基板和喷嘴流体通道基板通过粘合剂层粘合在一起，从而制造用于打印机的喷墨头。

79. 发明授权

US5570766A End bearing for one-way clutch 失效
标题翻译：单向离合器的端部轴承
公开(公告)号：US5570766A
公开(公告)日：1996-11-05
申请号：US403469
申请日：1995-03-14
申请人： Eichi Sato , Yoshihiro Kaku , Yuji Yokota , Hiroshi Shibata , Masanori Hatanaka , Eiji Sugiyama , Jun Sonoda , Tetsuaki Numata
发明人： Eichi Sato , Yoshihiro Kaku , Yuji Yokota , Hiroshi Shibata , Masanori Hatanaka , Eiji Sugiyama , Jun Sonoda , Tetsuaki Numata
IPC分类号： F16C33/12 , F16D41/07 , F16H57/08 , F16D41/06
CPC分类号： F16C33/12 , F16C33/122 , F16D41/07 , F16H57/08 , F16C2204/60
摘要： An end bearing for one-way clutch which is preferred for use in an automatic transmission is disclosed. The end bearing comprises a body formed of a steel plate, a hard coating applied to the surface of the body, and a soft coating applied to the surface of the hard coating. The steel plate of the body assures a sufficient rigidity. Regions of the end bearing which provide sliding surfaces are covered by a soft coating and a hard coating, which improves the anti-seizing resistance and the durability of the end bearing.
摘要翻译：公开了一种优选用于自动变速器的单向离合器的端部轴承。端轴承包括由钢板形成的主体，施加到主体表面的硬涂层，以及施加到硬涂层表面的软涂层。机身钢板确保足够的刚性。提供滑动表面的端部轴承的区域被软涂层和硬涂层覆盖，这提高了端部轴承的防卡死性和耐久性。

80. 发明授权

US5510531A Proteinase inhibitor 失效
标题翻译：蛋白酶抑制剂
公开(公告)号：US5510531A
公开(公告)日：1996-04-23
申请号：US318557
申请日：1994-10-05
申请人： Naoki Higuchi , Masayuki Saitoh , Hiroshi Shibata
发明人： Naoki Higuchi , Masayuki Saitoh , Hiroshi Shibata
IPC分类号： A61K38/00 , C07C237/06 , C07C237/22 , C07C271/22 , C07C271/34 , C07D209/48 , C07F7/08 , C07F9/24 , C07K5/06 , C07C233/00
CPC分类号： C07D209/48 , C07C237/06 , C07C237/22 , C07C271/22 , C07C271/34 , C07F7/0818 , C07F9/2458 , C07K5/06043 , C07K5/06191 , A61K38/00 , C07C2103/74
摘要： A Novel N-substituted peptidyl compound represented by the general formula (1): ##STR1## where R.sub.1 is a straight-chained or branched acyl group having 2-10 carbon atoms, a branched, cyclic or bridged cyclic alkyloxycarbonyl group having 4-15 carbon atoms; a benzyloxycarbonyl group which is unsubstituted or substituted with a halogen atom, nitro group or methoxy group; a 2,2,2-trichloroethyloxycarbonyl group, a 2-(trimethylsilyl)ethyloxycarbonyl group, a p-toluensulfonyl group, an o-nitrophenylsulfenyl group, a diphenylphosphonothioyl group, a triphenylmethyl group, a 2-benzoyl-1-methylvinyl group;R.sub.2 is a hydrogen atom or when taken together with R.sub.1, may form a phthaloyl group;R.sub.3 is an isobutyl group, a n-butyl group or an isopropyl group;R.sub.4 is a butyl group, andR.sub.5 is a hydrogen atom;provided that R.sub.1 can be an unsubstituted benzyloxycarbonyl group only when R.sub.3 is a n-butyl group.
摘要翻译：由通式（1）表示的新型N-取代的肽基化合物：其中R1是具有2-10个碳原子的直链或支链酰基，支链，环状或桥连的环烷氧基羰基，其具有 4-15个碳原子; 未被取代或被卤素原子，硝基或甲氧基取代的苄氧基羰基; 2,2,2-三氯乙氧基羰基，2-（三甲基甲硅烷基）乙氧基羰基，对甲苯磺酰基，邻硝基苯基亚磺酰基，二苯基膦酰基，三苯基甲基，2-苯甲酰基-1-甲基乙烯基等。 R2是氢原子，当与R1一起时，可以形成邻苯二甲酰基; R3是异丁基，正丁基或异丙基; R4是丁基，R5是氢原子; 条件是只有当R3为正丁基时，R 1可以是未取代的苄氧基羰基。

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