专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06465137B2 Resist composition and pattern forming process 有权
标题翻译：抗蚀组成和图案形成过程
公开(公告)号：US06465137B2
公开(公告)日：2002-10-15
申请号：US09288781
申请日：1999-04-09
申请人： Keiji Watanabe , Miwa Kozawa , Ei Yano , Takahisa Namiki , Koji Nozaki , Junichi Kon , Eiichi Hoshino , Masahiro Uraguchi , Toshikatsu Minagawa , Yuichi Yamamoto
发明人： Keiji Watanabe , Miwa Kozawa , Ei Yano , Takahisa Namiki , Koji Nozaki , Junichi Kon , Eiichi Hoshino , Masahiro Uraguchi , Toshikatsu Minagawa , Yuichi Yamamoto
IPC分类号： G03F900
CPC分类号： G03F7/004 , G03F7/0045
摘要： A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.
摘要翻译：抗蚀剂组合物，在抗蚀剂中含有熔点为160℃以上的添加剂，不含芳香环，分子大小不大于且可溶于抗蚀剂的显影液中相对于100重量份的抗蚀剂的固体重量为1-50重量份，以及使用它的图案形成方法。从而可以获得高分辨率抗蚀剂图案。

72. 发明授权

US06451501B1 Acid sensitive copolymer, resist composition and resist pattern forming method 有权
标题翻译：酸敏感共聚物，抗蚀剂组合物和抗蚀剂图案形成方法
公开(公告)号：US06451501B1
公开(公告)日：2002-09-17
申请号：US09661027
申请日：2000-09-13
申请人： Koji Nozaki , Ei Yano
发明人： Koji Nozaki , Ei Yano
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , G03F7/0397
摘要： A chemical amplification resist composition comprising an acid sensitive copolymer wherein the protecting group of a protected carboxyl group bonded to the side chain of a first monomer unit is represented by the following formula (I): where R1 represents hydrogen or another substituent, L represents a linking group and n is an integer of 1 to 4, and a second monomer unit has an acidic functional group protected with an acid-unstable protecting group, bonded to its side chain. It can be used to form fine resist patterns that have practically usable sensitivity and undergo no swelling.
摘要翻译：一种化学扩增抗蚀剂组合物，其包含酸敏感性共聚物，其中与第一单体单元的侧链键合的被保护的羧基的保护基由下式（I）表示：其中R1表示氢或另一取代基，L表示连接基团，n为1〜4的整数，第二单体单元具有与酸不稳定保护基保护的酸性官能团，键合至侧链。它可以用于形成具有实际可用灵敏度并且不溶胀的精细抗蚀剂图案。

73. 发明授权

US06278192B1 Semiconductor device with encapsulating material composed of silica 有权
标题翻译：具有由二氧化硅构成的封装材料的半导体器件
公开(公告)号：US06278192B1
公开(公告)日：2001-08-21
申请号：US09354734
申请日：1999-07-16
申请人： Yukio Takigawa , Ei Yano
发明人： Yukio Takigawa , Ei Yano
IPC分类号： H01L2150
CPC分类号： H01L23/293 , H01L2224/13023 , H01L2224/274 , H01L2924/01019 , H01L2924/01068 , H01L2924/10253 , H01L2924/12044 , H01L2924/00
摘要： A semiconductor device having enhanced reliability which is obtained by cutting a wafer encapsulated by an encapsulating material layer in such a manner that each of end faces of bumps for an external terminal is exposed, and a method of isolating a metal in an encapsulating material to allow measuring. The semiconductor device comprises a semiconductor element, bumps formed on a surface thereof for external terminals, and an encapsulating material layer, the encapsulating material layer being formed of an encapsulating material containing greater than 70% by weight and not greater than 90% by weight of fused silica, based on the total weight of the encapsulating material. The metal in the encapsulating material comprising a resin component and a fumed silica filler is isolated for measuring by adding the encapsulating material to a solvent capable of dissolving the resin component, separating solvent-insolubles from the solution in which the resin component has been dissolved, introducing the insolubles into a liquid having a specific gravity of 2.5 to 5.5 to disperse the insolubles, and then recovering the precipitate.
摘要翻译：一种具有增强的可靠性的半导体器件，其通过以这样一种方式切割由封装材料层封装的晶片而获得的，即外露端子的凸块的每个端面被暴露，以及隔离封装材料中的金属以允许测量。半导体器件包括半导体元件，在其外部端子的表面上形成的凸块和封装材料层，所述封装材料层由包含大于70重量％且不大于90重量％熔融二氧化硅，基于包封材料的总重量。通过将包封材料添加到能够溶解树脂成分的溶剂中，将溶剂不溶物从溶解有树脂成分的溶液中分离出来，分离包含树脂组分和热解法二氧化硅填料的包封材料中的金属，将不溶物引入比重为2.5〜5.5的液体中以分散不溶物，然后回收沉淀物。

74. 发明授权

US06200725B1 Chemically amplified resist compositions and process for the formation of resist patterns 失效
标题翻译：化学扩增抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US06200725B1
公开(公告)日：2001-03-13
申请号：US08969368
申请日：1997-11-28
申请人： Satoshi Takechi , Akiko Kotachi , Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Makino , Makoto Takahashi
发明人： Satoshi Takechi , Akiko Kotachi , Koji Nozaki , Ei Yano , Keiji Watanabe , Takahisa Namiki , Miwa Igarashi , Yoko Makino , Makoto Takahashi
IPC分类号： G03F7039
CPC分类号： G03F7/039 , G03F7/0045
摘要： Alkali-developable, chemically amplified resist composition which comprises an alkali-insoluble compound having a structural unit containing a protected alkali-soluble group in which unit a protective moiety of said protected alkali-soluble group contains an alicyclic hydrocarbon group having bonded to a carbon atom thereof a —CH2—R1′ group wherein R1′ is methyl, ethyl, propyl or isopropyl, and said alkali-soluble group is cleaved upon action of an acid generated from a photoacid generator used in combination with said compound, thereby releasing said protective moiety from the alkali-soluble group and converting said compound to an alkali-soluble one, and a photoacid generator capable of being decomposed upon exposure to a patterning radiation to thereby produce an acid capable of causing cleavage of said protective moiety. The resist composition can exhibit a high sensitivity (not more than 5 mJ/cm2) and therefore is particularly suitable for ArF lithography and also can exhibit stable patterning properties.
摘要翻译：碱可显影的化学增幅抗蚀剂组合物，其包含具有包含受保护的碱溶性基团的结构单元的碱不溶性化合物，其中所述被保护的碱溶性基团的保护部分含有与碳原子键合的脂环族烃基其中R 1'是甲基，乙基，丙基或异丙基，并且所述碱溶性基团在与所述化合物组合使用的光致酸产生剂产生的酸作用下被切割，由此释放所述保护部分从碱溶性基团中转化为碱溶性化合物，以及光致酸发生剂，其能够在暴露于图案化辐射时分解，从而产生能够导致所述保护部分裂解的酸。抗蚀剂组合物可以表现出高灵敏度（不大于5mJ / cm 2），因此特别适用于ArF光刻，并且还可呈现稳定的图案化性能。

75. 发明授权

US6027856A Negative-type resist composition and process for forming resist patterns 有权
标题翻译：负型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US6027856A
公开(公告)日：2000-02-22
申请号：US272400
申请日：1999-03-19
申请人： Koji Nozaki , Ei Yano
发明人： Koji Nozaki , Ei Yano
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027 , G03C1/725
CPC分类号： G03F7/038 , G03F7/0045
摘要： A negative-type resist composition which is developable in a basic aqueous solution, which comprises a film-formable, basic aqueous solution-soluble polymer with an alkali-soluble group, a compound with an allyl alcohol structure and a photoacid generator which when decomposed by absorption of image-forming radiation causes the compound with an allyl alcohol structure to become a protecting group for the alkali-soluble group, as well as a resist pattern-forming process which employs it. A basic aqueous solution can be used as the developing solution, and it is possible to form intricate patterns with a practical sensitivity and no swelling.
摘要翻译：在碱性水溶液中显影的负型抗蚀剂组合物，其包含具有碱溶性基团的可成膜的碱性水溶性可溶性聚合物，具有烯丙基醇结构的化合物和光酸产生剂，其当被图像形成辐射的吸收使得具有烯丙醇结构的化合物成为碱溶性基团的保护基，以及使用它的抗蚀剂图案形成方法。可以使用碱性水溶液作为显影溶液，并且可以形成具有实际灵敏度和无溶胀的复杂图案。

76. 发明授权

US5444811A Organic functional optical thin film, fabrication and use thereof 失效
标题翻译：有机功能光学薄膜，其制造和使用
公开(公告)号：US5444811A
公开(公告)日：1995-08-22
申请号：US858074
申请日：1992-03-26
申请人： Tetsuzo Yoshimura , Ei Yano , Satoshi Tatsuura , Wataru Sotoyama
发明人： Tetsuzo Yoshimura , Ei Yano , Satoshi Tatsuura , Wataru Sotoyama
IPC分类号： C08G59/00 , C08G59/22 , C08G59/28 , C08G59/50 , C08G69/00 , C08G73/00 , C08G77/04 , C08G77/60 , G02F1/35 , G02F1/361 , H01L51/05 , H01L51/30 , H01L51/40 , G02B6/12 , B05D5/06
CPC分类号： H01L51/0093 , B82Y10/00 , C08G59/22 , C08G59/28 , C08G59/504 , C08G69/00 , C08G73/00 , C08G77/60 , G02F1/3616 , G02F1/3617 , H01L51/0002 , H01L51/0035 , H01L51/0595 , H01L51/0508
摘要： An organic functional thin film is comprised of a polymer of a molecule having two or more identical or different groups selected from the group consisting of a carbonyloxycarbonyl group, a carboxylic acid group, a carboxylic acid halide group, a carboxyl group, a --COCl group, an --NCO group, a --CHO group and an epoxy group and a molecule having two or more identical or different groups selected from the group consisting of an amino group, groups containing at least one amino proton, an alkylamino group, a silylated alkylamino group, a carboxylic acid group and a hydroxyl group, formed by vapor-phase deposition, the polymer-forming molecules having at least partially one or more donor and/or acceptor groups. Similar organic thin films are also disclosed. These organic thin films are useful for various electronic applications.
摘要翻译：有机功能性薄膜由具有两个或更多个相同或不同基团的分子的聚合物组成，所述基团选自羰基氧基羰基，羧酸基，羧酸卤化物基团，羧基，-COCl基团，-NCO基，-CHO基和环氧基，以及具有两个以上相同或不同基团的分子，所述基团选自氨基，含有至少一个氨基质子的基团，烷基氨基，甲硅烷基化烷基氨基基团，羧酸基团和羟基，通过气相沉积形成，聚合物形成分子具有至少部分一个或多个给体和/或受体基团。还公开了类似的有机薄膜。这些有机薄膜可用于各种电子应用。

77. 发明授权

US07985700B2 Composition for forming insulating film and method for fabricating semiconductor device 有权
标题翻译：用于形成绝缘膜的组合物和用于制造半导体器件的方法
公开(公告)号：US07985700B2
公开(公告)日：2011-07-26
申请号：US12314279
申请日：2008-12-08
申请人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
发明人： Shirou Ozaki , Yoshihiro Nakata , Ei Yano
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31633 , C09D183/14 , C09D183/16 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02211 , H01L21/02222 , H01L21/02282 , H01L21/02348 , H01L21/31695
摘要： A method for fabricating a semiconductor device utilizing the step of forming a first insulating film of a porous material over a substrate; the step of forming on the first insulating film a second insulating film containing a silicon compound containing Si—CH3 bonds by 30-90%, and the step of irradiating UV radiation with the second insulating film formed on the first insulating film to cure the first insulating film. Thus, UV radiation having the wavelength which eliminates CH3 groups is sufficiently absorbed by the second insulating film, whereby the first insulating film is highly strengthened with priority by the UV cure, and the first insulating film can have the film density increased without having the dielectric constant increased.
摘要翻译：一种制造半导体器件的方法，该半导体器件利用在衬底上形成多孔材料的第一绝缘膜的步骤; 在第一绝缘膜上形成包含含有Si-CH3键的硅化合物30-90％的第二绝缘膜的步骤，以及用形成在第一绝缘膜上的第二绝缘膜照射UV辐射的步骤，以固化第一绝缘膜绝缘膜。因此，具有消除CH 3基团的波长的紫外线辐射被第二绝缘膜充分吸收，由此通过UV固化优先地高度强化第一绝缘膜，并且第一绝缘膜可以具有不增加电介质的膜密度常数增加。

78. 发明申请

US20100227278A1 MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造工艺
公开(公告)号：US20100227278A1
公开(公告)日：2010-09-09
申请号：US12783244
申请日：2010-05-19
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/20
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

79. 发明申请

US20100193841A1 METHOD FOR FORMING RESIST PATTERN AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：形成电阻图案的方法和制造半导体器件的方法
公开(公告)号：US20100193841A1
公开(公告)日：2010-08-05
申请号：US12756914
申请日：2010-04-08
申请人： Junichi Kon , Ei Yano
发明人： Junichi Kon , Ei Yano
IPC分类号： H01L29/778 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/114 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/128 , Y10S430/143
摘要： The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.
摘要翻译：抗蚀剂材料包含具有对波长小于300nm的曝光光具有吸收峰的光酸产生器和具有波长为300nm或更大的曝光光的吸收峰的第二光酸产生器。形成抗蚀剂图案的方法包括用于选择性曝光的步骤，其将抗蚀剂材料的涂膜暴露于波长小于300nm的曝光光，以及通过使用具有波长小于300nm的曝光光来选择性曝光的步骤 300nm以上。半导体器件包括由抗蚀剂图案形成的图案。用于形成半导体器件的方法包括通过上述制造方法在下层形成抗蚀剂图案的步骤，以及通过使用抗蚀剂图案作为掩模通过蚀刻对下层进行图案化的步骤。

80. 发明授权

US07723016B2 Method for forming resist pattern and method for manufacturing a semiconductor device 有权
标题翻译：用于形成抗蚀剂图案的方法和用于制造半导体器件的方法
公开(公告)号：US07723016B2
公开(公告)日：2010-05-25
申请号：US12292170
申请日：2008-11-13
申请人： Junichi Kon , Ei Yano
发明人： Junichi Kon , Ei Yano
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/114 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/128 , Y10S430/143
摘要： The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.
摘要翻译：抗蚀剂材料包含具有对波长小于300nm的曝光光具有吸收峰的光酸产生器和具有波长为300nm或更大的曝光光的吸收峰的第二光酸产生器。形成抗蚀剂图案的方法包括用于选择性曝光的步骤，其将抗蚀剂材料的涂膜暴露于波长小于300nm的曝光光，以及通过使用具有波长为 300nm以上。半导体器件包括由抗蚀剂图案形成的图案。用于形成半导体器件的方法包括通过上述制造方法在下层形成抗蚀剂图案的步骤，以及通过使用抗蚀剂图案作为掩模通过蚀刻对下层进行图案化的步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式