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1. 发明申请

US20090081593A1 Method for forming resist pattern and method for manufacturing a semiconductor device 有权
标题翻译：用于形成抗蚀剂图案的方法和用于制造半导体器件的方法
公开(公告)号：US20090081593A1
公开(公告)日：2009-03-26
申请号：US12292170
申请日：2008-11-13
申请人： Junichi Kon , Ei Yano
发明人： Junichi Kon , Ei Yano
IPC分类号： H01L21/02 , G03F7/20
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/114 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/128 , Y10S430/143
摘要： The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.
摘要翻译：抗蚀剂材料包含具有对波长小于300nm的曝光光具有吸收峰的光酸产生器和具有波长为300nm或更大的曝光光的吸收峰的第二光酸产生器。形成抗蚀剂图案的方法包括用于选择性曝光的步骤，其将抗蚀剂材料的涂膜暴露于波长小于300nm的曝光光，以及通过使用具有波长为 300nm以上。半导体器件包括由抗蚀剂图案形成的图案。用于形成半导体器件的方法包括通过上述制造方法在下层形成抗蚀剂图案的步骤，以及通过使用抗蚀剂图案作为掩模通过蚀刻对下层进行图案化的步骤。

2. 发明授权

US06773867B2 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices 有权
公开(公告)号：US06773867B2
公开(公告)日：2004-08-10
申请号：US10291723
申请日：2002-11-12
申请人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
IPC分类号： G03C500
CPC分类号： H01L21/0274 , G03F7/0045 , G03F7/038 , H01L21/02118 , H01L21/02282 , H01L21/28123 , H01L21/312 , Y10S430/106 , Y10S430/111 , Y10S430/128
摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

3. 发明授权

US06465137B2 Resist composition and pattern forming process 有权
标题翻译：抗蚀组成和图案形成过程
公开(公告)号：US06465137B2
公开(公告)日：2002-10-15
申请号：US09288781
申请日：1999-04-09
申请人： Keiji Watanabe , Miwa Kozawa , Ei Yano , Takahisa Namiki , Koji Nozaki , Junichi Kon , Eiichi Hoshino , Masahiro Uraguchi , Toshikatsu Minagawa , Yuichi Yamamoto
发明人： Keiji Watanabe , Miwa Kozawa , Ei Yano , Takahisa Namiki , Koji Nozaki , Junichi Kon , Eiichi Hoshino , Masahiro Uraguchi , Toshikatsu Minagawa , Yuichi Yamamoto
IPC分类号： G03F900
CPC分类号： G03F7/004 , G03F7/0045
摘要： A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.
摘要翻译：抗蚀剂组合物，在抗蚀剂中含有熔点为160℃以上的添加剂，不含芳香环，分子大小不大于且可溶于抗蚀剂的显影液中相对于100重量份的抗蚀剂的固体重量为1-50重量份，以及使用它的图案形成方法。从而可以获得高分辨率抗蚀剂图案。

4. 发明授权

US07830013B2 Material for forming adhesion reinforcing layer, adhesion reinforcing layer, semiconductor device, and manufacturing method thereof 有权
标题翻译：用于形成粘合增强层的材料，粘附增强层，半导体器件及其制造方法
公开(公告)号：US07830013B2
公开(公告)日：2010-11-09
申请号：US11395263
申请日：2006-04-03
申请人： Junichi Kon , Ei Yano , Yoshihiro Nakata , Tadahiro Imada
发明人： Junichi Kon , Ei Yano , Yoshihiro Nakata , Tadahiro Imada
IPC分类号： H01L23/12 , H01L23/48 , H01L21/4763 , H01L51/40
CPC分类号： C09D183/04 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02304 , H01L21/3122 , H01L21/76807
摘要： The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.
摘要翻译：本发明的目的在于提供：一种用于形成粘合增强层的材料，其可以增强低介电常数膜，特别是含有无机材料的低介电常数膜和其它构件之间的粘附性; 由所述材料形成的附着增强层，具有优异的附着力; 具有粘合增强层的快速且高可靠性的半导体器件; 及其制造方法。用于形成粘合增强层的材料含有至少一种具有碱性官能团的有机烷氧基硅烷，碱性添加剂和有机烷氧基硅烷。粘合增强层由所述材料形成。半导体器件的制造方法包括形成低介电常数膜的方法，并且至少在形成低介电常数膜的工艺之前或之后，与所述材料形成粘合增强层的工艺。

5. 发明申请

US20080274431A1 Resist pattern swelling material, and method for patterning using same 有权
标题翻译：抗蚀剂图案膨胀材料，以及使用其形成图案的方法
公开(公告)号：US20080274431A1
公开(公告)日：2008-11-06
申请号：US12213820
申请日：2008-06-25
申请人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/20
CPC分类号： H01L27/11526 , G03F7/0048 , G03F7/095 , G03F7/40 , H01L21/31138 , H01L27/105 , H01L27/11543
摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
摘要翻译：为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

6. 发明授权

US08334091B2 Resist pattern swelling material, and method for patterning using same 有权
标题翻译：抗蚀剂图案膨胀材料，以及使用其形成图案的方法
公开(公告)号：US08334091B2
公开(公告)日：2012-12-18
申请号：US12213820
申请日：2008-06-25
申请人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/00
CPC分类号： H01L27/11526 , G03F7/0048 , G03F7/095 , G03F7/40 , H01L21/31138 , H01L27/105 , H01L27/11543
摘要： To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.
摘要翻译：为了提供一种在真空深紫外线区域中利用光刻法在图案化技术中容易地形成超过曝光极限的微观图案的方法，通过混合水溶性或碱溶性组合物，包含树脂和交联剂以及非离子界面活性剂和选自醇基，链或环酯，酮基，链或环醚基有机溶剂的有机溶剂中的任一种。

7. 发明授权

US07189783B2 Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof 有权
标题翻译：抗蚀剂图案增厚材料，抗蚀剂图案及其形成方法以及半导体器件及其制造方法
公开(公告)号：US07189783B2
公开(公告)日：2007-03-13
申请号：US10305258
申请日：2002-11-27
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： C03C15/00 , C03C25/68 , C03F1/00
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

8. 发明授权

US06794113B2 Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices 有权
标题翻译：负电阻组合物，形成抗蚀剂图案的方法和用于生产电子器件的方法
公开(公告)号：US06794113B2
公开(公告)日：2004-09-21
申请号：US10291671
申请日：2002-11-12
申请人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
发明人： Koji Nozaki , Takahisa Namiki , Ei Yano , Junichi Kon , Miwa Kozawa
IPC分类号： G03F7004
CPC分类号： H01L21/0274 , G03F7/0045 , G03F7/038 , H01L21/02118 , H01L21/02282 , H01L21/28123 , H01L21/312 , Y10S430/106 , Y10S430/111 , Y10S430/128
摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.
摘要翻译：负性抗蚀剂组合物包含（1）本身可溶于碱性水溶液的成膜聚合物，并且在分子中含有具有碱溶性基团的第一单体单元和在侧链上具有醇结构的第二单体单元其能够与碱溶性基团反应，和（2）光致酸产生剂，当通过图像形成辐射的吸收分解时，能够产生可引起第二单体的醇结构之间的反应的酸单元和第一单体单元的碱溶性基团，或保护第一单体单元的碱溶性基团。抗蚀剂组合物可以形成具有实际灵敏度和无溶胀的复杂的抗蚀剂图案。

9. 发明授权

US08349542B2 Manufacturing process of semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US08349542B2
公开(公告)日：2013-01-08
申请号：US12783244
申请日：2010-05-19
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/26
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

10. 发明授权

US08057986B2 Method for forming resist pattern and method for manufacturing a semiconductor device 有权
标题翻译：用于形成抗蚀剂图案的方法和用于制造半导体器件的方法
公开(公告)号：US08057986B2
公开(公告)日：2011-11-15
申请号：US12756914
申请日：2010-04-08
申请人： Junichi Kon , Ei Yano
发明人： Junichi Kon , Ei Yano
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/40
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/114 , Y10S430/115 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/128 , Y10S430/143
摘要： The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.
摘要翻译：抗蚀剂材料包含具有对波长小于300nm的曝光光具有吸收峰的光酸产生器和具有波长为300nm或更大的曝光光的吸收峰的第二光酸产生器。形成抗蚀剂图案的方法包括用于选择性曝光的步骤，其将抗蚀剂材料的涂膜暴露于波长小于300nm的曝光光，以及通过使用具有波长为 300nm以上。半导体器件包括由抗蚀剂图案形成的图案。用于形成半导体器件的方法包括通过上述制造方法在下层形成抗蚀剂图案的步骤，以及通过使用抗蚀剂图案作为掩模通过蚀刻对下层进行图案化的步骤。

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