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1. 发明授权

US08945816B2 Method for forming resist pattern, semiconductor device and production method thereof 有权
标题翻译：形成抗蚀剂图案的方法，半导体器件及其制造方法
公开(公告)号：US08945816B2
公开(公告)日：2015-02-03
申请号：US13339761
申请日：2011-12-29
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/26 , G03F7/40 , H01L21/027 , H01L21/311
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A method for producing a semiconductor device includes forming a resist pattern by coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.
摘要翻译：一种制造半导体器件的方法包括：通过涂覆抗蚀剂图案增厚材料以覆盖抗蚀剂图案的表面，烘烤抗蚀剂图案增厚材料，以及显影和分离抗蚀剂图案增厚材料来形成抗蚀剂图案，其中至少一个涂层，烘烤和显影进行多次。

2. 发明授权

US08420288B2 Resist pattern thickening material, method for forming resist pattern, semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08420288B2
公开(公告)日：2013-04-16
申请号：US11831576
申请日：2007-07-31
申请人： Koji Nozaki , Miwa Kozawa
发明人： Koji Nozaki , Miwa Kozawa
IPC分类号： G03F7/004
CPC分类号： G03F7/38 , C08K5/17 , G03F7/40 , H01L21/0273 , H01L21/0338 , H01L21/3081 , H01L21/31144 , H01L27/105 , H01L27/11526 , H01L27/11543 , H01L29/06
摘要： The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened, e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

3. 发明授权

US08198014B2 Resist cover film forming material, resist pattern forming method, and electronic device and method for manufacturing the same 有权
标题翻译：抗蚀覆盖膜形成材料，抗蚀剂图案形成方法和电子器件及其制造方法
公开(公告)号：US08198014B2
公开(公告)日：2012-06-12
申请号：US11831524
申请日：2007-07-31
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki
IPC分类号： G03F7/11 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： C08G77/14 , C09D183/06 , G03F7/0752 , G03F7/11 , G03F7/2041 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , Y10T428/24802
摘要： To provide a material including: a silicon-containing polymer having at least an alkali-soluble group and is represented by the following general formula (1); and an organic solvent capable of dissolving the silicon-containing polymer. (SiO4/2)a(R1tSiO(4-t)/2)b(O1/2R2)c general formula (1) where R1 represents at least one of a monovalent organic group, hydrogen atom and hydroxyl group, R2 represents at least one of a monovalent organic group and hydrogen atom (where R1 and R2 each may appear twice or more, and at least one of R1 and R2 contains an alkali-soluble group), “t” represents an integer of 1 to 3, “a,” “b,” and “c” represent the relative proportions of their units (where a≧0, b≧0 and c≧0, and “a,” “b,” and “c” are not 0 at the same time), and (R1tSiO(4-t)/2)b may appear twice or more.
摘要翻译：提供一种材料，其包括：至少具有碱溶性基团的含硅聚合物，由以下通式（1）表示; 和能够溶解含硅聚合物的有机溶剂。（SiO 4/2）a（R 1 t SiO（4-t）/ 2）b（O 1 / 2R 2）c通式（1）其中R 1表示一价有机基团，氢原子和羟基中的至少一个，一价有机基团和氢原子（其中R 1和R 2各自可以出现两次以上，并且R 1和R 2中的至少一个含有碱溶性基团），“t”表示1〜3的整数，“a ，“b”和“c”表示它们的单位的相对比例（其中a≥0，b≥0和c≥0，“a”，“b”和“c”不为0 时间）和（R1tSiO（4-t）/ 2）b可能出现两次或更多次。

4. 发明申请

US20120098103A1 METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：用于形成电阻图案的方法，半导体器件及其制造方法
公开(公告)号：US20120098103A1
公开(公告)日：2012-04-26
申请号：US13339761
申请日：2011-12-29
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： H01L29/02 , H01L21/31
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/31144
摘要： A method for producing a semiconductor device includes forming a resist pattern by coating a resist pattern thickening material to cover the surface of the resist pattern, baking the resist pattern thickening material, and developing and separating the resist pattern thickening material, wherein at least one of the coating, the baking and the developing is carried out plural times.
摘要翻译：一种制造半导体器件的方法包括：通过涂覆抗蚀剂图案增厚材料以覆盖抗蚀剂图案的表面，烘烤抗蚀剂图案增厚材料，以及显影和分离抗蚀剂图案增厚材料来形成抗蚀剂图案，其中至少一个涂层，烘烤和显影进行多次。

5. 发明授权

US08129092B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same 有权
标题翻译：抗蚀剂图案增厚材料和抗蚀剂图案形成方法，半导体装置及其制造方法
公开(公告)号：US08129092B2
公开(公告)日：2012-03-06
申请号：US11362211
申请日：2006-02-27
申请人： Miwa Kozawa , Koji Nozaki
发明人： Miwa Kozawa , Koji Nozaki
IPC分类号： G03F7/004 , G03F7/085
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/76816
摘要： The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern such as an ArF resist having a line pattern or the like, can thicken the resist pattern regardless of the size of the resist pattern; which has excellent etching resistance; and which is suited for forming a fine space pattern or the like, exceeding the exposure limits. The present invention also provides a process for forming a resist pattern and a method for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
摘要翻译：本发明提供可以利用ArF准分子激光的抗蚀剂图案增稠材料，当施加在诸如具有线图案等的ArF抗蚀剂的抗蚀剂图案上时，可以使抗蚀剂图案增厚，而与抗蚀剂图案的尺寸无关; 具有优异的耐蚀性; 并且适合于形成超过曝光极限的精细空间图案等。本发明还提供了形成抗蚀剂图案的方法和制造半导体器件的方法，其中适当地利用本发明的抗蚀剂图案增稠材料。

6. 发明授权

US07913281B2 Digital broadcast recording device 有权
标题翻译：数字广播录音设备
公开(公告)号：US07913281B2
公开(公告)日：2011-03-22
申请号：US11861004
申请日：2007-09-25
申请人： Koji Nozaki , Akihiro Yuba
发明人： Koji Nozaki , Akihiro Yuba
IPC分类号： G06F3/00 , H04N5/76 , H04N5/222
CPC分类号： H04N5/50 , H04N5/76 , H04N5/781 , H04N5/85 , H04N9/8042 , H04N9/8715 , H04N21/4147 , H04N21/4334 , H04N21/4345 , H04N21/4383 , H04N21/485
摘要： This digital broadcast recording device includes a tuner unit, a channel table recording unit, an image output unit, an OSD generation unit, an actuation unit, and a channel presetting unit. The channel table recording unit records a channel table. An auto presetting unit sets virtual channels. If the number of a virtual channel is duplicated upon several physical channels, the channel presetting unit commands the OSD generation unit to display an OSD to the effect that this number is duplicated. And, when the actuation unit has received a predetermined actuation input, the channel presetting unit searches for a vacant channel.
摘要翻译：该数字广播记录装置包括调谐器单元，频道表记录单元，图像输出单元，OSD生成单元，致动单元和频道预设单元。通道表记录单元记录通道表。自动预设单元设置虚拟通道。如果虚拟频道的数量在多个物理频道上被复制，则频道预设单元命令OSD生成单元显示OSD，以使该号码重复。并且，当致动单元已经接收到预定的致动输入时，通道预设单元搜索空闲通道。

7. 发明授权

US07897321B2 Monomer, resin, resist composition using the resin, and method producing semiconductor device using the resist composition 有权
标题翻译：使用该树脂的单体，树脂，抗蚀剂组合物，以及使用该抗蚀剂组合物的半导体装置的制造方法
公开(公告)号：US07897321B2
公开(公告)日：2011-03-01
申请号：US12360292
申请日：2009-01-27
申请人： Koji Nozaki
发明人： Koji Nozaki
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C08F28/06 , C07D335/02
CPC分类号： C07D335/02 , Y10S430/111
摘要： A monomer, which is represented by General Formula I: wherein, each of R1 and R3 is either —H group or —CH3 group, and R1 and R3 are identical or different to each other; R2 is either a phenyl group or an adamanthyl group; and Q1 is a C1-4 perfluoroalkyl group.
摘要翻译：由通式I表示的单体：其中，R1和R3各自为-H基或-CH3基，R1和R3彼此相同或不同; R2是苯基或金刚烷基; 且Q1是C1-4全氟烷基。

8. 发明授权

US07799508B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for manufacturing the same 有权
标题翻译：抗蚀剂图案增厚材料和抗蚀剂图案形成方法，半导体器件及其制造方法
公开(公告)号：US07799508B2
公开(公告)日：2010-09-21
申请号：US12453590
申请日：2009-05-15
申请人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki
发明人： Koji Nozaki , Miwa Kozawa , Takahisa Namiki
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G11B5/3163 , G03F7/2024 , G03F7/40 , H01L21/0274 , H01L21/0275 , H01L27/115 , H01L27/11526 , H01L27/11543 , Y10S430/106 , Y10S430/114
摘要： The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.
摘要翻译：本发明提供可以利用ArF准分子激光的抗蚀剂图案增稠材料，当涂覆在例如以线和间隔图案的形式加厚的抗蚀剂图案上时，可以增加抗蚀剂图案以使其变厚，而不管要加厚的抗蚀剂图案的尺寸如何; 并且适合于形成精细空间图案等，超过曝光限制。本发明还提供了形成抗蚀剂图案的方法和用于制造半导体器件的方法，其中适当地利用本发明的抗蚀剂图案增厚材料。

9. 发明申请

US20100227278A1 MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造工艺
公开(公告)号：US20100227278A1
公开(公告)日：2010-09-09
申请号：US12783244
申请日：2010-05-19
申请人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
发明人： Miwa Kozawa , Koji Nozaki , Takahisa Namiki , Junichi Kon , Ei Yano
IPC分类号： G03F7/20
CPC分类号： H01L27/11526 , G03F7/0035 , G03F7/40 , G11B5/17 , G11B5/312 , G11B5/3163 , H01L21/0271 , H01L21/0273 , H01L21/32139 , H01L27/105 , H01L27/115 , H01L27/11543
摘要： A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.
摘要翻译：抗蚀剂图案增厚材料具有树脂，交联剂和具有环状结构的化合物，或者部分具有环状结构的树脂。抗蚀剂图案具有在抗蚀剂图案上的表面层，在相同条件下，将表面层的抗蚀剂图案的蚀刻速率（nm / s）比为1.1以上，或将表面层与抗蚀剂图案加厚。形成抗蚀剂图案的方法包括在形成要在其表面上加厚的抗蚀剂图案之后施加增稠材料。半导体器件具有由抗蚀剂图案形成的图案。制造半导体器件的方法在形成要加厚的抗蚀剂图案之后，将增厚材料施加到抗蚀剂图案的表面以使其变厚，并通过蚀刻将该图案图案化为掩模。

10. 发明授权

US07652964B2 Optical disk device 失效
标题翻译：光盘装置
公开(公告)号：US07652964B2
公开(公告)日：2010-01-26
申请号：US11802991
申请日：2007-05-29
申请人： Koji Nozaki
发明人： Koji Nozaki
IPC分类号： G11B27/36
CPC分类号： G11B20/1217 , G11B2220/2537
摘要： An optical disk device includes a recording and reading means which performs recording of data upon, or reading of data from, an optical disk upon which are stored an ID, number of times information, and recording management information. Furthermore, when recording of data upon the optical disk has been completed, this optical disk device stores the recording management information, the number of times information, and the ID of the optical disk in a storage means in mutual correspondence. And, when the optical disk has been mounted, the recording and reading means decides whether a first situation or a second situation holds, using the ID and the number of times information of the optical disk as a key. And, if the second situation holds, the recording and reading means utilizes the recording management information in the storage means.
摘要翻译：光盘装置包括记录和读取装置，其在存储有ID，次数信息和记录管理信息的光盘上执行数据记录或从其读取数据。此外，当光盘上的数据记录完成时，该光盘装置将记录管理信息，次数信息和光盘的ID相互对应地存储在存储装置中。并且，当安装光盘时，记录和读取装置使用光盘的ID和次数作为关键字来确定是否保持第一情况或第二情况。并且，如果第二种情况成立，记录和读取装置利用存储装置中的记录管理信息。

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