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71. 发明申请

US20120080740A1 CHARGE TRAPPING DIELECTRIC STRUCTURES 有权
标题翻译：电荷捕捉电介质结构
公开(公告)号：US20120080740A1
公开(公告)日：2012-04-05
申请号：US13323633
申请日：2011-12-12
申请人： Leonard Forbes , Kie Y. Ahn
发明人： Leonard Forbes , Kie Y. Ahn
IPC分类号： H01L29/792
CPC分类号： H01L29/518 , H01L29/4234 , H01L29/513 , H01L29/792
摘要： A dielectric structure may be arranged having a thin nitrided surface of an insulator with a charge blocking insulator over the nitrided surface. The insulator may be formed of a number of different insulating materials such as a metal oxide, a metal oxycarbide, a semiconductor oxide, or oxycarbide. In an embodiment, the dielectric structure may be formed by nitridation of a surface of an insulator using ammonia and deposition of a blocking insulator having a larger band gap than the insulator. The dielectric structure may form part of a memory device, as well as other devices and systems.
摘要翻译：介电结构可以布置成具有在氮化表面上的电荷阻挡绝缘体的绝缘体的薄氮化表面。绝缘体可以由许多不同的绝缘材料形成，例如金属氧化物，金属碳氧化物，半导体氧化物或碳氧化物。在一个实施例中，电介质结构可以通过使用氨对绝缘体的表面进行氮化和沉积具有比绝缘体更大的带隙的阻挡绝缘体来形成。电介质结构可以形成存储器件的一部分，以及其他器件和系统。

72. 发明申请

US20120080676A1 Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors 审中-公开
公开(公告)号：US20120080676A1
公开(公告)日：2012-04-05
申请号：US13373074
申请日：2011-11-03
申请人： Leonard Forbes
发明人： Leonard Forbes
IPC分类号： H01L31/0376 , H01L31/036 , H01L31/0232
CPC分类号： H01L31/02327 , H01L31/02366 , H01L31/03685 , H01L31/03762 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

73. 发明申请

US20120074480A1 METHOD OF FORMING LUTETIUM AND LANTHANUM DIELECTRIC STRUCTURES 有权
标题翻译：形成LUTETIUM和LANTHANUM介电结构的方法
公开(公告)号：US20120074480A1
公开(公告)日：2012-03-29
申请号：US13310245
申请日：2011-12-02
申请人： Kie Y. Ahn , Leonard Forbes
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L29/78
CPC分类号： H01L21/28273 , B82Y10/00 , C23C16/40 , C23C16/45525 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3142
摘要： Methods of forming dielectric structures are shown. Methods of forming dielectric structures are shown that include lutetium oxide and lanthanum aluminum oxide crystals embedded within the lutetium oxide. Specific methods shown include monolayer deposition which yields process improvements such as chemistry control, step coverage, crystallinity/microstructure control.
摘要翻译：显示形成电介质结构的方法。示出了形成介电结构的方法，其包括氧化镥中氧化镥和氧化镧氧化物晶体。所显示的具体方法包括单层沉积，其产生过程改进，例如化学控制，步骤覆盖，结晶度/微结构控制。

74. 发明授权

US08102013B2 Lanthanide doped TiOx films 有权
标题翻译：掺镧系TiOx薄膜
公开(公告)号：US08102013B2
公开(公告)日：2012-01-24
申请号：US12401404
申请日：2009-03-10
申请人： Kie Y. Ahn , Leonard Forbes
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L21/02
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45529 , C23C16/45531 , H01L21/02186 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/28194 , H01L21/28273 , H01L21/28282 , H01L21/3115 , H01L21/3141 , H01L21/31604 , H01L29/4234 , H01L29/513 , H01L29/517
摘要： The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOX) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety of electronic devices. The dielectric structure is formed by depositing titanium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing a layer of a lanthanide dopant, and repeating to form a sequentially deposited interleaved structure. Such a dielectric layer may be used as the gate insulator of a MOSFET, as a capacitor dielectric, or as a tunnel gate insulator in flash memories, because the high dielectric constant (high-k) of the layer provides the functionality of a thinner silicon dioxide layer, and because the reduced leakage current of the dielectric layer when the percentage of the lanthanide element doping is optimized.
摘要翻译：使用原子层沉积（ALD）形成掺杂有镧系元素（例如钐，铕，钆，钬，铒和and）的氧化钛（TiOX）的非晶电介质层，产生可靠的结构，用于各种电子设备。通过使用前体化学品将原子层沉积氧化钛沉积到衬底表面上，然后沉积镧系元素掺杂剂层并重复以形成顺序沉积的交错结构而形成电介质结构。这样的电介质层可以用作MOSFET的栅极绝缘体，作为电容器电介质，或者作为闪存中的隧道栅极绝缘体，因为该层的高介电常数（高k）提供更薄的硅的功能并且由于优化了镧系元素掺杂的百分比时介电层的漏电流减小。

75. 发明申请

US20110287601A1 METHODS OF FORMING A DIELECTRIC CONTAINING DYSPROSIUM DOPED HAFNIUM OXIDE 有权
标题翻译：形成含电介质掺杂氧化镝的方法
公开(公告)号：US20110287601A1
公开(公告)日：2011-11-24
申请号：US13195487
申请日：2011-08-01
申请人： Kie Y. Ahn , Leonard Forbes
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L21/316 , H01L21/20 , H01L21/28
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/45529 , H01L21/022 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/78
摘要： The use of a monolayer or partial monolayer sequencing process, such as atomic layer deposition, to form a dielectric layer of hafnium oxide doped with dysprosium and a method of fabricating such a combination produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure can include depositing hafnium oxide onto a substrate surface using precursor chemicals, followed by depositing dysprosium oxide onto the substrate using precursor chemicals, and repeating to form a thin laminate structure. A dielectric layer of dysprosium doped hafnium oxide may be used as the gate insulator of a MOSFET, as a capacitor dielectric in a DRAM, as a tunnel gate insulator in flash memories, or as a dielectric in NROM devices, because the high dielectric constant (high-k) of the film provides the functionality of a thinner silicon dioxide film, and because the reduced leakage current of the dielectric layer when the percentage of dysprosium doping is optimized improves memory function.
摘要翻译：使用单层或部分单层测序方法（例如原子层沉积）来形成掺杂有镝的氧化铪的电介质层和制造这种组合的方法产生用于各种电子器件的可靠结构。形成电介质结构可以包括使用前体化学物质将氧化铪沉积到衬底表面上，然后使用前体化学品将氧化镝沉积到衬底上，并重复形成薄的层压结构。镝掺杂氧化铪的电介质层可用作MOSFET的栅极绝缘体，作为DRAM中的电容器电介质，作为闪存中的隧道栅极绝缘体或NROM器件中的电介质，因为高介电常数（高k）的薄膜提供更薄的二氧化硅膜的功能，并且由于优化了镝掺杂的百分比时介电层的漏电流减小，从而提高记忆功能。

76. 发明申请

US20110223707A1 Backside Illuminated Image Sensor 有权
标题翻译：背面照明图像传感器
公开(公告)号：US20110223707A1
公开(公告)日：2011-09-15
申请号：US12969321
申请日：2010-12-15
申请人： Jaroslav Hynecek , Leonard Forbes , Homayoon Haddad , Thomas Joy
发明人： Jaroslav Hynecek , Leonard Forbes , Homayoon Haddad , Thomas Joy
IPC分类号： H01L31/18
CPC分类号： H01L27/1464 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14627 , H01L27/14632 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/14687 , H01L27/14698 , H01L2924/0002 , H01L2924/00
摘要： A backside illuminated image sensor includes a substrate, a backside passivation layer disposed on backside of the substrate, and a transparent conductive layer disposed on the backside passivation layer.
摘要翻译：背面照明图像传感器包括衬底，设置在衬底背面的背面钝化层和设置在背面钝化层上的透明导电层。

77. 发明授权

US07989362B2 Hafnium lanthanide oxynitride films 有权
标题翻译：铪镧系氮氧化物薄膜
公开(公告)号：US07989362B2
公开(公告)日：2011-08-02
申请号：US12505963
申请日：2009-07-20
申请人： Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
发明人： Leonard Forbes , Kie Y. Ahn , Arup Bhattacharyya
IPC分类号： H01L21/20 , H01L23/62 , H01L27/108 , H01L29/78 , H01L29/94
CPC分类号： H01L21/02194 , C23C16/308 , C23C16/45529 , C23C16/45531 , H01L21/022 , H01L21/0228 , H01L21/02326 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28194 , H01L21/3142 , H01L21/3145 , H01L21/31645 , H01L29/517 , H01L29/518 , H01L29/6653 , H01L29/66545 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a hafnium lanthanide oxynitride film.
摘要翻译：形成电子设备的电子设备和方法包括用于各种电子系统的基板上的铪镧系元素氮氧化物膜。铪镧系氮氧化物膜可以构成为一个或多个单层。金属电极可以设置在含有铪镧系元素氮氧化物膜的电介质上。

78. 发明授权

US07989311B2 Strained semiconductor by full wafer bonding 有权
标题翻译：应变半导体通过全晶圆键合
公开(公告)号：US07989311B2
公开(公告)日：2011-08-02
申请号：US12243617
申请日：2008-10-01
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L21/425 , H01L21/76
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
摘要翻译：本公开的一个方面涉及一种用应变半导体形成晶片的方法。在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变层。本文提供了其它方面和实施例。

79. 发明授权

US07989285B2 Method of forming a film containing dysprosium oxide and hafnium oxide using atomic layer deposition 有权
标题翻译：使用原子层沉积法形成含有氧化镝和氧化铪的膜的方法
公开(公告)号：US07989285B2
公开(公告)日：2011-08-02
申请号：US12390920
申请日：2009-02-23
申请人： Kie Y. Ahn , Leonard Forbes
发明人： Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L21/8242
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/45529 , H01L21/022 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/78
摘要： The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO2) doped with dysprosium (Dy) and a method of fabricating such a combination gate and dielectric layer produces a reliable structure for use in a variety of electronic devices. Forming the dielectric structure includes depositing hafnium oxide using atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing dysprosium oxide onto the substrate using precursor chemicals, and repeating to form the thin laminate structure. A dielectric layer of dysprosium doped hafnium oxide may be used as the gate insulator of a MOSFET, as a capacitor dielectric in a DRAM, as a tunnel gate insulator in flash memories, or as a dielectric in NROM devices, because the high dielectric constant (high-k) of the film provides the functionality of a thinner silicon dioxide film, and because the reduced leakage current of the dielectric layer when the percentage of dysprosium doping is optimized improves memory function.
摘要翻译：使用原子层沉积（ALD）形成掺杂有镝（Dy）的氧化铪（HfO 2）的电介质层和制造这种组合栅极和电介质层的方法产生用于各种电子器件的可靠结构。形成电介质结构包括使用前体化学品将原子层沉积物沉积到衬底表面上，然后使用前体化学品将氧化镝沉积到衬底上，并重复形成薄的层压结构。镝掺杂氧化铪的电介质层可用作MOSFET的栅极绝缘体，作为DRAM中的电容器电介质，作为闪存中的隧道栅极绝缘体或NROM器件中的电介质，因为高介电常数（高k）的薄膜提供更薄的二氧化硅膜的功能，并且由于优化了镝掺杂的百分比时介电层的漏电流减小，从而提高记忆功能。

80. 发明授权

US07983516B2 Zinc oxide diodes for optical interconnections 有权
标题翻译：用于光学互连的氧化锌二氧化物
公开(公告)号：US07983516B2
公开(公告)日：2011-07-19
申请号：US12565211
申请日：2009-09-23
申请人： Leonard Forbes , Kie Y. Ahn
发明人： Leonard Forbes , Kie Y. Ahn
IPC分类号： G02B6/12 , H01L21/00 , H01L27/15
CPC分类号： G02B6/43 , B82Y20/00 , G02B6/102 , H01L33/20 , H01L33/28
摘要： The present disclosure includes methods, devices, and systems for zinc oxide diodes for optical interconnections. One system includes a ZnO emitter confined within a circular geometry in an oxide layer on a silicon substrate. An optical waveguide is formed in the oxide layer and has an input coupled to the ZnO emitter. A detector is coupled to an output of the optical waveguide.
摘要翻译：本公开包括用于光学互连的氧化锌二氧化物的方法，装置和系统。一个系统包括限制在硅衬底上的氧化物层中的圆形几何形状内的ZnO发射体。在氧化物层中形成光波导，并具有耦合到ZnO发射体的输入。检测器耦合到光波导的输出。

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