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1. 发明授权

US07989311B2 Strained semiconductor by full wafer bonding 有权
标题翻译：应变半导体通过全晶圆键合
公开(公告)号：US07989311B2
公开(公告)日：2011-08-02
申请号：US12243617
申请日：2008-10-01
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L21/425 , H01L21/76
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
摘要翻译：本公开的一个方面涉及一种用应变半导体形成晶片的方法。在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变层。本文提供了其它方面和实施例。

2. 发明申请

US20090042360A1 STRAINED SEMICONDUCTOR BY FULL WAFER BONDING 有权
标题翻译：应变半导体通过全波束焊接
公开(公告)号：US20090042360A1
公开(公告)日：2009-02-12
申请号：US12243617
申请日：2008-10-01
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
摘要翻译：本公开的一个方面涉及一种用应变半导体形成晶片的方法。在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变层。本文提供了其它方面和实施例。

3. 发明申请

US20110281407A1 STRAINED SEMICONDUCTOR BY FULL WAFER BONDING 失效
标题翻译：应变半导体通过全波束焊接
公开(公告)号：US20110281407A1
公开(公告)日：2011-11-17
申请号：US13192078
申请日：2011-07-27
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L21/8239 , H01L21/336 , H01L21/304
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
摘要翻译：本公开的一个方面涉及一种用应变半导体形成晶片的方法。在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变层。本文提供了其它方面和实施例。

4. 发明授权

US07994595B2 Strained semiconductor by full wafer bonding 有权
公开(公告)号：US07994595B2
公开(公告)日：2011-08-09
申请号：US11475798
申请日：2006-06-27
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L29/76 , H01L29/32
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.

5. 发明授权

US08470687B2 Strained semiconductor by full wafer bonding 失效
标题翻译：应变半导体通过全晶圆键合
公开(公告)号：US08470687B2
公开(公告)日：2013-06-25
申请号：US13192078
申请日：2011-07-27
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L21/425 , H01L21/76
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
摘要翻译：本公开的一个方面涉及一种用应变半导体形成晶片的方法。在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变层。本文提供了其它方面和实施例。

6. 发明授权

US07439158B2 Strained semiconductor by full wafer bonding 有权
标题翻译：应变半导体通过全晶圆键合
公开(公告)号：US07439158B2
公开(公告)日：2008-10-21
申请号：US10623788
申请日：2003-07-21
申请人： Leonard Forbes , Joseph E. Geusic , Salman Akram
发明人： Leonard Forbes , Joseph E. Geusic , Salman Akram
IPC分类号： H01L21/425 , H01L21/76
CPC分类号： H01L21/76254
摘要： One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
摘要翻译：本公开的一个方面涉及一种用应变半导体形成晶片的方法。在该方法的各种实施例中，在半导体膜和衬底晶片之一上形成预定轮廓。将半导体膜结合到基板晶片上，并且将预定轮廓拉直以在半导体膜中引起预定应变。在各种实施例中，衬底晶片弯曲到弯曲位置，当衬底晶片处于弯曲位置时，衬底晶片的一部分结合到半导体层，并且衬底晶片被松弛以在半导体中引起预定应变层。本文提供了其它方面和实施例。

7. 发明授权

US07547954B2 Electronic systems using optical waveguide interconnects formed through a semiconductor wafer 有权
标题翻译：使用通过半导体晶片形成的光波导互连的电子系统
公开(公告)号：US07547954B2
公开(公告)日：2009-06-16
申请号：US11653501
申请日：2007-01-16
申请人： Joseph E. Geusic , Kie Y. Ahn , Leonard Forbes
发明人： Joseph E. Geusic , Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L31/0232
CPC分类号： G02B6/032 , G02B6/12002 , G02B6/136 , G02B6/42 , G02B6/43
摘要： An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inner surface of the high aspect ratio holes which may be filled with air or a material with an index of refraction that is greater than 1. These metal confined waveguides are used to transmit signals between functional circuits on the semiconductor wafer and functional circuits on the back of the wafer or beneath the wafer.
摘要翻译：具有形成在高纵横比孔中的多个光波导的集成电路。高纵横比孔延伸穿过半导体晶片。光波导包括高反射材料，其被沉积以便可以填充空气的高纵横比孔的内表面或具有大于1的折射率的材料。这些金属限制波导被使用以在半导体晶片上的功能电路和晶片的背面或晶片之下的功能电路之间传输信号。

8. 发明授权

US07164156B2 Electronic systems using optical waveguide interconnects formed throught a semiconductor wafer 有权
标题翻译：使用通过半导体晶片形成的光波导互连的电子系统
公开(公告)号：US07164156B2
公开(公告)日：2007-01-16
申请号：US11342940
申请日：2006-01-30
申请人： Joseph E. Geusic , Kie Y. Ahn , Leonard Forbes
发明人： Joseph E. Geusic , Kie Y. Ahn , Leonard Forbes
IPC分类号： H01L27/15 , H01L31/12 , H01L31/153 , H01L33/00
CPC分类号： G02B6/032 , G02B6/12002 , G02B6/136 , G02B6/42 , G02B6/43
摘要： An integrated circuit with a number of optical waveguides that are formed in high aspect ratio holes. The high aspect ratio holes extend through a semiconductor wafer. The optical waveguides include a highly reflective material that is deposited so as to line an inner surface of the high aspect ratio holes which may be filled with air or a material with an index of refraction that is greater than 1. These metal confined waveguides are used to transmit signals between functional circuits on the semiconductor wafer and functional circuits on the back of the wafer or beneath the wafer.
摘要翻译：具有形成在高纵横比孔中的多个光波导的集成电路。高纵横比孔延伸穿过半导体晶片。光波导包括高反射材料，其被沉积以便可以填充空气的高纵横比孔的内表面或具有大于1的折射率的材料。这些金属限制波导被使用以在半导体晶片上的功能电路和晶片的背面或晶片之下的功能电路之间传输信号。

9. 发明授权

US07109548B2 Operating a memory device 有权
标题翻译：操作存储设备
公开(公告)号：US07109548B2
公开(公告)日：2006-09-19
申请号：US10789203
申请日：2004-02-27
申请人： Leonard Forbes , Joseph E. Geusic
发明人： Leonard Forbes , Joseph E. Geusic
IPC分类号： H01L29/788
CPC分类号： H01L29/66825 , H01L21/28273 , H01L27/10805 , H01L27/10873
摘要： A floating gate transistor has a reduced barrier energy at an interface with an adjacent gate insulator, allowing faster charge transfer across the gate insulator at lower voltages. Data is stored as charge on the floating gate. The data charge retention time on the floating gate is reduced. The data stored on the floating gate is dynamically refreshed. The floating gate transistor provides a dense and planar dynamic electrically alterable and programmable read only memory (DEAPROM) cell adapted for uses such as for a dynamic random access memory (DRAM) or a dynamically refreshed flash EEPROM memory. The floating gate transistor provides a high gain memory cell and low voltage operation.
摘要翻译：浮栅晶体管在与相邻栅极绝缘体的界面处具有降低的势垒能，允许在较低电压下跨越栅极绝缘体的更快的电荷转移。数据作为电荷存储在浮动栅极上。浮动栅极上的数据电荷保留时间减少。存储在浮动门上的数据被动态刷新。浮栅晶体管提供了适用于诸如用于动态随机存取存储器（DRAM）或动态刷新的快闪EEPROM存储器的密集且平面的动态电可更改和可编程只读存储器（DEAPROM）单元。浮栅晶体管提供高增益存储单元和低电压操作。

10. 发明授权

US07084451B2 Circuits with a trench capacitor having micro-roughened semiconductor surfaces 失效
标题翻译：具有具有微粗糙化半导体表面的沟槽电容器的电路
公开(公告)号：US07084451B2
公开(公告)日：2006-08-01
申请号：US09467992
申请日：1999-12-20
申请人： Leonard Forbes , Joseph E. Geusic , Kie Y. Ahn
发明人： Leonard Forbes , Joseph E. Geusic , Kie Y. Ahn
IPC分类号： H01L27/108
CPC分类号： H01L27/10861 , H01L28/82 , H01L29/66181
摘要： A method for forming a trench capacitor. The method includes forming a trench in a semiconductor substrate. A conformal layer of semiconductor material is deposited in the trench. The surface of the conformal layer of semiconductor material is roughened. An insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench.
摘要翻译：一种形成沟槽电容器的方法。该方法包括在半导体衬底中形成沟槽。半导体材料的保形层沉积在沟槽中。半导体材料的共形层的表面被粗糙化。从粗糙化的半导体材料的保形层向外形成绝缘体层。多晶半导体板从沟槽中的绝缘体层向外形成。

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