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71. 发明授权

US07781846B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07781846B2
公开(公告)日：2010-08-24
申请号：US12348524
申请日：2009-01-05
申请人： Kenichi Osada , Masataka Minami , Shuji Ikeda , Koichiro Ishibashi
发明人： Kenichi Osada , Masataka Minami , Shuji Ikeda , Koichiro Ishibashi
IPC分类号： H01L29/76 , H01L27/11
CPC分类号： H01L27/1104 , G11C11/412 , G11C11/417 , H01L27/11 , H01L29/4916 , H01L29/783 , Y10S257/904
摘要： Prior known static random access memory (SRAM) cells are required that a diffusion layer be bent into a key-like shape in order to make electrical contact with a substrate with a P-type well region formed therein, which would result in a decrease in asymmetry leading to occurrence of a problem as to the difficulty in micro-patterning. To avoid this problem, the P-type well region in which an inverter making up an SRAM cell is formed is subdivided into two portions, which are disposed on the opposite sides of an N-type well region NW1 and are formed so that a diffusion layer forming a transistor has no curvature while causing the layout direction to run in a direction parallel to well boundary lines and bit lines. At intermediate locations of an array, regions for use in supplying power to the substrate are formed in parallel to word lines in such a manner that one regions is provided per group of thirty two memory cell rows or sixty four cell rows.
摘要翻译：现有的已知的静态随机存取存储器（SRAM）单元需要将扩散层弯曲成键状形状，以便与其中形成有P型阱区的衬底进行电接触，这将导致不对称性导致了微图案化困难的问题的发生。为了避免这个问题，构成SRAM单元的逆变器的P型阱区被细分成两部分，它们设置在N型阱区NW1的相对侧上，并形成为扩散形成晶体管的层没有曲率，同时使得布局方向在平行于阱边界线和位线的方向上运行。在阵列的中间位置处，以与字线平行的方式形成用于向基板供电的区域，以每组三十二个存储单元行或六十四个单元行提供一个区域。

72. 发明授权

US07608899B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07608899B2
公开(公告)日：2009-10-27
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅极电介质膜6,7和栅极放电层8,9作为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

73. 发明授权

US07488639B2 Method of manufacturing a semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07488639B2
公开(公告)日：2009-02-10
申请号：US11342695
申请日：2006-01-31
申请人： Akio Nishida , Yasuko Yoshida , Shuji Ikeda
发明人： Akio Nishida , Yasuko Yoshida , Shuji Ikeda
IPC分类号： H01L21/8238
CPC分类号： H01L27/11 , H01L27/1104
摘要： In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.
摘要翻译：为了提供一种半导体集成电路器件，例如能够减少在SRAM的每个存储单元中产生的软错误的高性能半导体集成电路器件，SRAM存储器的交叉连接部分的布线表面其栅电极和漏极分别交叉连接的一对n沟道型MISFET形成为从氧化硅膜的表面突出的形状。在布线上形成用作电容绝缘膜的氮化硅膜和上电极。电容可以由布线，氮化硅膜和上电极形成。

74. 发明申请

US20080099854A1 Semiconductor integrated circuit device and process for manufacturing the same 失效
公开(公告)号：US20080099854A1
公开(公告)日：2008-05-01
申请号：US11834095
申请日：2007-08-06
申请人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
发明人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
IPC分类号： H01L27/11
CPC分类号： H01L27/11 , G11C11/412 , G11C11/4125 , H01L21/76895 , H01L27/0203 , H01L27/0207 , H01L27/1104 , Y10S257/904
摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.

75. 发明申请

US20080090358A1 METHOD OF FABRICATING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US20080090358A1
公开(公告)日：2008-04-17
申请号：US11950152
申请日：2007-12-04
申请人： Shinji NISHIHARA , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
发明人： Shinji NISHIHARA , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
IPC分类号： H01L21/8236
CPC分类号： H01L21/823814 , C23C14/16 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/31608 , H01L21/76229 , H01L21/76828 , H01L21/823835 , H01L21/823842 , H01L21/823871 , H01L23/53223 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.
摘要翻译：在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

76. 发明授权

US07358578B2 Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring 有权
标题翻译：具有（111）取向的衬底上的场效应晶体管具有氧化锆栅极绝缘体和钴或镍硅化物布线
公开(公告)号：US07358578B2
公开(公告)日：2008-04-15
申请号：US10155833
申请日：2002-05-22
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅介质膜6,7的主要成分。栅介质膜6,7例如通过CVD形成。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气扩散被控制。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

77. 发明申请

US20080073726A1 Semiconductor integrated circuit device and process for manufacturing the same 失效
公开(公告)号：US20080073726A1
公开(公告)日：2008-03-27
申请号：US11826491
申请日：2007-07-16
申请人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
发明人： Shuji Ikeda , Toshiaki Yamanaka , Kenichi Kikushima , Shinichiro Mitani , Kazushige Sato , Akira Fukami , Masaya Iida , Akihiro Shimizu
IPC分类号： H01L27/088
CPC分类号： H01L27/11 , G11C11/412 , G11C11/4125 , H01L21/76895 , H01L27/0203 , H01L27/0207 , H01L27/1104 , Y10S257/904
摘要： A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer constituting the individual gate electrodes of the drive MISFETs, the transfer MISFETs and the load MISFETs of the memory cell and in which a reference voltage line formed over the local wiring lines is arranged to be superposed over the local wiring lines to form a capacity element. Moreover, the capacity element is formed between the local wiring lines and the first conducting layer by superposing the local wiring lines over the first conducting layer. Moreover, the local wiring lines are formed by using resistance lowering means such as silicification. In addition, there are made common the means for lowering the resistance of the gate electrode of the transfer MISFETs and the means for forming the local wiring lines.

78. 发明申请

US20080061381A1 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING CAPACITOR ELEMENT 失效
标题翻译：制造具有电容元件的半导体集成电路器件的制造方法
公开(公告)号：US20080061381A1
公开(公告)日：2008-03-13
申请号：US11926321
申请日：2007-10-29
申请人： Naotaka Hashimoto , Yutaka Hoshino , Shuji Ikeda
发明人： Naotaka Hashimoto , Yutaka Hoshino , Shuji Ikeda
IPC分类号： H01L27/108 , H01L21/8244
CPC分类号： H01L27/11 , G11C11/4125 , H01L23/5222 , H01L27/0207 , H01L27/1104 , H01L27/1112 , H01L2924/0002 , Y10S257/903 , H01L2924/00
摘要： In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower electrode and the upper electrode. One electrode (the lower electrode) of the capacitor element is connected to one storage node of a flip-flop circuit, and the other electrode (the upper electrode) is connected to the other storage node. As a result, the storage node capacitance of the memory cell of the SRAM is increased to improve the soft error resistance.
摘要翻译：在具有由衬底上形成的六个MISFET构成的存储单元的完整CMOS SRAM中，具有堆叠结构的电容器元件由覆盖存储单元的下电极，上电极和插入了电容器绝缘膜（电介质膜）的电极形成在下电极和上电极之间。电容器元件的一个电极（下电极）连接到触发器电路的一个存储节点，另一个电极（上电极）连接到另一个存储节点。结果，SRAM的存储单元的存储节点电容增加，以提高软错误电阻。

79. 发明授权

US07314830B2 Method of fabricating semiconductor integrated circuit device with 99.99 wt% cobalt 有权
标题翻译：制造具有99.99重量％钴的半导体集成电路器件的方法
公开(公告)号：US07314830B2
公开(公告)日：2008-01-01
申请号：US11783187
申请日：2007-04-06
申请人： Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
发明人： Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
IPC分类号： H01L21/44
CPC分类号： H01L21/823814 , C23C14/16 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/31608 , H01L21/76229 , H01L21/76828 , H01L21/823835 , H01L21/823842 , H01L21/823871 , H01L23/53223 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.
摘要翻译：在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

80. 发明授权

US07214577B2 Method of fabricating semiconductor integrated circuit device 有权
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US07214577B2
公开(公告)日：2007-05-08
申请号：US11006702
申请日：2004-12-08
申请人： Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
发明人： Shinji Nishihara , Shuji Ikeda , Naotaka Hashimoto , Hiroshi Momiji , Hiromi Abe , Shinichi Fukada , Masayuki Suzuki
IPC分类号： H01L21/8238 , H01L21/4763 , H01L21/00 , H01L21/84 , H01L21/44
CPC分类号： H01L21/823814 , C23C14/16 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/31608 , H01L21/76229 , H01L21/76828 , H01L21/823835 , H01L21/823842 , H01L21/823871 , H01L23/53223 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETs by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.
摘要翻译：通过使用高纯度Co靶通过溅射将沉积在晶片的主平面上的Co膜进行硅化，在MOSFET的栅极，源极和漏极的表面上形成具有低电阻和小的结漏电流的Co硅化物层 Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

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