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1. 发明申请

US20080061384A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080061384A1
公开(公告)日：2008-03-13
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/78
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

2. 发明授权

US07608899B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07608899B2
公开(公告)日：2009-10-27
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅极电介质膜6,7和栅极放电层8,9作为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

3. 发明授权

US07358578B2 Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring 有权
标题翻译：具有（111）取向的衬底上的场效应晶体管具有氧化锆栅极绝缘体和钴或镍硅化物布线
公开(公告)号：US07358578B2
公开(公告)日：2008-04-15
申请号：US10155833
申请日：2002-05-22
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅介质膜6,7的主要成分。栅介质膜6,7例如通过CVD形成。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气扩散被控制。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

4. 发明申请

US20070096189A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070096189A1
公开(公告)日：2007-05-03
申请号：US11594780
申请日：2006-11-09
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L28/40 , H01L28/60 , H01L29/513
摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
摘要翻译：为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

5. 发明授权

US06489648B2 Semiconductor device 有权
公开(公告)号：US06489648B2
公开(公告)日：2002-12-03
申请号：US09944485
申请日：2001-08-30
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L27108
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L27/10873 , H01L28/56 , H01L28/57 , H01L29/4975 , H01L29/513
摘要： A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

6. 发明授权

US07217971B2 Miniaturized semiconductor device with improved dielectric properties 有权
标题翻译：具有改善介电特性的小型半导体器件
公开(公告)号：US07217971B2
公开(公告)日：2007-05-15
申请号：US10848473
申请日：2004-05-17
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L31/119
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2–5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2–5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,9，以便成为MOS晶体管。氧化锆或氧化铪被用作栅介质膜6,7的主要成分。栅介质膜6,7例如通过CVD形成。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气扩散被控制。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

7. 发明授权

US07135732B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07135732B2
公开(公告)日：2006-11-14
申请号：US10479703
申请日：2002-06-04
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L27/108
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L28/40 , H01L28/60 , H01L29/513
摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
摘要翻译：为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

8. 发明授权

US06940118B2 Semiconductor device with high permittivity gate dielectric film 有权
标题翻译：具有高介电常数栅极介电膜的半导体器件
公开(公告)号：US06940118B2
公开(公告)日：2005-09-06
申请号：US10299197
申请日：2002-11-18
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L21/02 , H01L21/28 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/105 , H01L27/108 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/51 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L27/10873 , H01L28/56 , H01L28/57 , H01L29/4975 , H01L29/513
摘要： A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.
摘要翻译：半导体器件具有由氧化锆或氧化铪形成的栅极电介质膜和与硅衬底的一个主表面侧的栅极电介质膜接触的栅电极膜。栅极电介质膜含有防止氧扩散的添加元素。

9. 发明授权

US06927435B2 Semiconductor device and its production process 失效
标题翻译：半导体器件及其生产工艺
公开(公告)号：US06927435B2
公开(公告)日：2005-08-09
申请号：US10043099
申请日：2002-01-14
申请人： Hiroshi Moriya , Tomio Iwasaki , Hideo Miura , Shuji Ikeda
发明人： Hiroshi Moriya , Tomio Iwasaki , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/78 , H01L21/8234 , H01L29/76 , H01L21/336 , H01L27/108
CPC分类号： H01L21/823462 , H01L21/823456
摘要： A semiconductor device comprising a semiconductor substrate, gate insulators formed on the substrate, and gate electrodes formed on the gate insulators, the gate insulators which are mainly composed of a material selected from titanium oxide, zirconium oxide and hafnium oxide, and in which compressive strain is produced and equipped with MOS transistors, can suppress leakage current flowing through the gate insulators and has high reliability.
摘要翻译：一种半导体器件，包括半导体衬底，形成在衬底上的栅极绝缘体和形成在栅极绝缘体上的栅极电极，主要由选自氧化钛，氧化锆和氧化铪的材料组成的栅极绝缘体，并且其中压缩应变制造并配备有MOS晶体管，可以抑制流过栅极绝缘体的漏电流并具有高可靠性。

10. 发明授权

US06943076B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06943076B2
公开(公告)日：2005-09-13
申请号：US09943843
申请日：2001-08-30
申请人： Tomio Iwasaki , Hideo Miura , Hiroyuki Ohta , Hiroshi Moriya
发明人： Tomio Iwasaki , Hideo Miura , Hiroyuki Ohta , Hiroshi Moriya
IPC分类号： H01L29/43 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/336
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L27/10873 , H01L27/10882 , H01L29/4966 , H01L29/513
摘要： Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.
摘要翻译：在半导体衬底的一个主表面上形成各自含有氧化钛作为主要构成材料的栅极绝缘膜。形成与栅极绝缘膜接触的栅极电极膜。栅极电极膜含有氧化钌或氧化铱作为主要构成材料。为了防止导电元件扩散到栅极绝缘膜的氧化钛中，氧化钌或氧化铱被有效地用作栅电极的主要构成材料。可以实现半导体器件，其中通过在保持期望的介电特性的同时增加物理膜厚度来抑制泄漏电流的发生。

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