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71. 发明授权

US4887037A Electron spin resonance spectrometer 失效
标题翻译：电子自旋共振光谱仪
公开(公告)号：US4887037A
公开(公告)日：1989-12-12
申请号：US153092
申请日：1988-02-08
申请人： Yusuke Yajima , Kanji Tsujii
发明人： Yusuke Yajima , Kanji Tsujii
IPC分类号： G01R33/345 , G01R33/60
CPC分类号： G01R33/60
摘要： An electron spin resonance spectrometer is disclosed, in which a sample made of a semiconductor material or the like is illuminated with light while being applied with a magnetic field and a microwave, to detect the electron spin resonance due to a defect in a light-illuminated portion of the sample, on the basis of a photo-induced voltage appearing across the sample or a reduction in microwave intensity caused by the microwave absorption of the sample.
摘要翻译：公开了一种电子自旋共振光谱仪，其中由半导体材料等制成的样品在施加磁场和微波的同时用光照射，以检测由于光照射中的缺陷引起的电子自旋共振基于样品上出现的光诱导电压或由样品的微波吸收引起的微波强度的降低。

72. 发明授权

US4653908A Grazing incidence reflection spectrometer 失效
标题翻译：掠射入射反射光谱仪
公开(公告)号：US4653908A
公开(公告)日：1987-03-31
申请号：US677245
申请日：1984-12-03
申请人： Yusuke Yajima , Seiichi Murayama , Kanji Tsujii
发明人： Yusuke Yajima , Seiichi Murayama , Kanji Tsujii
IPC分类号： G01N21/27 , G01J3/42 , G01N21/00 , G01N21/21 , G01N21/33 , G01J3/32
CPC分类号： G01N21/55 , G01J3/42 , G01N21/21
摘要： The present invention consists in a grazing incidence reflection spectrometer wherein light is caused to incide on a surface of a sample, and an intensity of light reflected from the sample surface is detected, thereby to measure an electronic absorption spectrum of a material adsorbed to the sample surface, characterized in that the incident light is visible light or ultraviolet light, and that the incident light has a predetermined glancing angle to the sample surface.
摘要翻译：本发明包括一种放射入射反射光谱仪，其中使光入射到样品的表面上，并且检测从样品表面反射的光的强度，从而测量吸附在样品上的材料的电子吸收光谱其特征在于入射光是可见光或紫外光，并且入射光对样品表面具有预定的扫视角。

73. 发明授权

US07417444B2 Method and apparatus for inspecting integrated circuit pattern 失效
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US07417444B2
公开(公告)日：2008-08-26
申请号：US11269617
申请日：2005-11-09
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31/305 , H01J37/28
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

74. 发明授权

US07242015B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US07242015B2
公开(公告)日：2007-07-10
申请号：US11234197
申请日：2005-09-26
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37/153 , H01J37/30
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

75. 发明授权

US07184661B1 Transmission equipment for network and network transmission system 失效
标题翻译：网络传输系统传输设备
公开(公告)号：US07184661B1
公开(公告)日：2007-02-27
申请号：US09589526
申请日：2000-06-07
申请人： Keiji Usuba , Yoshimi Nakagawa , Satoko Araki , Yusuke Yajima
发明人： Keiji Usuba , Yoshimi Nakagawa , Satoko Araki , Yusuke Yajima
IPC分类号： H04J14/00 , H04B10/00
CPC分类号： H04J3/14 , H04B10/03 , H04B10/0773 , H04B2210/072 , H04J3/0688 , H04J2203/0042 , H04L12/437 , H04L69/40
摘要： According to the invention, in a transmission apparatus, there are provided an equipment supervision unit detecting an obstacle in the equipment and a switching control unit controlling the switching operation of transmission lines. When the equipment supervision unit detects condition in which obstacles have occurred in more than one groups of the cross connect unit or the clock unit in which paths provided are disconnected, the same K-bytes as in the case when SF failure is detected are outputted to all the fibers to be inputted to the equipment. Alternatively, an FS-R command is executed to both sides, or Line-AIS is inserted in all the outputted transmission lines, or an output is disconnected, so that the equipment is isolated and the paths provided through a node is relieved.
摘要翻译：根据本发明，在发送装置中，设置有检测设备中的障碍物的设备监视单元和控制传输线路的切换操作的切换控制单元。当设备监督单元检测到交叉连接单元或提供的路径的时钟单元断开的多个组中发生障碍物的情况时，与检测到SF故障的情况相同的K字节被输出到所有要输入到设备的纤维。或者，对两侧执行FS-R指令，或者在所有输出的传输线路中插入Line-AIS，或者输出断开，从而使设备隔离，通过节点提供的路径被释放。

76. 发明授权

US07026830B2 Method and apparatus for inspecting integrated circuit pattern 失效
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US07026830B2
公开(公告)日：2006-04-11
申请号：US10379555
申请日：2003-03-06
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31/305 , G01R31/28
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： To make possible the in-line inspection of a pattern of an insulating material.A patterned wafer 40 formed with a pattern by a resist film is placed on a specimen table 21 of a patterned wafer inspection apparatus 1 in opposed relation to a SEM 3. An electron beam 10 of a large current is emitted from an electron gun 11 and the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detector 16 thereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unit 32 and a defect determining unit 33. Since an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.
摘要翻译：使绝缘材料的图案能够在线检查。通过抗蚀剂膜形成图案的图案化晶片40与SEM 3相对地放置在图案化晶片检查装置1的样本台21上。从电子枪11发射大电流的电子束10，以高扫描速度扫描图案化晶片的图案一次。通过二次电子检测器16检测来自图案化晶片的该扫描产生的二次电子，从而获得电子束图像。使用该电子束图像，通过算术运算单元32和缺陷判定单元33对图案化晶片进行比较检查。由于可以通过仅扫描电子束一次来获得高对比度的电子束图像，因此图案化晶片使用SEM的检查方法可以在IC制造方法中实现。

77. 发明申请

US20060043982A1 Method and apparatus for inspecting integrated circuit pattern 失效
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US20060043982A1
公开(公告)日：2006-03-02
申请号：US11269617
申请日：2005-11-09
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31/305
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

78. 发明授权

US06559663B2 Method and apparatus for inspecting integrated circuit pattern 有权
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US06559663B2
公开(公告)日：2003-05-06
申请号：US09983703
申请日：2001-10-25
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31305
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with: the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射，在扫描电子束的同时，在从照射电子束的时刻起经过规定时间后，照射电子束的部位检测到二次带电粒子，根据这样检测出形成图像通过使用如此形成的图像来检查次级带电粒子信号和待检查的部分。

79. 发明授权

US06329826B1 Method and apparatus for inspecting integrated circuit pattern 有权
标题翻译：检查集成电路图案的方法和装置
公开(公告)号：US06329826B1
公开(公告)日：2001-12-11
申请号：US09525341
申请日：2000-03-14
申请人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Mari Nozoe , Haruo Yoda , Kimiaki Ando , Katsuhiro Kuroda , Yutaka Kaneko , Maki Tanaka , Shunji Maeda , Hitoshi Kubota , Aritoshi Sugimoto , Katsuya Sugiyama , Atsuko Takafuji , Yusuke Yajima , Hiroshi Tooyama , Tadao Ino , Takashi Hiroi , Kazushi Yoshimura , Yasutsugu Usami
IPC分类号： G01R31305
CPC分类号： G01R31/305 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要翻译：一种电路图案检查方法及其装置，其中待检查样品的待检查部分的整个部分被制成处于预定的充电状态，被检查的部分用图像形成高分辨率照射，在扫描电子束时，在从电子束照射的时刻起经过规定的时间后，在照射电子束的部分检测到二次带电粒子，根据这样检测的次级通过使用如此形成的图像来检查带电粒子信号，并检查待检查的部分。

80. 发明授权

US5936244A Electron microscope and electron microscopy method 失效
标题翻译：电子显微镜和电子显微镜法
公开(公告)号：US5936244A
公开(公告)日：1999-08-10
申请号：US973898
申请日：1997-12-18
申请人： Yusuke Yajima , Yoshio Takahashi , Hiroshi Suzuki , Katsuhiro Kuroda
发明人： Yusuke Yajima , Yoshio Takahashi , Hiroshi Suzuki , Katsuhiro Kuroda
IPC分类号： H01J37/26 , H01J37/244
CPC分类号： H01J37/228 , H01J37/268 , H01J2237/2445 , H01J2237/2455
摘要： An electron microscope for observing a magnetization state of a specimen with high resolution and an electron microscopic method. The electron microscope comprises an electron beam irradiating device including a scanning coil 3 and an objective lens 4 to irradiate an electron beam 2 emitted from an electron source 1 on a desired part of a specimen 51, and a circularly polarized light detector including a quarter wave plate 8, a polarizer 9 and a photodetector 11 to detect circularly polarized light generated from the electron beam irradiated part of the specimen 51. Since the intensity of the circularly polarized light generated from the specimen irradiated with the electron beam depends on the direction of magnetization in the electron beam irradiated part and the detecting direction, the distribution of magnetization can be measured by observing a scanning image in the form of a luminance signal indicative of the intensity of the circularly polarized light while scanning the electron beam irradiated part on the surface of the specimen.
摘要翻译： PCT No.PCT / JP95 / 01273 Sec。 371 1997年12月18日第 102（e）日期1997年12月18日PCT提交1995年6月26日PCT公布。出版物WO97 / 01862 日期1997年1月16日用电子显微镜观察高分辨率的试样的磁化状态的电子显微镜。电子显微镜包括电子束照射装置，其包括扫描线圈3和物镜4，以将从电子源1发射的电子束2照射在样本51的期望部分上，以及包括四分之一波的圆偏振光检测器板8，偏振器9和光电检测器11，用于检测从样本51的电子束照射部分产生的圆偏振光。由于用电子束照射的样本产生的圆偏振光的强度取决于磁化方向在电子束照射部分和检测方向上，可以通过观察表示圆偏振光的强度的亮度信号的形式的扫描图像，同时扫描表面上的电子束照射部分来测量磁化分布标本。

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