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71. 发明授权

US6046467A Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US6046467A
公开(公告)日：2000-04-04
申请号：US667196
申请日：1996-06-20
申请人： Koji Arita , Akihiro Matsuda , Yoshihisa Nagano , Toru Nasu , Eiji Fujii
发明人： Koji Arita , Akihiro Matsuda , Yoshihisa Nagano , Toru Nasu , Eiji Fujii
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/92 , H01L29/76
CPC分类号： H01L28/40
摘要： A capacitor 25 is formed on an insulating layer 21a formed on a semiconductor substrate 21. The end portion of a capacitor insulating layer 23 is positioned between the end portion of a bottom electrode 22 and the end portion of a top electrode 24. A passivation layer 26 for covering the capacitor 25 is formed. Interconnections 28 are connected to the bottom electrode 22 through a first hole 27a and to the top electrode 24 through a second hole 27b. In this way, since the end portion of the capacitor insulating layer 23 is out of the end portion of the top electrode 24, the end portion of the capacitor insulating layer 23 injured by etching does not affect the capacitance.
摘要翻译：电容器25形成在形成在半导体衬底21上的绝缘层21a上。电容器绝缘层23的端部位于底部电极22的端部和顶部电极24的端部之间。钝化层形成用于覆盖电容器25的26。互连件28通过第一孔27a连接到底部电极22，并通过第二孔27b连接到顶部电极24。以这种方式，由于电容器绝缘层23的端部不在顶部电极24的端部之外，所以通过蚀刻损伤的电容器绝缘层23的端部不影响电容。

72. 发明授权

US6044795A Automatic feeding system having animal carried transmitter which transmits feeding instructions to feeder 失效
标题翻译：自动进料系统，具有将进料指令传送到进料器的动物携带发送器
公开(公告)号：US6044795A
公开(公告)日：2000-04-04
申请号：US107345
申请日：1998-06-30
申请人： Taketoshi Matsuura , Eiji Fujii , Kazuhiro Mori
发明人： Taketoshi Matsuura , Eiji Fujii , Kazuhiro Mori
IPC分类号： A01K5/02 , A01K11/00 , H04B1/034 , A01K1/10 , A01K5/00 , A01K39/00 , H04B1/02
CPC分类号： H04B1/0343 , A01K5/02 , A01K5/0275
摘要： An automatic feeding system includes a tag attached to a body of a pet; and an automatic feeding apparatus for automatically feeding the pet. The tag includes a receiving device for receiving an electromagnetic wave from the automatic feeding apparatus; an information memory device storing information on the feeding of the pet and outputting the information in response to an output from the receiving device; and a sending device for sending the information which is output from the information memory device to the automatic feeding apparatus using an electric wave. The automatic feeding apparatus includes a receiving device for receiving the electric wave from the tag; an information reading device for reading the information on the feeding of the pet in response to an output from the receiving device of the automatic feeding apparatus; a feeding device for supplying feed based on the information; and a sending device for sending an instruction to read the information on the feeding of the pet to the tag using an electric wave.
摘要翻译：一种自动进给系统，包括附着在宠物身上的标签; 以及用于自动进给宠物的自动进给装置。标签包括用于从自动进给装置接收电磁波的接收装置; 信息存储装置，其存储关于宠物的馈送的信息并且响应于来自接收装置的输出而输出信息; 以及发送装置，用于使用电波将从信息存储装置输出的信息发送到自动馈送装置。自动进给装置包括用于从标签接收电波的接收装置; 信息读取装置，用于响应于自动进给装置的接收装置的输出读取关于宠物的馈送的信息; 用于基于所述信息供给饲料的饲养装置; 以及发送装置，用于发送用于使用电波读取关于宠物向标签馈送的信息的指令。

73. 发明授权

US5943568A Method of making a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5943568A
公开(公告)日：1999-08-24
申请号：US811664
申请日：1997-03-05
申请人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
发明人： Eiji Fujii , Atsuo Inoue , Koji Arita , Toru Nasu , Akihiro Matsuda
IPC分类号： H01L27/04 , H01L21/02 , H01L21/3105 , H01L21/324 , H01L21/768 , H01L21/822 , H01L27/10 , H01L21/8242
CPC分类号： H01L28/40 , H01L21/3105 , H01L21/76828
摘要： A method of making a semiconductor device include forming: (a) a semiconductor substrate on whose surface an integrated circuit is formed, (b) a first insulating layer on the semiconductor device and having first contact holes which lead to the integrated circuit, (c) a capacitance element on the first insulating layer, (d) a second insulating layer on the first insulating layer to cover the capacitance element, and having second contact holes which lead to an upper and a lower electrodes of the capacitance element respectively, and (e) interconnections which are connected to the integrated circuit and the capacitance element respectively through the first and second contact holes. The hydrogen density of this semiconductor device is 10.sup.11 atoms/cm.sup.2 or less.
摘要翻译：制造半导体器件的方法包括形成：（a）其表面上形成有集成电路的半导体衬底，（b）半导体器件上的第一绝缘层，并且具有通向集成电路的第一接触孔，（c ）所述第一绝缘层上的电容元件，（d）所述第一绝缘层上的第二绝缘层以覆盖所述电容元件，并且具有分别通向所述电容元件的上下电极的第二接触孔，和 e）分别通过第一和第二接触孔连接到集成电路和电容元件的互连。该半导体器件的氢密度为1011原子/ cm 2以下。

74. 发明授权

US5795794A Method for forming a semiconductor device having a capacitor 失效
标题翻译：用于形成具有电容器的半导体器件的方法
公开(公告)号：US5795794A
公开(公告)日：1998-08-18
申请号：US678291
申请日：1996-07-11
申请人： Yoshihisa Nagano , Eiji Fujii , Toru Nasu , Akihiro Matsuda
发明人： Yoshihisa Nagano , Eiji Fujii , Toru Nasu , Akihiro Matsuda
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L21/70 , H01L27/00
CPC分类号： H01L28/55
摘要： The present invention relates to method of manufacturing semiconductor devices having built-in capacitor comprising a dielectric substance of high dielectric constant or a ferroelectric substance as the capacitance insulation film, and aims to solve a problem that the prior art capacitance insulation film contained in semiconductor devices has a rough surface which results in a poor insulating voltage and a large spread in electrical characteristics, as well as broken connection wire; in which method a capacitance insulation film is produced by first forming a first dielectric film, and forming a second dielectric film on the first dielectric film for a thickness greater than the difference in level between top and bottom of the surface of first dielectric film, and forming a thin film whose etching speed is identical with that of the second dielectric film on the second dielectric film making the surface of thin film flat, and then etching the whole of the thin film and part of the second dielectric film off simultaneously to make the surface of second dielectric film flat.
摘要翻译：本发明涉及具有内置电容器的半导体器件的制造方法，该半导体器件包括具有高介电常数的电介质或铁电物质作为电容绝缘膜，并且旨在解决包含在半导体器件中的现有技术的电容绝缘膜的问题具有粗糙的表面，导致绝缘电压差，电特性扩大，连接线断裂; 在该方法中，通过首先形成第一电介质膜来制造电容绝缘膜，并且在第一电介质膜上形成厚度大于第一电介质膜的表面的顶部和底部之间的电平差的厚度的第二电介质膜，以及形成薄膜，其蚀刻速度与第二电介质膜的蚀刻速度相同，使得薄膜表面平坦化，然后同时蚀刻整个薄膜和部分第二电介质膜，使得第二电介质膜的表面平坦。

75. 发明授权

US5717157A Ferroelectric thin film and method of manufacturing the same 失效
标题翻译：铁电薄膜及其制造方法
公开(公告)号：US5717157A
公开(公告)日：1998-02-10
申请号：US351216
申请日：1994-11-30
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Ryoichi Takayama , Masafumi Kobune , Satoshi Fujii
IPC分类号： C04B35/472 , C23C14/08 , C23C14/34 , C30B23/02 , H01L37/02 , H01L41/316 , H01L35/22 , C04B35/491
CPC分类号： H01L41/316 , C04B35/472 , C23C14/08 , C23C14/3414 , C30B23/02 , C30B29/32 , H01L37/025
摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, �(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.
摘要翻译：铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。以这种方式，可以制造含有例如[（1-x）xPb1-yLayTi1-y / 4O3 + xxMgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。

76. 发明授权

US4825256A Image recording device 失效
标题翻译：图像记录装置
公开(公告)号：US4825256A
公开(公告)日：1989-04-25
申请号：US159296
申请日：1988-02-23
申请人： Hitoshi Nakai , Takemi Yamamoto , Jun Sakai , Eiji Fujii
发明人： Hitoshi Nakai , Takemi Yamamoto , Jun Sakai , Eiji Fujii
IPC分类号： G03G21/00 , G03D13/00 , G03F7/00 , G03G15/22 , G03G15/28 , G03B27/32 , G03B27/52
CPC分类号： G03G15/28 , G03F7/0022 , G03G15/228 , G03B2227/325
摘要： An image recording device wherein a photo-sensitive paper or a plain paper is selected as a recording medium. If a monochrom image is to be recorded, a provisional image formed with light-shield materials which corresponds to an original image to be recorded is directly transferred onto the plain paper to form a monochrom image thereon. If a color image is to be recorded, the light-shield image is once transferred onto an image carrier, and the light-shield image carried on the image carrier is exposed on the photo-sensitive paper to form a latent image thereon. The latent image formed on the photo-sensitive paper by the above exposure is then developed to a visible color image.
摘要翻译：一种图像记录装置，其中选择感光纸或普通纸作为记录介质。如果要记录单色图像，则用与要记录的原始图像对应的遮光材料形成的临时图像直接转印到普通纸上以在其上形成单色图像。如果要记录彩色图像，则将遮光图像一次转印到图像载体上，并且承载在图像载体上的遮光图像在感光纸上曝光以在其上形成潜像。然后通过上述曝光在感光纸上形成的潜像显影成可见的彩色图像。

77. 发明授权

US09000655B2 Piezoelectric film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element 有权
标题翻译：压电膜，喷墨头，通过喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件以及使用压电发生元件发电的方法
公开(公告)号：US09000655B2
公开(公告)日：2015-04-07
申请号：US13926794
申请日：2013-06-25
申请人： Yoshiaki Tanaka , Takakiyo Harigai , Hideaki Adachi , Eiji Fujii
发明人： Yoshiaki Tanaka , Takakiyo Harigai , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/18 , H02N2/18 , B41J2/045 , B41J2/055 , C04B35/462 , G01C19/5628 , H01L41/09 , H01L41/113 , H01L41/187 , H01L41/316 , B41J2/14 , C23C14/08 , G01C19/56 , G01C19/5607 , C23C14/34 , C30B23/02 , C30B29/22 , B32B18/00 , C04B35/468 , C04B35/475 , C04B35/50
CPC分类号： H02N2/18 , B32B18/00 , B41J2/045 , B41J2/055 , B41J2/14233 , C04B35/462 , C04B35/468 , C04B35/475 , C04B35/50 , C04B2235/3201 , C04B2235/3215 , C04B2235/3227 , C04B2235/3262 , C04B2235/3272 , C04B2235/3279 , C04B2235/3281 , C04B2235/3298 , C04B2235/787 , C23C14/08 , C23C14/3414 , C30B23/02 , C30B29/22 , G01C19/56 , G01C19/5607 , G01C19/5628 , H01L41/0478 , H01L41/0815 , H01L41/0973 , H01L41/113 , H01L41/1132 , H01L41/1136 , H01L41/1871 , H01L41/1873 , H01L41/1878 , H01L41/316 , H02N2/186 , Y10T428/12667
摘要： The present invention provides a non-lead piezoelectric film having high crystalline orientation, the low dielectric loss, the high polarization-disappear temperature, the high piezoelectric constant, and the high linearity between an applied electric field and an amount of displacement. The present invention is a piezoelectric film comprising: a NaxLa1-x+yNi1-yO3-x layer having only an (001) orientation and a (1-α) (Bi, Na, Ba) TiO3-αBiQO3 layer having only an (001) orientation. The (1-α) (Bi, Na, Ba) TiO3-αBiQO3 layer is formed on the NaxLa1-x+yNi1-yO3-x layer. The character of Q represents Fe, Co, Zn0.5Ti0.5, or Mg0.5Ti0.5 The character of x represents a value of not less than 0.01 and not more than 0.05. The character of y represents a value of not less than 0.05 and not more than 0.20. The character of α represents a value of not less than 0.20 and not more than 0.50.
摘要翻译：本发明提供一种具有高结晶取向，低介电损耗，高偏振消失温度，高压电常数以及施加电场与位移量之间的高线性度的非铅压电薄膜。本发明是一种压电薄膜，它包括仅具有（001）取向的NaxLa1-x + yNi1-yO3-x层和仅具有（001）取向的（001）取向的（001）取向和（1-α）（Bi，Na，Ba）TiO3-αBiQO3层）方向。在NaxLa1-x + yNi1-yO3-x层上形成（1-α）（Bi，Na，Ba）TiO3-αBiQO3层。 Q的特性表示Fe，Co，Zn0.5Ti0.5或Mg0.5Ti0.5 x的特征值不小于0.01且不大于0.05。 y的特征表示不小于0.05且不大于0.20的值。 α的字符表示不小于0.20且不大于0.50的值。

78. 发明授权

US08562113B2 Piezoelectric thin film, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element 有权
标题翻译：压电薄膜，喷墨头，通过喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件以及使用压电发生元件产生电力的方法
公开(公告)号：US08562113B2
公开(公告)日：2013-10-22
申请号：US13280000
申请日：2011-10-24
申请人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
IPC分类号： H01L41/22 , H01L41/00 , H04R17/00 , H02N2/00 , B41J2/045
CPC分类号： B41J2/14032 , C23C14/088 , H01L41/0815 , H01L41/0973 , H01L41/1136 , H01L41/187 , H01L41/316 , H01L41/319
摘要： The present invention provides a piezoelectric thin film comprising an electrode film with a (001) orientation, a (NaxBi0.5)TiO0.5x+2.75—BaTiO3 film with a (001) orientation (x represents not less than 0.29 and not more than 0.4) and a (Na,Bi)TiO3—BaTiO3 piezoelectric layer, the electrode film, the (NaxBi0.5)TiO0.5x+2.75—BaTiO3 film, and the (Na,Bi)TiO3—BaTiO3 piezoelectric layer being laminated in this order.The lead-free piezoelectric thin film of the present invention has low dielectric loss and high piezoelectric performance.
摘要翻译：本发明提供一种压电薄膜，其包括具有（001）取向的电极膜，具有（001）取向的（NaxBi0.5）TiO0.5x + 2.75-BaTiO3膜（x表示不小于0.29且不大于 0.4）和（Na，Bi）TiO 3-BaTiO 3压电层，电极膜，（NaxBi0.5）TiO0.5x + 2.75-BaTiO3膜和（Na，Bi）TiO3-BaTiO3压电层订购。本发明的无铅压电薄膜具有低介电损耗和高压电性能。

79. 发明授权

US08511799B2 Piezoelectric film and method of manufacturing the same, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element 有权
标题翻译：压电膜及其制造方法，喷墨头，通过喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件以及使用该方法产生电力的方法压电发电元件
公开(公告)号：US08511799B2
公开(公告)日：2013-08-20
申请号：US13551058
申请日：2012-07-17
申请人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
IPC分类号： B41J2/045
CPC分类号： H01L41/1871 , B41J2/14233 , C23C14/0021 , C23C14/025 , C23C14/088 , G01C19/5621 , G01C19/5628 , G01P3/44 , H01L41/0477 , H01L41/0973 , H01L41/1136
摘要： It is an object of the present invention to provide a lead-free piezoelectric film including a lead-free ferroelectric material and having low dielectric loss and high piezoelectric performance comparable to that of PZT, and a method of manufacturing the lead-free piezoelectric film.The present invention is directed to a piezoelectric film comprising a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer with a (110) orientation, where 0.30≦x≦0. 46 and 0.51≦y≦0.62.
摘要翻译：本发明的目的是提供一种无铅压电薄膜，其包括无铅铁电材料，并且具有与PZT相当的低介电损耗和高压电性能，以及制造无铅压电薄膜的方法。本发明涉及一种包括具有（110）取向的（NaxBiy）TiO0.5x + 1.5y + 2-BaTiO3层的压电膜，其中0.30≤x≤0.0。 46和0.51 @ y @ 0.62。

80. 发明授权

US08511162B2 Piezoelectric film and method of manufacturing the same, ink jet head, method of forming image by the ink jet head, angular velocity sensor, method of measuring angular velocity by the angular velocity sensor, piezoelectric generating element, and method of generating electric power using the piezoelectric generating element 有权
标题翻译：压电膜及其制造方法，喷墨头，通过喷墨头形成图像的方法，角速度传感器，角速度传感器测量角速度的方法，压电发生元件以及使用该方法产生电力的方法压电发电元件
公开(公告)号：US08511162B2
公开(公告)日：2013-08-20
申请号：US13550994
申请日：2012-07-17
申请人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
发明人： Takakiyo Harigai , Yoshiaki Tanaka , Hideaki Adachi , Eiji Fujii
IPC分类号： B41J2/045 , H01L41/02 , G01P15/09
CPC分类号： G01P15/09 , B41J2/14233 , B41J2002/14258 , G01C19/56 , G01C19/5628 , H01L41/0478 , H01L41/0805 , H01L41/0973 , H01L41/1136 , H01L41/187 , H01L41/1878 , H01L41/316
摘要： The purpose of the present invention is to provide an angular velocity sensor capable of measuring an exact angular velocity, an ink jet head capable of producing an exact amount of ink, and a piezoelectric generating element capable of generating electric power due to positive piezoelectric effect.In the present invention, a piezoelectric film comprising a first electrode, a piezoelectric layer, and a second electrode is used. The first electrode comprises an electrode layer having a (001) orientation. The piezoelectric layer comprises a (NaxBiy)TiO0.5x+1.5y+2—BaTiO3 layer (0.30≦x≦0.46 and 0.51≦y≦0.62) having a (001) orientation.
摘要翻译：本发明的目的是提供一种能够测量精确角速度的角速度传感器，能够产生精确量的墨水的喷墨头，以及能够由于正的压电效应产生电力的压电发生元件。在本发明中，使用包括第一电极，压电层和第二电极的压电膜。第一电极包括具有（001）取向的电极层。压电层包括具有（001）取向的（NaxBiy）TiO0.5x + 1.5y + 2-BaTiO3层（0.30 @ x @ 0.46和0.51 @ y @ 0.62）。

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