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71. 发明申请

US20120193456A1 GAS DISTRIBUTION PLATE WITH DISCRETE PROTECTIVE ELEMENTS 有权
标题翻译：具有分离保护元件的气体分布板
公开(公告)号：US20120193456A1
公开(公告)日：2012-08-02
申请号：US13363342
申请日：2012-01-31
申请人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
发明人： Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
IPC分类号： B05B1/14
CPC分类号： C23C16/5096 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/32091 , H01J37/3244 , H01J37/32559
摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.
摘要翻译：本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

72. 发明授权

US07473339B2 Slim cell platform plumbing 失效
标题翻译：细胞细胞平台管道
公开(公告)号：US07473339B2
公开(公告)日：2009-01-06
申请号：US10826489
申请日：2004-04-16
申请人： Allen L. D'Ambra , Arulkumar Shanmugasundram , Michael X. Yang , Yevgeniy (Eugene) Rabinovich , Dmitry Lubomirsky
发明人： Allen L. D'Ambra , Arulkumar Shanmugasundram , Michael X. Yang , Yevgeniy (Eugene) Rabinovich , Dmitry Lubomirsky
IPC分类号： C25D17/00 , C25D21/14 , C25D7/12
CPC分类号： C25D17/00
摘要： Embodiments of the invention generally provide a fluid delivery system for an electrochemical plating platform. The fluid delivery system is configured to supply multiple chemistries to multiple plating cells with minimal bubble formation in the fluid delivery system. The system includes a solution mixing system, a fluid distribution manifold in communication with the solution mixing system, a plurality of fluid conduits in fluid communication with the fluid distribution manifold, and a plurality of fluid tanks, each of the plurality of fluid tanks being in fluid communication with at least one of the plurality of fluid conduits.
摘要翻译：本发明的实施方案通常提供用于电化学电镀平台的流体输送系统。流体输送系统被配置为在流体输送系统中以最小的气泡形成向多个电镀单元提供多个化学物质。该系统包括溶液混合系统，与溶液混合系统连通的流体分配歧管，与流体分配歧管流体连通的多个流体导管和多个流体箱，多个流体箱中的每一个处于与多个流体导管中的至少一个流体连通。

73. 发明授权

US07465358B2 Measurement techniques for controlling aspects of a electroless deposition process 有权
标题翻译：用于控制无电沉积工艺方面的测量技术
公开(公告)号：US07465358B2
公开(公告)日：2008-12-16
申请号：US10794592
申请日：2004-03-05
申请人： Timothy W. Weidman , Dmitry Lubomirsky
发明人： Timothy W. Weidman , Dmitry Lubomirsky
IPC分类号： B05C11/00
CPC分类号： H01L21/76838 , C23C18/1601 , C23C18/1619 , C23C18/1628 , C23C18/1678 , C23C18/1682 , C23C18/1872 , C23C18/28 , H01L21/288 , Y10S134/902
摘要： Embodiments of the invention generally provide a fluid processing chamber, sensors and a controller and method for using the same. The fluid processing chamber includes an inlet region, a processing region and an outlet region. The inlet region generally contains one or more sensors and an external controller to monitor the characteristics of the processing fluid at the inlet to the processing region. The outlet region generally contains one or more sensors and an external controller to monitor the characteristics of the processing fluid leaving the processing region of the chamber. In one embodiment the processing region contains one or more sensors and an external controller to monitor the characteristics of the processing fluid in the processing region. The sensors may include, for example, an ORP probe, a temperature sensor, a conductivity sensor, a dissolved hydrogen sensor, a dissolved oxygen sensor, and a pH sensor. The fluid processing chamber is generally useful for all process steps done to deposit an electroless deposited film on a substrate including, for example, all pre-clean process steps (substrate preparation steps), all electroless activation process steps, all electroless deposition steps, and all post electroless deposition cleaning steps.
摘要翻译：本发明的实施例通常提供流体处理室，传感器以及使用该流体处理室的控制器和方法。流体处理室包括入口区域，处理区域和出口区域。入口区域通常包含一个或多个传感器和外部控制器，以监控处理区域入口处的处理流体的特性。出口区域通常包含一个或多个传感器和外部控制器，以监测离开室的处理区域的处理流体的特性。在一个实施例中，处理区域包含一个或多个传感器和外部控制器，用于监视处理区域中处理流体的特性。传感器可以包括例如ORP探针，温度传感器，电导率传感器，溶解氢传感器，溶解氧传感器和pH传感器。流体处理室通常可用于在基底上沉积无电沉积膜的所有工艺步骤，包括例如所有预清洁工艺步骤（衬底制备步骤），所有无电解激活工艺步骤，所有无电沉积步骤和所有后期无电沉积清洗步骤。

74. 发明授权

US07285195B2 Electric field reducing thrust plate 失效
标题翻译：电场减压推力板
公开(公告)号：US07285195B2
公开(公告)日：2007-10-23
申请号：US10877137
申请日：2004-06-24
申请人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily L. Pang
发明人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily L. Pang
IPC分类号： C25D17/00 , C25D5/00 , C25D17/10
CPC分类号： C25D7/12 , C25D17/06 , H01L21/2885
摘要： A method and apparatus for an electrochemical processing cell that is configured to minimize bevel and backside deposition. The apparatus includes a contact ring assembly for supporting a substrate, a thrust plate movably positioned to engage a substrate positioned on the contact pins, and a lip seal member positioned to contact the thrust plate and the contact ring to prevent fluid flow therebetween. The lip seal includes at least one bubble release channel formed therethrough. The method includes positioning an electric field barrier between a backside substrate engaging member and a frontside substrate supporting member to prevent electric field from traveling to the bevel and backside of the substrate. The electric field barrier including at least one bubble release channel formed therethrough.
摘要翻译：一种用于电化学处理电池的方法和装置，其被配置为最小化斜面和背面沉积。该装置包括用于支撑基板的接触环组件，可移动地定位成接合位于接触销上的基板的止动板，以及定位成接触推力板和接触环以防止其间流体流动的唇形密封构件。唇形密封件包括至少一个通过其形成的气泡释放通道。该方法包括在背面基板接合构件和前侧基板支撑构件之间定位电场屏障，以防止电场行进到基板的斜面和背面。电场屏障包括至少一个通过其形成的气泡释放通道。

75. 发明授权

US07223323B2 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25B9/12 , C35D3/38 , B08B3/02
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

76. 发明授权

US07205233B2 Method for forming CoWRe alloys by electroless deposition 失效
标题翻译：通过无电沉积形成CoWRe合金的方法
公开(公告)号：US07205233B2
公开(公告)日：2007-04-17
申请号：US10703769
申请日：2003-11-07
申请人： Sergey Lopatin , Arulkumar Shanmugasundram , Dmitry Lubomirsky , Ian A. Pancham
发明人： Sergey Lopatin , Arulkumar Shanmugasundram , Dmitry Lubomirsky , Ian A. Pancham
IPC分类号： H01L21/28
CPC分类号： H01L21/76846 , C23C18/1651 , C23C18/1692 , C23C18/1844 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76858 , H01L21/76874
摘要： A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), and at least one of phosphorus (P) and boron (B). In an embodiment of the invention, forming the capping layer comprises exposing the conductive surface to an electroless capping solution comprising a cobalt source, a tungsten source, a rhenium source, and at least one of a phosphorus source and a boron source, and annealing the capping layer.
摘要翻译：一种用于制造具有对铜和氧扩散的阻挡性能增强的覆盖层的方法，包括在互连的导电表面上形成覆盖层，其中所述覆盖层包括钴（Co），钨（W），铼（Re），和磷（P）和硼（B）中的至少一种。在本发明的一个实施方案中，形成覆盖层包括将导电表面暴露于包含钴源，钨源，铼源和磷源和硼源中的至少一个的无电覆盖溶液中，并将盖层

77. 发明授权

US07189313B2 Substrate support with fluid retention band 失效
标题翻译：基体支架带流体保持带
公开(公告)号：US07189313B2
公开(公告)日：2007-03-13
申请号：US10143212
申请日：2002-05-09
申请人： Dmitry Lubomirsky
发明人： Dmitry Lubomirsky
IPC分类号： C25D17/06
CPC分类号： C25D7/12 , C25D17/001 , C25D17/06
摘要： An apparatus and method for supporting a substrate is provided. In one embodiment, an apparatus for supporting a substrate includes a body having a band extending therefrom. The band is adapted to retain a fluid on the body thereby forming a shallow processing bath for processing the substrate. The band is adapted to deflect under centrifugal force to release the fluid from the substrate as the body is rotated above a predetermined rate.
摘要翻译：提供一种用于支撑衬底的装置和方法。在一个实施例中，用于支撑衬底的装置包括具有从其延伸的带的主体。该带适于将流体保持在主体上，从而形成用于处理基板的浅加工槽。该带适合于在离心力作用下偏转，以便当主体旋转超过预定速率时，将流体从衬底释放。

78. 发明授权

US07138014B2 Electroless deposition apparatus 有权
公开(公告)号：US07138014B2
公开(公告)日：2006-11-21
申请号：US10059572
申请日：2002-01-28
申请人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
发明人： Joseph J. Stevens , Dmitry Lubomirsky , Ian Pancham , Donald J. K. Olgado , Howard E. Grunes , Yeuk-Fai Edwin Mok
IPC分类号： C23C14/00 , B05C11/00 , B05C3/00
CPC分类号： H01L21/67126 , C23C18/1607 , C23C18/1619 , C23C18/1628 , C23C18/165 , C23C18/1653 , C23C18/1678 , C25D7/123 , C25D17/001
摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

79. 发明申请

US20060237307A1 Electrochemical processing cell 审中-公开
标题翻译：电化学处理池
公开(公告)号：US20060237307A1
公开(公告)日：2006-10-26
申请号：US11473295
申请日：2006-06-22
申请人： Michael Yang , Dmitry Lubomirsky , Yezdi Dord , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
发明人： Michael Yang , Dmitry Lubomirsky , Yezdi Dord , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
IPC分类号： C25B11/00
CPC分类号： H01L21/2885 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , C07F9/103 , C25D7/123 , C25D17/001
摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
摘要翻译：本发明的实施方案通常可以提供小体积的电化学电镀单元。电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽多个槽中的每一个终止于环形排水通道。提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，膜支撑组件具有形成在其中的多个通道和孔。

80. 发明申请

US20050263066A1 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US20050263066A1
公开(公告)日：2005-12-01
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian Pancham , Ramakrishna Cheboli , Timothy Weidman
IPC分类号： B05D3/10 , C23C18/16 , C23F1/00 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

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