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1. 发明授权

US07285195B2 Electric field reducing thrust plate 失效
标题翻译：电场减压推力板
公开(公告)号：US07285195B2
公开(公告)日：2007-10-23
申请号：US10877137
申请日：2004-06-24
申请人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily L. Pang
发明人： Harald Herchen , Dmitry Lubomirsky , Bo Zheng , Lily L. Pang
IPC分类号： C25D17/00 , C25D5/00 , C25D17/10
CPC分类号： C25D7/12 , C25D17/06 , H01L21/2885
摘要： A method and apparatus for an electrochemical processing cell that is configured to minimize bevel and backside deposition. The apparatus includes a contact ring assembly for supporting a substrate, a thrust plate movably positioned to engage a substrate positioned on the contact pins, and a lip seal member positioned to contact the thrust plate and the contact ring to prevent fluid flow therebetween. The lip seal includes at least one bubble release channel formed therethrough. The method includes positioning an electric field barrier between a backside substrate engaging member and a frontside substrate supporting member to prevent electric field from traveling to the bevel and backside of the substrate. The electric field barrier including at least one bubble release channel formed therethrough.
摘要翻译：一种用于电化学处理电池的方法和装置，其被配置为最小化斜面和背面沉积。该装置包括用于支撑基板的接触环组件，可移动地定位成接合位于接触销上的基板的止动板，以及定位成接触推力板和接触环以防止其间流体流动的唇形密封构件。唇形密封件包括至少一个通过其形成的气泡释放通道。该方法包括在背面基板接合构件和前侧基板支撑构件之间定位电场屏障，以防止电场行进到基板的斜面和背面。电场屏障包括至少一个通过其形成的气泡释放通道。

2. 发明授权

US07223323B2 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25B9/12 , C35D3/38 , B08B3/02
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

3. 发明授权

US08317970B2 Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma 有权
标题翻译：具有处理气体分散器的天花板电极，其容纳延伸到等离子体中的多个感应RF功率施加器
公开(公告)号：US08317970B2
公开(公告)日：2012-11-27
申请号：US12132133
申请日：2008-06-03
申请人： Canfeng Lai , Lily L. Pang , Majeed A. Foad
发明人： Canfeng Lai , Lily L. Pang , Majeed A. Foad
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01J37/3244
摘要： A gas distribution plate is formed of a metallic body having a bottom surface with plural gas disperser orifices and an internal gas manifold feeding the orifices. Each one of an array of discrete RF power applicators held in the plate includes (a) an insulating cylindrical housing extending through the plate, a portion of the housing extending outside of the plate through the bottom surface, and (b) a conductive solenoidal coil contained within the housing, a portion of the coil lying within the portion of the housing that extends outside of the plate through the bottom surface.
摘要翻译：气体分配板由具有多个气体分散器孔的底面的金属体和供给该孔的内部气体歧管形成。保持在板中的分立RF功率施加器阵列中的每一个包括（a）延伸穿过板的绝缘圆柱形壳体，壳体的通过底表面延伸到板外部的部分，以及（b）导电螺线管线圈所述线圈包含在所述壳体内，所述线圈的一部分位于所述壳体的通过所述底表面延伸到所述板外部的部分中。

4. 发明申请

US20080286982A1 PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR 有权
标题翻译：等离子体沉淀离子植入与高分辨率的室温反应器的季铵盐过程
公开(公告)号：US20080286982A1
公开(公告)日：2008-11-20
申请号：US11748783
申请日：2007-05-15
申请人： Shijian Li , Lily L. Pang , Majeed A. Foad , Seon-Mee Cho
发明人： Shijian Li , Lily L. Pang , Majeed A. Foad , Seon-Mee Cho
IPC分类号： H01L21/31
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/3244 , H01J37/32449
摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.
摘要翻译：提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生穿过室的Si O 2 O 3种类的环形等离子体电流，以沉积Si的调味层同时在没有晶片的情况下离开基座，以便露出基座的晶片支撑表面，同时在腔室内的表面上形成一个或多个x O 材料。

5. 发明申请

US20110064545A1 SUBSTRATE TRANSFER MECHANISM WITH PREHEATING FEATURES 审中-公开
标题翻译：具有预热功能的基板传输机构
公开(公告)号：US20110064545A1
公开(公告)日：2011-03-17
申请号：US12882508
申请日：2010-09-15
申请人： TETSUYA ISHIKAWA , Lily L. Pang , Quyen D. Pham , Donald J.K. Olgado
发明人： TETSUYA ISHIKAWA , Lily L. Pang , Quyen D. Pham , Donald J.K. Olgado
IPC分类号： H01L21/677
CPC分类号： H01L21/67196 , H01L21/67103 , H01L21/67742 , H01L21/68707
摘要： Embodiments of the present invention provide apparatus and method for heating one or more substrates during transfer. One embodiment provides a robot blade assembly for supporting a substrate or a substrate carrier thereon. The robot blade assembly comprises a base plate, an induction heating assembly disposed on the base plate, and a top plate disposed above the induction heating assembly. Another embodiment provides an induction heating assembly disposed over a transfer chamber having a substrate transfer mechanism disposed therein.
摘要翻译：本发明的实施例提供了在传送期间加热一个或多个基板的装置和方法。一个实施例提供了一种用于在其上支撑衬底或衬底载体的机器人刀片组件。机器人刀片组件包括基板，设置在基板上的感应加热组件和设置在感应加热组件上方的顶板。另一实施例提供一种设置在传送室上的感应加热组件，其具有设置在其中的衬底传送机构。

6. 发明授权

US06364958B1 Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges 失效
标题翻译：具有多个接地路桥的等离子体辅助半导体衬底处理室
公开(公告)号：US06364958B1
公开(公告)日：2002-04-02
申请号：US09577104
申请日：2000-05-24
申请人： Canfeng Lai , Michael Santiago Cox , Michael Barnes , Lily L. Pang
发明人： Canfeng Lai , Michael Santiago Cox , Michael Barnes , Lily L. Pang
IPC分类号： C23C1600
CPC分类号： H01L21/67069
摘要： A plasma assisted semiconductor substrate processing chamber having a plurality of electrically conductive bridges for preventing electrical arcing in the chamber. More particularly, the chamber has a plurality of electrically conductive bridges that connect a portion of a substrate support member with a portion of the chamber walls.
摘要翻译：一种等离子体辅助半导体衬底处理室，具有用于防止腔室中的电弧的多个导电桥。更具体地，腔室具有将衬底支撑构件的一部分与腔室壁的一部分连接的多个导电桥。

7. 发明授权

US06958098B2 Semiconductor wafer support lift-pin assembly 失效
标题翻译：半导体晶片支撑提升针组件
公开(公告)号：US06958098B2
公开(公告)日：2005-10-25
申请号：US10421501
申请日：2003-04-22
申请人： Rudolf Gujer , Thomas K. Cho , Lily L. Pang , Michael P. Karazim , Tetsuya Ishikawa
发明人： Rudolf Gujer , Thomas K. Cho , Lily L. Pang , Michael P. Karazim , Tetsuya Ishikawa
IPC分类号： C23C16/40 , C23C16/44 , C23C16/458 , H01L21/00 , C23C16/00
CPC分类号： C23C16/405 , C23C16/4401 , C23C16/4409 , C23C16/4412 , C23C16/45561 , C23C16/4586 , Y10T279/11 , Y10T279/23
摘要： A modular lift-pin assembly includes a lift-pin having a distal end, a connector, and an actuator pin. The connector includes an actuator end having a plurality of catch fingers disposed around the actuator end. Each of the plurality of catch fingers includes a lip extending radially inwards. A lift-pin end is coupled to the distal end of the lift-pin, and the actuator pin is coupled to the actuator end of the connector.
摘要翻译：模块化提升销组件包括具有远端的提升销，连接器和致动器销。连接器包括具有设置在致动器端周围的多个卡爪的致动器端。多个捕捉指状物中的每一个包括径向向内延伸的唇缘。提升销端连接到提升销的远端，并且致动器销联接到连接器的致动器端。

8. 发明授权

US06572708B2 Semiconductor wafer support lift-pin assembly 失效
公开(公告)号：US06572708B2
公开(公告)日：2003-06-03
申请号：US09797214
申请日：2001-02-28
申请人： Rudolf Gujer , Thomas K. Cho , Lily L. Pang , Michael P. Karazim , Tetsuya Ishikawa
发明人： Rudolf Gujer , Thomas K. Cho , Lily L. Pang , Michael P. Karazim , Tetsuya Ishikawa
IPC分类号： H01L2168
CPC分类号： C23C16/4409 , C23C16/405 , C23C16/4401 , C23C16/4412 , C23C16/45561 , C23C16/4586
摘要： A modular lift-pin assembly comprises a lift-pin having a distal end and a connector having a lift-pin end and an actuator end. The lift-pin end of the connector is coupled to the distal end of the lift-pin and an actuator pin is then coupled to the actuator end of the connector to actuate the lift-pin through the connector.

9. 发明申请

US20130098455A1 MULTIPLE COMPLEMENTARY GAS DISTRIBUTION ASSEMBLIES 有权
标题翻译：多个补充气体分配组件
公开(公告)号：US20130098455A1
公开(公告)日：2013-04-25
申请号：US13649488
申请日：2012-10-11
申请人： Tuoh-Bin Ng , Yuriy Melnik , Lily L. Pang , Eda Tuncel , Lu Chen , Son T. Nguyen
发明人： Tuoh-Bin Ng , Yuriy Melnik , Lily L. Pang , Eda Tuncel , Lu Chen , Son T. Nguyen
IPC分类号： C23C16/455
CPC分类号： C23C16/303 , C23C16/4488 , C23C16/45574 , C23C16/4558 , Y10T137/0318 , Y10T137/8593
摘要： Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.
摘要翻译：这里描述了具有根据一个实施例的多个气体分配组件的示例性装置。在一个实施例中，该装置包括两个或更多个气体分配组件。每个气体分配组件都具有孔口，至少一个处理气体通过孔口被引入处理室。两个或更多个气体分配组件可被设计成具有互补的特征径向膜生长速率曲线。

10. 发明授权

US07691755B2 Plasma immersion ion implantation with highly uniform chamber seasoning process for a toroidal source reactor 有权
标题翻译：用于环形源反应器的等离子体浸没离子注入与高度均匀的室调节过程
公开(公告)号：US07691755B2
公开(公告)日：2010-04-06
申请号：US11748783
申请日：2007-05-15
申请人： Shijian Li , Lily L. Pang , Majeed A. Foad , Seon-Mee Cho
发明人： Shijian Li , Lily L. Pang , Majeed A. Foad , Seon-Mee Cho
IPC分类号： H01L21/00 , H01L21/26
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/3244 , H01J37/32449
摘要： A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of SixOy species passing through the chamber to deposit a seasoning layer of a SixOy material on surfaces within the chamber, while leaving the pedestal without a wafer so as to expose a wafer support surface of the pedestal.
摘要翻译：提供了一种用于在具有天花板和圆柱形侧壁的反应室的内部以及面向天花板的晶片支撑台架上执行具有高度均匀的调味膜的等离子体浸没离子注入的方法。该方法包括在晶片支撑基座的外围提供具有多个气体注入孔的气体分配环，所述孔从晶片支撑基座径向向外。含硅气体通过环的气体分配孔引入，以建立含硅气体的径向向外流动图案。反应器包括在天花板中的相邻侧壁处的相对侧的导管端口对，以及相应的外部导管，其通常跨越室的直径并且耦合到相应的端口对。该方法还包括将氧气通过导管端口注入到腔室中，以在腔室中建立轴向向下的氧气气流模式。 RF功率耦合到每个导管的内部，以产生通过该室的六十种物质的环形等离子体电流，以在室内的表面上沉积SixOy材料的调味层，同时离开基座而没有晶片，以便露出基座的晶片支撑表面。

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