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    • 72. 发明授权
    • Fuel injection valve
    • 燃油喷射阀
    • US08230839B2
    • 2012-07-31
    • US12438668
    • 2006-09-25
    • Masahiko HayataniMotoyuki AbeToru IshikawaEiichi KubotaTakehiko Kowatari
    • Masahiko HayataniMotoyuki AbeToru IshikawaEiichi KubotaTakehiko Kowatari
    • F02M51/00
    • F02M51/0671F02M51/0685F02M2200/07F02M2200/304
    • In a fuel injection valve used for an internal combustion engine, a valve closing lag time due to fluid resistance in a fuel path is shortened to decrease a minimum injection limit. More specifically, in the fuel injection valve in which an anchor is attracted to an end face part of a stationary core having a fuel path formed at a center part thereof by means of electromagnetic force, and in which a fuel injection hole is opened and closed by controlling a valve disc driven in conjunction with the anchor, there are provided a fuel reservoir part at a center part of an upper end face part of the anchor, a through hole extending axially in a fashion that an end part thereof is open to the fuel reservoir part, and a fuel path extending radially outward from the fuel reservoir part so that fuel is fed to a magnetic attraction gap between an upper end face part of the anchor and a lower end face part of the stationary core. Further, an opening part of a through hole that is open to an upper end face part of the anchor is at least partially opposed to a fuel introduction bore formed in the stationary core, and on the opening part of the through hole, a fuel introduction part is provided for capturing fuel running radially outward from a center side part of the anchor and for guiding the fuel thus captured to the through hole.
    • 在用于内燃机的燃料喷射阀中,由于燃料路径中的流体阻力引起的关闭滞后时间被缩短以减小最小喷射极限。 更具体地说,在燃料喷射阀中,锚具被吸引到具有通过电磁力形成在其中心部分处的燃料路径的固定铁芯的端面部分,并且其中燃料喷射孔被打开和关闭 通过控制与锚固件一起驱动的阀盘,在锚固件的上端面部分的中心部分设置有一个燃料储存部分,一个轴向延伸的通孔,该通孔的端部向 燃料储存部分和从燃料储存部分径向向外延伸的燃料路径,使得燃料被供给到锚固件的上端面部分和固定铁芯的下端面部分之间的磁吸引间隙。 此外,通向孔的上端面部分开口的通孔的开口部分至少部分地与形成在固定铁芯中的燃料导入孔相对,并且在通孔的开口部分上具有燃料引入 设置有用于捕获从锚的中心侧径向向外延伸的燃料并且将如此捕获的燃料引导到通孔。
    • 73. 发明授权
    • DLL circuit and control method therefor
    • DLL电路及其控制方法
    • US08063679B2
    • 2011-11-22
    • US12603910
    • 2009-10-22
    • Hiroki TakahashiToru Ishikawa
    • Hiroki TakahashiToru Ishikawa
    • H03L7/06
    • H03L7/085H03L7/0812
    • Jitter is stably reduced. An input clock signal (CLKi) is outputted as an output clock signal (CLKo) via a voltage controlled delay circuit (12), and in addition a delay amount in the voltage controlled delay circuit (12) is controlled based on a result of a phase comparison of the input clock signal (CLKi) and the output clock signal (CLKo). A phase comparison result judging circuit (15) adds up results of phase comparison of the input clock signal (CLKi) and the output clock signal (CLKo) over a prescribed time, and controls the delay amount based on a distribution of addition results.
    • 抖动稳定减少。 通过电压控制延迟电路(12)将输入时钟信号(CLKi)作为输出时钟信号(CLKo)输出,另外根据电压控制延迟电路(12)的结果控制延迟量 输入时钟信号(CLKi)和输出时钟信号(CLKo)的相位比较。 相位比较结果判断电路(15)在规定时间内将输入时钟信号(CLKi)和输出时钟信号(CLKo)的相位比较结果相加,并根据加法结果的分布来控制延迟量。
    • 74. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING SYSTEM INCLUDING THE SAME, AND CONTROLLER
    • 半导体存储器件,包括其的信息处理系统和控制器
    • US20100302874A1
    • 2010-12-02
    • US12784147
    • 2010-05-20
    • Yasushi TakahashiToru Ishikawa
    • Yasushi TakahashiToru Ishikawa
    • G11C7/10G11C7/00G11C8/00
    • G11C11/4096G11C7/10G11C7/22G11C11/4076G11C11/4093
    • To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased.
    • 分别包括分配给第一和第二存储器电路单元的第一和第二数据输入/输出端子以及共同分配给这些存储器电路单元的地址端子。 当第一芯片选择信号被激活时,与第二存储器电路单元的操作无关地,第一存储器电路单元基于地址信号经由第一数据输入/输出端执行读操作或写操作。 当第二芯片选择信号被激活时,第二存储器电路单元基于地址信号执行经由第二数据输入/输出端子的读取操作或写入操作,而与第一存储器电路单元的操作无关。 利用这种配置,可以防止浪费的数据传送,并且可以提高有效的数据传送速率。
    • 75. 发明授权
    • Semiconductor device having input circuits activated by clocks having different phases
    • 具有由具有不同相位的时钟激活的输入电路的半导体器件
    • US07791383B2
    • 2010-09-07
    • US12213817
    • 2008-06-25
    • Toru IshikawaKunihiko Katou
    • Toru IshikawaKunihiko Katou
    • H03L7/00
    • G11C7/1078G11C7/1087
    • Input circuits connected to an external input terminal PAD via resistor elements are activated in response to the level transition of the clock signals supplied thereto for accepting input signals. In order to input signals applied to the external input terminal PAD clock signals having different phases are supplied to the respective input circuits. The cycle time of each one input circuit can be made longer by sequentially assigning the serial data supplied to the external input terminals in response to the clock signals having different clock signals. Since the input circuits are isolated from each other by means of the resistor elements, the influence of the kick back signal which occurs at first stage of each the input circuit upon the other input circuit can be made very small.
    • 响应于提供给其的时钟信号的电平转变以接受输入信号,激活连接到经由电阻元件的外部输入端PAD的输入电路。 为了输入施加到外部输入端子的信号,将具有不同相位的时钟信号提供给各个输入电路。 通过响应于具有不同时钟信号的时钟信号顺序分配提供给外部输入端的串行数据,可以使每个输入电路的周期时间更长。 由于输入电路通过电阻元件彼此隔离,所以可以使在每个输入电路的第一级发生在另一输入电路上的反冲信号的影响非常小。
    • 76. 发明授权
    • Timing adjustment circuit
    • 定时调整电路
    • US07759998B2
    • 2010-07-20
    • US11698892
    • 2007-01-29
    • Toru Ishikawa
    • Toru Ishikawa
    • H03H11/26
    • H03L7/0814H03K5/133H03K5/135H03K5/26H03K2005/00071H03L7/07H03L7/087H03L7/091
    • Three flip-flops receive a common data signal input through a data terminal based on different timing signals which are obtained from an external timing signal and differ from one another by a specific delay step. A judging circuit judges whether or not the output data of the three flip-flops coincide with one another. If all the output data coincide with one another, the latch timing is maintained, whereas if the output data of the flip-flop latching the data signal at a fastest or latest timing differs from the output data of the flip-flop latching the data signal at the central timing, the judging circuit changes the variable timing to obtain a suitable latch timing.
    • 三个触发器基于从外部定时信号获得的不同的定时信号,通过数据终端接收公共数据信号,并且通过特定的延迟步骤彼此不同。 判断电路判断三个触发器的输出数据是否彼此一致。 如果所有输出数据彼此一致,则保持锁存定时,而如果在最快或最新的定时锁存数据信号的触发器的输出数据不同于触发器的输出数据锁存数据信号 在中央定时,判断电路改变可变定时以获得合适的锁定定时。
    • 77. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07663956B2
    • 2010-02-16
    • US11952633
    • 2007-12-07
    • Toru Ishikawa
    • Toru Ishikawa
    • G11C7/00
    • G11C11/406G11C11/40618
    • A semiconductor memory device performs a refresh operation sequentially for a word line selected based on a row address when receiving a refresh request, and comprises: a memory cell array divided into M banks; a refresh counter for sequentially outputting a count value corresponding to the word line to be refreshed in response to the refresh request; and a row address converter for supplying row addresses different from one anther in at lest two banks among the M banks by converting the count value. In the semiconductor memory device, a predetermined number of selected word lines are refreshed at the same time in the banks in accordance with different patterns from one another, and the maximum value of the total number of the selected word lines refreshed at the same time for all the M banks is controlled to be lower than 2M.
    • 半导体存储器件在接收到刷新请求时,基于行地址选择的字线顺序执行刷新操作,并且包括:划分为M个存储体的存储单元阵列; 刷新计数器,用于响应刷新请求顺序地输出与要刷新的字线对应的计数值; 以及行地址转换器,用于通过转换计数值来提供不同于M组中的至少两个存储体中的一个存储体的行地址的行地址。 在半导体存储器件中,根据彼此不同的图案,在存储体中同时刷新预定数量的所选择的字线,同时刷新所选字线的总数的最大值,用于 所有M银行都被控制在低于2M。
    • 78. 发明授权
    • Data transmission system and data transmission apparatus
    • US07620837B2
    • 2009-11-17
    • US11890438
    • 2007-08-06
    • Toru Ishikawa
    • Toru Ishikawa
    • G06F1/12
    • G06F13/423H04L7/0008
    • A data transmission system including a slave device (30) and a master device (10) is disclosed. Slave device (30) may include a slave side clock signal generator section (32) for generating a slave side clock signal (CLKSOUT), a phase adjusting circuit (40) for controlling a phase of a slave side clock signal (CLKSOUT), output sections (33-1 to 33-m) for outputting transmission data signals (SD1 to SDm) in response to slave side clock signal (CLKSOUT), and a timing reference signal generator section (34) for outputting a timing reference signal (SSPH) in response to slave side clock signal (CLKSOUT). Master device (10) may include a master side clock signal generator section (11) for generating master side clock signal (CLKM), input sections (12-1 to 12-m) for sampling data signals (SD1 to SDm) in response to master side clock signal (CLKM), and a phase compare circuit (19) for generating a phase adjustment instruction signal (SADJOUT) based upon timing reference signal (SSPH) and master side clock signal (CLKM). Phase adjusting circuit (40) may adjust a phase of slave side clock signal (CLKSOUT) in response to phase adjustment instruction signal (SADJOUT). In this way, data setup and/or hold times may be improved.