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    • 2. 发明申请
    • INFORMATION SYSTEM, SEMICONDUCTOR DEVICE AND CONTROL METHOD THEREFOR
    • 信息系统,半导体器件及其控制方法
    • US20100123499A1
    • 2010-05-20
    • US12619396
    • 2009-11-16
    • Hiroki TAKAHASHIToru Ishikawa
    • Hiroki TAKAHASHIToru Ishikawa
    • H03L7/06
    • H03L7/0812G11C7/22G11C7/222H03L7/095
    • An information system with an enhanced effect in reducing jitter with a short period. An input clock signal CLKi is output via a voltage-controlled delay circuit 14 as an output clock signal CLKo, and an amount of delay in the voltage-controlled delay circuit 14 is controlled based on the result of comparison of a phase of the input clock signal CLKi and that of the output clock signal CLKo. A phase correction circuit 21 receives the input clock signal CLKi and the output clock signal CLKo. If, after the DLL circuit has become locked, the input clock signal and the output clock signal are out of phase relative to each other, the phase correction circuit 21 corrects the phase of the input clock signal CLKi based on a phase of the output clock signal CLKo to output a signal to the variable delay circuit 14 (FIG. 1).
    • 一种在短时间内减少抖动的增强效果的信息系统。 输入时钟信号CLKi经由电压控制延迟电路14输出作为输出时钟信号CLKo,并且基于输入时钟的相位比较的结果来控制压控延迟电路14的延迟量 信号CLKi和输出时钟信号CLKo的信号。 相位校正电路21接收输入时钟信号CLKi和输出时钟信号CLKo。 如果在DLL电路被锁定之后,输入时钟信号和输出时钟信号彼此相位不相位,则相位校正电路21基于输出时钟的相位校正输入时钟信号CLKi的相位 信号CLKo将信号输出到可变延迟电路14(图1)。
    • 4. 发明授权
    • DLL circuit and control method therefor
    • DLL电路及其控制方法
    • US08063679B2
    • 2011-11-22
    • US12603910
    • 2009-10-22
    • Hiroki TakahashiToru Ishikawa
    • Hiroki TakahashiToru Ishikawa
    • H03L7/06
    • H03L7/085H03L7/0812
    • Jitter is stably reduced. An input clock signal (CLKi) is outputted as an output clock signal (CLKo) via a voltage controlled delay circuit (12), and in addition a delay amount in the voltage controlled delay circuit (12) is controlled based on a result of a phase comparison of the input clock signal (CLKi) and the output clock signal (CLKo). A phase comparison result judging circuit (15) adds up results of phase comparison of the input clock signal (CLKi) and the output clock signal (CLKo) over a prescribed time, and controls the delay amount based on a distribution of addition results.
    • 抖动稳定减少。 通过电压控制延迟电路(12)将输入时钟信号(CLKi)作为输出时钟信号(CLKo)输出,另外根据电压控制延迟电路(12)的结果控制延迟量 输入时钟信号(CLKi)和输出时钟信号(CLKo)的相位比较。 相位比较结果判断电路(15)在规定时间内将输入时钟信号(CLKi)和输出时钟信号(CLKo)的相位比较结果相加,并根据加法结果的分布来控制延迟量。
    • 6. 发明授权
    • Semiconductor memory device, information processing system including the same, and controller
    • 半导体存储器件,包括其的信息处理系统和控制器
    • US08654557B2
    • 2014-02-18
    • US13593046
    • 2012-08-23
    • Yasushi TakahashiToru Ishikawa
    • Yasushi TakahashiToru Ishikawa
    • G11C5/06
    • G11C11/4096G11C7/10G11C7/22G11C11/4076G11C11/4093
    • A system including a controller and a memory chip. The controller includes first and second selection signal terminals supplying first and second selection signals, respectively, multiple first data terminals and multiple second data terminals. The memory chip includes a semiconductor substrate, third and fourth selection signal terminals provided on the semiconductor substrate and electrically coupled to the first and second selection signal terminals of the controller, respectively. Multiple third data terminals are provided on the semiconductor substrate and electrically coupled to the first data terminals of the controller, respectively. Multiple fourth data terminals are provided on the semiconductor substrate and electrically coupled to the second data terminals of the controller, respectively. The first and third data terminals communicate first data in response to the first selection signal. The second and fourth data terminals communicate second data in response to the second selection signal.
    • 一种包括控制器和存储器芯片的系统。 控制器包括分别提供第一和第二选择信号的第一和第二选择信号端,多个第一数据终端和多个第二数据终端。 存储器芯片包括半导体衬底,设置在半导体衬底上并分别电耦合到控制器的第一和第二选择信号端子的第三和第四选择信号端子。 多个第三数据端子分别设置在半导体衬底上并电连接到控制器的第一数据端。 多个第四数据端子分别设置在半导体衬底上并电连接到控制器的第二数据端。 第一和第三数据终端响应于第一选择信号来传送第一数据。 第二和第四数据终端响应于第二选择信号传送第二数据。
    • 8. 发明申请
    • DEVICE PERFORMING REFRESH OPERATIONS OF MEMORY AREAS
    • 执行存储区刷新操作的设备
    • US20120263003A1
    • 2012-10-18
    • US13444032
    • 2012-04-11
    • Kenichi SAKAKIBARAToru Ishikawa
    • Kenichi SAKAKIBARAToru Ishikawa
    • G11C7/00
    • G11C11/40615G11C11/40618
    • Disclosed herein is a device that includes a plurality of memory circuits and a refresh control circuit configured to generate a plurality of refresh initiation signals such that one of the refresh initiation signals takes an active level. Each of the memory circuits comprises a memory cell array including a plurality of memory cells, at least one data terminal, a data read/write circuit performing a data read operation to read out read-data from a selected one of the memory cells and supply the read-data to the data terminal and a data write operation to receive write-data from the data terminal and write the write-data into a selected one of the memory cells, and a refresh circuit performing a data refresh operation on selected one or ones of the memory cells of the memory cell array in response to an associated one of the refresh initiation signals taking the active level.
    • 本文公开了一种包括多个存储器电路和刷新控制电路的装置,该刷新控制电路被配置为产生多个刷新启动信号,使得刷新启动信号中的一个获得有效电平。 每个存储器电路包括存储单元阵列,该存储单元阵列包括多个存储单元,至少一个数据端,数据读/写电路,执行数据读操作,以从所选存储单元中读出读数据并提供 读取数据到数据终端,以及数据写入操作,以从数据终端接收写入数据,并将写入数据写入所选择的一个存储器单元;以及刷新电路,对选择的一个或 所述存储器单元阵列的存储单元中的一个响应于所述刷新启动信号中的相关联的一个采用有效电平。
    • 9. 发明授权
    • Semiconductor memory device, information processing system including the same, and controller
    • 半导体存储器件,包括其的信息处理系统和控制器
    • US08274844B2
    • 2012-09-25
    • US12784147
    • 2010-05-20
    • Yasushi TakahashiToru Ishikawa
    • Yasushi TakahashiToru Ishikawa
    • G11C7/00
    • G11C11/4096G11C7/10G11C7/22G11C11/4076G11C11/4093
    • To include first and second data input/output terminals allocated to first and second memory circuit units, respectively, and an address terminal allocated in common to these memory circuit units. When a first chip selection signal is activated, the first memory circuit unit performs a read operation or a write operation via the first data input/output terminal based on an address signal regardless of an operation of the second memory circuit unit. When a second chip selection signal is activated, the second memory circuit unit performs a read operation or a write operation via the second data input/output terminal based on the address signal regardless of an operation of the first memory circuit unit. With this configuration, a wasteful data transfer can be prevented, and the effective data transfer rate can be increased.
    • 分别包括分配给第一和第二存储器电路单元的第一和第二数据输入/输出端子以及共同分配给这些存储器电路单元的地址端子。 当第一芯片选择信号被激活时,与第二存储器电路单元的操作无关地,第一存储器电路单元基于地址信号经由第一数据输入/输出端执行读操作或写操作。 当第二芯片选择信号被激活时,第二存储器电路单元基于地址信号执行经由第二数据输入/输出端子的读取操作或写入操作,而与第一存储器电路单元的操作无关。 利用这种配置,可以防止浪费的数据传送,并且可以提高有效的数据传送速率。