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71. 发明申请

US20050145265A1 Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer 有权
标题翻译：使用薄的高速流体层处理晶片表面的方法和装置
公开(公告)号：US20050145265A1
公开(公告)日：2005-07-07
申请号：US10882835
申请日：2004-06-30
申请人： Michael Ravkin , Michael Smith , John de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
发明人： Michael Ravkin , Michael Smith , John de Larios , Fritz Redeker , Mikhail Korolik , Christian DiPietro
IPC分类号： B08B3/00 , B08B3/04 , C25D5/08 , C25D5/22 , C25D7/12 , C25D17/00 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/67051 , C25D5/08 , C25D17/00 , C25D17/001 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , Y10S134/902
摘要： Among the many embodiment, in one embodiment, a method for processing a substrate is disclosed which includes generating a fluid layer on a surface of the substrate, the fluid layer defining a fluid meniscus. The generating includes moving a head in proximity to the surface, applying a fluid from the head to the surface while the head is in proximity to the surface of the substrate to define the fluid layer, and removing the fluid from the surface through the proximity head by a vacuum. The fluid travels along the fluid layer between the head and the substrate at a velocity that increases as the head is in closer proximity to the surface.
摘要翻译：在许多实施例中，在一个实施例中，公开了一种用于处理衬底的方法，其包括在衬底的表面上产生流体层，流体层限定流体弯液面。该产生包括将头部移动到靠近表面的位置，将流体从头部施加到表面，同时头部靠近基底的表面以限定流体层，并且通过邻近头部从表面移除流体通过真空。流体沿着头部和基底之间的流体层以随着头部更接近表面而增加的速度行进。

72. 发明申请

US20100136788A1 THERMAL METHODS FOR CLEANING POST-CMP WAFERS 有权
标题翻译：用于清洁后CMP抛光的热方法
公开(公告)号：US20100136788A1
公开(公告)日：2010-06-03
申请号：US12699518
申请日：2010-02-03
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/306 , H01L21/3205
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

73. 发明授权

US07884017B2 Thermal methods for cleaning post-CMP wafers 有权
标题翻译：用于清洁CMP后晶圆的热处理方法
公开(公告)号：US07884017B2
公开(公告)日：2011-02-08
申请号：US12699518
申请日：2010-02-03
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/44 , H01L21/31 , H01L21/469 , H01L21/24 , H01L21/40
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

74. 发明申请

US20080280456A1 Thermal methods for cleaning post-CMP wafers 有权
标题翻译：用于清洁CMP后晶圆的热处理方法
公开(公告)号：US20080280456A1
公开(公告)日：2008-11-13
申请号：US11801269
申请日：2007-05-08
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagiri , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/00
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

75. 发明授权

US07709400B2 Thermal methods for cleaning post-CMP wafers 有权
标题翻译：用于清洁CMP后晶圆的热处理方法
公开(公告)号：US07709400B2
公开(公告)日：2010-05-04
申请号：US11801269
申请日：2007-05-08
申请人： Zhonghui Alex Wang , Tiruchirapalli Arunagirí , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
发明人： Zhonghui Alex Wang , Tiruchirapalli Arunagirí , Fritz C. Redeker , Yezdi Dordi , John Boyd , Mikhail Korolik , Arthur M. Howald , William Thie , Praveen Nalla
IPC分类号： H01L21/24 , H01L21/40 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02074
摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
摘要翻译：提供了化学机械抛光后的半导体晶片清洗方法。一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。然后，在还原环境中的热处理将氧化铜还原为元素铜。这使得暴露的铜清洁并进行进一步处理，例如化学镀。

76. 发明授权

US07939139B2 Methods for atomic layer deposition (ALD) using a proximity meniscus 有权
标题翻译：使用邻近半月板的原子层沉积（ALD）方法
公开(公告)号：US07939139B2
公开(公告)日：2011-05-10
申请号：US12624369
申请日：2009-11-23
申请人： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
发明人： Mike Ravkin , Mikhail Korolik , Mark Wilcoxson
IPC分类号： B05D1/36 , B05D7/00 , B08B3/00
CPC分类号： C25D5/08 , B82Y40/00 , C25D5/22 , C25D7/12 , C25D17/001 , C25D17/02 , C25D21/10 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： Provided are methods for processing a substrate using a proximity system defined by one or more meniscus windows on one or more proximity heads. One method includes applying a first fluid meniscus to a surface of the substrate to apply a chemical precursor to the surface of the substrate. The first fluid meniscus is applied to first proximity meniscus window. Then, applying a second fluid meniscus to the surface of the substrate to leave an atomic layer of the chemical precursor on the surface of the substrate, through a second proximity meniscus window. A third fluid meniscus is applied to the surface of the substrate to apply a chemical reactant configured to react with the atomic layer of the chemical precursor to generate a layer of a material, through a third proximity meniscus window. The first, second and third proximity meniscus windows are arranged to apply the first fluid meniscus, the second fluid meniscus and the third fluid meniscus one after the other to a same location of the surface of the substrate during movement of the substrate through the proximity system.
摘要翻译：提供了使用由一个或多个邻近头上的一个或多个弯液面窗口限定的接近系统来处理衬底的方法。一种方法包括将第一流体弯月面施加到衬底的表面以将化学前体施加到衬底的表面。第一流体弯液面被应用于第一接近弯月面窗口。然后，将第二流体弯月面施加到衬底的表面，以通过第二接近弯月面窗口在衬底的表面上留下化学前体的原子层。将第三流体弯液面施加到基底的表面，以施加配置成与化学前体的原子层反应以产生材料层的化学反应物，通过第三接近弯月面窗口。第一，第二和第三接近弯液面窗口被布置成在衬底通过邻近系统移动期间将第一流体弯月面，第二流体弯月面和第三流体弯月面一个接一个地施加到衬底的表面的相同位置。

77. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

78. 发明授权

US08128278B2 Methods and apparatus for thin metal film thickness measurement 有权
标题翻译：薄金属薄膜厚度测量方法和设备
公开(公告)号：US08128278B2
公开(公告)日：2012-03-06
申请号：US12508838
申请日：2009-07-24
申请人： Yehiel Gotkis , Mikhail Korolik
发明人： Yehiel Gotkis , Mikhail Korolik
IPC分类号： G01N25/00 , G01N17/00 , G01K3/00
CPC分类号： G01B21/085
摘要： A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
摘要翻译：提供了一种用于测量金属膜厚度的方法。该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。然后，测量金属膜的温度。接下来，基于温度和限定的热能量计算金属膜的厚度。还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。

79. 发明申请

US20110143553A1 INTEGRATED TOOL SETS AND PROCESS TO KEEP SUBSTRATE SURFACE WET DURING PLATING AND CLEAN IN FABRICATION OF ADVANCED NANO-ELECTRONIC DEVICES 审中-公开
标题翻译：综合工具集和工艺在高级纳米电子设备制造过程中保护基底表面湿润清洗和清洁
公开(公告)号：US20110143553A1
公开(公告)日：2011-06-16
申请号：US12965765
申请日：2010-12-10
申请人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
发明人： Yaxin Wang , Shijian Li , Fritz Redeker , John Parks , Artur Kolics , Hyungsuk Alexander Yoon , Tarek Suwwan de Felipe , Mikhail Korolik
IPC分类号： H01L21/469 , B05C3/02 , B05C11/00 , B05C11/02
CPC分类号： H01L21/288 , C23C18/1642 , C23C18/1689 , C23C18/1872 , H01L21/76849
摘要： Methods and systems for handling a substrate through processes including an integrated electroless deposition process includes processing a surface of the substrate in an electroless deposition module to deposit a layer over conductive features of the substrate using a deposition fluid. The surface of the substrate is then rinsed in the electroless deposition module with a rinsing fluid. The rinsing is controlled to prevent de-wetting of the surface so that a transfer film defined from the rinsing fluid remains coated over the surface of the substrate. The substrate is removed from the electroless deposition module while maintaining the transfer film over the surface of the substrate. The transfer film over the surface of the substrate prevents drying of the surface of the substrate so that the removing is wet. The substrate, once removed from the electroless deposition module, is moved into a post-deposition module while maintaining the transfer film over the surface of the substrate.
摘要翻译：用于通过包括集成无电沉积工艺的工艺处理衬底的方法和系统包括在无电沉积模块中处理衬底的表面以使用沉积流体在衬底的导电特征上沉积层。然后用清洗液在无电沉积模块中冲洗基材的表面。控制冲洗以防止表面的脱湿，使得从冲洗流体限定的转印膜保持涂覆在基材的表面上。将基底从无电沉积模块移除，同时将转印膜保持在衬底的表面上。衬底表面上的转印膜防止了衬底表面的干燥，使得去除被弄湿。一旦从无电镀沉积模块中取出的衬底被移动到后沉积模块中，同时将转印膜保持在衬底的表面上。

80. 发明授权

US07204639B1 Method and apparatus for thin metal film thickness measurement 有权
标题翻译：薄金属薄膜厚度测量方法和设备
公开(公告)号：US07204639B1
公开(公告)日：2007-04-17
申请号：US10672019
申请日：2003-09-26
申请人： Yehiel Gotkis , Mikhail Korolik
发明人： Yehiel Gotkis , Mikhail Korolik
IPC分类号： G01N25/00 , G01J5/00
CPC分类号： G01B21/085
摘要： A method for measuring a metal film thickness is provided. The method initiates with heating a region of interest of a metal film with a defined amount of heat energy. Then, a temperature of the metal film is measured. Next, a thickness of the metal film is calculated based upon the temperature and the defined amount of heat energy. A chemical mechanical planarization system capable of detecting a thin metal film through the detection of heat transfer dynamics is also provided.
摘要翻译：提供了一种用于测量金属膜厚度的方法。该方法通过以限定量的热能加热金属膜的感兴趣区域来开始。然后，测量金属膜的温度。接下来，基于温度和限定的热能量计算金属膜的厚度。还提供了能够通过检测传热动力学来检测薄金属膜的化学机械平面化系统。

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